• Title/Summary/Keyword: AuSn

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Ultrasonic bonding between Si-wafer and FR-4 at room temperature using Sn-3.5Ag solder (Sn-3.5Ag 무연 솔더를 이용한 Si-wafer와 FR-4기판의 상온접합)

  • Kim, Jeong-Mo;Jo, Seon-Yeon;Kim, Gyu-Seok;Lee, Yeong-U;Jeong, Jae-Pil
    • Proceedings of the KWS Conference
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    • 2005.06a
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    • pp.54-56
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    • 2005
  • Ultrasonic soldering using of Si-wafer to FR-4 PCB atroom temperature was investigated. Sn3.5Ag foil rolled $100{\mu}m$ was used for solder. The UBM of Si-die was Cu/ Ni/ Al from top to bottom and its thickness was $0.4{\mu}m$, $0.4{\mu}m$, $0.3{\mu}m$ respectively. Pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom and its thickness was $0.05{\mu}m$, $5{\mu}m$, $18{\mu}m$ respectively. The ultrasonic soldering time was changed from 0.5sec to 3.0sec and its power 1400W. As experimental result, reliable bond joint by ultrasonic at room temperature was obtained. The shear strength increased with soldering time up to 2.5 sec. That means at 2.5sec, the shear strength showed maximum rate of 65.23N. The strength decreased to 33.90N at 3.0 sec because the cracks generated along the intermetallic compound between Si-wafer and Sn-3.5mass%Ag solder. intermetallic compound produced by ultrasonic between the solder and the Si-die was $(Cu, Ni)_{6}Sn_{5}$ and the intermetallic compound between solder and pad on FR-4 was $(Ni, Cu)_{3}Sn_{4}$.

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양산에 적합한 구조의 X-ray 검출기 공정에 대한 연구

  • Gwon, Jun-Hwan;O, Gyeong-Min;Song, Yong-Geun;Kim, Ji-Na;No, Seong-Jin;Nam, Sang-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.265-266
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    • 2012
  • 의료용 X-ray의 발전에 따라, 영상의 Digital화가 필요하게 되었다. Digital 영상 구현을 위해 다양한 형태의 영상 검출기가 개발되었다. 진단 영상의 조건으로는 구현 시간이 빠르고 해상도가 높아야 한다. 조건에 부합하는 Flat panel 형태의 직접방식과 간접방식 검출기의 개발이 주로 이루어졌으며, X-ray 검출 효율이 높고 공간 분해능이 높은 직접 방식의 검출기에 대한 연구가 활발히 진행되고 있다. 기존 직접방식의 X-ray 검출물질로는 A-Se이 이용되었다. 하지만 A-Se의 경우 낮은 원자번호로 인해 X-ray에 대한효율이 낮으며, 제조 공정과 수율의 문제로 인해 대체 물질의 개발과 공정의 개선이 필요하다. 선행 연구를 통해 X-ray 검출물질의 전기적 특성을 파악을 통해 대체 물질로서 가능성을 알아보았다. 본 연구에서는 기존에 제작된 X-ray 검출물질의 상부전극 증착 물질과 증착법 선정에 대한 연구이다. 선행 연구를 통해 선정된 X-ray 검출물질은 HgI2이다. 상, 하부 전극 선택에 있어 HgI2의 일함수 값(4.15eV)을 고려하여 그와 비슷한 일함수 값을 가진 물질로 전기적 장벽을 제거하여야 한다. 따라서, ITO (일함수 4.45eV)와 Au (일함수 5.1eV)을 선택하였다. ITO의 증착으로 이용된 방법으로는 on-axis 형태의 magnetron plasma sputtering을 이용하였으며, Au의 증착으로 이용된 방법은 Thermal evaporation deposition을 이용하였다. plasma sputtering에 이용된 타겟은 In2O3;SnO2 (조성비:90:10wt%)를 사용하였으며, Chamber의 크기는 넓이 456 ${\phi}cm^2$ 높이 25 cm이며, 로 target과 기판과의 거리는 15cm이다. plasma발생에 필요한 가스로는 Ar과 O2를 이용하였다. 고 진공 환경 조성에 이용된 장비로는 Rotary pump와 Turbo molecular pump이다. plasma 발생 전 진공도는 $3.2{\times}10^{-5}$ Torr, 발생 후 진공도는 $5.1{\times}10^{-5}$ Torr이다. plasma 환경이 조성된 후 증착 시간은 1분 30초이다. Au는 순도 99.999%를 이용하였으며, 이용된 금은 1회 증착에 0.3 g을 이용하였다. Chamber의 넓이 1,444 ${\phi}cm^2$이며, 높이 40 cm, boat와 기판과의 거리는 25 cm이다. 고 진공 환경 조성에 이용된 장비로는 Rotary pump와 diffusion pump를 이용하였다. Au의 승화 전 진공도는 $2.4{\times}10^{-5}$ Torr 증착 시 진공도는 $4.2{\times}10^{-5}$ Torr이며, Boat에 가해준 전압, 전류는 0.97 V, 47 A이며, 증착 시간은 1분 30초이다. 광도전체 층에 각각 증착된 전극의 저항을 통해 증착상태를 판단하였다. DMM (Digital Multimeter)로 1 cm 간격으로 측정된 표면의 저항은 ITO 약 $8{\Omega}$, Au 약 $3{\Omega}$으로 전극으로서 이용이 가능한 상태이다. Au와 ITO가 증착된 HgI2 시편의 전기적 특성은 기존에 이용된 X-ray 변환물질의 성능보다 우수하였다. 하지만 Au와 ITO가 각각 증착된 시편의 전기적 특성은 큰 차이를 보이지 않았다. ITO의 경우 진공 상태에서 이용되는 Gas가 이용되며, Plasma 환경 조성 유지가 어려운 점이 있다. Au전극은 증착 환경 조성이 쉽지만, 전극 물질 이용효율이 떨어지는 단점이 있다. 본 연구를 통해 X-ray 변환물질인 HgI2의 전극물질로 Au와 ITO의 이용가능성을 알아보았다. 두 전극으로 제작된 검출기의 성능은 큰 차이 없이 우수하였고, 전기적 장벽 상태가 낮아 높은 검출 효율을 보였다. 상대적으로 Au 전극의 공정이 간단하고 수율이 높다. 하지만 Au Source의 이용 효율이 떨어지는 단점이 있다. 본 연구의 결과를 통해 공정상의 유리함과 Source의 이용효율을 고려한 분석에 대한 연구가 필요할 것으로 사료된다.

