• Proceedings of the Optical Society of Korea Conference
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• 2007.02a
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• pp.215-216
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• 2007

Isolator가 삽입된 Erbium 첨가 광섬유광원을 제작하였고 그 특성을 측정하였다. Isolator 삽입 유무에 따른 광섬유광원의 전 온도구간($-32^{\sim}75^{\circ}C$)에서의 중심파장 안정도는 수 ppm으로 큰 차이를 보이지 않았고, 귀환광 변화($-22^{\sim}-20dB$)에 따른 중심파장 안정도에서는 isolator 삽입이후에 1.6ppm으로 귀환광 변화에 매우 둔감한 결과를 얻었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.97-101
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• 1992

Cordierite glass ceramic has become an electronic substrate material for electronic circuits and the use of whiskers for improving strength and toughness is evident. Green sheets of mixtures containing 15% silicon nitride were sintered to greater than 99 % density. The microstructure was analysed using optical microscopy, scanning electron microscopy (SEM), and X-ray diffraction (XRD). The toughness and hardness were improved with increasing the whisker vol. % and sintering temperature. Especially, it is assumed that toughening increasing at the more high sintering temperature relevants to the glass phase increasing, as showned in the roughness of the fracture surfaces. It was directionally dependent of whisker direction during processing.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.495-496
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• 2006

Electrostatically actuated nanoscale tweezers are fabricated on micro processed electrodes using FIB-CVD. Heavily doped electrode works as interconnection platform for controlling nanoscale devices. Short bent pillars are deposited to control the gap distance of main tweezers fabricated on bent ones. Two types of tweezers which have different gap distances are fabricated and tweezing motion was successfully demonstrated. The threshold voltages at snap-down of the pillars are dependent on the initial gap distance of the unactuated pillars, and the measured values were 93V for 3.6um and 30V for 2.2um. The dimension of nano tweezers and initial gap distances are controllable as demonstrated and we expect more complicated 3-dimensional shapes are also possible.

• Bulletin of the Korean Chemical Society
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• v.29 no.4
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• pp.827-832
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• 2008

A new diarylethene compound with donor and acceptor substituent was synthesized from 2,3-bis(2-methylbenzo[b]thiophene-3-yl)hexafluorocyclopentene (BTF) over 5 steps. The donor-acceptor structured BTF compound (TBTFE) showed spectral change to a longer wavelength through photochromism with a high cyclization quantum yield (0.56). The 3,4-ethylenedioxythiophene (T) and carboethoxy (E) groups directly connected to BTF unit promoted electrical change accompanied with the photoisomerization of the BTF unit. Photo-induced electrical switching was achieved from a photocell containing TBTFE doped polymer film, which showed reversible and stable current change over repeated cycles by the alternative UV/Vis irradiation, as estimated by the I-V plot.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.181-185
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• 2007

We report on our material and process research on ZnO:Al films and on our investigations on wet chemical etching using a variety of etching solutions. We achieve resistivity as low as $750{\mu}{\Omega}cm$ for ZnO:Al films with film thickness of 140 nm. Etching with phosphorous acid allows for accurate fine patterning of the ZnO:Al films on glass substrates.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.1
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• pp.56-62
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• 1992

The GaAs bulk crystals are grown by the Synthesis Solute Diffusion(SSD) method and its properties are investigated. The crystal growth rate at optimum condition is 0.28 cm/day and their temperature dependence is R(T) = 2.92 x 10S04T exp(-1.548eV/kS1BTT) [cmS02T/day.K]. Etch pits density distribution along radial direction is order of 10S04TcmS0-2T and 10S03TcmS0-2T at the edge and middle of the wafers, respectively, and it increased exponentially along vertical direction of ingot. Moreover,it is uniformly distributed as order of 10S03TcmS0-2T in radial direction of In doped GaAs. The carrier concentration and mobilities are measured to 0.34-2.1 x 10S016T cmS0-3T and 2.3-3.3x10S03T cmS02T/V.sec, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.121-124
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• 1998

Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.

• Journal of Magnetics
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• v.14 no.3
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• pp.114-116
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• 2009

The electronic properties of Cu or Pd-doped GaN at several concentrations are examined using the full-potential linear muffin-tin orbital method. For ($Cu_{0.055}Ga_{0.945}$)N, the model reveals a magnetic moment of $1.47{\mu}B$ per supercell. The range of concentrations that are spin-polarized should be restricted within narrow limits. A paramagnetic to ferromagnetic phase transition is found to occur at a Cu concentration of 5.55%.

• ETRI Journal
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• v.29 no.5
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• pp.679-681
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• 2007

In this letter, we demonstrate a technique for suppression of transients in output bursts of an erbium-doped fiber amplifier (EDFA) in an optical burst network. To suppress the transients, the EDFA is forward-fed by non-fluctuating input utilizing a power-modulated burst control packet channel. Using the technique, we obtained a maximum 1.7 dB reduction in gain transient in the EDFA output, and we transmitted 9.953 Gbps data bursts and 2.488 Gbps burst control packets stably.

• Applied Science and Convergence Technology
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• v.23 no.1
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• pp.1-13
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• 2014

Semiconductor quantum structures are often characterized by their energy gaps which are modified by the quantum size effect. Energy levels in semiconductors can be realized by optical transitions within confined structures. Photoluminescence spectroscopy in magnetic fields at low temperatures has proved to be a powerful technique for investigating the electronic states of quantum semiconductor heterostructures and offers a complimentary tool to electrical transport studies. In this review, we examine comprehensive investigations of magneto-excitonic and Landau transitions in a large variety of undoped and doped quantum-well structures. Strong magnetic fields change the diamagnetic energy shift of free excitons from quadratic to linear in B in undoped single quantum well samples. Two-dimensional electron gas induced by modulation doping shows pronounce quantum oscillations in integer quantum Hall regime and discontinuous transition at ${\nu}=1$. Such discontinuous transition can be explained as the formation of spin waves or Skyrmions.