• Journal of the Korean Society of Clothing and Textiles
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• v.37 no.6
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• pp.764-771
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• 2013

The metal component of Chinese and Korean traditional gold thread was analyzed nondestructively using P-XRF and classified morphologically. In the nondestructive analysis of 22 Chinese and Korean artifacts, there were 10 gold threads made up of Au in China and 7 in Korea; in addition, there were 4 silver threads made up of Ag in Korea and 1 copper thread made up of Cu in China. In the morphological classification, 7 gilt paper strips were confirmed in China and Korea and 4 wrapped threads were identified in China and Korea. Zn, Sn and Fe (minor components of the threads) were detected. These components were assumed to be transferred from the metal found in burial goods.

• Tribology and Lubricants
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• v.28 no.4
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• pp.173-177
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• 2012

We used contact resonance force microscopy (CRFM) technique to determine the quantitative elastic properties of multiple materials integrated on the sub micrometer scale. The CRFM approach measures the frequencies of an AFM cantilever's first two flexural resonances while in contact with a material. The plain strain modulus of an unknown or test material can be obtained by comparing the resonant spectrum of the test material to that of a reference material. In this study we examined the following bumping materials for flip chip by using copper electrode as a reference material: NiP, Solder (Sn-Au-Cu alloy) and under filled epoxy. Data were analyzed by conventional beam dynamics and contact dynamics. The results showed a good agreement (~15% difference) with corresponding values determined by nanoindentaion. These results provide insight into the use of CRFM methods to attain reliable and accurate measurements of elastic properties of materials on the nanoscale.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.300-305
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• 2018

The uncooled microbolometer thermal sensor for low cost and mass volume was designed to target the new infrared market that includes smart device, automotive, energy management, and so on. The microbolometer sensor features 80x60 pixels low-resolution format and enables the use of wafer-level vacuum packaging (WLVP) technology. Read-out IC (ROIC) implements infrared signal detection and offset correction for fixed pattern noise (FPN) using an internal digital to analog convertor (DAC) value control function. A reliable WLVP thermal sensor was obtained with the design of lid wafer, the formation of Au80%wtSn20% eutectic solder, outgassing control and wafer to wafer bonding condition. The measurement of thermal conductance enables us to inspect the internal atmosphere condition of WLVP microbolometer sensor. The difference between the measurement value and design one is $3.6{\times}10-9$ [W/K] which indicates that thermal loss is mainly on account of floating legs. The mean time to failure (MTTF) of a WLVP thermal sensor is estimated to be about 10.2 years with a confidence level of 95 %. Reliability tests such as high temperature/low temperature, bump, vibration, etc. were also conducted. Devices were found to work properly after accelerated stress tests. A thermal camera with visible camera was developed. The thermal camera is available for non-contact temperature measurement providing an image that merged the thermal image and the visible image.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.439-449
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• 2002

This paper reviews our recent research works on the interconnection technologies in electronic packaging and assembly. At the aspect of advanced joining methods, laser-ultrasonic fluxless soldering technology was proposed. The characteristic of this technology is that the oxide film was removed through the vibration excitated by high frequency laser change in the molten solder droplet. Application researches of laser soldering technology on solder bumping of BGA packages were carried out. Furthermore, interfacial reaction between SnPb eutectic solder and Au/Ni/Cu pad during laser reflow was analyzed. At the aspect of soldered joints' reliability, the system for predicting and analyzing SMT solder joint shape and reliability(PSAR) has been designed. Optimization design method of soldered joints' structure was brought forward after the investigation of fatigue failure of RC chip devices and BGA packages under temperature cyclic conditions with FEM analysis and experimental study. At the aspect of solder alloy design, alloy design method based on quantum was proposed. The macroproperties such as melting point, wettability and strength were described by the electron parameters. In this way, a great deal of the experimental investigations was replaced, so as to realize the design and research of any kinds of solder alloys with low cost and high efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.430.1-430.1
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• 2014

According to advanced nanotechnology in the field of biomedical engineering, many studies of the interaction between topography of surfaces and cellular responses have been focused on nanostructure. In order to investigate this interaction, it is essential to make well-controlled nanostructures. Electron beam lithography (EBL) have been considered the most typical processes to fabricate and control nano-scale patterns. In this work, $TiO_2$ nanowire array was fabricated with hybrid process (top-down and bottom-up processes). Nanodot arrays were patterned on the substrate by EBL process (top-down). In order to control the spacing between nanodots, we optimized the EBL process using Poly(methyl methacrylate) (PMMA) as an electron beam resist. Metal lift-off was used to transfer the spacing-controlled nanodots as a seed pattern of $TiO_2$ nanowire array. Au or Sn nanodots which play an important role for catalyst using Vapor-Liquid-Solid (VLS) method were patterned on the substrate through the lift-off process. Then, the sample was placed in the tube furnace and heated at the synthesis temperature. After heat treatment, $TiO_2$ nanowire array was fabricated from the nanodots through VLS method (bottom-up). These results of spacing-controlled nanowire arrays will be used to study the interaction between nanostructures and cellular responses in our next steps.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.303-304
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• 2005

In this paper, we report a fluxless eutectic die bonding process which uses 80Au-20Sn eutectic alloy. The chip LEDs are picked and placed on silicon substrate wafers. The bonding process temperatures and force are $305\sim345^{\circ}C$ and 10$\sim$100gf, respectively. The bonding process was performed on graphite heater with nitrogen atmosphere. The quality of bonding are evaluated by shear test and thermal resistance. Results of fluxless eutectic die bonding show that shear strength is Max. 3.85kgf at 345$^{\circ}C$ /100gf and thermal resistance of junction to die bonding is Min. 3.09K/W at 325$^{\circ}C$/100gf.

