• Title/Summary/Keyword: Atomic interface

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이동형 핵종 분석 장치용 CZT 반도체 검출기의 완충전극에 대한 연구 (A Study of Interface Layer on CdZnTe Radiation Sensor for Potable Isotope Identifier)

  • 조윤호;박세환;김용균;하장호
    • 방사선산업학회지
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    • 제5권1호
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    • pp.95-99
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    • 2011
  • The electrical and mechanical properties of electrode for radiation detection are very important. In general, Au electrode and CZT crystal are combined to form ohmic contacts, and the best energy resolution is shown at the Au electrode. The metal contacts are fabricated by electroless deposition method, sputtering deposition method and thermal evaporation method. The electrode fabrication is easy with use of the thermal evaporation method, while an adhesive strength is weak. Thus interface materials such as Ag, Al and Ni were investigated to overcome defects generated by the this method. The thickness of the interface material between the Au electrode and the CZT crystal was 100 Angstroms, the Au electrode with thickness of 400 Angstroms was deposited. The Al+Au electrode is shown that the results of current-voltage and radiation response are similar to results of Au electrode.

A Generalized Model for Homogenized Reflectors

  • Pogosbekyan, Leonid;Kim, Yeong-Il;Kim, Young-Jin;Joo, Hyung-Kook
    • 한국원자력학회:학술대회논문집
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    • 한국원자력학회 1996년도 춘계학술발표회논문집(1)
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    • pp.40-45
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    • 1996
  • A new concept of equivalent homogenization is proposed. The concept employs new set of homogenized parameters: homogenized cross sections (XS) and interface matrix (IM), which relates partial currents at the celt interfaces. The idea of interface matrix generalizes the idea of discontinuity factors (DFs), proposed and developed by K.Koebke and K.Smith. The method of K.Smith can be simulated within framework of new method, while the new method approximates heterogeneous cell better in case of the steep flux gradients at the cell interfaces. The attractive shapes of new concept are: improved accuracy, simplicity of incorporation in the existing codes, equal numerical expenses in comparison to the K.Smith's approach. The new concept is useful for: (a) explicit reflector/baffle simulation; (b) control blades simulation; (c) mixed UO2/MOX core simulation, The offered model has been incorporated in the finite difference code and in the nodal code PANBOX. The numerical results show good accuracy of core calculations and insensitivity of homogenized parameters with respect to in- core conditions.

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Decision of Interface and Depth Scale Calibration of Multilayer Films by SIMS Depth Profiling

  • Hwang, Hye-Hyun;Jang, Jong-Shik;Kang, Hee-Jae;Kim, Kyung-Joong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.274-274
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    • 2012
  • In-depth analysis by secondary ion mass spectrometry (SIMS) is very important for the development of electronic devices using multilayered structures, because the quantity and depth distribution of some elements are critical for the electronic properties. Correct determination of the interface locations is critical for the calibration of the depth scale in SIMS depth profiling analysis of multilayer films. However, the interface locations are distorted from real ones by the several effects due to sputtering with energetic ions. In this study, the determination of interface locations in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multilayer systems. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors (RSF) derived from the atomic compositions of Si-Ge and Si-Ti alloy reference films determined by Rutherford backscattering spectroscopy. The thicknesses of the Si/Ge and Ti/Si multilayer films measured by SIMS depth profiling with various impact energy ion beam were compared with those measured by TEM. There are two methods to determine the interface locations. The one is the feasibility of 50 atomic % definition in SIMS composition depth profiling. And another one is using a distribution of SiGe and SiTi dimer ions. This study showed that the layer thicknesses measured with low energy oxygen and Cs ion beam and, by extension, with method of 50 atomic % definition were well correlated with the real thicknesses determined by TEM.

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Modification of conventional X-ray diffractometer for the measurement of phase distribution in a narrow region

  • Park, Yang-Soon;Han, Sun-Ho;Kim, Jong-Goo;Jee, Kwang-Yong;Kim, Won-Ho
    • 분석과학
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    • 제19권5호
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    • pp.407-414
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    • 2006
  • An X-ray diffractometer for spatially resolved X-ray diffraction measurements was developed to identify phase in the narrow (micron-scaled) region of high burn-up fuels and some nuclear materials. The micro-XRD was composed of an X-ray microbeam alignment system and a sample micro translation system instead of a normal slit and a fixed sample stage in a commercial XRD. The X-ray microbeam alignment system was fabricated with a microbeam concentrator having two Ni deposited mirrors, a vertical positioner, and a tilt table for the generation of a concentrated microbeam. The sample micro translation system was made with a sample holder and a horizontal translator, allowing movement of a specimen at $5{\mu}m$ steps. The angular intensity profile of the microbeam generated through a concentrator was symmetric and not distorted. The size of the microbeam was $4,000{\times}20{\mu}m$ and the spatial resolution of the beam was $47{\mu}m$ at the sample position. When the diffraction peaks were measured for a $UO_2$ pellet specimen by this system, the reproducibility ($2{\Theta}={\pm}0.01^{\circ}$) of the peaks was as good as a conventional X-ray diffractometer. For the cross section of oxidized titanium metal, not only $TiO_2$ in an outer layer but also TiO near an oxide-metal interface was observed.