• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.80-83
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• 2000

In this work we deposited Pentacene thin film by OMBD at the various substrate temperatures, deposition rate and the various annealing temperatures for the fabrication of organic TFT and investigated the electrical and film surface characteristics such as sheet resistance, contact resistance and conductance Film thickness were measured by $\alpha$-step and the sheet resistance, contact resistance and conductance were extracted from the relation between the distance of the contacts and the resistance. During the film deposition the substrate temperature was held at 3$0^{\circ}C$, 4$0^{\circ}C$, 5$0^{\circ}C$, 6$0^{\circ}C$, 8$0^{\circ}C$ and 10$0^{\circ}C$, respectively. After the film deposition, Au contact was deposited by thermal evaporation. For the effect of annealing, the thin film was annealed in the nitrogen environment at 10$0^{\circ}C$ and 14$0^{\circ}C$ for 10 seconds, respectively. Film surface characteristics at the vatious substrate temperatures were measured by AFM. The crystallization of thin film was improved as the substrate temperatures were increased and the maximum gram size was 4${\mu}{\textrm}{m}$. The conductivity of thin film was found to be 7.40 $\times$10$^{-7}$ ~ 7.78$\times$10$^{-6}$ S/cm and the minimum contact resistance was 2.5324 ㏁.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.131-137
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• 2013

The thin insulator films for organic memory device were made by the plasma polymerization method using the styrene monomer which was not the wet process but the dry process. For the formation of stable plasma, we make an effort for controlling the monomer with bubbler and circulator system. The thickness of plasma polymerized styrene insulator layer was 430 nm, the thickness of the Au memory layer was 7 nm thickness of plasma polymerized styrene tunneling layer was 30, 60 nm, the thickness of pentacene active layer was 40 nm, the thickness of source and drain electrodes were 50 nm. The I-V characteristics of fabricated memory device got the hysteresis voltage of 45 V at 40/-40 V double sweep measuring conditions. If it compared with the results of previous paper which was the organic memory with the plasma polymerized MMA insulation thin film, this result was greater than 18 V, the improving ratio is 60%. From the paper, styrene indicated a good charge trapping characteristics better than MMA. In the future, we expect to make the organic memory device with plasma polymerized styrene as the memory thin film.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.327-332
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• 2011

Plasma polymerized styrene (ppS) thin films were prepared on ITO coated glass substrates for a MIM (metal-insulator-metal) structure with thermally evaporated Au thin film as metal contact. Also the ppS thin films were applied as organic insulator to a MIS (metal-insulatorsemiconductor) device with thermally evaporated pentacene thin film as organic semiconductor layer. After the I-V and C-V measurements with MIM and MIS structures, the ppS revealed relatively higher dielectric constant of k=3.7 than those of the conventional poly styrene and very low leakage current density of $1{\times}10^{-8}Acm^{-2}$ at electric field strength of $1MVcm^{-1}$. The MIS structure with the ppS dielectric layer showed negligible hysteresis in C-V characteristics. It would be therefore expected that the proposed ppS could be applied as a promising dielectric/insulator to organic thin film transistors, organic memory devices, and flexible organic electronic devices.

• Korean Journal of Optics and Photonics
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• v.9 no.6
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• pp.428-432
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• 1998

We fabricated 1$\times$8 array of GaAs/AlGaAs quantum well infrared photodetectors for the long wavelength infrared detection which is based on the bound-continuum intersubband transition, and characterized its electrical and optical properties. The device was grown on SI-GaAs(100) by the molecular beam epitaxy and consisted of 25 period of 40 ${\AA} $ GaAs well and 500 ${\AA} $ $Al_{0.28} Ga_{0.72}$ As barrier. To reduce the possibility of interface states only the center 20 ${\AA} $ of the well was doped with Si ($N_D=2{\times}10^{18} cm^{-3}$). We etched the sample to make square mesas of 200$\times$200 $\mu\textrm{m}^2$ and made an ohmic contact on each pixel with Au/Ge. Current-voltage characteristics and photoresponse spectrum of each detector reveal that the array was highly uniform and stable. The spectral responsivity and the detectivity $D^＊$ were measured to be 180,260 V/W and $4.9{\times}10^9cm\sqrt{Hz}/W$ respectively at the peak wavelength of $\lambda$ =7.8 $\mu\textrm{m}$ and at T=10 K.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.179-186
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• 2019

In this study, we investigated the structural properties of $Ga_2O_3$ thin films and the photo-electrical properties of metal-semiconductor-metal (MSM) photodetectors deposited by Ti/Au electrodes. $Ga_2O_3$ thin films were grown at different temperatures using metal organic chemical vapor deposition (MOCVD). The crystal phase of $Ga_2O_3$ changed from ${\varepsilon}$-phase to ${\beta}$-phase depending on the growth temperature. The crystal structure of ${\varepsilon}-Ga_2O_3$ was confirmed by X-ray diffraction (XRD) analysis and the formation mechanism of crystal structure was discussed by scanning electron microscopy (SEM) images. From the results of current-voltage (I-V) and time-dependent photoresponse characteristics under the illumination of external lights, we confirmed that the MSM photodetector fabricated by ${\varepsilon}-Ga_2O_3$ showed much better photocurrent characteristics in the 266 nm UV range than in the visible range.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.175-182
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• 2017

In light emitting diode (LED) chip packaging, wire bonding is an important process that connects the LED chip on the lead frame pad with the Au wire and enables electrical operation for the next process. The wire bonding process is divided by two types: thermo compression bonding and ultrasonic bonding. Generally, the wire bonding process consists of three steps: 1st ball bonding that bonds the shape of the ball on the LED chip electrode, looping process that hangs the wire toward another connecting part with a loop shape, and 2nd stitch bonding that forms and bonds to another electrode. This study analyzed the factors affecting the LED die bonding processes to optimize the process capability that bonds a small Zener diode chip on the PLCC (plastic-leaded chip-carrier) LED package frame, and then applied response surface analysis. The design of experiment (DOE) was established considering the five factors, three levels, and four responses by analyzing the factors. As a result, the optimal conditions that meet all the response targets can be derived.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.161-161
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• 2012

