• Journal of the Korean Vacuum Society
• /
• v.21 no.6
• /
• pp.354-361
• /
• 2012

The organic memory device was made by the plasma polymerization method which was not the dry process but the wet process. The memory device consist of the styrene and MMA monomer as the insulating layer, MMA monomer as the tunneling layer and Au thin film as the memory layer which was fabricated by thermal evaporation method. The I-V characteristics of fabricated memory device got the hysteresis voltage of 27 V at 40/-40 V double sweep measuring conditions. At this time, the optimized structure was 7 nm of Au thin film as floating gate, 400 nm of styrene thin film as insulating layer and 30 nm of MMA thin film as tunneling layer. Therefore we got the charge trapping characteristics by the hysteresis voltage. From the paper, styrene indicated a good charge trapping characteristics better than MMA. In the future, we expect to make devices by using styrene thin film rather than Au thin film.

• Journal of the Korean institute of surface engineering
• /
• v.53 no.1
• /
• pp.36-42
• /
• 2020

In this study, two novel methods to measure the surface hardness of anodic oxide films on aluminum alloys are reported. The first method is to impregnate oil-based ink into pores in the anodic oxide film and then to clean the ink on the surface using ethanol, resulting in an impregnation of inks only inside of the pores in anodic oxide film. The second method is to coat the anodic oxide film surface with thin Au layer less than 0.1 ?. Both the ink-impregnating method and Au-coating method provided clear indentation marks on the anodic oxide film surface when it was indented using a pyramidal-diamond penetrator. Thus, Vickers hardness of anodic oxide films on aluminium alloy could be measured successfully and precisely from the anodic film surface. In addition, advantages and disadvantages of the ink-impregnating method and Au-coating method for the measurement of surface hardness of anodic oxide films are discussed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1640-1644
• /
• 2006

The first issue that should be overcome in copper process is its poor adhesive strength between pure copper film and glass substrate. In this study, defining the adhesive strength of pure copper film on various substrates and clarifying the key deposition parameters are presented for the investigation of copper process. First, using different kinds of surface plasma treatments were studied and the results showed that the adhesive strength was not improved even though the roughness of glass substrate surface was increased. Second, adding an adhesive layer between glass substrate and pure copper film was used to enhance the adhesion. Based on the data in the present paper, adopting copper alloy film as an adhesive layer can have capability preventing peeling problem in copper process. Besides, Cu/Cu alloy structure could be etched with the same etchant with better taper angle than the one with single layer of Cu. Unlike Cu/Mo structure, there is no residual problem for Cu/Cu alloy structure during etching process. Finally, this structure was examined in electrical test without significant difference in comparison with the conventional metal process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.922-925
• /
• 2003

The interest of self-organization materials that have uniform and regular structure in nano scale has been grown due to their utilization in various fields of nanotechnology. An attractive candidate among these materials is anodic aluminum oxide film, which are formed by anodization of aluminum in an appropriate acid solution. The anodic aluminum oxide film has a highly ordered porous structure with very uniform and nearly parallel pores that can be organized in an almost precise close-packed hexagonal structure. In this study, we attempt to make Au dot arrays, which were fabricated using anodic aluminum oxide film as an evaporation mask. The Au dot arrays have a uniform sized dots and spacing to its neighbors and the average diameter of Au dots is about 60 nm corresponding to them of the mask.

• Journal of the Korean Vacuum Society
• /
• v.8 no.4B
• /
• pp.514-518
• /
• 1999

Gold (Au) is not supposed to react with sapphire(single crystalline ) under thermodynamic equillibrium, therefore, a strong adhesion between these two dissimilar materials is not expected. However, pull test showed that the gold film sputter-deposited onto annealed and pre-sputtered sapphire exhibited very strong adhesion even without post-deposition annealing. Strongly and weakly adhered samples as a result of the pull testing were selected to investigate the adhesion mechanisms with Auger electron spectroscopy. The Au/ interfaces were analyzed using a new technique that probes the interface on the film using Auger electron escape depth. It revealed that one or two monolayers of Au-Al-O compound formed at the Au/Sapphire interface when AES in the UHV chamber. It showed that metallic aluminum was detected on the surface of sapphire substrates after irradiating for 3 min. with 7keV Ar+ -ions. These results agree with TRIM calculations that yield preferential ion-beam etching. It is concluded that the formation of Au-Al-O compound, which is responsible for the strong metal-ceramic bonding, is due to ion-induced cleaning and reduction of the sapphire surface, and the kinetic energy of depositing gold atoms, molecules, and micro-particles as a driving force for the inter-facial reaction.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.5
• /
• pp.1748-1752
• /
• 2012

We carried out the tip-enhanced Raman scattering (TERS) with a tip that is functionalized with a Aunanoparticle (AuNP, with a diameter of 250 nm). The AuNP tip is fabricated by a direct mechanical pickup of a AuNP from a flat substrate, and the TERS signal from the AuNP tip - organic monolayer - Au thin film (thickness of 10 nm) is recorded. We find that such a AuNP-tip interacting with a thin film routinely yields signal enhancement larger than ${\sim}10^4$, which is sufficient not only for local (with detection area of ~200 $nm^2$) Raman spectroscopy, but also the nanometric imaging of organic monolayers within a reasonable acquisition time (~20 minutes/image).

• Applied Science and Convergence Technology
• /
• v.24 no.4
• /
• pp.117-124
• /
• 2015

A direct growth method of graphene on insulating substrate without catalyst etching and transfer process was developed using Au/Ni/a-C catalyst system. During the growth process, behavior of the Au/Ni catalyst was investigated using EDX, XPS, SEM, and Raman spectroscopy. The Au/Ni catalyst layer was evaporated during growth process of graphene. The graphene film was composed mono-layer flakes. The transmittance of the graphene film was ~80.6%.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1122-1124
• /
• 2009

Organic thin-film transistors (OTFTs) were fabricated by using the transfer patterning method. In order to remove Au pattern easily, UV-curable polymer mold was surface treated. Au source/drain (S/D) pattern was transferred to insulator-coated substrate surface. Fabricated OTFTs were compared to OTFTs using vacuum-deposited Au S/D. Additionally, transistor diodes were characterized.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.1
• /
• pp.23-28
• /
• 1999

Au fine particles dispersed $TiO_{2}$ film was prepared on silica glass substrate by sol-gel dipping and firing process. The $TiO_{2}$ films were fabricated from the system of titanium tetraisopropoxide-EtOH-HCl-$H_{2}O$-hydrogen tetrachloroaurat (III) tetrahydrate. The conditions for the formation of clear solution and dissolving high concentration of Au compound were examined. Photoreduction process was adopted to control the size of gold metal particles. Phase evolution of matrix $TiO_{2}$ and variation of Au particle with UV irradiation were investigated by XRD, SEM, TEM and UV-visible spectrophotometer. The effect of CPCl (Cetylpyridinium chloride monohydrate) as a dispersion agent was evaluated.

• Electrical & Electronic Materials
• /
• v.10 no.1
• /
• pp.39-44
• /
• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.