• Title/Summary/Keyword: Atomic ion beam

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Superhydrophilic Surface Modification of Polyvinylidene Fluoride by Low Energy and High Flux ion Beam Irradiation (저에너지 고출력 이온빔을 이용한 polyvinylidene fluoride 표면의 초친수성화)

  • Park Jong-Yong;Jung Yeon-Sik;Choi Won-Kook
    • Korean Journal of Materials Research
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    • v.15 no.6
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    • pp.382-387
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    • 2005
  • Polyvinylidene fluoride (PVDF) surface was irradiated and became superhydrophilic by low energy (180 eV) and high flux $(\~10^{15}/cm{\cdot}s)$ ion beam. As an ion source, a closed electron Hall drift thruster of $\phi=70mm$ outer channel size without grid was adopted. Ar, $O_2$ and $N_2O$ were used for source gases. When $N_2O^+$ and $O_2^+$ reactive gas ion beam were irradiated with the ion fluence of $5\times10^{15}/cm^2$, the wetting angle for deionized water was drastically dropped from $61^{\circ}\;to\;4^{\circ}\;and\;2^{\circ}$, respectively. Surface energy was also increased up to from 44 mN/m to 81 mN/m. Change of chemical component in PVDF surface was analyzed by x-ray photoelectron spectroscopy. Such a great increase of the surface energy was intimately related with the increase of hydrophilic group component in reactive ion irradiated PVDF surfaces. By using an atomic force microscopy, the root-mean-square of surface roughness of ion irradiated PVDF was not much altered compared to that of pristine PVDF.

THE FABRICATION OF A PROCESS HEAT EXCHANGER FOR A SO3 DECOMPOSER USING SURFACE-MODIFIED HASTELLOY X MATERIALS

  • Park, Jae-Won;Kim, Hyung-Jin;Kim, Yong-Wan
    • Nuclear Engineering and Technology
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    • v.40 no.3
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    • pp.233-238
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    • 2008
  • This study investigates the surface modification of a Hastelloy X plate and diffusion bonding in the assembly of surface modified plates. These types of plates are involved in the key processes in the fabrication of a process heat exchanger (PHE) for a $SO_3$ decomposer. Strong adhesion of a SiC film deposited onto Hastelloy X can be achieved by a thin SiC film deposition and a subsequent N ion beam bombardment followed by an additional deposition of a thicker film that prevents the Hastelloy X surface from becoming exposed to a corrosive environment through the pores. This process not only produces higher corrosion resistance as proved by electrolytic etching but also exhibits higher endurance against thermal stress above 9$900^{\circ}C$. A process for a good bonding between Hastelloy X sheets, which is essential for a good heat exchanger, was developed by diffusion bonding. The diffusion bonding was done by mechanically clamping the sheets under a heat treatment at $900^{\circ}C$. When the clamping jig consisted of materials with a thermal expansion coefficient that was equal to or less than that of the Hastelloy X, sound bonding was achieved.

Properties of $TiO_2$ thin films deposited by ion-beam assisted reactive magnetron sputtering (이온빔 보조 반응이온 마그네트론 스퍼터링으로 증착된 $TiO_2$박막의 특성)

  • 김성화;이재홍;황보창권
    • Journal of the Korean Vacuum Society
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    • v.11 no.3
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    • pp.141-150
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    • 2002
  • Titanium oxide thin films were deposited by DC reactive magnetron sputtering(RMS) with Ar ion-beam assistance using end-Hall ion source at low oxygen partial pressure and long target-to-substrate distance. The optical and structural properties of deposited films were investigated by the measurement of measured transmittance and reflectance, atomic force microscope(AFM), and X-ray diffraction(XRD). The results show that the Ax ion-beam assisted RMS for titanium oxide thin films induces the higher packing density, lower absorption, and smoother surface than the conventional RMS, suggesting that it can be employed in deposition of optical dielectric coatings.

Structural and Discharge Characteristics of MgO Deposited by Oxygen-Ion-Beam-Assisted Deposition in AC PDP (산소 이온 빔 보조 증착된 AC PDP용 MgO 보호막의 특성 연구)

  • Li, Zhao-Hui;Kim, Kwang-Ho;Ahn, Min-Hung;Hong, Seng-Jae;Im, Seung-Kyeok;Kwon, Sang-Jik
    • Journal of the Korean Vacuum Society
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    • v.16 no.5
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    • pp.338-342
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    • 2007
  • The magnesium oxide (MgO) protective layer plays an important role in plasma display panels (PDPs). In this paper, we describe the structural and discharge properties of MgO thin films, which were prepared by the ion-beam-assisted deposition (IBAD) of oxygen as the protective layer of PDPs. The energy of the oxygen ion beam was used as the parameter to control the deposition. We found that the oxygen ion beam energy was effective in determining in structural and discharge characteristics. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when the MgO thin film was deposited with an oxygen ion beam energy of 300 eV. The crystallization of the MgO thin film was also measured by X-ray diffraction analysis, and the surface quality was measured by atomic force microscopy.

Study on Electro-Optical Specific of Polyimide and Organic Overcoat (PI와 유기 절연막 과의 전기광학 특성 비교에 관한 연구)

  • Kim, Byoung-Yong;Kim, Jong-Hwan;Han, Jeong-Min;Kim, Young-Hwan;Kang, Dong-Hoon;Kim, Jong-Yeon;Ok, Chul-Ho;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.376-376
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    • 2007
  • In Liquid Crystal Display (LCD) manufacturing, the organic over coat materials over coat materials for insulation layer of color filter with acryl ate was widely used. Therefore, we approach that the organic overcoat material can use to insulation layer for color filter and liquid crystal (LC) alignment layer in this research. The LC aligning capabilities was successful stuided for the first time. The organic overcoat layer and polymer layer was coated by spin-coating. In order to characterize the LC alignment, electric optic and residual DC and atomic force microscopy (AFM) image was used. The good LCD aligning capabilities treated on the organic overcoat thin film surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1200 eV can be achieved. Also the good LCD alignment capabilities treated polymer on surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1800 eV can be achieved. Comparing electro-optical characteristics between the Polyimide (PI) and the overcoat, the resultant transmittance of the overcoat considerably matched that of the PI and the residual DC also exhibited similar features with the PI.

