• Journal of the Korean Society of Food Science and Nutrition
• /
• v.24 no.3
• /
• pp.396-403
• /
• 1995

Eightly nine common Korean foods were analyzed by the enzymatic-gravimetric method developed by Prosky et al. and adopted by AOAC to determine total dietary fiber(TDF) content. The average TDF content of the foods analyzed was 4.78${\pm}$3.55% for cereal and grain products, 2.56${\pm}$1.65% for potatoes and starches, 1.94${\pm}$0.77% for sugar and sweets, 10.81${\pm}$6.57% for pulse and pulse products, 9.70${\pm}$5.92% for nuts and seeds, 15..38${\pm}$15.76% for seasonings, and 4.98${\pm}$4.35% for beverages. The foods containing the highest TDF values in the food groups were whole grain barley(17.88%) in cereals, yellow soybean(21.05%) in pulses, black sesame(21.34%) in nuts and seeds, and red pepper powder(39.37%) in seasonings except San Cho powder(52.43%). TDF content of rice, the main staple food of Korea, was 2.75% for brown rice and 0.96% for well-milled rice. The TDF value of the foods analyzed ranged from 0.12 to 23.4 times that fo crude fiber reported in the Korean food composition tables. When we consider dietary fiber contents of foods and food consumption patterns together, it is recommended to consume brown rice instead of well-milled rice and increase the consumption of minor cereals and pulses to raise dietary fiber intake.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.49-49
• /
• 2008

ZnO-based varistors have been widely used for voltage stabilization or transient surge suppression in electric power systems and electronic circuits. Recently, It has reported that the varistor behavior with nonlinear coefficient of 6~17 in Mn-doped ZnO. In this study we have chosen the composition of ZnO-$TeO_2-Mn_3O_4$ (ZTM) system to the purpose of whether varistor behavior appeared in doped ZnO by the solid state sintering or not. We investigated the sintering and electric properties of 0.5~3.0 at% Mn doped ZnO-1.0 at% $TeO_2$ system. Electrical properties, such as current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy were conducted. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. The average grain size of sintered samples was at about $3{\mu}m$ and decreased with increasing Mn contents. It was found that a good varistor characteristics were developed in ZTM system sintered at $1100^{\circ}C$ (nonlinear coefficient $\alpha$ ~ 60). The results of C-V characteristics such as barrier height ($\Theta$), donor density ($N_d$), depletion layer (W), and interface state density ($N_t$) in ZTM ceramics were $4\times10^{17}cm^{-3}$, 0.7 V, 40 nm, and $1.6\times10^{12}cm^{-2}$, respectively. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots in ZTM system.

• Journal of the Korean Ceramic Society
• /
• v.43 no.11 s.294
• /
• pp.688-692
• /
• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• Journal of the Korean Ceramic Society
• /
• v.20 no.2
• /
• pp.99-106
• /
• 1983

This experiment has been carried out for the purpose of investigating the effect of $Ga_2O_3$ and $GeO_2$ additivies on sintering of magnesium oxide over the temperature range of 130$0^{\circ}C$~150$0^{\circ}C$. The effect of calcining temperature on the bulk densities of fired compacts prepared from this material was observed MgO powder has been obtained by calcining extra reagent grade magnesium carbonate(basic fired) at 90$0^{\circ}C$ for 30 minutes $Ga_2O_3$and GeO2 were added in the ratio of 1, 2, and 3 wt% to MgO and mixed with calcined MgO. The specimens were prepared by compression with pressure of $700kg/cm^2$ than fired at 130$0^{\circ}C$~150$0^{\circ}C$ for 0-5hrs. Sintering behaviour and microstructure of the fired specimens were examined. The optimum calcination temperature of magnesium carbonate was 90$0^{\circ}C$. Densification rates obeyed the equation D=K in t+c. Theoretical density in the case of addition of $Ga_2O_3$ was 23.1 kcal/mole in the case of the additive $GeO_2$ was 14.176kcal/mole. This low value would appear to support a machanism of grain boundatry diffusion The range of average grain size in the case of addition of $Ga_2O_3$ and $GeO_2$ was 21$\mu\textrm{m}$-31$\mu\textrm{m}$.

