• The Journal of the Acoustical Society of Korea
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• v.15 no.6
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• pp.81-89
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• 1996

It is very important for ultrasonic test method to evaluate the integrity of the class I components in nuclear power plants. However, as the rltrasonic test is affected by internal structures and configurations of test materials, backscattering, that is, time invariant noise is generated in large grain size materials. Due to the above reason, the received signal results in low signal to noise(S/N) ratio. Split spectrum processing(SSP) technique is effective to suppress the grain noise. The conventional SSP technique. however, has been applied to unique algorithm. This paper shows that MPO(minimization and polarity threshold) algorithm which two algorithms are applied simulatancously, was utilized, the signal processing time was shorten by using the new constant-Q SSP with the FIR filter which frequency to bandwidth ratio is constant and the optimum parameters were analysed for the signal processing to longitudinal wave and shear wave with the same requirements of inspection on nuclear power plant site. Moreover, the new ultrasonic test instrument, the reference block of the same product form and material specification, stainless stell test specimens and copper test specimens block of the same fabricated for the application of new SSP technique. As the result of experimental test with new ultrasonic test instrument and test specimens, the signal to noise ratio was improved by appying the new SSP technique.

• Analytical Science and Technology
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• v.15 no.2
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• pp.108-114
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• 2002

The new system using a glow discharge atomic emission spectrometer for the direct analysis of solid samples has been developed and characterized. The system was consisted of new glow discharge cell improved previous gas-jet boosted nozzle and radio-frequency power supply. In the case of previous type glow discharge chamber, it had been fitted trace analysis of low alloy steel with low discharge power, because it was to decrease redeposition and increase sample weight loss. But it had a problem that plasma becomes unstale due to increased sample weight loss and redeposition resulting from the high discharge power. Because of being problem of previous glow discharge, it is impossible to analyze using high power. The modified gas-jet boosted glow discharge to solve this problem would improve to be less sample loss rate of modified nozzle than sample loss rate of previous nozzle on the equal discharge condition, and improve to increase stability of plasma. The effect of discharge parameters such as discharge pressure, gas flow rate and power on the sample loss rate, emission intensity has been studied to find optimum discharge conditions. The calibration curves of Fe were obtained with 3 low-alloy samples.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.434-435
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• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.

• Analytical Science and Technology
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• v.28 no.1
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• pp.33-39
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• 2015

CdS-QD particles are a nano-sized semiconducting crystal that emits light. Their optical properties show great potential in many areas of applications such as disease-diagnostic reagents, optical technologies, media industries and solar cells. The wavelength of emitting light depends on the particle size and thus the quality control of CdS-QD particle requires accurate determination of the size distribution. In this study, CdS-QD particles were synthesized by a simple ${\gamma}$-ray irradiation method. As a particle stabilizer polyvinyl pyrrolidone (PVP) were added. In order to determine the size and size distribution of the CdS-QD particles, sedimentation field-flow fractionation (SdFFF) was employed. Effects of carious parameters including the the flow rate, external field strength, and field programming conditions were investigated to optimize SdFFF for analysis of CdS-QD particles. The Transmission electron microscopy (TEM) analysis show the primary single particle size was ~4 nm, TEM images indicate that the primarty particles were aggregated to form secondary particles having the mean size of about 159 nm. As the concentration of the stabilizer increases, the particle size tends to decrease. Mean size determined by SdFFF, TEM, and dynamic light scattering (DLS) were 126, 159, and 152 nm, respectively. Results showed SdFFF may become a useful tool for determination of the size and its distribution of various types of inorganic particles.

• Journal of Periodontal and Implant Science
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• v.38 no.sup2
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• pp.373-384
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• 2008

Purpose: The aim of this study is to compare the healing response of various Hydroxyapatite(HA) coated dental implants by Ion-Beam Assisted Deposition(IBAD) placed in the surgically created circumferential gap in dogs. Materials and methods: In four mongrel dogs, all mandibular premolars and the first molar were extracted. After an 8 weeks healing period, six submerged type implants were placed and the circumferential cylindrical 2mm coronal defects around the implants were made surgically with customized step drills. Groups were divided into six groups : anodized surface, anodized surface with 150nm HA and heat treatment, anodized surface with 300nm HA and heat treatment, anodized surface with 150nm HA and no heat treatment, and anodized surface with 150nm HA, heat treatment and bone graft, anodized surface with bone graft. The dogs were sacrificed following 12 weeks healing period. Specimens were analyzed histologically and histomorphometrically. Results: During the healing period, healing was uneventful and implants were well maintained. Anodized surface with HA coating and $430^{\circ}C$ heat treatment showed an improved regenerative characteristics. Most of the gaps were filled with newly regenerated bone. The implant surface was covered with bone layer as base for intensive bone formation and remodeling. In case that graft the alloplastic material to the gaps, most of the coronal gaps were filled with newly formed bone and remaining graft particles. The bone-implant contact and bone density parameters showed similar results with the histological findings. The bone graft group presented the best bone-implant contact value which had statistical significance. Conclusion: Within the scope of this study, nano-scale HA coated dental implants appeared to have significant effect on the development of new bone formation. And additional bone graft is an effective method in overcoming the gaps around the implants.

