• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.162-162
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• 2000

We have studied magnetic properties of Co/Pt multilayered films which have attracted great interest as high-density magneto-optical (MO) recording media due to their good MO properties. For this study, [Pt(45 )/Co(35 )]$\times$8 films were deposited with a Pt buffer layer of 60 on Si(100) substrate by alternating electron-beam evaporation in a high vacuum and were ion beam mixed by using 80keV Ar+ at 25$0^{\circ}C$. Especially, an external magnetic field was added to help changing magnetic property during ion beam mixing (IBM). The intermixing of Co and Pt layers after IBM was confirmed with Rutherford Backscattering Spectroscopy (RBS) and Transmission Electron Microscopy (TEM). The MO property of the film was measured with magneto-optical Kerr spectrometer and the change of magnetic easy axis in the film plane was observed from Ker loop data. This anomalous result might be correlated with the change of atomic structure due to the intermixing effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.259-259
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• 2008

The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

• Transactions on Electrical and Electronic Materials
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• v.7 no.6
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• pp.301-304
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• 2006

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability make SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by atomic beam exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}\;to\;45^{\circ}$ of incident angle. Consequently, the vertical alignment effect of liquid crystal electro-optical characteristic by the atomic beam alignment method on the SiC thin film layer can be achieved.

• Journal of Electrical Engineering and Technology
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• v.1 no.3
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• pp.359-365
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• 2006

Since the start of the KSTAR (Korea Superconducting Tokamak Advanced Research) project, Instrumentation and Control (I&C) of the Neutral Beam Test Facility (NB-TF) has been striving to answer diverse requests arising from various facets during the project's development and construction phases. Hard-wired electrical circuits have been designed, tested, fabricated, and finally installed to the relevant parts of the system. In relation to the vacuum system I&C, controlling functions for the rotary pumps, a Roots pump, two turbomolecular pumps, and four cryosorption pumps have been constructed. I&C for the ion source operation are the temperature and flow rate signal monitoring, Langmuir probe signal measurements, gradient grid current measurements, and arc detector circuit. For the huge power system to be monitored or safely operated, many temperature measurement functions have also been implemented for the beam line components like the neutralizer, bending magnet, ion dump, and calorimeter. Nearly all of the control and probe signals between the NB test stand and the control room were made to be transmitted through the optical cables. Failures of coolant flow or beam line vacuum pressure were made to be safely blocked from influencing the system by an appropriate interlock circuit that will shut down the extraction voltage application to the system or prevent damages to the vacuum components. Preliminary estimation of the beam power through the calorimetric measurement shows that 87.9% of the total power of the 60kV/18A beam with 200 seconds duration is absorbed by the calorimeter surface. Most of these I&C results would be highly appropriate for the construction of the main NBI facility for the KSTAR national fusion research project.

• Transactions on Electrical and Electronic Materials
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• v.9 no.5
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• pp.202-205
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• 2008

We have studied the liquid crystal (LC) orientation behavior on the organic hybrid overcoat layer with ion beam irradiation. Excellent LC alignments of the nematic liquid crystal (NLC) on the ion beam irradiated organic hybrid overcoat layers were observed in various intensities above 600 eV. Pretilt angles of the NLC on the organic hybrid overcoat layers for all ion beam energy intensities were observed from 0.2 to 0.5 degrees. Also, we used the atomic force microscopy (AFM) images for measuring the roughness of the organic hybrid overcoat layers with ion beam irradiation before and after. The surface of organic hybrid overcoat layers was leveled off by the ion beam irradiation. Finally, a good LC alignment thermal stability on the organic hybrid overcoat layer with ion beam irradiation can be achieved.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.109-109
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• 1999

Recently, low energy ion beam irradiation has been adopted for surface modification. Low energy ion beam irradiation has many advantages in polymer engineering such as weak damage, good adhesion, noticeably-enhanced wettability(less than 15 degree), good reproducibility and so on. In this experiment, chemical reactions between free radicals and environment gas species have been investigated using angle-resolved XPS and TRIM code. In the case of low ion beam energy (around 1 keV), energy loss in polymer is mainly originated from atomic collisions instead of electronic interference. Atomic collisions could generated displaced atoms and free radicals. Cold cathode-ion source equipped with 5cm convex grid was used in an O2 environment. Base and working pressure were 5$\times$10-6 and 2.3$\times$10-4 Torr. Flow rates of argon and oxygen were fixed at 1.2 and 8 sccm. target materials are polyethylene polyvinyidenefluoride and polytetrafluoroethylene.

• Journal of Powder Materials
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• v.19 no.1
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• pp.67-71
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• 2012

The present paper gives an overview about the Atom Probe Tomography technique and its application to powder materials. The preparation of needle-shaped Atom Probe specimens from a single powder particle using focused-ion-beam milling is described. Selected experimental data on mechanically alloyed (and sintered) powder materials are presented, giving insight into the atomic-scale elemental redistribution occurring under powder metallurgical processing.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.86-86
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• 2006

• Proceedings of the Korean Nuclear Society Conference
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• 2005.05a
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• pp.1104-1105
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.