• Journal of Radiation Protection and Research
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• v.40 no.1
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• pp.1-9
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• 2015

Compton cameras overcome several limitations of conventional mechanical collimation based gamma imaging devices, such as pin-hole imaging devices, due to its electronic collimation based on coincidence logic. Especially large-scale Compton camera has wide field of view and high imaging sensitivity. Those merits suggest that a large-scale Compton camera might be applicable to monitoring nuclear materials in large facilities without necessity of portability. To that end, our research group have made an effort to design a large-scale Compton camera for safeguard application. Energy resolution or position resolution of large-area detectors vary with configuration style of the detectors. Those performances directly affect the image quality of the large-scale Compton camera. In the present study, a series of Geant4 Monte Carlo simulations were performed in order to examine the effect of those detector parameters. Performance of the designed large-scale Compton camera was also estimated for various monitoring condition with realistic modeling. The conclusion of the present study indicates that the energy resolution of the component detector is the limiting factor of imaging resolution rather than the position resolution. Also, the designed large-scale Compton camera provides the 16.3 cm image resolution in full width at half maximum (angular resolution: $9.26^{\circ}$) for the depleted uranium source considered in this study located at the 1 m from the system when the component detectors have 10% energy resolution and 7 mm position resolution.

• The Korean Journal of Pesticide Science
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• v.2 no.3
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• pp.64-69
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• 1998

New thirty derivatives of 5,6-dihydro-2-trifluoromethyl-1,4-oxathiin carboxanilide as substrate(S) were synthesized and their fungicidal activities in vivo against rice sheath blight(Rhizoctonia solani) and wheat leaf rust(Puccinia recondita) were examined. The structure activity relationships(SAR) between the activities($pI_{50}$) and a physicochemical parameters of substituents(X) at the phenylcarbamoyl group were analyzed using the adaptive regression analysis method. The 3-methoxy, 11, 3-isopropyloxy, 13 and 3-isopropyl substituent, 25 as X on the phenylcarbamoyl group exhibited the most highest fungicidal activity against the two fungi. The fungicidal potency of the (S) against Puccinia recondita was higher than Rhizoctonia solani. In case of Rhizoctonia solani, the molecular hydrophobicity(${\pi}>0$) and resonance effect(R<0) by meta-alkyl substitutents with electron donating were important factors in determining fungicidal activity. And the HOMO energy(HOMO>0), ABSQ, sum of absolute values of the atomic charges on each atom and specific polarizability(Sp.Pol<0) of (S) were significantly influential towards fungicidal activity against Puccinia recondita.. The interaction between (S) and receptor agonist from the based on SAR studies proceeds through charge-control reaction, and conditions to show higher activity has been also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.375-375
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• 2012

Graphene is a sp2-hybridized carbon sheet with an atomic-level thickness and a wide range of graphene applications has been intensely investigated due to its unique electrical, optical, and mechanical properties. In particular, hybrid graphene structures combined with various nanomaterials have been studied in energy- and sensor-based applications due to the high conductivity, large surface area and enhanced reactivity of the nanostructures. Conventional metal-catalytic growth method, however, makes useful applications difficult since a transfer process, used to separate graphene from the metal substrate, should be required. Recently several papers have been published on direct graphene growth on the two dimensional planar substrates, but it is necessary to explore a direct growth of hierarchical nanostructures for the future graphene applications. In this study, uniform graphene layers were successfully synthesized on highly dense dielectric nanowires (NWs) without any external catalysts. We also demonstrated that the graphene morphology on NWs can be controlled by the growth parameters, such as temperature or partial pressure in chemical vapor deposition (CVD) system. This direct growth method can be readily applied to the fabrication of nanoscale graphene electrode with designed structures because a wide range of nanostructured template is available. In addition, we believe that the direct growth growth approach and morphological control of graphene are promising for the advanced graphene applications such as super capacitors or bio-sensors.

• Journal of the Korean Geographical Society
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• v.47 no.5
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• pp.755-774
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• 2012

The main objective of the study is to propose GIS-based methods to assess the population distribution criteria for undesirable facilities such as nuclear power plants. First of all, a review of the relevant criteria was conducted for the official documents compiled by such institutions as IAEA (International Atomic Energy Agency), U.S. NRC (Nuclear Regulatory Commission), and some national institutes including the Korea Institute of Nuclear Safety. It is informed from the review that the fundamental principle underlying the various criteria is to maximize the distance between a plant and the nearest population center. It is realized that two interrelated GIS-based techniques need to be devised to put the principle into practice; sophisticated ways of representing population distribution and identifying population centers. A dasymetric areal interpolation is proposed for the former and cell-based and area-based critical density methods are introduced. Grid-based population distributions at various spatial resolutions are created by means of the dasymetric areal interpolation. By applying the critical density methods to the gridded population distribution, some population centers satisfying the population size and density criteria can be identified. These methods were applied to the case of the Gori-1 nuclear power plant and their strengths and limitations were discussed. It was revealed that the assessment results could vary depending upon which method was employed and what values were chosen for various parameters. This study is expected to contribute to foster the applications of methods and techniques developed in geospatial analysis and modeling to the site selection and evaluation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

