• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.51-56
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• 2014

The reliability of solder joint is significantly affected by the property of surface finish. This paper reports on a study of high speed shear energy and failure mode for Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder joints with the time of Pd activation. The nodule size of electroless Ni-P deposit increased with increasing the time of Pd activation. The roughness (Ra) of electroless Ni-P deposit decreased with increasing the time of Pd activation. Then, with $HNO_3$ vapor, the quasi-brittle and brittle mode of SAC405 solder joint decreased with increasing the time of Pd activation. This results indicate that the increase in the Pd activation time for Electroless Ni/ Electroless Pd/ Immersion Au (ENEPIG) surface finish play a critical role for improving the robustness of SAC405 solder joint.

• Economic and Environmental Geology
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• v.54 no.2
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• pp.213-232
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• 2021

Ore criteria at the Sheba Deposit indicate orogenic mineralization type. Rocks and mineral assemblages suggest low formation-temperature of green-schist facies. Pyrite found in two generations; Type1 is irregular grains, contains higher arsenic and gold contents, compared to the relatively younger phase Type2 pyrite, which is composed of euhedral grains, found adjacent to late quartz-carbonate veins or at rims of type1 pyrite. Two gold generations were identified; type1 found included in sulphides (mainly pyrite). The second gold type was remobilized (secondary) into free-lodes within silicates (mainly quartz). Gold fineness is high, as gold contains up to 95 wt. % Au, Ag up to 3.5 wt. %, and traces of Cu, Ni, and Fe. Pyrite type2 contains tiny mineral domains (rich in Al, Mn, Hg, Se, Ti, V, and Cr). Zoning, and replacement textures are common, suggesting multiple mineralization stages. The distribution and relationships of trace elements in pyrite type2 indicate three formation patterns: (1) Al, Mn, Hg, Se, Ti, V, Cr, and Sn are homogeneously distributed in pyrite, reflecting a synchronous formation. (2) As, Ni, Co, Zn, and Sb display heterogeneous distribution pattern in pyrite, which may indicate post-formation existence due to other activities. (3) Au and Ag show both distribution patterns within pyrite, suggesting that gold is found both in microscopic phases and as chemically bounded phase.

• Journal of Welding and Joining
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• v.30 no.5
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• pp.64-69
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• 2012

Sn-Bi eutectic alloy has been widely used as one of the key solder materials for step soldering at low temperature. The Sn-58Bi solder paste containing chloride flux was adopted to compare with that using the chloride-free flux. The paste was applied on the electroless nickel-immersion gold (ENIG) surface finish by stencil printing, and the reflow process was then performed at $170^{\circ}C$ for 10 min. After reflow, the solder joints were aged at $125^{\circ}C$ for 100, 200, 300, 500 and 1000 h in an oven. The interfacial microstructures were obtained by using scanning electron microscopy (SEM), and the composition of intermetallic compounds (IMCs) was analyzed using energy dispersive spectrometer (EDS). Two different IMC layers, consisting of $Ni_3Sn_4$ and relatively very thin Sn-Bi-Ni-Au were formed at the solder/surface finish interface, and their thickness increased with increasing aging time. The wettability of solder joints was investigated by wetting balance test. The mechanical property of each aging solder joint was evaluated by the ball shear test in accordance with JEDEC standard (JESD22-B117A). The results show that the highest shear force was measured when the aging time was 100 h, and the fracture mode changed from ductile fracture to brittle fracture with increasing aging time. On the other hand, the chloride flux in the solder paste did not affect the shear force and fracture mode of the solder joints.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.49-53
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• 2011

High-speed Cu filling into a through-silicon-via (TSV) and simplification of bumping process by electroplating for three dimensional stacking of Si dice were investigated. The TSV was prepared on a Si wafer by deep reactive ion etching, and $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to increase the filling rate of Cu into the via, a periodic-pulse-reverse wave current was applied to the Si chip during electroplating. In the bumping process, Sn-3.5Ag bumping was performed on the Cu plugs without lithography process. After electroplating, the cross sections of the vias and appearance of the bumps were observed by using a field emission scanning electron microscope. As a result, voids in the Cu-plugs were produced by via blocking around via opening and at the middle of the via when the vias were plated for 60 min at -9.66 $mA/cm^2$ and -7.71 $mA/cm^2$, respectively. The Cu plug with a void or a defect led to the production of imperfect Sn-Ag bump which was formed on the Cu-plug.

