• 제목/요약/키워드: Au-film

검색결과 446건 처리시간 0.029초

띠 굽힘 시험을 통한 100 nm 두께 금 박막의 기계적 특성 평가 (Mechanical characterization of 100 nm-thick Au thin film using strip bending test)

  • 김재현;이학주;한승우;백창욱;김종만;김용권
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2004년도 춘계학술대회
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    • pp.252-257
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    • 2004
  • Nanometer-sized structures are being applied to many devices including micro/nano electronics, optoelectronics, quantum devices, MEMS/NEMS, biosensors, etc. Especially, the thin film with submicron thickness is a basic structure for fabricating these devices, but its mechanical behaviors are not well understood. The mechanical properties of the thin film are different from those of the bulk structure and are difficult to measure because of its handling inconvenience. Several techniques have been applied to mechanical characterization of the thin film, such as nanoindentation test, micro/nano tensile test, strip bending test, etc. In this study, we focus on the strip bending test because of its high accuracy and moderate specimen preparation efforts, and measure Au thin film, which is a very popular material in micro/nano electronic devices. Au film is deposited on Si substrate by evaporation process, of which thickness is 100nm. Using the strip bending test, we obtain elastic modulus, yield and ultimate tensile strength, and residual stress of Au thin film.

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마그네트론 스퍼터링법으로 증착한 Au 박막의 전기전도특성에 미치는 열처리 온도와 Ta 삽입층의 영향 (The effect of annealing temperature and Ta layer on the electric conductivity of Au thin film deposited by the magnetron sputtering)

  • 최혁철;유천열
    • 한국진공학회지
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    • 제16권6호
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    • pp.433-438
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    • 2007
  • 열처리 온도에 따른 Au 결정립 크기의 변화와 표면 거칠기 및 전기전도도를 연구하기 위해 dc 마그네트론 스퍼터링법을 사용하여 Si(111) 또는 Si(100) 기판위에 Au (30nm) 와 Ta (5 nm)/Au (30 nm) 를 증착하였다. 열처리 온도가 증가함에 따라 시료의결정립 크기가 증가하였고, 박막 표면 거칠기 또한 증가함을 확인하였다. Si/Au보다Si/Ta/Au구조에서 결정립 크기가 증가하였고 표면거칠기는 감소되었으며 Si(111)기판보다 Si(100) 기판위의 Ta/Au구조에서 전기 저항이 감소되었다. Si(100)/Au구조에 5 nm 두께의 Ta의 buffer layer를 삽입하여 표면 거칠기 정도를 낮춤과 동시에 열처리 온도를 적절히 조절하여 결정립 크기를 증가시킴으로서 전도성이우수한 양질의 Au 박막을 얻을 수 있었다.

Au/Au-Sn 이종접합 적용 레이저 패키징을 통한 Vapor Cell 신뢰성 연구 (Study on Reliability of Vapor Cell by Laser Packaging with Au/Au-Sn Heterojunction)

  • 권진구;전용민;김지영;이은별;이성의
    • 한국전기전자재료학회논문지
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    • 제33권5호
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    • pp.367-372
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    • 2020
  • As packaging processes for atomic gyroscope vapor cells, the glass tube tip-off process, anodic bonding, and paste sealing have been widely studied. However, there are stability issues in the alkali metal which are caused by impurity elements and leakage during high-temperature processes. In this study, we investigated the applicability of a vapor cell low-temperature packaging process by depositing Au on a Pyrex cell in addition to forming an Au-Sn thin film on a cap to cover the cell, followed by laser irradiation of the Au/Au-Sn interface. The mechanism of the thin film bonding was evaluated by XRD, while the packaging reliability of an Ne gas-filled vapor cell was characterized by variation of plasma discharge behavior with time. Furthermore, we confirmed that the Rb alkaline metal inside the vapor cell showed no color change, indicating no oxidation occurred during the process.

