• Journal of Electrochemical Science and Technology
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• v.10 no.3
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• pp.284-293
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• 2019

Herein, we report an electrode surface with a hierarchical assembly of wild-type M13 virus nanofibers (M13) to nucleate the AuPt alloy nanostructures by electrodeposition. M13 was pulled on the electrode surface to produce a virus film, and then a layer of sol-gel matrix (SSG) was wrapped over the surface to protect the film, thereby a bio-template was constructed. Blending of metal binding domains of M13 and amine groups of the SSG of the bio-template were effectively nucleate and directed the growth of nanostructures (NSs) such as Au, Pt and AuPt alloy onto the modified electrode surface by electrodeposition. An electrocatalytic activity of the modified electrode toward methanol oxidation in alkaline medium was investigated and found an enhanced mass activity ($534mA/mg_{Pt}$) relative to its controlled experiments. This bio-templated growth of NSs with precise composition could expedite the intention of new alloy materials with tuneable properties and will have efficacy in green energy, catalytic, and energy storage applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.37-37
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• 1997

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.172-173
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• 2006

Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.402-402
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• 2010

The formation of Au nano particles from thin films on patterned substrates depends sensitively on film thickness and time. The nano Au line and shape formed by annealing Au films on patterned oxide substrates are different from those formed on semiconductor. In this experiment, we deposited thin Au films on patterned $Al_2O_3$(0006) using E-beam evaporator, and annealed them at various temperatures and thickness under various conditions by RTA. We measured behavior of the Au during annealing Au structure and shape are changed when Au film becomes thicker. The shape of the resultant Au nano particles and their coarsening process are investigated using SEM and XRD.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1011-1015
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• 2002

In this study, Au thin films were etched with a Cl$_2$/Ar gas combination in an inductively coupled plasma. The highest etch rate of the Au thin film was 3500 A/min at a Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in Cl$_2$/Ar plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions[l].

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.100-102
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• 2000

Co fine particles were dispersed in Au metal and $AlO_x$ amorphous matrices by vacuum evaporation and rf-sputtering, respectively, thus forming granular composite films having chemical compositions of $Co_{0.59}-Au_{0.41}$ and $Co_{0.52}/(AlO_x$)_{0.48}$. The films were annealed at 200~$500^{\circ}C$ to increase the size of the Co particles, from 30$\AA$ to 180$\AA$ in the Au matrix and 40$\AA$ to 180$\AA$ in the $AlO_x$ matrix, as revealed by X-ray diffraction analysis. The Co metal in as-deposited films have saturation magnetization equivalent to that of bulk Co, which is unchanged by the annealing, showing that the Co metal is not oxidized by the annealing. Magneto-optical Kerr rotation measured at $\lambda$=400-900nm for the $Co_{0.59}-Au_{0.41}$ film as deposited is larger than that calculated for the composition. The rotation increases as the film is annealed at $200^{\circ}C$ and $300^{\circ}C$, approaching to that of bulk Co. The Kerr rotation for the $Co_{0.52}-(AlO_x)_{0.48}$ film as deposited is smaller than that calculated for the composition based on Bruggeman effective medium theory. However, the rotation increases much, exceeding the rotation of the bulk Co as annealed at $300^{\circ}C$ and $400^{\circ}C$. As a possible origin of the marked magneto-optical enhancement a weak localization of light in granular structure is suggested.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.25-30
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• 2003

The total relaxed stress in annealing and the thermal strain/stress were obtained from the identification of the residual stress-free state using electronic speckle pattern interferometry (ESPI). The residual stress fields in case of both single and film/substrate systems were modeled using the thermo-elastic theory and the relationship between relaxed stresses and displacements. We mapped the surface residual stress fields on the indented bulk Cu and the 0.5 ${\mu}m$ Au film by ESPI. In indented Cu, the normal and shear residual stress are distributed over -1.7 GPa to 700 MPa and -800 GPa to 600 MPa respectively around the indented point and in deposited Au film on Si wafer, the tensile residual stress is uniformly distributed on the Au film from 500 MPa to 800 MPa. Also we measured the residual stress by the x-ray diffractometer (XRD) for the verification of above residual stress results by ESPI.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1537-1540
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• 2003

MEMS technology with micro scale is complete system utilized as the sensor. micro electro device. The metallization of MEMS is very important to transfer the power operating the sensor and signal induced from sensor part. But in the MEMS structures local stress concentration and deformation is often happened by geometrical shape and different constraint on the metallization. Therefore. this paper studies the effect of supporting type and thickness ratio about thin film thickness of the substrate thickness for the residual stress variation caused by thermal load in the multi-layer thin film. Specimens were made from materials such as Al, Au and Cu and uniform thermal load was applied, repeatedly. The residual stress was measured by FEA and nano-indentation using AFM. Generally, the specimen made of Al induced the large residual stress and the 1st layer made of Al reduced the residual stress about half percent than 2nd layer. Specimen made of Cu and Au being the lower thermal expansion coefficient induce the minimum residual stress. Similarly the lowest indentation length was measured in the Au_Cu specimen by nano-indentation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.5
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• pp.532-538
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• 2004

MEMS technology applying to the sensors and micro-electro devices is complete system. These microsystems are made by variable processes. Especially, the mentallization process has very important functions to transfer the power operating the sensor and signal induced from sensor part. But in the structures of MEMS the local stress concentration and deformation are often yielded by an irregular geometrical shape and different constraint. Therefore, this paper studies the effect of supporting type and thickness ratio about thin film of the substrate on the residual stress variation when the thermal loads is applied to the multi-layer thin film fabricated by metallization process. Specimens were made from several materials such as Al, Au and Cu. Then, uniform thermal load was applied, repeatedly. The residual stress was measured by FE Analysis and nano-indentation method using AFM. Generally, the specimen made of Al induced the larger residual stress than that of made of other materials. Specimen made of Cu and Au having the low thermal expansion coefficient induces the minimum residual stress. Similarly, the lowest indentation length was measured by nano-indentation method in the Si/Au/Cu specimen. Particularly, clusters are created in the specimen made of Cu by thermal load and the indentation length became increasingly large by cluster formation.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.49-51
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• 2002

In this thesis, Josephson junction using high-Tc superconducting multi-layer thin film has been fabricated by on-axis RF magnetron sputtering method. And, the characterizations were performed by X-ray diffraction, SEM and the measuring system of critical current density. The physical properties of multi-layer superconducting thin films were also analyzed with the measured results. To fabricate the multi-layer superconducting thin films, the optimum partial pressure of Argon and Oxgen and the temperature of substrate were measured. Also, YBaCuO thin film was grown on MgO and $SrTiO_3$ substrates by rf-sputtering and LGO thin film of 30 A was epitaxially grown on the YBaCuO thin film as a josephson junction with the same condition. The schottky barrier at the contact surface between YBaCuO/LGO and YBaCuO/Au and the energy gap of 0.5 ${\sim}$ 0.6 mV in Nb were observed from the dI/dV-V of YBaCuO/LGO/Au/Nb and YBaCuO/Au/Nb.