• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.110-113
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• 2003

여러가지 Sn-Ag-Cu 솔더조성과 솔더링 후의 냉각속도에 따라 솔더링 접합부에서의 계면 미세조직의 다양한 변화를 관찰해 보았다. 현재까지 Sn-Ag-Cu 3원계 공정점에 대한 정확한 연구가 미흡하고, 상용으로 제품화되고 있는 Sn-Ag-Cu 합금계는 3원계 공정조성에서 약간 벗어난 조성들을 선택하고 있다고 할 수 있다. 따라서, 본 연구에서 사용한 Sn-Ag-Cu 합금 조성은 Sn-3.5Ag, Sn-3Ag-0.7Cu, Sn-3Ag-1.5Cu, Sn-3.7Ag-0.9Cu, Sn-6Ag-0.5Cu로 선택하였으며, 각 조성에서 Lap Shear Joint를 제조하였다. 사용한 Solder pad는 Cu pad와 Cu pad 위에 Au/Ni를 plating한 것을 이용하였다. 리플로우 솔더링 조건은 $250^{\circ}C$ 이상의 온도에서 60초 실시하였으며, 리플로우 솔더링 후의 냉각속도를 달리하여 냉각시켰다. 솔더링 후의 냉각속도가 느려질수록 계면 금속간화합물(IMC)의 두께가 더욱 증가하며, 조대화되었다. 또한 솔더 조성의 영향에서 Cu와 Ag의 함량이 높을수록 계면 IMC의 두께가 증가되었으며, 이는 솔더내부에 형성된 IMC 입자들이 조대화되어 계면 IMC층에 결합되어 나타났기 때문이다.

• The Journal of Korean Academy of Prosthodontics
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• v.21 no.1
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• pp.9-26
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• 1983

In order to investigate the biocompatibility of silver-palladium alloys, gingival fibroblast was obtained from a healthy human gingival and cultured in MEM medium with the addition of silverpalladium alloys. Four different mixture of silver-palladium alloys comprising of Ag-Pd-Au, Ag-Pd-In and Ag-Sn were tested. Results were assessed by calculating the cell multiplication rate per millimeter of medium and morphological changes in cells were also observed and noted.The obtained results were as follows; 1. Ag-Pd-Au alloy was indicated to be most biocompatible with gingival fibroblast. Also there was a decrease in cytotoxicity of the alloy as the concentration of gold increased. 2. Ag-Pd alloy showed a decrease in cell multiplication rate as compared to Ag-Pd~Au alloy. 3. Silver-palladium alloy supplemented with Indium increased the cell multiplication rate. 4. Among the alloys tested, Ag-Sn alloy was indicated to be the most cytotoxic and the least biocompatible with human gingival fibroblast.

• Journal of Sensor Science and Technology
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• v.20 no.1
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• pp.58-63
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• 2011

A low loss radio frequency(RF) micro electro mechanical systems(MEMS) switch driven by a low actuation voltage was designed for the development of a new RF MEMS switch. The RF MEMS switch should be encapsulated. The glass cap and fabricated RF MEMS switch were assembled by the Au/Sn eutectic bonding principle for wafer-level packaging. The through-vias on the glass substrate was made by the glass dry etching and Au electroplating process. The packaged RF MEMS switch had an actuation voltage of 12.5 V, an insertion loss below 0.25 dB, a return loss above 16.6 dB, and an isolation value above 41.4 dB at 6 GHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.371.2-371.2
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• 2014

가스 센서분야에서 특정 가스종에 대한 선택성과 감응도 향상을 위해 금속 촉매 등을 센서 물질 표면이나 내부 등에 형성시키는 방안이 많이 연구되고 있다. 1차원 구조 반도성 물질인 나노섬유 내에 금속 촉매를 형성시켜 특정 가스에 대한 선택성과 감응도를 향상시키는 연구가 보고된 바 있다. 선행연구에 의하면 Au와 Pt입자가 형성된 나노섬유의 경우, 각각 CO와 toluene가스에 대하여 선택적인 감응을 나타내는 것으로 확인되었다. 본 연구에서는 전기방사법과 광환원법을 동시에 이용하여 Au와 Pt 입자가 포함된 $SnO_2$ 나노섬유를 합성하고, 이들 나노섬유의 가스감응 특성을 연구하였다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.183-188
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• 2002

