• 제목/요약/키워드: BARRIER METAL

검색결과 416건 처리시간 0.029초

The Structural Features and Rotational Barriers in Indenyl Allyl Metal Complexes

  • Sungkwon Kang
    • Bulletin of the Korean Chemical Society
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    • 제10권6호
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    • pp.554-559
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    • 1989
  • The electronic structure, conformational preferences, and rotational barriers have been studied for transition metal indenyl allyl complexes by means of extended Huckel calculations. After geometrical optimization the exo conformation of allyl moiety is favored over the endo. The rotational barrier of indenyl ring in (Indenyl)Mo(CO)_2(Allyl)$ is computed to be 3.8 kcal/mol. Population analysis is applied to account for the conformational preferences and rotational barriers. A series of substituted allyl complexes has been also optimized. It shows steric hindrance plays a crucial role in setting the allyl orientation.

Investigation of TaNx diffusion barrier properties using Plasma-Enhanced ALD for copper interconnection

  • 한동석;문대용;권태석;김웅선;황창묵;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.178-178
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    • 2010
  • With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

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Bi-directional Two Terminal Switching Device with Metal/P/N+or Metal/N/P+ Junction

  • Kil, Gyu-Hyun;Lee, Sung-Hyun;Yang, Hyung-Jun;Lee, Jung-Min;Song, Yun-Heub
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.386-386
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    • 2012
  • We studied a bilateral switching device for spin transfer torque (STT-MRAM) based on 3D device simulation. Metal/P/N+or Metal/N/P+ junction device with $30{\times}30nm2$ area which is composed of one side schottky junction at Metal/P/N+ and Metal/N/P+ provides sufficient bidirectional current flow to write data by a drain induced barrier lowering (DIBL). In this work, Junction device confirmed that write current is more than 30 uA at 2 V, It is also has high on-off ratio over 105 under read operation. Junction device has good process feasibility because metal material of junction device could have been replaced by bottom layer of MTJ. Therefore, additional process to fabricate two outer terminals is not need. so, it provides simple fabrication procedures. it is expected that Metal/P/N+ or Metal/N/P+ structure with one side schottky junction will be a promising switch device for beyond 30 nm STT-MRAM.

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양면 인쇄법을 이용한 중금속 검출용 3D 종이 기반 분석장치 제작 (Fabrication of 3D Paper-based Analytical Device Using Double-Sided Imprinting Method for Metal Ion Detection)

  • 최진솔;정헌호
    • 청정기술
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    • 제28권4호
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    • pp.323-330
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    • 2022
  • 미세유체 종이-기반 분석 장치는 최근 현장 진단 및 환경 물질 감지를 포함한 다양한 적용가능성으로 주목을 받고 있다. 본 연구는 적은 비용과 간단한 검출 방법으로 중금속을 빠르게 검출할 수 있는 3D-μPAD를 제작하기 위해 PDMS 양면 인쇄 방법을 제안하였다. 3D-μPAD 디자인은 레이저 커팅으로 아크릴 스탬프에 적용할 수 있으며, 제작된 스탬프에 PDMS 고분자를 스핀 코팅 후 양면접촉인쇄 방식 도입을 통해 3차원 형태의 소수성 장벽 형성에 필요한 조건을 확인하였다. 구체적으로 소수성 장벽 형성 조건인 고분자 농도, 스핀 코팅 속도 및 접촉 시간에 따라 PDMS 소수성 장벽 면적과 친수성 채널의 면적 변화를 분석함으로써 3D-μPAD 제작 공정 조건 최적화를 수행하였다. 최적화된 μPAD로 니켈, 구리, 수은 이온, pH를 다양한 농도에서 검출하였고 이를 ImageJ 프로그램으로 분석하여 grayscale 값으로 정량화 하였다. 이를 통해 3D-μPAD를 제작함으로써 특별한 분석 기기 없이 다양한 중금속 비색 검출을 수행함으로써 조기진단 바이오 센서로의 응용 가능성을 증명하였다. 이 3D-μPAD는 휴대가 간편한 다중 금속이온 검출 바이오센서로서, 신속한 현장 모니터링이 가능하므로 개발도상국 같은 자원이 제한된 지역에서 유용하게 사용 가능하다.