• Proceedings of the Korean Reliability Society Conference
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• 2004.07a
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• pp.147-151
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• 2004

In this study, an optical fiber assembly directly coupled with a laser diode or a photo diode is designed to confirm high reliable optical coupling efficiency of optical transmitter(Tx) and receiver(Rx). The optical fiber assembly is fabricated by soldering an optical fiber and a Kovar ferrule using a glass solder after inserting an optical fiber through a Kovar ferrule. The Kovar which has good welding characteristics is applied to introduce laser welding technique. The glass solder has excellent thermal characteristics such as thermal shift delamination compared with PbSn, AuSn solder previously used usually. Furthermore, the glass solder doesn't need fiber metalization and this enables low cost fabrication. However, the glass soldering is high temperature process over 35$0^{\circ}C$ and the convex shape after solidification due to surface tension causes the stress concentration on optical fiber. The stress concentration on the optical fiber increases the optical insertion loss and possibility of crack formation. The shape of glass solder was designed referring to 2-D Axi-symmetric FEM simulation. To test the mechanical reliability, mechanical vibration test and shock test were done according to Telcorida GR-468-Core protocol. After each test, the optical loss of the stress distributed fiber assembly didn't exceed 0.5 dB, which passes the test.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.54.1-54.1
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• 2010

산화물 기반의 TFT는 유리, 금속, 플라스틱 등 기판 종류에 상관없이 균일한 제작이 가능하며, 상온 및 저온에서 대면적으로 제작이 가능하고, 저렴한 비용으로 제작 가능하다는 장점 때문에 최근 많은 연구가 이루어지고 있다. 현재 TFT 물질로 많이 연구되고 있는 산화물은 ZnO (3.4 eV)나 InOx (3.6 eV), GaOx (4.9 eV), SnOx(3.7 eV)등의 물질과 각각의 조합으로 구성된 재료들이 주로 사용되고 있으며, 가장 많은 연구가 이루어진 ZnO 기반의 TFT는 mobility와 switching 속도에서 우수한 특성을 보이나, 트렌지스터의 안정성이 떨어지는 것으로 보고 되고 있다. 그러나 IGZO 물질의 경우 결정학적으로 비정질이며 상온 및 저온에서 대면적으로 제작이 가능하고, 높은 전자 이동도의 특성을 가지고 있는 장점 때문에 최근 차세대 산화물 트렌지스터로 각광받고 있다. IGZO TFT 소자의 경우 Ag, Au, In, Pt, Ti, ITO 등 다양한 전극 물질이 사용되고 있는데, 이들 중 active channel과 ohmic contact을 이루는 Al, Ti, Ag의 적용을 통해 향상된 성능을 얻을 수 있다. 하지만 이들 전극 재료는 TFT 소자 제작시 필수적인 열처리 공정에 노출되면서 active channel 과 전극 사이 계면에 문제점을 야기할 수 있다. 특히, Ti의 경우 산화가 잘되기 때문에 전극계면에 TiO2를 형성하여 contact resistance의 큰 영향을 미치는 것으로 보고 되고 있다. 본 연구에서는 ohmic 전극재료인 Ti 또는 Ti/Au를 적용하여 TFT 소자 제작 및 특성에 대한 평가를 진행했으며, 열처리에 따른 전극과 IGZO 계면 사이의 미세구조와 전기적인 특성간의 상관관계를 연구하였다. 이를 통해, 소자 제작 공정을 최적화하고 신뢰성 있는 소자 특성을 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.72-72
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• 2011