With the contact pad consisted of $0.5{\mu}{\textrm}{m}$ $Au/5{\mu}{\textrm}{m}$ Ni/Cu layers on a conventional ball grid array(BGA) substrate, metallurgical reaction properties between the pad and In-15(wt.%)Pb-5Ag solder alloy were studied after reflow and solid aging. In as-reflow condition, thin AuIn$_2$or Ni$_{28}$In$_{72}$ intermetallic layer was formed at the solder/pad interface according to reflow time. Dissolution of the Au layer into the molten solder was remarkably limited in comparison with eutectic Sn-37Pb alloy. After solid aging of 300 hrs, thickness of In-Ni layer increased to about $2{\mu}{\textrm}{m}$ in the both as-reflow case. It was observed that In atoms diffuse through the AuIn$_2$phase to react with underlaying Ni layer. The metallurgical reaction properties between In-l5Pb-7Ag alloy and Au/Ni surface finish were analysed to result in suppression of Au-embrittlement in the solder joints.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.25-27
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• 2005

Sn-9Zn solder balls were bonded to Cu and ENIG (Electroless Nickel/Immersion Gold) pads, and the effect of aging on their joint reliability was investigated. The interfacial products were different from the general reaction layer formed in a Sn-base solder. The intermetallic compounds formed in the solder/Cu joint were $Cu_{5}Zn_{8}$ and $Cu_{6}Sn_{5}$. After aging treatment, voids formed irregularly at the bottom side of the solder because of Sn diffusion into the $Cu_{5}Zn_{8}$ IMC. In the case of the solder/ENIG joint, $AuZn_{3}$ IMCs were formed at the interface. In the case of the Sn-9Zn/ENIG, the shear strength remained nearly constant in spite of aging for 1000 hours at $150^{\circ}C$. On the other hand, in the case of the Sn-9Zn/Cu, the shear strength significantly decreased after aging at $150^{\circ}C$ for 100hours and then remained constant by further prolonged aging. Therefore, the protective plating layer such as ENIG must be used to ensure the mechanical reliability of the Sn-9Zn/Cu joint.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.331-338
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• 2005

The rapid advances in high power light sources and arrays as encountered in incandescent lamps have induced dramatic increases in die heat flux and power consumption at all levels of high power LED packaging. The lifetime of such devices and device arrays is determined by their temperature and thermal transients controlled by the powering and cooling, because they are usually operated under rough environmental conditions. The reliability of packaged electronics strongly depends on the die attach quality, because any void or a small delamination may cause instant temperature increase in the die, leading sooner or later to failure in the operation. Die attach materials have a key role in the thermal management of high power LED packages by providing the low thermal resistance between the heat generating LED chips and the heat dissipating heat slug. In this paper, thermal transient characteristics of die attach in high power LED package have been studied based on the thermal transient analysis using the evaluation of the structure function of the heat flow path. With high power LED packages fabricated by die attach materials such as Ag paste, solder paste and Au/Sn eutectic bonding, we have demonstrated characteristics such as cross-section analysis, shear test and visual inspection after shear test of die attach and how to detect die attach failures and to measure thermal resistance values of die attach in high power LED package. From the structure function oi the thermal transient characteristics, we could know the result that die attach quality of Au/Sn eutectic bonding presented the thermal resistance of about 3.5K/W. It was much better than those of Ag paste and solder paste presented the thermal resistance of about 11.5${\~}$14.2K/W and 4.4${\~}$4.6K/W, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.81-88
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• 2019