Synthesis and characterization Au doped TiO2 film for photocatalytic function

  • Son, Jeong-Hun;Bae, Byung-Seo;Bae, Dong-Sik
    • 한국결정성장학회지
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    • 제25권6호
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    • pp.280-284
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    • 2015
  • Au doped $TiO_2$ nanoparticles have been synthesized using a reverse micelle technique combined with metal alkoxide hydrolysis and condensation. Au doped $TiO_2$ was coated with glass substrate. The size of the particles and thickness of the coating can be controlled by manipulating the relative rates of the hydrolysis and condensation reaction of TTIP within the micro-emulsion. The average size of synthesized Au doped $TiO_2$ nanoparticle was about in the size range of 15 to 25 nm and the Au particles formed mainly the range of 2 to 10 nm in diameter. The effect of synthesis parameters, such as the molar ratio of water to TTIP and the molar ratio of water to surfactant, are discussed. The synthesized nanopaticles were coated on glass substrate by a spin coating process. The thickness of thin film was about 80 nm. The degradation of MB on a $TiO_2$ thin film was enhanced over 20 % efficiency by the incorporation of Au.

졸-겔법에 의한 나노 사이즈 Au 미립자 분산 ZrO2 박막의 특성 (Properties of Nano-sized Au Particle Doped ZrO2 Thin Film Prepared by the Sol-gel Method)

  • 이승민;문종수
    • 한국세라믹학회지
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    • 제40권12호
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    • pp.1197-1201
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    • 2003
  • 대기 중에서 침전이 생기지 않고 코팅에 적합한 나노크기 Au 미립자가 분산된 ZrO$_2$ 용액을 제조하여, 딥-코팅법으로 SiO$_2$ 유리기판 위에 박막을 제조했다. 이 박막을 열처리하여 열분석, 엑스선 회절분석, 분광분석, 원자력간 현미경, 주사전자현미경 및 투과전자현미경 관찰 등을 통하여 박막의 특성을 조사하였다. ZrO$_2$ 박막은 50$0^{\circ}C$에서 정방정상으로 결정전이가 관찰되었고, 박막의 두께는 약 100nm였다. 분산된 입자의 크기는 약 15∼40nm이며, 표면 거칠기는 0.84nm로 우수한 막질을 나타냈다. 그리고 Au 입자의 표면플라즈마 공명에 의한 흡수피크를 630∼670nm 파장범위에서 확인할 수 있었다.

신축 전자패키지 배선용 금속박막의 신축변형-저항 특성 II. Au, Pt 및 Cu 박막의 특성 비교 (Stretchable Deformation-Resistance Characteristics of Metal Thin Films for Stretchable Interconnect Applications II. Characteristics Comparison for Au, Pt, and Cu Thin Films)

  • 박동현;오태성
    • 마이크로전자및패키징학회지
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    • 제24권3호
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    • pp.19-26
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    • 2017
  • Polydimethylsiloxane (PDMS) 기판과 금속박막 사이의 중간층으로 parylene F를 사용한 신축패키지 구조에서 Au, Pt, Cu 박막의 신축변형에 따른 저항변화를 분석하였다. Parylene F 중간층을 코팅한 PDMS 기판에 스퍼터링한 150 nm 두께의 Au 박막과 Pt 박막은 각기 $1.56{\Omega}$$5.53{\Omega}$의 초기저항을 나타내었으며, 30% 인장변형률에서 각 박막의 저항증가비 ${\Delta}R/R_o$은 각기 7 및 18로 측정되었다. Cu 박막은 $18.71{\Omega}$의 높은 초기저항을 나타내었으며 인장변형에 따라 저항이 급격히 증가하다 5% 인장변형률에서 open 되어, Au 박막과 Pt 박막에 비해 매우 열등한 신축 특성을 나타내었다.

Effusion Cell 방식에 의한 <111> 결정구조의 Au 박막의 제작 (Au Thin Film Fabrication of <111> Crystal Structure by Effusion Cell Process)

  • 표경수;김강대;김용규;송정근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.383-386
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    • 2004
  • The one of important requisites for fabricating molecular electronic device is the single crystal direction of bottom substrate nowadays. [1,2]. We obtain the optimum SAM result when the Au crystal is <111> structure for Self-Assembled molecular. To get the <111> crystal Au, we generally repeat heating and cooling course after evaporating Au [3]. However, we can fabricate <111> crystal Av thin film except post treatment because we simultaneously evaporate and anneal using Effusion Cell. In this paper, we study on thin film growth of <111> crystal Au as bottom electrode which is essential for Self-Assembled molecular by Effusion Cell and analyze crystal structure, thickness, surface conductivity and so on as each process condition.