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An experimental study of the strength and internal structure of solder joint of fixed partial denture (가공의치(架工義齒) 납착부(蠟着部)의 강도(强度)와 내부구조(內部構造)에 관(關)한 실험적(實驗的) 연구(硏究))

  • Park, Sang-Nam;Kay, Kee-Sung
    • The Journal of Korean Academy of Prosthodontics
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    • v.23 no.1
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    • pp.39-59
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    • 1985
  • The purpose of this study was to investigate how gap distances of 0.13mm, 0.15mm, 0.20mm, and 0.30mm affects solder joint strength from gold alloys and nickel-chromium base alloys and to examine the composition of solder gold, the solder joint of gold alloys and nickel-chromium base alloys. The tensile test specimens were prepared in the split stainless steel mold with a half dumbbell shape 2.5mm in diameter and l2mm in length. 6 pairs of specimens of each gap distance group of gold alloys and nickel-chromium base alloys were made and 48 pairs of all specimens were soldered with solder gold of 666 fineness. All soldered specimens were machined to a uniform diameter and then a tensile load was applied at a cross-head speed of 0.10mm/min using Instron Universal Testing Machine, Model 1115. The fractured specimens at solder gold of solder joint fracture with each gap distance of 0.13mm, 0.15mm, 0.20mm, and 0.30mm were examined under the Scanning Electron Microscope, JSM-35c and the composition of solder gold, the solder joint of gold alloys and nickel-chromium base alloys was analyzed by Electron Probe Micro Analyzer. The results of this study were obtained as follows: 1. In case of soldering of gold alloys, the tensile strength between gold alloys showed $37.33{\pm}2.52kg/mm^2$ at 0.13, $39.14{\pm}3.35kg/mm^2$ at 0.15mm, $43.76{\pm}2.97kg/mm^2$ at 0.20mm, and $49.18{\pm}4.60kg/mm^2$ at 0.30mm. There was statistically significant difference at each gap distance, and so the greater increase of gap distance showed the greater tensile strength. 2. In case of soldering of nickel-chromium base alloys, the tensile strength between nickel-chromium base alloys showed $34.84{\pm}4.26kg/mm^2$ at 0.13mm, $37.25{\pm}2.49kg/mm^2$ at 0.15mm, $42.91{\pm}4.32kg/mm^2$ at 0.20mm, and $46.93{\pm}4.21kg/mm^2$ at 0.30mm. There was not statistically significant difference only between 0.13mm and 0.15mm and bet ween 0.20 mm and 0.30mm, but generally the greater increase of gap distance showed the greater tensile strength. 3. The greater increase of gap distance shoed less porosities in solder gold at solder joint fracture. 4. In solder gold Au, Cu, Ag, Zn, and Sn were composed and Au and Cu were mostly distributed uniformly. 5. In solder joints of solder gold and gold alloys Au, Cu, Ag, Zn, and Sn were composed in solder gold and Au, Cu, Ag, Pt, and Pd were composed in gold alloys. Au and Cu of solder gold and gold alloys were mostly distributed uniformly and the diffusion of other elements except Pt and Pd around the solder joint was not almost found. In solder joints of solder gold and nickel-chromium base alloys Au, Cu, Ag, Zn, and Sn were composed in solder gold and Ni, Cr, and Al were composed in nickel-chromium base alloys. Au and Cu of solder gold and Ni and Cr of nickel-chromium base alloys were mostly distributed uniformly and the diffusion of other elements except Cr around the solder joint was not almost found.

