• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.375-384
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• 2004

Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

• Clean Technology
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• v.11 no.2
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• pp.69-74
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• 2005

A metal ion detector with a submicron size electrode was fabricated by field-induced AFM oxidation. The square frame of the mesa pattern was functionalized by APTES for the metal ion detection, and the remaining portion was used as an electrode by the self-assembly of MPTMS for Au metal deposition. The conductance changed with the quantity of adsorbed copper ions, due to electron tunneling between the mobile and surface electrodes. The smaller electrode has a lower limit of detection due to the enhancement in electron tunneling through metal ions that are adsorbed between the conductive-tip (mobile) and the surface (fixed) electrode. This two-electrode system immobilized with different functional groups was successfully used in the selective adsorption and detection of target materials.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.334-340
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• 2000

This paper presents the fabrication of a micro electromagnetic flow sensor for the liquid flow rate measurement. The micro electromagnetic flow sensor has some advantages such as a simple structure, no heat generation, a rapid response and no pressure loss. The principle of the micro electromagnetic flow sensor is based on Faraday's law. If conductive fluid passes through a magnetic field, the electromotive force is generated and detected by two electrodes on the wall of the flow channel. The flow sensor consists of two permanent magnets and a silicon flow channel with two electrodes. The dimension of the flow sensor is $9\;mm\;{\times}\;9\;mm\;{\times}\;1\;mm$. The micro flow channel is mainly fabricated by anisotropic etching of two silicon wafers, and the detection electrodes are fabricated by metal evaporation process. The characteristic of the fabricated flow sensor is obtained experimentally. When the flow rates of water with the conductance of $100-200\;{\mu}S/cm$ are 9.1 ml/min and 62 ml/min, the generated electromotive forces are $261\;{\mu}V$ and 7.3 mV, respectively.

• Resources Recycling
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• v.27 no.5
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• pp.14-22
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• 2018

In this study, scarp of PCB containing copper and precious metals was manufactured as an anode, and electrorefining experiments were conducted on change of $H_2SO_4$ concentration and current density. Through electrolytic refining experiments, the concentration of Cu and slime recovered from each electrode was analyzed, element behavior was confirmed, and current efficiency was also calculated. As the $H_2SO_4$ concentration was increased, the current efficiency and the purity of Cu decreased, but the precious metals in the anode slime were maximally concentrated with 2.0 M $H_2SO_4$. In addition, as the current density was increased, the current efficiency decreased and the purity of Cu showed a tendency to increase, and the precious metals in the anode slime were maximally concentrated with $300A/m^2$. As a result of the pilot scale experiments, the Au content was 8,705 mg/kg, the Ag content was 35,092 mg/kg in the anode slime. As compared with the initial content, Au was concentrated 16 times and Ag concentrated 14 times.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.727-729
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• 2008

Organic field-effort transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.432-432
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• 2009

본 연구에서는 HW-PLD(Hot-walled Pulsed Laser Deposition) 법을 이용하여 ZnO 나노와이어를 $Al_2O_3$ 기판 위에 성장하였다. 성장된 ZnO 나노와이어는 SEM, XRD, PL 분석을 통하여 구조적 특성을 확인하였으며, 성장된 나노와이어를 photolithography 공정을 통하여 FET(Field Effect Transistor)소자를 제작하였다. 제작된 소자의 I-V 특성 측정 결과 Ti/Au 전극과 ZnO nanowire 채널 간에 ohmic 접합이 형성된 것을 확인하였으며 게이트 전압의 증가에 따라 소스와 드레인 사이의 전류가 증가하는 전형적인 n-type FET소자 특성을 나타내었다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.6
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• pp.1087-1091
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• 2007

Exact impedance modeling of the electrode/electrolyte interface is important in bio-signal sensing electrode development. Therefore, the investigation of the equivalent circuit models for the interface has been pursued for a long time by several researchers. Previous circuit models fit the experimental results in limited conditions such as frequency range, type of electrode, or electrolyte. This paper describes a new electrical circuit model and its capability of fitting the experimental results. The proposed model consists of three resistors and two constant phase elements. Electrochemical impedance spectroscopy was used to characterize the interface for Au, Pt, and stainless steel electrode in 0.9% NaCl solution. Both the proposed model and the previous model were applied to fit the measured impedance results for comparison. The proposed model fits the experimental data more accurately than other models especially at the low frequency range, and it enables us to predict the impedance at very low frequency range, including DC, using the proposed model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.930-933
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.41-48
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• 1992

The characteristics of traveling-wave electrodes for high-frequency electroptic integrated devices are described from the view point of improvement of phase-matching based on the conformal mapping method. Specific calculations of the characteristic impedance, effective microwave index, and eletrode loss for asymmetric coplanar strip(ACPS) and coplanar waveguide(CPW) electrode structures are presented as a function of the geometric electrode parameters including the electrode thickness and buffer layer thickness. 5-10(x10S0-6Tm) thick Au-ACPS electrodes were successfully fabricated by electroplating and ECR etcher. The improvement of modulation bandwidth can be theoretically observed from the combination of electrode and buffer layer thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.271-272
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• 2008

We fabricated a pentacene thin-film transistor with Ni/Ag source/drain electrodes. Also, we obtained similar electrical characteristics as compared with source/drain electrode with Au. This device was found to have a field-effect mobility of about 0.021 $cm^2$/Vs, a threshold voltage of -5, -7 V, an subthreshold slope of 2.0, 4.5 V/decade, and an on!off current ratio of $3.6\times10^5$, $2.0\times10^6$.