Recently, Zinc oxide (ZnO) nano-structures have been received attractive attention because of their outstanding optical and electrical properties. It might be a promising material considered for applications to photonic and electronic devices such as ultraviolet light emitting diode, thin film transistor, and gas sensors. ZnO nano-structures can be typically synthesized by the VLS growth mode and self-assembly. In the VLS growth mode using various growth techniques, the noble metal catalysts such as Au and Sn were used. However, the growth of ZnO nano-structures on nano-crystalline Au seeds using radio frequency (RF) magnetron sputtering might be explained by the profile coating, i.e. the ZnO nano-structures were a morphological replica of Au seeds. Ga doped ZnO (ZnO:Ga) nano-structures using this concept were synthesized and characterized by XRD, AFM, SEM, and TEM. We found that surface morphology is drastically changed from initial islands to later sun-flower typed nano-structures. We will present the structural evolution of ZnO:Ga nano-structures with increasing the film thickness.

• Korean Journal of Dental Materials
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• v.42 no.2
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• pp.95-106
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• 2015

Hardening mechanism associated with post-firing heat treatment of softening heat treated and then firing simulated Pd-Ag-Au alloy for bonding porcelain was examined by observing the change in hardness, crystal structure and microstructure. By post-firing heat treatment of as-cast, solution treated and pre-firing heat treated specimens at $650^{\circ}C$ after casting, the hardness value increased within 10 minutes. Then, hardness consistently increased until 30 minutes, and gap of hardness value among the specimens was reduced. The increase in hardness after post-firing heat treatment was caused by grain interior precipitation in the matrix. The softening heat treatment did not affect the increase in hardness by post-firing heat treatment. The precipitated phase from the parent Pd-Ag-Au-rich ${\alpha}$ phase with face-centered cubic structure by post-firing heat treatment was $Pd_3$(Sn, In) phase with face-centered tetragonal structure, which has lattice parameters of $a_{200}=4.0907{\AA}$, $c_{002}=3.745{\AA}$. From above results, appropriate post-firing heat treatment in order to support the hardness of Pd-Ag-Au metal substructure was expected to bring positive effects to durability of the prosthesis.

• Korean Journal of Metals and Materials
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• v.47 no.9
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• pp.580-585
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• 2009

The effects of shear speed and tip height on the high speed shear test of Sn-3.0wt.%Ag-0.5wt.%Cu ball joints were investigated. Solder balls of $450{\mu}m$ in diameter were reflowed at $245^{\circ}C$ on a FR4 PCB (Printed Circuit Board) in order to obtain a sample for the high-speed shear test. The UBM was comprised of Cu/Ni/Au, and the shear speed and tip height varied from 0.5 to 3.0 m/s, and from 10 to $135{\mu}m$, respectively. According to the experimental results, faster shear speed enhanced the shear strength of the solder joints, regardless of the tip height. The fraction of ductile (solder) fracture decreased when the shearing speed was raised from 0.5 to 3.0 m/s. With an increasing tip height from 10 to 50 and $135{\mu}m$, the fracture mode changed from pad lift to mixed (ductile and brittle) and ductile fracture, respectively, while the shearing energy also increased in the same order. The shear energy had a proportional relationship with the fraction of the solder fracture.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.793-796
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• 2005

In this paper, we propose a method which can improve uniformity of a miniaturized electron beam array for inspection of very small pattern with high speed using vertical interconnection. This method enables the individual control of columns so that it can reduce the deviation of beam current, beam size, scan range and so on. The test device that used vertical interconnection method was fabricated by multiple wafer bonding and metal reflow. Two silicon and one glass wafers were bonded and metal interconnection by melting of electroplated AuSn was performed. The contact resistance was under $10{\Omega}$.