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Fluxless Plasma Soldering of Pb-free Solders on Si-wafer -Effect of Plasma Cleaning - (Si-wafer의 플럭스 리스 플라즈마 무연 솔더링 -플라즈마 클리닝의 영향-)

  • 문준권;김정모;정재필
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.1
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    • pp.77-85
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    • 2004
  • To evaluate the effect of plasma cleaning on the soldering reliability the plasma cleaning using Ar-10vol%$H_2$ gas was applied on a UBM(Under Bump Metallization). The UBM consisted of Au/ Cu/ Ni/ Al layers which were deposited on a Si-wafer with 20 nm/ 4 $\mu\textrm{m}$/ 4 $\mu\textrm{m}$/ 0.4 $\mu\textrm{m}$ thickness respectively. Sn-3.5%Ag, Sn-3.5%Ag-0.7%Cu and Sn-37%Pb solder balls sized of 500 $\mu\textrm{m}$ in diameter were used. Solder balls on the UBM were plasma reflowed under Ar-10%$H_2$ plasma (with or without plasma cleaning). They were compared with air reflowed solder balls with flux. The spreading ratios of plasma reflowed solder with plasma cleaning was 20-40% higher than that of plasma reflowed solder without plasma cleaning. The shear strength of plasma reflowed solder with plasma cleaning was about 58-65MPa. It showed 60-80% higher than that of plasma reflowed solder without plasma cleaning and 15-35% higher than that of air reflowed solder. Thus it was believed that plasma cleaning for the UBM using Ar-10vol%$H_2$ gas was considerably effective for the improvement of the strength of solder ball.

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Shearing Characteristics of Sn3.0AgO.5Cu Solder Ball for Standardization of High Speed Shear Test (고속전단시험의 표준화를 위한 Sn3.0Ag0.5Cu 솔더볼의 전단특성)

  • Jung, Do-Hyun;Lee, Young-Gon;Jung, Jae-Pil
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.1
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    • pp.35-39
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    • 2011
  • Shearing characteristics of Sn-3.0wt%Ag-0.5wt%Cu ball for standardization of high speed shear test were investigated. The solder ball of 450 ${\mu}m$ in diameter was reflowed at $245^{\circ}C$ on FR4 PCB (Printed Circuit Board) to prepare a sample for the high-speed shear test. The metal pads on the PCB were OSP (Organic Solderability Preservative, Cu pad) and ENIG (Electroless Nickel/Immersion Gold, i.e CulNi/Au). Shearing speed was varied from 0.5 to 3.0 m/s, and tip height from 10 to 135 ${\mu}m$. As experimental results, for the OSP pad, a ductile fracture increased with tip height, and it decreased with shearing speed. In the case of ENIG pad, the ductile fracture increased with the tip height. The tip height of 10 ${\mu}m$ (2% of solder ball diameter) was unsuitable since the fracture mode was mostly pad lift. Shear energy increased with increasing shearing tip height from 10 to 135 ${\mu}m$ for both of OSP and ENIG pads.

Fabrication and Characterization of the ITO/Au/ITO Thin Film Gas Sensor by RF Magnetron Sputtering and electron Irradiation (RF 스퍼터와 전자빔 조사를 이용한 ITO/Au/ITO 가스센서 제조 및 특성 평가)

  • Heo, Sung-Bo;Lee, Hak-Min;Kim, Yu-Sung;Chae, Ju-Hyun;You, Yong-Zoo;Kim, Dae-Il
    • Journal of the Korean Society for Heat Treatment
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    • v.24 no.2
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    • pp.87-91
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    • 2011
  • Single layer Sn doped $In_2O_3$ (ITO) films and ITO 50 nm / Au 10 nm / ITO 40 nm (IAI) multilayer films were prepared with electron beam assisted magnetron sputtering on glass substrates. The effects of the Au interlayer, post-deposition atmosphere annealing and intense electron irradiation on the methanol gas sensitivity were investigated at room temperature. As deposited ITO films did not show any diffraction peaks in the XRD pattern, while the IAI films showed the diffraction peak for $In_2O_3$ (400). In this study, the gas sensitivity of ITO and IAI films increased proportionally with the methanol vapor concentration and an intense electron beam irradiated IAI film shows the higher sensitivity than the others film. From the XRD pattern, it is supposed that increased crystallization promotes the gas sensitivity. This approach is promising in gaining improvement in the performance of IAI gas sensors used for the detection of methanol vapor at room temperature.

