• Journal of Surface Science and Engineering
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• v.30 no.3
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• pp.183-190
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• 1997

Fabrication and crystallization characteristics of yttria($T_2O_3$) stabilized zirconia(YSZ) thin film by sol-gel process were studied. YSZ sol was synthesized with zirconium n-propoxide($Zr(OC_3H_7)_4)$) and yttrium nitrate pentahydrate ($Y(NO_3)_3.5H_2O$). YSZ film was prepared by depositing the polymeric sol on porous $Al_2O_3$ substrate by spin-coating, and the film characteristics were investigated by FRIR, TG-DTA, XRD, DSC, optical microscopy and SEM. The film topology was uniform and cracks were not found. It was found that the annealing temperature and the concentration of stabilizer affect the crystallization of YSZ film. The YSZ film began to crystallize from amorphous to tetragonal phase at 40$0^{\circ}C$, and it was not converted to cubic structure until $1100^{\circ}C$. It seemed that the grains were formed over $700^{\circ}C$and the average grain size was obtained about 0.2$\mu\textrm{m}$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.868-869
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• 2006

[ $Cr_2AlC$ ] was synthesized by a reactive hot pressing of $CrC_x(x=0.5)$ and Al powder mixture used as starting materials at the temperature range of $1200^{\circ}C{\sim}1400^{\circ}C$ under 25 MPa in Ar atmosphere. Fully dense $Cr_2AlC$ with high purity was synthesized by hot pressing $CrC_x$ and Al powder mixture at the temperature as low as $1200^{\circ}C$. The average grain size of synthesized bulk $Cr_2AlC$ was varied in the range of $10-100{\mu}m$ depending on hot pressing temperatures. The maximum flexural strength of synthesized bulk $Cr_2AlC$ exceeded 600 MPa.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1298-1299
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• 2006

In the present work, the influence of the ball-milling time, milling atmosphere and weight ratio of ball to powder on characteristics of $WO_3-CuO$ was studied. Results show that, the grain sizes of the $WO_3$ and CuO in the ball-milled powder mixture were significantly decreased with increasing the milling time. Those of each oxide ball-milled in Argon and Hexane atmosphere for 30 and 20 hour were about 98 and 84 nm, respectively. After milling of 20 hour in Hexane as PCA, the powder had a homogeneously mixed structure and the average size of $WO_3-CuO$ powders was determined to about 230nm.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2003.10a
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• pp.39-40
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• 2003

1) Using a developed high-frequency induction heated sintering method, the rapid densification of WC-Co hard materials was accomplished using ultra fine powders with 260 nm size within 1 minute. 2) The relative density of the composite was 99.5% for the applide pressure of 60MPa and the induced current for 90% output of total capacity. 3) The grain size of WC-Co hard materials is about 260nm and the average thickness of the binder phase determined is about 11nm. The fracture toughness and the hardness of this work 12 $MPa{\cdot}nm^2$, respectively. 4) Using pressureless sintering, we produced dense WC-Co hard materials with a relative density of 97% without applying pressure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.1
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• pp.37-44
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• 1993

Calcia stabilized zirconia polycrystal (Ca-TZP) powders synthesized by hydrothermal treatment was sintered at a temperature range of $1200^{\circ}C~1400^{\circ}C$ and investigated the properties of sintered body and the behaviors of isothermal phase transformation. The sintered bodies of Ca-TZP were shown the density of about 97% and the average mean tetragonal grain size of about $0.1~0.25{\mu}m$. Also, Ca-TZP specimen was more stable during aging at $250^{\circ}C$ than that of Y-TZP ceramics.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.17-22
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• 1998

B-doped ZnO thin films on glass substrates were prepared by sputtering the ceramic targets which had been prepared by sintering disks consisting of ZnO and various amounts of B2O3 While pure ZnO films show-ed a c-axis oriented growth the B-doping retarded the prefered orientation and grain growth of the film. Electron concentrations for undoped and B-doped ZnO films were on the order of 7.8${\times}$1018 cm-3 and 5${\times}${{{{ {10 }^{20 } }} c{{{{ {m }^{-3 } }} respectively. The electron mobility however decreased with the B-doping concentration. Optical meas-urements on the films showed that the average transmittance in the visible range was higher than 85% The measurements also indicated a blueshift of the absorption edge with doping.

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.504-509
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• 2018

The influence of yttrium doping on varistor properties of zinc-vanadium-based ceramics was comprehensively investigated. The average grain size varied slightly between 5.2 and $5.5{\mu}m$ as the yttrium content increased; and similarly, the sintered density varied slightly between 5.47 and $5.51g/cm^3$. The threshold field exhibited a maximum value (5387 V/cm) when the yttrium content was 0.1 mol%. The highest nonlinear exponent (67) was obtained when the yttrium content was 0.05 mol%. The donor concentration increased in the range of $(2.46-5.56){\times}10^{17}cm^{-3}$ as the yttrium content increased, and the maximum barrier height was obtained (1.24 eV) when the yttrium content reached 0.05 mol%.

• Transactions on Electrical and Electronic Materials
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• v.9 no.3
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• pp.96-100
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• 2008

The microstructure, voltage-current, and capacitance-voltage relations ofP CCYA doped ZnO-based varistors were investigated for different amounts of $Al_2O_3$. As the $Al_2O_3$ amount increased, the average grain size (d) increased from d=4.3 to $d=5.5{\mu}m$ and the sintered density $({\rho})$ increased from ${\rho}=5.63$ to ${\rho}=5.67g/cm^3$. As the $Al_2O_3$ amount increased, the breakdown voltage $(V_B)$ increased from $V_B=633$ to $V_B=71$ V/mm and the non-ohmic coefficient $({\alpha})$ increased from ${\alpha}=47$ to ${\alpha}=4$. $Al_2O_3$ served as a donor due to the donor density $(N_d)$, which increases in the range of $N_d=0.77-1.85{\times}10^{18}/cm^3$ with increasing amount of $Al_2O_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.374-378
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• 1999

Thin Films of BaYTiO system were Prepared by frequency (rf)/dc magnetron sputtering method. The preparation of target were accomplished by the mixed oxide method, and their composition consisted of the $Ba_{0.997}$ $Y_{0.003}$Ti $O_3$+0.5 $SiO_2$+x $M_{n}$O(x=0, 0.073, 0.1, 0.127, 0.154). The average particle size of (Ba,Y)Ti $O_2$ system ceramics with Mn $O_2$ additives increases as the amount of MnO additives increase and reaches the maximum grain growth when the amount of MnO is 0.127(mol%).).).).

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.80-84
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• 2009

The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.