• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.05a
• /
• pp.29.1-29.1
• /
• 2007

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.141-141
• /
• 2013

Shape control of metal nanocrystals has broad applications, including catalysis, plasmonics, and sensing. It was found that controlling the atomic arrangement on metal nanocrystal surfaces affects many properties, including the electronic dipole or work function. Tuning the surface structure of exposed facets of metal nanocrystals was enabled by shape control. We investigated the effect of shape on nanomechanical properties, including friction and adhesion forces. Two nanoparticles systems, high-index {321} and low-index {100}, were used as model nanoparticle surfaces. Scanning force microscopy was used to probe nanoscale friction and adhesion. Because of the abundant presence of high-density atomic steps and kinks, high-index faceted nanoparticles have a higher surface energy than low-index faceted cubic nanoparticles. Due to this high surface energy, high-index faceted particles have shown stronger adhesion and higher friction than low-index nanoparticles. We discuss the results in light of the differences in surface energy as well as the effect of capping layers in the measurement.

• Proceedings of the IEEK Conference
• /
• 2008.06a
• /
• pp.489-490
• /
• 2008

As anodizing method using poly-Si (polycrystalline silicon) grown by LPCVD (Low Pressure Chemical Vapor Deposition), a ballistic electron emitter was made. An OPPS (Oxidized Porous Poly-Si) structure can generate ballistic electron which can pass through without scattering owing to electric field of oxide layer wrapped around nanocrystal due to applied voltage of between surface and bottom electrode. As electrode, (Al, Au and Pt/ti) were used. In this case, there were the better characteristics in Al and Pt/ti than in Al and Au.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.10a
• /
• pp.20.1-20.1
• /
• 2011

The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.

• Journal of the Korean Vacuum Society
• /
• v.10 no.1
• /
• pp.44-50
• /
• 2001

Metal oxide semiconductor (MOS) structures containing nanocrystals are fabricated by using rapid thermal oxidations of amorphous silicon films. The amorphous films are deposited either by electron beam deposition method or by electron beam deposition assisted by Ar ion beam during deposition. Post oxidation of e-beam deposited film results in relatively small hysteresis of capacitance-voltage (C-V) and the flat band voltage shift, $\DeltaV_{FB}$ is less than 1V indicative of the formation of low density nanocrystals in $SiO_2$ near $SiO_2$/Si interface. By contrast, we observe very large hysteresis in C-V characteristics for oxidized ion-beam assisted e-beam deposited sample. The flat band voltage shift is larger than 22V and the hysteresis becomes even broader as increasing injection times of holes at accumulation condition and electrons at inversion condition. The result indicates the formation of slow traps in $SiO_2$ near $SiO_2$/Si interface which might be related to large density nanocrystals. Roughly estimated trap density is $1{\times}10^{13}cm^{-2}$. Such a large hysteresis may be explained in terms of the activation of adatom migration by Ar ion during deposition. The activated migration may increase nucleation rate of Si nuclei in amorphous Si matrix. During post oxidation process, nuclei grow into nanocrystals. Therefore, ion beam assistance during deposition may be very feasible for MOS structure containing nanocrystals with large density which is a basic building block for single electron memory device.