Wetting Characteristic of Solder Particle for Electrically Conductive Adhesive (도전성 접착제에서의 솔더입자의 젖음 특성)

  • Yang, Gyeong-Cheon;Jo, Sang-Hyeon;Jo, Yun-Seong;Lee, Seon-Byeong;Lee, Seong-Hyeok;Sin, Yeong-Ui;Kim, Jong-Min
    • Proceedings of the KWS Conference
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    • 2006.10a
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    • pp.175-177
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    • 2006
  • Electrically Conductive Adhesives(ECAs) with solderable particles have been developed as an alternative to Pb-free solders. Our previous study proved that good wettability of solder particle is a prerequisite for the establishment of conduction paths. In this paper, two types of ECAs were formulated and the wetting characteristic low-melting-point Sn-In solder on Cu and Ni/Au pads was investigated. It was found that Sn-In solder in the developed resin material with reduction capability shows good wettability, especially on Cu pad.

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Development of Packaging Technology for CdTe Multi-Energy X-ray Image Sensor (CdTe 멀티에너지 엑스선 영상센서 패키징 기술 개발)

  • Kwon, Youngman;Kim, Youngjo;Ryu, Cheolwoo;Son, Hyunhwa;Kim, Byoungwook;Kim, YoungJu;Choi, ByoungJung;Lee, YoungChoon
    • Journal of the Korean Society of Radiology
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    • v.8 no.7
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    • pp.371-376
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    • 2014
  • The process of flip-chip bump bonding, Au wire bonding and encapsulation were sucessfully developed and modularized. The CdTe sensor and ROIC were optimally jointed together at $150^{\circ}C$ and $270^{\circ}C$ respectively under24.5 N for 30s. To make SnAg bump on ROIC easy to be bonded, the higher bonding temperature was established than CdTe sensor's. In addition, the bonding pressure was lowered minimally because CdTe Sensor is easier to break than Si Sensor. CdTe multi-energy sensor module observed were no electrical failures in the joints using developed flip chip bump bonding and Au wire bonding process. As a result of measurement, shearing force was $2.45kgf/mm^2$ and, it is enough bonding force against threshold force, $2kgf/mm^2s$.

Copper Filling to TSV (Through-Si-Via) and Simplification of Bumping Process (비아 홀(TSV)의 Cu 충전 및 범핑 공정 단순화)

  • Hong, Sung-Jun;Hong, Sung-Chul;Kim, Won-Joong;Jung, Jae-Pil
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.3
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    • pp.79-84
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    • 2010
  • Formation of TSV (Through-Si-Via) with an Au seed layer and Cu filling to the via, simplification of bumping process for three dimensional stacking of Si dice were investigated. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process using $SF_6$ and $C_4F_8$ plasmas alternately. The vias were 40 ${\mu}m$ in diameter, 80 ${\mu}m$ in depth, and were produced by etching for 1.92 ks. On the via side wall, a dielectric layer of $SiO_2$ was formed by thermal oxidation, and an adhesion layer of Ti, and a seed layer of Au were applied by sputtering. Electroplating with pulsed DC was applied to fill the via holes with Cu. The plating condition was at a forward pulse current density of 1000 mA/$dm^2$ for 5 s and a reverse pulse current density of 190 mA/$dm^2$ for 25 s. By using these parameters, sound Cu filling was obtained in the vias with a total plating time of 57.6 ks. Sn bumping was performed on the Cu plugs without lithography process. The bumps were produced on the Si die successfully by the simplified process without serious defect.

Synthesis of Mesoporous Tin Oxide and Its Application as a Gas Sensor (메조세공을 갖는 이산화 주석의 합성 및 가스센서로서의 응용)

  • Kim, Nam-Hyon;Kim, Geon-Joong
    • Applied Chemistry for Engineering
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    • v.18 no.2
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    • pp.142-147
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    • 2007
  • In this study, mesoporous tin oxide was synthesized by sol-gel method using $C_{16}TMABr$ surfactant as a template in a basic condition. The optimum conditions for the synthesis of mesoporous $SnO_2$ were investigated and the obtained samples were characterized by XRD, nitrogen adsorption and TEM analysis. A mesoporous and nanostructured $SnO_2$ gas sensor with Au electrode and Pt heater has been fabricated on alumina substrate as one unit via a screen printing process. Sensing abilities of fabricated sensors were examined for CO and $CH_4$ gases, respectively, at $350^{\circ}C$ in the concentration range of 1~10,000 ppm. Influence of loading amount of palladium impregnated on $SnO_2$ was also tested in detection of those gases. High sensitivity to detecting gases and the fast response speed with stability were obtained with the mesoporous tin oxide sensor as compared to a non-porous one under the same detection conditions.