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비시안 무전해 Au 도금의 석출거동에 미치는 하지층 무전해 Ni-P 도금 조건의 영향 (Effect of underlayer electroless Ni-P plating on deposition behavior of cyanide-free electroless Au plating)

  • 김동현;한재호
    • 한국표면공학회지
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    • 제55권5호
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    • pp.299-307
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    • 2022
  • Gold plating is used as a coating of connector in printed circuit boards, ceramic integrated circuit packages, semiconductor devices and so on, because the film has excellent electric conductivity, solderability and chemical properties such as durability to acid and other chemicals. In most cases, internal connection between device and package and external terminals for connecting packaging and printed circuit board are electroless Ni-P plating followed by immersion Au plating (ENIG) to ensure connection reliability. The deposition behavior and film properties of electroless Au plating are affected by P content, grain size and mixed impurity components in the electroless Ni-P alloy film used as the underlayer plating. In this study, the correlation between electroless nickel plating used as a underlayer layer and cyanide-free electroless Au plating using thiomalic acid as a complexing agent and aminoethanethiol as a reducing agent was investigated.

산화아연 나노구조 박막의 일산화탄소 가스 감지 특성 (CO Gas Sensing Characteristics of Nanostructured ZnO Thin Films)

  • 웬래훙;김효진;김도진
    • 한국재료학회지
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    • 제20권5호
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    • pp.235-240
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    • 2010
  • We investigated the carbon monoxide (CO) gas-sensing properties of nanostructured Al-doped zinc oxide thin films deposited on self-assembled Au nanodots (ZnO/Au thin films). The Al-doped ZnO thin film was deposited onto the structure by rf sputtering, resulting in a gas-sensing element comprising a ZnO-based active layer with an embedded Pt/Ti electrode covered by the self-assembled Au nanodots. Prior to the growth of the active ZnO layer, the Au nanodots were formed via annealing a thin Au layer with a thickness of 2 nm at a moderate temperature of $500^{\circ}C$. It was found that the ZnO/Au nanostructured thin film gas sensors showed a high maximum sensitivity to CO gas at $250^{\circ}C$ and a low CO detection limit of 5 ppm in dry air. Furthermore, the ZnO/Au thin film CO gas sensors exhibited fast response and recovery behaviors. The observed excellent CO gas-sensing properties of the nanostructured ZnO/Au thin films can be ascribed to the Au nanodots, acting as both a nucleation layer for the formation of the ZnO nanostructure and a catalyst in the CO surface reaction. These results suggest that the ZnO thin films deposited on self-assembled Au nanodots are promising for practical high-performance CO gas sensors.

고감도 단금속 및 쌍금속 표면 플라즈몬 공명 센서 설계를 위한 수치해석 연구 (Numerical Investigation on Surface Plasmon Resonance Sensor Design with High Sensitivity Using Single and Bimetallic Film Structures)

  • 권혁록;이성혁
    • 전기학회논문지
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    • 제58권4호
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    • pp.795-800
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    • 2009
  • Surface plasmon resonance (SPR) has been widely used for biological and chemical sensing applications. The present study investigates numerically the optical characteristics for the single Au film and bimetallic Ag/Au film SPR configurations by using the multiple beam interference matrix (MBIM) method. We use the prism coupling method, especially Kretschmann configuration for excitation of surface plasmon wave (SPW). The estimated results of reflectance, phase shift and magnetic field intensity enhancement factor are provided for finding out the optimum configuration with high sensitivity for SPR measurement. As a result, the optimum thicknesses are found to be 52 nm for a single Au film and 5 nm to 36 nm for bimetallic Ag-Au film. From the comparison of full width half maximum (FWHM) values for reflectance, phase shift, and enhancement of magnetic field intensity, it is concluded that the highest sensitivity can be obtained when using the phase shift for SPR sensor.