• 한국세라믹학회지
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• 제52권1호
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• pp.72-76
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• 2015

150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick $SiO_2$ buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/$SiO_2$/PET films were analyzed with respect to the thickness of the $SiO_2$ buffer layer. The mechanical properties were outstanding at a $SiO_2$ thickness of 50 nm, with a resistivity of $1.45{\times}10^{-3}{\Omega}-cm$, carrier concentration of $8.84{\times}10^{20}/cm^3$, hall mobility of $4.88cm^2/Vs$, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the $SiO_2$ thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.243-246
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• 2004

Boron Phosphide films were deposited on (111) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with PH, using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 ml/min for B2H6, 60 ml/min for PH3 and 1 l/min for N2. After as grown the films were insitu annealed fur 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is $10.108{\AA}$ for the reaction temperature at $450^{\circ}C$ and $29.626{\AA}$ fur the reaction temperature at $650^{\circ}C$. The measurement of XRD shows that the films have the orientation of(1 0 1). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry. For the Result of microwaves absorbtion properties using VNA, it obtained the permittivity of BP about 8 between $1.5{\sim}2.5GHz$. In this study, it obtained the BP thin film by deposited in atmosphere pressure And BP thin film can be after to applicate as microwave absolution material is obtained.

• 한국생산제조학회지
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• 제5권1호
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• pp.51-57
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• 1996

Although the system for establishing grinding operation standards mainly depends on the simulation method, it is desirable to obtain highly reliable grinding data and to develop experimental technology, And, it also needs to modify the simulation models if the simulation results do not coincide with special situation due to the difference of grinding machine, wheels and workpiece materials. If simple tests are carried out to evaluate these specificity, the reliability and utility of the system can be raised higher. Therefore, it is required for evaluating wheel ability and confirming the validity of the experimental methods as well as the possibility of exchanging the experimental data between Korea and Japan to preform several kinds of grinding experiments. In this paper, experiments of cylindrical plunge grinding were conducted using the wheels of the same specification made by three typical grinding wheel manufacturers both in Korea and Japan, respectively. The grinding power consumption grinding force, the ground surface roughness, and wheel wear were measured under the same dressing the grinding conditions. The average value and standard deviation of the experiment results were calculated to compared the grinding performance of the wheels made in both countries. The experiment results show that the grinding wheel performance of Korea's is nearly equal to that of Japan's for general purpose of grinding operation. In conclusion, it is possible to exchange the experimental data between Korea and japan.

• 전자공학회논문지D
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• 제35D권7호
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• pp.72-78
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• 1998

This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1988-1990
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• 1996

In this work, we have grown or evaporated thermal oxide and E-beam oxide on the (100) oriented n-type silicon wafers, respectively and they were directly bonded with another silicon wafer after hydrophilization using solutions of three types of $HNO_3$, $H_{2}SO_{4}$ and $NH_{4}OH$. Changes of average surface roughness after hydrophilizations of the single crystalline silicon wafer, thermal oxide and E-beam evaporated silicon oxide were studied using atomic force microscope. Bonding interfaces of the bonded pairs were inspected using scanning electron microscope. Void and non-contact area of the bonded pairs were also inspected using infrared transmission microscope.

• 반도체디스플레이기술학회지
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• 제11권1호
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• pp.29-33
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• 2012

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under hydrogen ambient gases (Ar, $Ar+H^2$) at room temperature. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $H^2$ under $Ar+H^2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show good current density-voltage-luminance characteristics. This suggests that flat surface roughness and low electrical resistivity of a-IZO anode film lead to more efficient anode material in OLED devices.

• 한국분말재료학회지
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• 제10권3호
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• pp.195-200
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• 2003

Ni coated $Al_2O_3$ composite was successfully Prepared by the electroless deposition Process. The average size of Ni particles coated on the $Al_2O_3$ matrix powder was about 20 nm. It was hard to find any reaction compound as an impurity at interface between $Al_2O_3$ and Ni particles after sintering. The characterization of microstructure crystal structure and fracture behavior of the sintered body were investigated using XRD, TEM and Victors hardness tester, and compared with those of the sintered $Al_2O_3$ monolithic body. Many dislocations were observed in the Ni phase due to the difference of thermal expansion coefficient between $Al_2O_3$ and Ni phase, and no observed microcracks at their $Al_2O_3$ and Ni interface. In the $Al_2O_3$/Ni composite, the main fracture mode showed a mixed fracture with intergranular and transgranuluar type having some ,surface roughness. The fracture toughness was slightly increased due to the plastic deformation mechanism of Ni phase in the $Al_2O_3$/Ni composite.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1996년도 춘계학술대회 논문집
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• pp.188-193
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• 1996

This study was performed the blankholding force and vee-ring effects on Blanking characteristics, such as maximum blanking force, burnish, dish-shape, hardness. etc, in fine-blanking die by the experimental method. Two types of aluminum (Al. 1050-0, Al 5052-H) Such as annealed and unannealed materials were used for the experiment. In order to get a hydrostatic pressure effect, the clearance was set to 0.5% of the thickness of strip, and the counter punch and stripper plate with Vee-ring was set-up. While this experiment was carrying out, the average blanking Velocity was constant (37.5mm/sec) As a result of this study, we got a good surface roughness and a glassy shear plane(burnish) of the sheet over 90% thickness, and such as the excellent accuracy of dimensions, the good squareness and the reduction of dish-shape could be obtained, and also the additional results obtained were such that the hardness of shear plane was increased and the maximum blanking force was reduced in the condition of Vee-ring height of 1.0~1.5mm, and blankholding force of 1200kg.

• 대한기계학회논문집A
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• 제21권6호
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• pp.918-924
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• 1997

A method for measuring the accuracy of rotating objects was studied. Rotating axis errors are significant; such as the spindle error of a manufacturing machine which results in the surface roughness of machined work pieces. Three capacitance type displacement sensors were used to measure the rotating master ball position. The sensors were mounted to the three orthogonal points on the spindle axis. The measurement data were analyzed and shown for rotating spindle accuracy, not only for average roundness error but also for spindle volumetric positional error during the revolutions. This method is simple and economical for industrial field use with regular inspection of rotating machines using portable equipment. Measuring and analyzing time using this method takes only a couple of hours. This method can also measure microscopic amplitude and 3-dimensional direction of vibrating objects.