In this study, the effects of graphene oxide (GO) addition on electromigration (EM) lifetime of Sn-3.0Ag-0.5Cu Pb-free solder joint between a ball grid array (BGA) package and printed circuit board (PCB) were investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of package side finished with electroplated Ni/Au, while $Cu_6Sn_5$ IMC was formed at the interface of OSP-treated PCB side. Mean time to failure of solder joint without GO solder joint under $130^{\circ}C$ with a current density of $1.0{\times}10^3A/cm^2$ was 189.9 hrs and that with GO was 367.1 hrs. EM open failure was occurred at the interface of PCB side with smaller pad diameter than that of package side due to Cu consumption by electrons flow. Meanwhile, we observed that the added GO was distributed at the interface between $Cu_6Sn_5$ IMC and solder. Therefore, we assumed that EM reliability of solder joint with GO was superior to that of without GO by suppressing the Cu diffusion at current crowding regions.

• Proceedings of the KWS Conference
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• 2005.11a
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• pp.225-227
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• 2005

Sn-8wt%Zn-3wt%Bi (이하, Sn-8Zn-3Bi) 솔더의 장기 신뢰성을 평가하기 위하여 열 충격 시험을 행하였다. 열 충격 시험은 $-40^{\circ}C$에서 $80^{\circ}C$범위에서 1000 사이클 동안 하였다. 접합 기판으로는 각각 OSP(Organic Solderability Preservative), Sn 그리고 Ni/Au 처리를 한 PCB(Printed Circuit Board) 패드를 사용하였다. 접합에 사용한 부품은 1608 Chip(Multi Layer Chip Capacitor, Chip Resistor) 으로 전극 부위에 Sn-37wt%Pb, Sn 도금하여 사용하였다. 솔더링 후 1608 Chip의 전단 강도와 솔더링부에서 미세조직 및 IMC(Inter Metallic Compound) 변화를 관찰하였다. 측정결과, Sn-8Zn-3Bi 솔더의 초기 전단 강도는 기판의 표면처리에 상관없이 약 40N 이상이었다. 그리고 열충격 시험 1000 사이클 후에는 모든 기판에서 2N 정도 약간의 강도 저하를 보였다.

• Journal of Welding and Joining
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• v.23 no.3
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• pp.61-67
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• 2005

Since lead (Pb)-free solders for electronics have higher melting points than that of eutectic Sn-Pb solder, they need higher soldering temperatures. In order to decrease the soldering temperature we tried to coat Sn-Bi layer on $Sn-3.5\%Ag$ solder by electroplating, which applies the mechanism of transient liquid phase bonding to soldering. During heating Bi will diffuse into the $Sn-3.5\%Ag$ solder and this results in decreasing soldering temperature. As bonding samples, the 1608 capacitor electroplated with Sn, and PCB, its surface was finished with electroless-plated Ni/Au, were selected. The $Sn-95.7\%Bi$ coated Sn-3.5Ag was supplied as a solder between the capacitor and PCB land. The samples were reflowed at $220^{\circ}C$, which was lower than that of normal reflow temperature, $240\~250^{\circ}C$, for the Pb-free. As experimental result, the joint of $Sn-95.7\%Bi$ coated Sn-3.5Ag showed high shear strength. In the as-reflowed state, the shear strength of the coated solder showed 58.8N, whereas those of commercial ones were 37.2N (Sn-37Pb), 31.4N (Sn-3Ag-0.5Cu), and 40.2N (Sn-8Zn-3Bi). After thermal shock of 1000 cycles between $-40^{\circ}C$ and $+125^{\circ}C$, shear strength of the coated solder showed 56.8N, whereas the previous commercial solders were in the range of 32.3N and 45.1N. As the microstructures, in the solder $Ag_3Sn$ intermetallic compound (IMC), and along the bonded interface $Ni_3Sn_4$ IMC were observed.