• Journal of environmental and Sanitary engineering
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• v.9 no.1
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• pp.53-61
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• 1994

Sungnam city, as a major satellite town, is located in the southeast of Seoul. Atmospheric conditions are so stable that air pollutants from various emissions are tend to resist change because Sungnam city is located in the Namhansansung valley. The industrial distribution of Sungnam city are composed of various manufactories such as foods, fibers, chemicals, machinery and electronics etc. The heavy metal concentrations and size distribution are the most important parameters influencing among the way in which respirable suspended particulate matter interact with the human respiratory system. Respirable suspended particulate matter was collected on glass fiber filters from April 1993 to February 1994 according to particle size using Anderson sampler during 10 days per month at Sungnam city. 6 heavy metals, Fe, Zn, Pb Mn, Cu and Cd, were analyzed by particle size with atomic absorption spectrophotometry . The results could be summarized as follows: 1. The annual arithmetic mean concentration of total suspended particulate was 116.3$\mu $g/m$^{3}$ m', seasonal variation was the highest in spring season(196.5$\mu $g/m$^{3}$) and the lowest in Summer Season(72.9$\mu $g/m$^{3}$). 2. The ratio of airborne particulate concentrations respirable to nonrepairable( Res/Non- Res) of annual arithmetic mean value was 5.8'1, seasonal variation was highest in the spring season(6.3 : 1) and lowest in the summer season(4.6 : 1). 3. During the spring season the shape of the size distribution was trimodal which showed peaks at 3 size groups, which were below of 0.43$\mu $m, 3.3∼4.7$\mu $m and above of 11.0$\mu $g/m$^{3}$ respectively. 4. Respirable suspended particulate matter concentrations of Zn, Pb Cu and Cd were the highest in below of 0.43$\mu $m as follows; 0.517$\mu $g/m$^{3}$, 0.411 $\mu $g/m$^{3}$, 0.062$\mu $g/m$^{3}$ and 0.0310$\mu $g/m$^{3}$ , respectively, Fe and Mn were the highest in the particle size range of 4.7 ∼ 7.0$\mu $m as follows; 2.504$\mu $g/m$^{3}$ and 0.095$\mu $g/m$^{3}$, respectively. 5. The Pt Cd, Zn, Cu, Fe and Mn concentrations of annual arithmetic mean value respirable to non- respirable( Res/Non- Res ) were 33.65, 19.27, 17.74, 10.54, 3.20 and 5.20, respectively.

• Journal of the Korean Society of Food Science and Nutrition
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• v.40 no.6
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• pp.824-831
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• 2011

This study was to investigate 90-day repeated-dose toxicities of 50 kGy irradiated methanol extract powder of red ginseng in ICR mice. The test materials (methanol extract powder of red ginseng with or without 50 kGy irradiation) were administered by gavage to male and female ICR mice at dose levels of 0, 125, 250 and 500 mg/kg/day for 90 days. In the results, no abnormality was observed in mortality, clinical findings, body weight changes, food consumptions, opthalmoscopic findings, necropsy findings and histopathological findings. Although the minor changes in blood and biochemical parameters were observed, they were not dose dependent and not affected by gamma irradiation. In conclusion, 90-day repeated oral dose of the methanol extract powder of red ginseng and 50 kGy irradiated methanol extract powder of red ginseng to ICR mice did not cause apparent toxicological change at the dose of 125, 250 and 500 mg/kg body weight.

• Journal of Microbiology and Biotechnology
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• v.8 no.2
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• pp.158-164
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• 1998

Crystal structural analyses of the API-TLCK complex revealed that the ${\epsilon}$-amino group (NZ) of the lysyl part of TLCK forms hydrogen bonds with OD1 of $Asp^225$ which is a substrate specificity determinant of API, OG of $Ser^214$, O of $Ser^214$, OG1 of $Thr^189$, and O of $Thr^189$ l89/. The ${\beta}$-carboxyl oxygen of $Asp^225$ forms hydrogen bonds with the NE1 of $Trp^182$. From these observations, it is thought that besides $Asp^225$, $Thr^189$, $Ser^214$, and $Trp^182$ may also contribute to the steric specificity for lysine and high proteolytic activity of API. The side-chain hydroxyl groups of $Thr^189$ and $Ser^214$ were removed to elucidate the role of these hydrogen bonds in the $S_1$-pocket. The $k_{cat}$/$K_m$ of T189V, S214A, and T189V.S214A were decreased to 1/4, 1/3, and 1/46, respectively, of the value for native API. The decreased activities were mainly due to the increase of $K_m$. The CD and fluoroscence spectra of the three mutants were similar to those of wild-type API. With regards to the kinetic parameters ($K_i\;and\;k_2$) of mutants for the reaction involving TLCK and DFP, $k_2$decreased by increase of $K_1$ only. These results suggest that the decreased catalytic activity of these mutants is caused by the partial loss of the hydrogen bond network in the $S_1$-pocket. On the other hand, the similarity of enzymatic properties between W182F and the native enzyme suggests that the hydrogen bond between OD2 of $Asp^225$ and NE1 of $Trp^182$ is not directly related to the reaction of $Asp^225$ with the substrate.