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Development of Optical Signal Transmission for the KSTAR Project Pertaining to Instrumentation and Control of the Neutral Beam Test Stand at KAERI

  • Jung, Ki-Sok;Oh, Byung-Hoon
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • v.5B no.3
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    • pp.289-295
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    • 2005
  • Instrumentation and Control (I&C) of the Neutral Beam Test Stand (NB- TS) Facility at the Korea Atomic Energy Research Institute (KAERI) for the Korea Superconducting Tokamak Advanced Research (KSTAR) project has been underway since the start of the project to answer the diverse requests arising from the various facets of the development and construction phases of the project. Optical signal transmission constitutes a significant portion of I&C works and has been performed for the entirety of the project. During the NB- TS construction and related experiments, significant achievements to a more accurate as well as more refined optical signal transmissions have been made. Examples of those I&C works that utilized the optical signal transmission are the Langmuir probe signal transmission, gradient grid current signal transmission, gas flow control and signal transmission, ion source temperature measurement, beam line component temperature monitoring, and coolant flow signal transmission, etc. These optical signal transition provisions are now performing part of the indispensable functions for the proper operation of the NB- TS facility. Attained experience and expertise are expected to be well applied to the upcoming main neutral beam injection (NBI) system construction for the KSTAR project.

NanoAnalysis with TOF-MEIS (TOF-MEIS 나노분석법)

  • Yu, Kyu-Sang;Moon, DaeWon
    • Vacuum Magazine
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    • v.2 no.2
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    • pp.17-23
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    • 2015
  • Medium Energy Ion Scattering (MEIS) has been successfully used for ultrathin film analysis such as gate oxides and multilayers due to its single atomic depth resolution in compostional and structural depth profiling. Recently, we developed a time-of-flight (TOF) MEIS for the first time, which can analyze a $10{\mu}m$ small spot. Small spot analysis would be useful for test pattern analysis in semiconductor industry and various thin film technology. The ion beam damage problem is minimized due to its improved collection efficiency by orders of magnitude and the ion beam neutralization problem is removed completely for quantitative analysis. Newly developed TOF-MEIS has been applied for gate oxides, ultra shallow junctions, nanoparticles, FINFET structures to provide compositional and structural profiles. Further development for submicron spot analysis and applications for functional nano thin films and nanostructured materials are expected for various nanotechnology and biotehnology.

Effect of Ar Ion Irradiation on the Hydrogen Gas Sensitivity of SnO2 Thin Films (Ar 이온빔 조사에 따른 SnO2 박막의 물성 연구)

  • Heo, S.B.;Lee, Y.J.;Kim, S.K.;You, Y.Z.;Choi, D.H.;Lee, B.H.;Kim, M.G.;Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
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    • v.25 no.6
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    • pp.279-282
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    • 2012
  • $SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.

Alignment and lattice quality of hexagonal rings of hexagonal BN films synthesized by ion beam assisted deposition (이온빔보조증착법으로 합성한 hexagonal BN막의 hexagonal ring의 배열과 결정성)

  • 박영준;한준희;이정용;백영준
    • Journal of the Korean Vacuum Society
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    • v.8 no.1
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    • pp.43-50
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    • 1999
  • We have studied the alignment and the lattice quality of hexagonal rings of h-BN films synthesized by ion beam assisted deposition (IBAD) method. Boron was e-beam evaporated at 1.5 $\AA$/sec and nitrogen gas was ionized using end-hall type ion gun at 60, 80, and 100 eV, respectively. Substrate was either not heated or heated at 200, 400, 500, and $800^{\circ}C$, respectively. As nitrogen ion energy increases, c-axes of hexagonal rings tend to align parallel to the substrate, which is explained by larger compressive stress at higher ion energies. Alignment of c-axis increases with temperature and shows maximum around $400^{\circ}C$. The lattice quality of hexagonal rings improves with temperature. Such behaviors can be understood from two counter trends of increasing the atomic mobility and decreasing compressive stress with temperature. Hardness of h-BN films shows the same trend with the alignment of c-axis. Ion beam assisted deposition method seems to be effective for aligning hexagonal rings and optimizing h-BN properties.

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TEM sample preparation of microsized LiMn2O4 powder using an ion slicer

  • Jung Sik Park;Yoon‑Jung Kang;Sun Eui Choi;Yong Nam Jo
    • Applied Microscopy
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    • v.51
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    • pp.19.1-19.7
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    • 2021
  • The main purpose of this paper is the preparation of transmission electron microscopy (TEM) samples from the microsized powders of lithium-ion secondary batteries. To avoid artefacts during TEM sample preparation, the use of ion slicer milling for thinning and maintaining the intrinsic structure is described. Argon-ion milling techniques have been widely examined to make optimal specimens, thereby making TEM analysis more reliable. In the past few years, the correction of spherical aberration (Cs) in scanning transmission electron microscopy (STEM) has been developing rapidly, which results in direct observation at an atomic level resolution not only at a high acceleration voltage but also at a deaccelerated voltage. In particular, low-kV application has markedly increased, which requires a sufficiently transparent specimen without structural distortion during the sample preparation process. In this study, sample preparation for high-resolution STEM observation is accomplished, and investigations on the crystal integrity are carried out by Cs-corrected STEM.