• Journal of the Korean Applied Science and Technology
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• v.31 no.4
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• pp.731-739
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• 2014

Aluminum and boron co-doped zinc-oxide(AZOB) powders as transparent conducting oxide(TCO) were prepared by spray pyrolysis at $900^{\circ}C$. The micron-sized AZOB particles were prepared by spray pyrolysis from aqueous precursor solutions for aluminium, boron, and zinc. The micron-sized AZOB particle after the spray pyrloysis underwent post-heat treatment at $700^{\circ}C$ for 2 hours and it was changed fully to nano-sized AZOB particle by ball milling for 24 hours. The size of primary AZOB particle by Debye-Scherrer Equation and surface resistance of AZOB pellet were measured.

• Progress in Superconductivity
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• v.9 no.1
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• pp.68-73
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• 2007

We fabricated the in-situ $MgB_2$ wires using the powder-in-tube method and investigated the effects of sintering temperature and SiC contents on the microstructure and superconducting properties. Pure $MgB_2$ wires and 5, 10, 20 wt.% SiC doped $MgB_2$ wires were sintered at $600-1000^{\circ}C$ for 30 minutes in Ar atmosphere. We found that $MgB_2$ phase was mostly formed at the sintering temperature of $700^{\circ}C$ and above, and the critical temperature ($T_c$) increased with increasing sintering temperature. For the $MgB_2$ sintered at $850^{\circ}C$, the highest critical current density ($J_c$) was obtained to be $3.7{\times}10^5\;A/cm^2$ at 5 K and 1.6 T by a magnetic properties measurement system (MPMS). The addition of SiC to the $MgB_2$ wires changed microstructure and critical properties. SEM observation showed that the $MgB_2$ core had considerable micro-cracks in undoped wire and the density of micro-cracks decreased with increasing SiC contents. The critical temperature decreased as the SiC contents increased, on the other hand, the critical current density of SiC doped $MgB_2$ wires in high magnetic field was enhanced compared to that of undoped $MgB_2$ wires.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.935-942
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• 2002

Gallium-doped ZnO (GZO) films were deposited on soda-lime glass substrate without heating using Ne, Ar, or Kr gas. Electrical properties of GZO films deposited at various total gas pressures were investigated for the film positions corresponding to the erosion region (region B) and outside the erosion region (region A) of the target. Region B showed high resistivity, which was attributed to the decrease in carrier density and Hall mobility, compared to region A. GZO films deposited using Ne gas showed the degradation in resistivity and crystallinity, whereas, GZO films deposited using Kr gas showed the improvement in resistivity and crystallinity. This degradation in film properties could be attributed to the film damage caused by the bombardment of high-energy particles. Especially, the energies of recoiled neutral atoms ($Ne^0,\;Ar^0,\;Kr^0$) calculated by Monte Carlo simulation corresponded to experimental results.

• Korean Journal of Optics and Photonics
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• v.32 no.3
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• pp.120-125
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• 2021

We have developed a linearly polarized high-power Yb-doped fiber laser in the master oscillator power amplifier (MOPA) scheme for efficient spectral beam combining. We modulated the phase of the seed laser by pseudo-random binary sequence (PRBS), with the bit length optimized to suppress stimulated Brillouin scattering (SBS), and subsequently amplified seed power in a 3-stage amplifier system. We have constructed by coiling the polarization-maintaining (PM) Yb-doped fiber, with core and cladding diameters of 20 ㎛ and 400 ㎛ respectively, to a diameter of 9-12 cm for suppression of the mode instability (MI). Finally, we obtained an output power of 1.004 kW with a slope efficiency of 83.7% in the main amplification stage. The beam quality factor M² and the polarization extinction ratio (PER) were measured to be 1.12 and 21.5 dB respectively. Furthermore, the peak-intensity difference between the Rayleigh signal and SBS signal was observed to be 2.36 dB in the backward spectra, indicating that SBS is successfully suppressed. In addition, it can be expected that the MI does not occur because not only there is no decrease in slope efficiency, but also the beam quality for each amplified output is maintained.