Lower Hole-injection barrier between pentacene and HDT-modified Gold with lowered workfunction

  • Hong, Ki-Pyo;Lee, Jong-Won;Yang, Sang-Yoon;Shin, Kwon-Woo;Jeon, Ha-Young;Kim, Se-Hyun;Park, Chan-Eon
    • 한국고분자학회:학술대회논문집
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    • 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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    • pp.238-238
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    • 2006
  • Through ultra-violet photoemission spectroscopy in-situ experiment, 0.67 eV energy barrier between 1-hexadecanethiol (HDT)-modified gold and pentacene was observed, which was 0.03 eV smaller than the energy barrier between bare gold and pentacene despite HDT modified gold had 0.8 eV lower work function than that of bare gold. This result is opposed to the idea that increasing the work function a metal decreases the energy barrier. This can be explained by two factors. One is the absence of interface dipole, which is observed in pentacene deposited on gold. The other is reduced ionization energy which can be explained through polarization energy or electronic splitting of molecular orbital with more crystalline structure observed through X-ray diffraction patterns.

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Study on Reactive Non-thermal Plasma Process combined with Metal Oxide Catalyst for Removal of Dilute Trichloroethylene

  • Han Sang-Bo;Oda Tetsuji;Park Jae-Youn;Park Sang-Hyun;Koh Hee-Seok
    • 한국전기전자재료학회논문지
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    • 제19권3호
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    • pp.292-300
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    • 2006
  • In order to improve energy efficiency in the dilute trichloroethylene removal using the nonthermal plasma process, the barrier discharge treatment combined with manganese dioxide was experimentally studied. Reaction kinetics in this process was studied on the basis of final byproducts distribution. Decomposition efficiency was improved to about $99\;\%$ at the specific energy of 40 J/L with passing through manganese dioxide. C=C ${\pi}$ bond cleavage of TCE substances gave DCAC, which has the single bond of C-C through oxidation reaction during the barrier discharge plasma treatment. Those DCAC were broken easily in the subsequent catalytic reaction due to the weak bonding energy about $3{\sim}4\;eV$ compared with the double bonding energy in TCE molecules. Oxidation byproducts of DCAC and TCAA from TCE decomposition are generated from the barrier discharge plasma treatment and catalytic surface chemical reaction, respectively. Complete oxidation of TCE into COx is required to about 400 J/L, but $CO_2$ selectivity remains about $60\;\%$.

Approaches to Reduce the Contact Resistance by the Formation of Covalent Contacts in Graphene Thin Film Transistors

  • Na, Youngeun;Han, Jaehyun;Yeo, Jong-Souk
    • Applied Science and Convergence Technology
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    • 제26권4호
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    • pp.55-61
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    • 2017
  • Graphene, with a carrier mobility achieving up to $140,000cm^2/Vs$ at room temperature, makes it an ideal material for application in semiconductor devices. However, when the metal comes in contact with the graphene sheet, an energy barrier forms at the metal-graphene interface, resulting in a drastic reduction of the carrier mobility of graphene. In this review, the various methods of forming metal-graphene covalent contacts to lower the contact resistance are discussed. Furthermore, the graphene sheet in the area of metal contact can be cut in certain patterns, also discussed in this review, which provides a more efficient approach to forming covalent contacts, ultimately reducing the contact resistance for the realization of high-performance graphene devices.

촉진수송 및 태양전지용 분리막 (Polymer Electrolytes and their Application to Solar Cells and Separation Membranes)

  • 강용수
    • 한국막학회:학술대회논문집
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    • 한국막학회 2004년도 첨단 분리막 연구동향
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    • pp.13-35
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    • 2004
  • Metal Complexes in Macromolecules Applications of Polymer Electrolyte Membranes Facilitated Transport in Solid State Roles of Electrolytes in Solar Cells - Electrolytes :ㆍI- and $I_3$-conductor ㆍelectron barrier or hole conductor ㆍelectrochemical redox reaction media ㆍinterfacial contactor for dye, $TiO_2$ and electrode ㆍmechanical separator (omitted)

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