• Nuclear Engineering and Technology
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• v.5 no.1
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• pp.30-37
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• 1973

The Nishitani's equations for impedance of anodic oxide films have been derived based on a p-i-n model under the assumption of $\omega$$\varepsilon$$\rho$$_{ο}$<<4$\pi$<<$\omega$$\varepsilon$$\rho$$_{\omega}$, where $\omega$ is angular frequency, $\varepsilon$ is dielectric constant, and $\rho$$_{ο}$ and $\rho$$_{\omega}$ are the resistivity of the interface region and the intrisic region of the anodic oxide film, respectively. Since it is not possible to evaluate all parameters in the equations, however, any clear physical picture cannot be obtained from the equations. Therefore, the equations are modified under the assumption of $\omega$$\tau$$_{\omega}$>>1 and In(1+$\omega$$^2$$\tau$$_{ο}$$^2$)<<1, where $\tau$$_{\omega}$=$\varepsilon$$\rho$$_{\omega}$(4$\pi$) and $\tau$$_{ο}$=$\varepsilon$$\rho$$_{ο}$/(4$\pi$). The modified equations are then used to explain the change in the frequency characteristics of anodic oxide films when they are heated. The change in impedance of anodic oxide films when they are heated is attributed mainly to the increase in the diffusion layer and to the decrease in the resistivity of anodic oxide films.s.

• Food Science and Preservation
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• v.12 no.1
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• pp.48-53
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• 2005

Comparative effects between commercial fumigation (methyl bromide/MeBr, phosphine $gas/PH_3$) and gamma irradiation (5, 10 kGy) on dried red pepper were investigated in terms of it microbiological quality, moisture content Hunter's colors, and UV-visible spectra during storage for 8 months at mom temperature. The non-treated control samples showed total aerobic bacteria as $4.8\times10^5\;CFU/g$ in powdered state and $1.8\times10^2\;CFU/g$ in whole red repper. While yeasts and molds were $1.7\times10^5\;CFU/g$ in powdered pepper and $5.0\times10^2\;CFU/g$ in whole pepper, respectively. The effect of chemical fumigant on microbial decontamination was negligible, whereas irradiation at 5 kGy was proven to reduce the microbial populations by 2 to 3 log cycles that could improve the hygienic quality of powdered pepper. Moisture content of the samples showed no noticeable changes resulting 1mm irradiation or fumigation. Immediately after treatments, irradiation or fumigation reduced Hunter's lightness (L), redness (a), and yellowness (b) of the samples (p<0.05), but there was no difference in color parameters between the control and all treated stoups after 4 months of storage. It was found that storage period was more influential than irradiation or fumigation to changes in moisture and color of dried red pepper and ie powder.

• Journal of the Korean Chemical Society
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• v.17 no.2
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• pp.105-114
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• 1973

The crystal structure of morpholinothiosemicarbazide has been determined by single crystal X-ray analysis. The lattice constants are a = 4.19(2), b = 6.56(2) and c = 26.67(4)${\AA}$. The unit cell contains 4 molecules and the space group is$P2_12_12_1$. The atomic parameters have been refined by least-squares method to a final R value of 0.07, based on the 651 observed reflexions. The amino nitrogen atom forms hydrogen bonds to the sulfur atoms of the other molecules related by the two-fold screw axis parallel to the a-axis, the distances of the hydrogen bonds being 3.48 and 3.49${\AA}$. On the other hand, the imino nitrogen atom forms a hydrogen bond to the amino nitrogen atom of the other molecule related by the two-fold screw axis parallel to the a-axis, the distance of the hydrogen bond being 3.04${\AA}$. These three hydrogen bonds arrange the molecules around the two-fold screw axis. Apart from the hydrogen bonding system the structure is held together by van der Waals forces.

• Nuclear Engineering and Technology
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• v.6 no.1
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• pp.14-22
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• 1974

Effects of anodization voltage on frequency characteristics of anodic oxide films on tantalum were analyzed based on the following impedance equatious : (equation omitted) Here $R_{f}$, $C_{f}$ and tan $\delta$$_{f}$ are equivalent series resistance in ohm, equivalent Belies capacitance in farad and dielectric loss, of anodic oxide films respectively Parameters P, $\tau$$_{ο}$, $\tau$$_{\omega}$, and Co are defined as follows: P=(d-w)/w, $\tau$$_{ο}$=$textsc{k}$$\rho$$_{ο}$, $\tau$$_{\omega}$=$textsc{k}$$\rho$$_{\omega}$, $C_{ο}$=$textsc{k}$A/d where d is the thickness of oxide film, $\omega$ is the diffusion layer thickness. $\rho$$_{ο}$ is the resistivity of oxide film at the interface of metal and the oxide, $\rho$$_{\omega}$ is the resistivity of oxide film at intrinsic region and A is the area of the film and $textsc{k}$=0.0885$\times$10$^{-12}$ $\times$dielectric constant, (in farad/cm). It was shown that dielectric loss and frequency dependence of equivalent series capacitance decrease as anodization voltage increases. This is a consequence of the fact that the thickness of diffusion layer increases a little with increasing anodization voltage whereas the total oxide thickness is proportional to the anodization voltage. The ngative deviation of measured values from tile relation, tan $\delta$$_{f}$=0.682 $\Delta$ $C_{f}$, was also discussed based on the Impedance equations given above. Here $\Delta$ $C_{f}$ is the change in capacitance between 0.1 and 1 KHZ.KHZ.Z.