• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.271-271
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• 2013

The defect states of a Ar-sputtered SiO2 surface on Si (001) were investigated using Auger electron spectroscopy (AES) and reflection electron energy loss spectroscopy (REELS). The REELS spectra at the primary electron energy of 500 eV showedthat three peaks at 2.5, 5.1, and 7.2 eV were found within the band gap after sputtering. These peaks do not appear at the primary electron energies of 1,000 and 1,500 eV, which means that the defect states are located at the extreme surface of a SiO2/Si thin film. According to the calculations, two peaks at 7.2 and 5.1 eV are related to neutral oxygen vacancies. However, the third peak at 2.5 eV has never been previously reported and the theories proposed that this defect state may be due to Si-Si bonding. Our Auger data showed that a peak for Si-Si bonding at 89 eV appears after Ar ion sputtering on the surface of the sample, which is consistent with the theoretical models.

• 한국진공학회지
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• 제17권4호
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• pp.311-316
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• 2008

저에너지(수 eV) 양전자 빔을 이용하여 도체나 반도체의 표면/계면의 물리화학적 특성 분석에 독특한 유용성이 보고 되고 있다. 기존의 표면 분석법에 비해 표면의 선택도가 향상되어 반도체 소자의 박막 두께가 얇아지는 최신기술에 적합한 분석법으로 주목을 받고 있다. 물질표면에 조사된 저에너지 양전자는 표면 근처의 image potential에 포획이 되어 표면에 있는 전자들과 쌍소멸하며 Auger 전자를 방출한다. 표면으로부터 방출된 Auger 전자의 에너지를 측정함으로 원자의 화학적 구별이 가능하므로 검출기의 에너지 분해도가 중요하다. 기존의 ExB 형태의 에너지 측정기는 분해도가 $6{\sim}10\;eV$ 정도이고 특정한 에너지 영역만을 일정시간 스캔하여 스펙트럼을 측정하므로 측정시간이 길어진다는 단점이 있다. 반면에 Time-Of-Flight(TOF) 시스템은 방출되는 전자들의 에너지를 동시에 검출하므로 측정시간이 단축되어 측정 효율이 향상된다. 에너지 분해도를 높이기 위해서는 측정하고자 하는 전자의 진행거리를 길게 할수록 좋으나, 공간적 제약을 고려한 reflected TOF 시스템과 retarding tube을 이용한 linear TOF 시스템의 에너지 분해도를 이론적으로 시뮬레이션하였다.

• 반도체디스플레이기술학회지
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• 제2권4호
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

• 대한전자공학회논문지SD
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• 제39권9호
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• pp.1-10
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• 2002

유기 발광 다이오드를 위한 indium oxide (ITO) 기판을 여러 가지로 방법으로 표면처리를 하고, 이에 따른 atomic force microscopy (AFM)에 의한 morphology의 변화와 표면에서 변화된 원소들의 조성비를 Auger electron spectroscopy (AES)분석에 의하여 조사하였다. 또한 이 기판을 사용하여 초고진공분자선 증착방법에 의하여 유기 발광다이오드를 제작하고 그 특성을 조사하였다. 그 결과 산소플라즈마으로 표면 처리한 ITO 기판 위에 제조된 organic light-emitting diode (OLED)소자의 특성이 향상되었다. 그것은 AES의 분석에 의하면 ITO 표면의 오염된 탄소가 제거되고 ITO의 일함수가 증가되어 정공이 유기물 층으로 용이하게 주입한 결과로 판단된다.

• E2M - 전기 전자와 첨단 소재
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• 제11권10호
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• pp.66-71
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• 1998

Plasma polymerized hexamethyldisiloxane (PPHMDSO) thin films were produced using an electrode capacitively coupled apparatus. Fourier transform infrared spectroscopy analysis indicated that the thin film spectra are composed not only of the corresponding monomer bands but also of several new bands. Auger electron spectroscopy analysis indicated that the permeation depth of aluminum into the films is ca. 30nm when top electrode is deposited by evaporation aluminum. The increase of relative dielectric constant and decrease of dielectric loss tangent with the discharge power is originated from high cross-link of the films.

• 대한전기학회논문지
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• 제41권8호
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• pp.875-882
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• 1992

Titanium carbide(TiC) films, known as having excellent characteristics of resistance to wear and corrosion, were deposited on SUS-304 sheets using HCD(Hollow Cathode Discharge) reactive ion plating with acetylene gas as the reactant gas. The characteristics of TiC films were examined by X-ray diffraction, micro-Vickers hardness tester, ${\alpha}$-step, SEM(Scanning Electron Spectroscopy), ESCA(Electron Spectroscopy for Chemical Analysis), and AES(Auger Electron Spectroscopy) and the results were discussed with regard to the changes of various deposition conditions(bias voltage, acetylene flow rate, temperature).

• 한국진공학회지
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• 제1권1호
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• pp.100-105
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• 1992

Au/V, Au/Ti의 이중구조 박막을 대기 중에서 $500^{\circ}C$에서 열처리한 후 Auger electron spectroscopy(AES)와 X-ray photoelectron spectroscepy(XPS)를 이용하여 분석 하였다. 열처리 과정에서 Au와 SiO2 기판 사이의 V-와 Ti- 하층박막은 Au 표면 위에 산화 물을 형성하였다. 산화물의 화학조성은 Au/V, Au/Ti 박막에서 V2O5와 TiO2로 각각 판명되었다.

• Tribology and Lubricants
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• 제24권6호
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• pp.302-307
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• 2008

The running-in behaviour of the metal carbon coating (WC/C) was evaluated with regard to its applicability as wear-resistant coating for key components in engines. Reciprocating wear tests under lubricated condition employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. Confocal microscopy and scanning electron microscopy were used to observe worn surfaces and the wear scars on the steel balls. Elemental composition of the coating and worn surfaces were characterized using Auger electron spectroscopy. The friction behavior of WC/C coating was comparable to common carbon-based coatings. Thin tribofilm was formed on the worn surface of the steel ball due to material transfer and tribochemical reaction whereas there was no evidence of tribofilm generation on the coating surface. indicating the chemical innertness of WC/C coating.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1995년도 제8회 학술발표회 논문개요집
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• pp.116-116
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• 1995

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제26회 학술발표회 초록집
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• pp.45-45
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• 2004