• Advances in materials Research
• /
• v.5 no.2
• /
• pp.93-105
• /
• 2016

KNN-based ceramics modified with small amounts of $Bi_4Zr_3O_{12}$ (BiZ) has been synthesized using high-throughput experimentation (HTE). The results from X-ray diffraction show that for samples with base composition $(K_{0.5}Na_{0.5})NbO_3$ (KNN), the phase present changes from orthorhombic to pseudo-cubic with more than 0.2 mol% BiZ addition; for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.9}Ta_{0.1})O_3$ (KNNLT), the phase present changes from a mixture of orthorhombic and tetragonal symmetry to pseudo-cubic with more than 0.4 mol % while for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.86}Ta_{0.1}Sb_{0.04})O_3$ (KNNLST), the phase present is tetragonal with <0.3 mol% BiZ addition and transforms to pseudo-cubic with more dopant addition. The microstructures of the samples show that addition of BiZ decreases the average grain size and increases the volume of pores at the grain boundaries. The values of dielectric constant for KNN and KNNLT compositions increase slightly with BiZ addition while that for KNNLST decreases gradually with BiZ addition. The dielectric loss values are between 0.02 and 0.04 for KNNLT and KNNLST compositions while they are ~ 0.05 for KNN samples. The resistivity values increases with BiZ addition and values in the range of $10^{10}{\Omega}cm$ and $10^{12}{\Omega}cm$ are obtained. The piezoelectric charge coefficient ($d{^*}_{33}$) is highest for KNNLST samples and decreases gradually from ~400 pm/V to ~100 pm/V with BiZ addition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.543-546
• /
• 2000

Ferroeleclric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4$\mu$m. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.06%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively. The pyroelectric coefficient of the x=0.65 specimen sintered at 125$0^{\circ}C$ was 5.64$\times$10$^{-8}$ C/cm$^2$K, respectively.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1283-1284
• /
• 2007

The barium strontium calcium titanate((Ba,Sr,Ca)$TiO_3$) powders prepared by the sol-gel method and $MnCO_3$ as acceptor were mixed oxide method. The microstructure was investigated with variation of $Pr_{2}O_{3}$ amount. The BSCT powder and $Pr_{2}O_{3}$ were mixed with organic vehicle(Ferro. B75001). BSCT thick films were fabricated by the screen-printing method on alumina substrates. The bottom electrode was Pt and upper electrode was Ag, respectively. All BSCT thick films were sintered at $1420^{\circ}C$, for 2h. The result of the differential thermal analysis(DTA), exothermic peak at around $654^{\circ}C$ due to the formation of the polycrystalline perovskite phase. In the X-ray diffraction(XRD) patterns, all BSCT thick films showed the typical perovskite polycrystalline structure and no pyrochlore phase was dbserved. The microstructure investigated by scanning electron microscope(SEM). Pore and grain size of BSCT thick films were decreased with increasing amount of $Pr_{2}O_{3}$ dopant. And the average grain size and thickness of BSCT thick films doped with 0.1 mol% $Pr_{2}O_{3}$ was $3.09{\mu}m$, $60{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss decreased with increasing amount of $Pr_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Pr_{2}O_{3}$ were 7443 and 4 % at 1 kHz, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.332-335
• /
• 2004

Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.

• Korean Journal of Metals and Materials
• /
• v.50 no.11
• /
• pp.817-822
• /
• 2012

Nano powders of $Al_2O_3$ and $TiO_2$ compounds made by high energy ball milling were pulsed current activated sintered for studying their sintering behaviors and mechanical properties. The advantage of this process is that it allows very quick densification to near theoretical density and inhibition of grain growth. Nano-structured $Al_2TiO_5$ with small amount of $Al_2O_3$ and$TiO_2$ was formed by sintering at $1300^{\circ}C$ for 5 minute, in which average grain size was about 96 nm. Hardness and fracture toughness of the nano-structured $Al_2TiO_5$ compound with a small amount of $Al_2O_3$ and$TiO_2$ were $602kg/mm^2$ and $2.6MPa{\cdot}m^{1/2}$, respectively.

• Korean Journal of Breeding Science
• /
• v.40 no.3
• /
• pp.243-249
• /
• 2008

In the previous study, 141 $BC_3F_2$ lines from a cross between the Oryza sativa cv. Milyang 23 and O. glaberrima were used to identify favorable wild QTL alleles for yield component traits. In this study, we carried out QTL analysis of four grain morphology as well as four yield component traits using 141 $BC_3F_5$ lines from the same cross and compared QTLs detected in two different generations. The mean number of O. glaberrima segments in the 141 $BC_3F_5$ lines ranged from 1 to 13 with 2.69 and 5.71 of the average means of homozygous and heterozygous segments, respectively. There was a three-fold difference in the number of QTLs detected for four traits commonly evaluated in two generations (seven QTLs in the $BC_3F_5$ vs 21 in the $BC_3F_2$ population). The percentages of the phenotypic variance explained by QTLs in the BC3F5 population were similar to or less than those in the $BC_3F_2$ population. This is probably due to the difference in the genetic composition of two populations and the environmental effects. The locations of the QTLs commonly detected in both generations were in good agreement except for one QTL for spikelets per panicle. The yield QTL, yd3 was colocalized with the spikelets per panicle, spp3. Yield increase at this locus is due to the increase in spikelets per panicle, because both traits were associated with increase in spikelets per panicle and yield due to the presence of an O. glaberrima allele. Clusters of QTLs for grain morphology traits were observed in two chromosome regions. One cluster harboring five QTLs near SSR markers RM106 and RM263 was detected on chromosome 2. This population would serve as a foundation for development of the introgression line population from a cross between Milyang 23 and O. glaberrima.