• Nuclear Engineering and Technology
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• v.35 no.3
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• pp.226-233
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• 2003

The discharge characteristics of a prototype ion source was investigated, which was developed and upgraded for the NBI (Neutral Beam Injection) heating system of KSTAR (Korea Superconducting Tokamak Advanced Research). The ion source was designed for the arc discharge of magnetic bucket chamber with multi-pole cusp fields. The ion source was discharged by the emission-limited mode with the control of filament heating voltage. The maximum ion density was 4 times larger than the previous discharge controlled by a space-charge-limited mode with fully heated filament. The plasma (ion) density and arc current were proportional to the filament voltage, but the discharge efficiency was inversely proportional to the operating pressure of hydrogen gas. The maximum ion density and arc current were obtained with constant arc voltage ($80{\sim}100V$), as $8{\times}10^{11}cm^{-3}$ and 1200 A, respectively. The estimated maximum beam current was about 35 A, extracted by the accelerating voltage of 80kV.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.205.2-205.2
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• 2014

The effects of ion beam mixing of a SiC film coated on super alloys (hastelloy X substrates) were studied, aiming at developing highly sustainable materials at above $900^{\circ}C$ in decomposed sulfuric acid gas (SO2/SO3/H2O) channels of a process heat exchanger. The bonding between two dissimilar materials is often problematic, particularly in coating metals with a ceramics protective layer. A strong bonding between SiC and hastelloy X was achieved by mixing the atoms at the interface by an ion-beam: The film was not peeled-off at ${\geq}900^{\circ}C$, confirming excellent adhesion, although the thermal expansion coefficient of hastelloy X is about three times higher than that of SiC. Instead, the SiC film was cracked along the grain boundary of the substrate at above $700^{\circ}C$. At ${\geq}900^{\circ}C$, the film was crystallized forming islands on the substrate so that a considerable part of the substrate surface could be exposed to the corrosive environment. To cover the exposed areas and cracks multiple coating/IBM processes have been developed. An immersion corrosion test in 80% sulfuric acid at $300^{\circ}C$ for 100 h showed that the weight retain rate was gradually increased when increasing the processing time.

• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.70-77
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• 2024

A low energy ion irradiation system based on the deuterium arc ion source with a high perveance of 1 µP for a single extraction aperture has been successfully developed for the investigation of ion irradiation on plasma-facing components including the first mirror of plasma optical diagnostics system. Under the optimum operating condition for mirror testing, the ion source has a beam energy of 200 eV and a current density of 3.7 mA/cm². The ion source comprises a magnetic cusp-type plasma source, an extraction system, a target system with a Faraday cup, and a power supply control system to ensure stable long time operation. Operation parameters of plasma source such as pressure, filament current, and arc power with D₂ discharge gas were optimized for beam extraction by measuring plasma parameters with a Langmuir probe. The diode electrode extraction system was designed by IGUN simulation to optimize for 1 µP perveance. It was successfully demonstrated that the ion beam current of ~4 mA can be extracted through the 10 mm aperture from the developed ion source. The target system with the Faraday cup is also developed to measure the beam current. With the assistance of the power control system, ion beams are extracted while maintaining a consistent arc power for more than 10 min of continuous operation.

• Proceedings of the Korean Nuclear Society Conference
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• 2003.10a
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• pp.418-418
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• 2003

• Nuclear Engineering and Technology
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• v.36 no.4
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• pp.357-363
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• 2004

A prototype long pulse ion source was developed, and the beam extraction experiments of the ion source were carried out at the Neutral Beam Test Stand (NBTS) of the Korea Superconducting Tokamak Advanced Research (KSTAR). The ion source consists of a magnetic bucket plasma generator, with multi-pole cusp fields, and a set of tetrode accelerators with circular apertures. Design requirements for the ion source were a 120kV/65A deuterium beam and a 300 s pulse length. Arc discharges of the plasma generator were controlled by using the emission-limited mode, in turn controlled by the applied heating voltage of the cathode filaments. Stable and efficient arc plasmas with a maximum arc power of 100 kW were produced using the constant power mode operation of an arc power supply. A maximum ion density of $8.3{\times}10^{11}\;cm^{-3}$ was obtained by using electrostatic probes, and an optimum arc efficiency of 0.46 A/kW was estimated. The accelerating and decelerating voltages were applied repeatedly, using the re-triggering mode operation of the high voltage switches during a beam pulse, when beam disruptions occurred. The decelerating voltage was always applied prior to the accelerating voltage, to suppress effectively the back-streaming electrons produced at the time of an initial beam formation, by the pre-programmed fast-switch control system. A maximum beam power of 0.9 MW (i.e. $70\;kV{\times}12.5\;A$) with hydrogen was measured for a pulse duration of 0.8 s. Optimum beam perveance, deduced from the ratio of the gradient grid current to the total beam current, was $0.7\;{\mu}perv$. Stable beams for a long pulse duration of $5{\sim}10\;s$ were tested at low accelerating voltages.