• Progress in Superconductivity
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• v.9 no.2
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• pp.162-166
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• 2008

We are developing a sensitive gamma ray spectrometer based on superconducting transition edge sensors. The detector consists of a small piece of high purity Sn as an absorber and a Ti/Au bilayer as a temperature sensor. It is designed to measure the thermal signal caused by absorption of gamma rays. The mechanical support and the thermal contact between the absorber and the thermometer were made with Stycast epoxy. The bilayer was formed by e-beam evaporation and patterned by wet etching on top of a $SiN_X$ membrane. A sharp superconducting transition of the film was measured near 100 mK. When the film was biased to the edge of the transition, signals were observed due to single photon absorption emitted from an $^{241}Am$ source. The measured spectrum showed several characteristic peaks of the source including 59.5 keV gamma line. The full with at half maximum was about 900 eV for the 59.5 keV gamma line. The background was low enough to resolve low energy lines. Considerations to improve the energy resolution of the gamma ray spectrometer are also discussed.

• Journal of the Mineralogical Society of Korea
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• v.24 no.3
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• pp.245-252
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• 2011

콜롬비아는 안데스 산맥의 북단에 위치하며 NS 방향의 단층대를 기준으로 지질 환경의 차이가 크다. 단층대를 기준으로 동부지역은 원생대 변성암류와 이를 피복하는 고생대 변성퇴적암류가 주로 분포하며, 서부 지역은 고생대 퇴적암류, 중생대 화성암류, 제 3 기 화산양류 및 퇴적암류가 주로 분포한다. 지화학이상대는 6개 그룹으로 분류되며, 철 (Fe), 귀금속(Au, Ag, Pt), 기초금속(Cu, Pb, Zn), 희유금속(Sn, Cr, Co, Mn, Mo, Ni, Nb, W, V, Mg, Ti, Be, REE, Ga, Zr, Hf, Se, Te, Ta, Cd, In, Li 등) 빛 핵원료자원인 U 이상대로 구성된다. 콜롬비아의 주요 부존자원은 석탄, 니켈, 금 및 에메랄드이다. 에메랄드, 석탄 및 니켈은 세계적인 매장규모와 생산량을 보인다. 콜롬비아는 탐사가 거의 수행되지 않은 지역이 전 국토의 49%에 달해 광물부존 잠재성은 현재보다 크게 높을 것으로 보인다. 따라서 최근 콜롬비아와의 광물자원 협력이 강화되고 있는 시점에서 미탐사 지역을 대상한 공동탐사를 지화학 이상대가 확인된 지역을 중심으로 수행하여 신규광체를 확보하고, 광물자원 협력을 강화함으로써 공동개발 여건을 마련할 필요가 있다고 판단된다.

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.54-60
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• 2005

Recently a lots of problems have observed in high densified and high integrated electronic components. One of them is ion migration phenomena, which induce the electrical short of electrical circuit. ion migration phenomena has been observed in the field of exposing the specific environment and using for a long tin e. This study was evaluated the generation time of ion migration and was investigated properly test method through water drop test and high temperature high humidity test. Also we observed direct causes and confirmed generation mechanism of dendritic growth as we reproduced the ion migration phenomena. We utilized PCB(printed circuit board) having a comb pattern as follows 0.5, 1.0, 2.0 mm pattern distance. Cu, SnPb and Au were electroplated on the comb pattern. 6.5 V and 15 V were applied in the comb pattern and then we measured the electrical short time causing by ion migration. In these results, we examined a difference of ion migration time depending on pattern materials, applied voltage and pattern spacing of PCB conductor.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.9-15
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• 2018

This paper shows the principles and characteristics of the transient liquid phase (TLP) bonding technology for power modules packaging. The power module is semiconductor parts that change and manage power entering electronic devices, and demand is increasing due to the advent of the fourth industrial revolution. Higher operation temperatures and increasing current density are important for the performance of power modules. Conventional power modules using Si chip have reached the limit of theoretical performance development. In addition, their efficiency is reduced at high temperature because of the low properties of Si. Therefore, Si is changed to silicon carbide (SiC) and gallium nitride (GaN). Various methods of bonding have been studied, like Ag sintering and Sn-Au solder, to keep up with the development of chips, one of which is TLP bonding. TLP bonding has the advantages in price and junction temperature over other technologies. In this paper, TLP bonding using various materials and methods is introduced. In addition, new TLP technologies that are combined with other technologies such as metal powder mixing and ultrasonic technology are also reviewed.