• Journal of the Korean Vacuum Society
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• v.4 no.1
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• pp.85-90
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• 1995

본 연구에서는 투명 전극으로의 응용을 목적으로 PECVD법에 의해 증착된 B이 첨가된 ZnO 박막의 전기 및 광학적 특성을 살펴보았다. B을 첨가하지 않은 ZnO 박막은 비저항이 수 $\Omega$-cm 정도의 값을 가지고 있었으며 시간에 따른 비저항의 변화가 컸으나, 2% B2H6을 5-16sccm의 유량범위에서 첨가한 경우에는 5-9X10-2 $\Omega$-cm의 비저항을 가지고 시간 경과에 따른 비저항의 변화가 아주 작은 ZnO 박막을 얻을 수 있었다. Van der Pauw법에 의한 Hall 계수의 측정 결과에 의하면, B을 첨가하지 않은 ZnO 박막의 전자 농도는 1017/㎤정도였으나 B을 첨가함으로써 최고 1020/㎤까지 증가하였다. 그러나 B이 첨가되기 전에는 박막의 전하 나르게 이동도가 $4extrm{cm}^2$/V.sec 이었으나, B참가에 의해 $0.7\textrm{cm}^2$/V.sec 이하로 감소하였다. B을 첨가한 경우와 첨가하지 않은 경우의 ZnO 박막은 모두 가시광성영역에서 90%이상의 광투과율을 가지고 있었으며, B을 첨가한 경우는 전자농도가 증가함에 따라 광학적 밴드 갭이 3.3eV로부터 3.55eV로 증가하는 거동을 보였다.

• Korean Journal of Optics and Photonics
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• v.9 no.6
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• pp.413-416
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• 1998

We have flattened the gain of EDFA by using a long-period FBG filter and AOTF's. The gain and optical SNR characteristics of the gain-flattened EDFA in long-haul transmission been evaluated in a recirculating EDFA loop. The gain variation was less than 4.6 dB and the optical SNR was higher than 14 dB over 20-nm wavelength range when the optical signal went through the EDFA as many as 200 times. These results indicate that this gain-flattened EDFA is applicable for ultra long-haul WDM optical transmissions over 8000 km.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.204-207
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• 2000

In this paper, we have studied the effect of doped with B-Bi-Zn on properties (microstructure, density, shrinkage, permeability as a function of frequency, etc.) of hexagonal-ferrite for high frequency chip-inductor material about several GHz. The permeability were analyzed by impedance analyzer(100 kHz~40 MHz) and network analyzer(30 MHz~3 GHZ). As a result of the characteristics, the B-Bi-Zn glass ceramic was used to lower the sintering temperature for additive as a function of frequency from 100 kHz to 1.8 GHz showed constant tends. The maximum imaginary value of complex permeability was observed near the resonance frequency of 2 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.2
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• pp.293-298
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• 2001

EB-NMP free standing film is manufactured from NMP solution of polyaniline(emeraldine base EB). Also ES(emeraldine salt EB . HCl) film is manufactured by doping of EB-NMP film with 1 mole HCI aqueous solution. And EB-mixture films containing conductor(carbon black, graphite, Ag etc.) are prepared, In this study, electromagnetic interference shielding efficiency(EMI SE) of ES free standing film ($\sigma$=5 S/cm, t=0.14mm) is 23~25 dB in the frequency range of 10 MHz~1 GHz. ES-mixture(carbon black, graphite, Ag etc.) films, polyaniline film doped camphorsulfonic acid(CSA) show higher EMI SE(30~34 dB, 36~42 dB, 44~52 dB, 34~43 dB) property than that of ES free standing film, respectively.

• Korean Journal of Optics and Photonics
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• v.13 no.5
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• pp.414-420
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• 2002

We realized optical logic gates using a bacteriorhodopsin (bR) doped polymer film. The bR undergoes a complex photocycle characterized by several spectroscopically distinct intermediate states. We realized optical logic gates using a He-Ne laser (632.8 nm) and a He-Cd laser (413 nm) that consider B-state and absorption change of M-state in the photocycle of bR. Also, we realized high speed AND logic gate using He-Ne laser (632.8 nm) and the second harmonics at 532 nm from a pulsed Nd-YAG laser that considering absorption spectrum between B-state and K-state.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.9
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• pp.931-935
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• 2012

In this study, we fabricate and investigate low-temperature solid oxide fuel cells with a ceramic substrate/porous metal/ceramic/porous metal structure. To realize low-temperature operation in solid oxide fuel cells, the membrane should be fabricated to have a thickness of the order of a few hundreds nanometers to minimize IR loss. Yttrium-doped barium zirconate (BYZ), a proton conductor, was used as the electrolyte. We deposited a 350-nm-thick Pt (anode) layer on a porous substrate by sputter deposition. We also deposited a 1-${\mu}m$-thick BYZ layer on the Pt anode using pulsed laser deposition (PLD). Finally, we deposited a 200-nm-thick Pt (cathode) layer on the BYZ electrolyte by sputter deposition. The open circuit voltage (OCV) is 0.806 V, and the maximum power density is 11.9 mW/$cm^2$ at $350^{\circ}C$. Even though a fully dense electrolyte is deposited via PLD, a cross-sectional transmission electron microscopy (TEM) image reveals many voids and defects.