• Journal of Radiation Industry
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• v.6 no.4
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• pp.317-322
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• 2012

In this study, the preparation of a temperature-responsive poly(N-isopropylacrylamide) (PNIPAAm)-grafted surface was performed using an eco-friendly and biocompatible ion beam-induced surface graft polymerization. The surface of a perfluoroalkoxy (PFA) film was activated by ion implantation and N-isopropylacrylamide (NIPAAm) was then graft polymerized selectively onto the activated regions of the PFA surfaces. Based on the results of the peroxide concentration and grafting degree measurements, the amount of the peroxide groups formed on the implanted surface was dependant on the fluence, which affected the grafting degree. The results of the FT-IR-ATR, XPS, and SEM confirmed that the NIPAAm was successfully grafted onto the implanted PFA. Moreover, the contact angle measurement at different temperatures revealed that the surface of the PNIPAAm-grafted PFA film was temperature-responsive.

• Journal of Radiation Industry
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• v.6 no.1
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• pp.23-29
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• 2012

In this study, we investigated the genetic variation in the general of monocot model plant (rice) in response to various ionizing irradiations including gamma-ray, ion beam and cosmic-ray. The non-irradiated and three irradiated (200 Gy of gamma-ray and 40 Gy of ion beam and cosmic-ray) plants were analyzed by AFLP technique using capillary electrophoresis with ABI3130xl genetic analyzer. The 29 primer combinations tested produced polymorphism results showing a total of 2,238 bands with fragments sizes ranged from 30 bp to 600 bp. The number of polymorphism generated by each primer combinations was varied significantly, ranging from 2 (M-CAC/E-ACG) to 158 (M-CAT/E-AGG) with an average of 77 bands. Polymorphic peaks were detected as 1,269 with an average of 44 per primer combinations. By UPGMA (Unweighted Pair Group Method using Arithmetic clustering) analysis method, the clusters were divided into non-irradiated sample and three irradiated samples at a similarity coefficient of 0.41 and three irradiation samples was subdivided into cosmic-ray and two irradiation samples (200 Gy of gamma-ray and 40 Gy of ion beam) at similarity coefficient of 0.48. Similarity coefficient values ranged from 0.41 to 0.55.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.119-119
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• 2015

Ion beam sputtering has been widely used in Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES) for depth profile or surface cleaning. However, mainly due to severe matrix effects such as surface composition change from its original composition and damage of the surface generated by ion beam bombardment, conventional sputtering skills using mono-atomic primary ions with energy ranging from a few hundred to a thousand volts are not sufficient for the practical surface analysis of next-generation organic/inorganic device materials characterization. Therefore, minimization of the surface matrix effects caused by the ion beam sputtering is one of the key factors in surface analysis. In this work, the electronic structure of a $Ta_2O_5$ thin film on $SiO_2/Si$ (100) after Ar Gas Cluster Ion Beam (GCIB) sputtering was investigated using X-ray photoemission spectroscopy and compared with those obtained via mono-atomic Ar ion beam sputtering. The Ar ion sputtering had a great deal of influence on the electronic structure of the oxide thin film. Ar GCIB sputtering without sample rotation also affected the electronic structure of the oxide thin film. However, Ar GCIB sputtering during sample rotation did not exhibit any significant transition of the electronic structure of the $Ta_2O_5$ thin films. Our results showed that Ar GCIB can be useful for potential applications of oxide materials with sample rotation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.1 s.256
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• pp.139-144
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• 2007

This paper presents development of carbon nanotube (CNT) tip modified by focused ion beam (FIB) and experimental results in non-contact mode of atomic force microscopy (AFM) using fabricated tip. We used an electric field which causes dielectrophoresis, to align and deposit CNTs on a conventional silicon tip. The morphology of the fabricated CNT tip was then modified into a desired shape using focused ion beam. We measured anodic aluminum oxide sample and trench structure to estimate the performance of FIB-modified tip and compared with those of conventional Si tip. We demonstrate that FIB modified tip in non contact mode had superior characteristics than conventional tip in the respects of wear, image resolution and sidewall measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.234.1-234.1
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• 2015

Molybdenum disulfide (MoS2)는 van der Waals 결합을 통한 층상구조의 물질로써 뛰어난 물리화학적, 기계적 특성으로 Field Effect Transistors (FETs), Photoluminescence, Photo Detectors, Light Emitters 등의 많은 분야에서 연구가 보고 되어지고 있는 차세대 2D-materials이다. 이처럼 MoS2 가 다양한 범위에 응용될 수 있는 이유는 layer 수가 증가함에 따라 1.8 eV의 direct band gap 에서 1.2 eV 의 indirect band-gap으로 특성이 변화할 뿐만 아니라 다양한 고유의 전기적 특성을 지니고 있기 때문이다. 그러나 MoS2 는 원자층 단위의 layer control 이 어렵다는 이유로 다양한 전자소자 응용에 많은 제약이 보고 되어졌다. 본 연구에서는 MoS2 의 layer를 control 하기 위해 ICP system 에서 mesh grid 를 삽입하여 Cl2 radical을 효과적으로 adsorption 시킨 뒤, Ion beam system 에서 Ar+ Ion beam 을 통해 한 층씩 제거하는 방식의 atomic layer etching (ALE) 공정을 진행하였다. ALE 공정시 ion bombardment 에 의한 damage 를 최소화하기 위해 Quadruple Mass Spectrometer (QMS) 를 통한 에너지 분석으로 beam energy 를 20 eV에서 최적화 할 수 있었고, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy(AFM) 분석을 통해 ALE 공정에 따른 MoS2 layer control 가능 여부를 증명할 수 있었다.