본 연구에서는 InGaAs을 이용한 테라헤르쯔(THz) 발생과 검출 특성을 GaAs에 의한 특성과 비교, 조사하였다. 고온성장(HTG, $530^{\circ}C$) InGaAs를 이용하여 photo-Dember (pD) 효과(표면방출)에 의한 THz 발생 특성을 조사하였으며, THz 검출 특성에는 저온성장(LTG, $530^{\circ}C$) InGaAs: Be을 이용하였다. HTG-InGaAs 기판 위에 패턴한 금속전극 (Ti/Au, ${\sim}500{\times}500{\mu}m$)의 가장자리에 Ti: Sapphire fs 펄스 레이저(30 ps/90 MHz)를 조사하여 LTG-GaAs 수신기(Rx)로 THz를 검출, 전류신호(a)와 Fourier transform (FT) 주파수 스펙트럼(b)을 얻었다. HTG-InGaAs에서 얻은 파형은 SI-GaAs에서와 거의 비슷한 모양이었으나, 주파수 범위(0.5~2 THz)는 SI-GaAs의 1~3 THz 보다 좁고 FT 스펙트럼의 세기는 약 1/8 정도로 낮았다. LTG-InGaAs 수신기 (Rx)의 안테나는 쌍극자 ($5/20{\mu}m$) 형태를 가지고 있으며, SI-GaAs Tx로 발생시킨 광원을 사용하여 THz 영역의 검출 특성을 조사하였다. HTG-InGaAs Tx 및 LTG-InGaAs Rx의 이득은 각각 약 $5{\times}10^{-8}$ A/W과 $2.5{\times}10^{-8}$ A/W인 것으로 분석되었다.

• Korean Journal of Materials Research
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• v.21 no.3
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• pp.133-137
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• 2011

Gold have been used as an electrode materials having a good mechanical flexibility as well as electrical conductivity, however the stretchability of the gold on a flexible substrate is poor because of its small elastic modulus. To overcome this mechanical inferiority, the reinforcing gold is necessary for the stretchable electronics. Among the reinforcing materials having a large elastic modulus, carbon nanotube (CNT) is the best candidate due to its good electrical conductivity and nanoscale diameter. Therefore, similarly to ferroconcrete technology, here we demonstrated gold electrodes mechanically reinforced by inserting fabrics of CNTs into their bodies. Flexibility and stretchability of the electrodes were determined for various densities of CNT fabrics. The roles of CNTs in resisting electrical disconnection of gold electrodes from the mechanical stress were confirmed using field emission scanning electron microscope and optical microscope. The best mechanical stability was achieved at a density of CNT fabrics manufactured by 1.5 ml spraying. The concept of the mechanical reinforced metal electrode by CNT is the first trial for the high stretchable conductive materials, and can be applied as electrodes materials in various flexible and stretchable electronic devices such as transistor, diode, sensor and solar cell and so on.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.317-318
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• 2013

Terahertz (THz) wave는 광학 영역과 방송파 영역 사이에 광대역 주파수 스펙트럼을 차지하고 있다. X선과는 달리 비이온화 광원으로 직진성, 투과성, 낮은 에너지 (meV)를 가지고 있어 비파괴적이고 무해한 장점을 지니고 있다. 본 연구에서는 In0.53Ga0.47As:Be/In0.52Al0.48As의 multi quantum well (MQW)을 Semi-insulting InP:Fe substrate 위에 active layer의 두께와 적층을 변화주어서 성장하였고Au (200 nm)/Ti (30 nm)의 금속전극으로 공정을 하였다. Ti:Sapphire femtosecond pulse laser를 조사하여 THz time-domain spectrometer 시스템을 이용하여 광전도검출법으로 THz 검출 특성을 연구하였다. THz 검출은 짧은 전하수명과 높은 저항을 요구한다. LTInGaAs의 경우 AsGa antisite로 인하여 짧은 전하수명을 얻게 되면 n-type의 높은 전하밀도를 가지게 되어서 저항이 낮아지게 된다. 높은 저항을 만들기 위하여 Be doping을 이용하여 과잉의 전자들을 보상하고 InAlAs layer를 삽입시켜 보다 높은 저항을 얻었다. LT-InGaAs:Be는 LT-GaAs보다 1/70 정도의 amplitude를 보이는데 LT-InGaAs/InAlAs MQW의 경우 LT-GaAs 대비 약 3/4 정도의 큰 amplitude를 얻었다. 또 active layer의 두께가 얇고 적층이 많을수록 신호가 커지는 것을 알 수 있었다. 이는 상대적으로 band gap이 큰 InAlAs층이 더 높은 저항을 만든 것으로 사료된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.160-160
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• 2010

In this work, we investigate ohmic contacts to p-type GaN using a Pt/Cu/Au metallization scheme in order to achieve low resistance and thermally stable ohmic contact on p-GaN. An ohmic contact formed by a metal electrode deposited on a highly doped InGaN/GaN superlattice sturucture on p-GaN layer. The specific contact resistance is $1.56{\times}10^{-6}{\Omega}cm^2$ for the as-deposited sample, $1.35{\times}10^{-4}{\Omega}cm^2$ for the sample annealed at $250^{\circ}C$ and $6.88{\times}10^{-3}{\Omega}cm^2$ for the sample annealed at $300^{\circ}C$.