• Title/Summary/Keyword: Atomic interface

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Verification and Validation Framework to develop MMIS Software for Nuclear Power Plants (원전 MMIS 소프트웨어 개발을 위한 확인 및 검증 방법론)

  • Lee, Jong-Bok;Suh, Yong-Suk;Suh, Sang-Moon
    • Proceedings of the Korea Information Processing Society Conference
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    • 2004.05a
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    • pp.289-292
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    • 2004
  • 원자력발전소 MMIS(Man-Machine Interface System)는 발전소 공정과 관련 장비들을 감시 및 제어하고, 필요시에 보호기능을 수행함으로써 발전소를 안전하고 신뢰성 있게 운전할 수 있도록 지원하고 있다. 그러한 MMIS의 설계에 소프트웨어기반의 컴퓨터 기술이 사용된 경우, 그 설계를 구현하기 위해 사용된 소프트웨어가 설계 및 프로그래밍 오류에 취약하여, 공통유형의 소프트웨어 오류로 인해 하드웨어로써 구축된 다중성 설계를 파기시킬 수 있기 때문에 원자력 발전소의 안전 및 안정 운전과 직결되게 된다. 또한 소프트웨어는 설계공정 결함이 일반적으로 최종 결과물에서 확인될 수 있다는 점 때문에 확인 및 검증기술을 정립하고 체계적인 적용이 필수적이다. 이에 따라 본 논문에서는 현재 설계를 진행중인 SMART(System-integrated Modular Advanced ReacTor) MMIS 소프트웨어를 개발하기 위해 적용되는 확인 및 검증 규제요건을 분석하고, 소프트웨어 개발생명주기에 따른 확인 및 검증을 체계적으로 수행하기 위한 프레임웍을 제시한다.

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Direct Observations of Al-Si Junction Interface (Al-Si 접합부의 직접관찰)

  • Lee Ki-Seon
    • Applied Microscopy
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    • v.8 no.1
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    • pp.77-79
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    • 1978
  • Al-Si junctions were made by vacuum deposition of aluminium on to silicon wafers and examined by TEM. The uneven interfaces of the junctions are formed due to the surface tension of the molten solution resulting in preferential dissolution of silicon in aluminium at some areas. These undesirable uneven interfaces affect the junction shape and so the over-all characteristics of the devices.

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A Study on the Improvement of Stress Field Analysis in a Domain Composed of Dissimilar Materials

  • Song, Kee-Nam;Lee, Jin-Seok
    • Nuclear Engineering and Technology
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    • v.30 no.3
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    • pp.202-211
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    • 1998
  • Interfacial stresses at two-material interfaces and initial displacement field over the entire domain are obtained by modifying the potential energy functional with a penalty function, which enforces continuity of the stresses at the interface of two materials. Based on the initial displacement field and interfacial stresses, a new methodology to generate a continuous stress field over the entire domain has been proposed by combining the modified projection method of stress-smoothing and Loubignac's iterative method of improving the displacement field. Stress analysis is carried out on two examples made of dissimilar materials : one is a two-material cantilever composed of highly dissimilar materials and the other is a zirconium-lined cladding tube made of slightly dissimilar materials. Results of the analysis show that the proposed method provides an improved continuous stress field over the entire domain, and accurately predicts the nodal stresses at the interface, while the conventional displacement-based finite element method produces significant stress discontinuities at the interface. In addition, the total strain energy evaluated from the improved continuous stress field converges to the exact value in a few iterations.

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Thermal Stability of Ta-Mo Alloy Film on Silicon Dioxide (실리콘 산화막에 대한 Ta-Mo 합금 게이트의 열적 안정성)

  • 노영진;이충근;홍신남
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.4
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    • pp.361-366
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    • 2004
  • The interface stability of Ta-Mo alloy film on SiO$_2$ was investigated. Ta-Mo alloy films were formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power, When the atomic composition of Ta was about 91%, the measured work function was 4.24 eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy film and SiO$_2$, C-V and XRD measurements were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and 90$0^{\circ}C$. Even after 90$0^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

NuDE 2.0: A Formal Method-based Software Development, Verification and Safety Analysis Environment for Digital I&Cs in NPPs

  • Kim, Eui-Sub;Lee, Dong-Ah;Jung, Sejin;Yoo, Junbeom;Choi, Jong-Gyun;Lee, Jang-Soo
    • Journal of Computing Science and Engineering
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    • v.11 no.1
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    • pp.9-23
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    • 2017
  • NuDE 2.0 (Nuclear Development Environment 2.0) is a formal-method-based software development, verification and safety analysis environment for safety-critical digital I&Cs implemented with programmable logic controller (PLC) and field-programmable gate array (FPGA). It simultaneously develops PLC/FPGA software implementations from one requirement/design specification and also helps most of the development, verification, and safety analysis to be performed mechanically and in sequence. The NuDE 2.0 now consists of 25 CASE tools and also includes an in-depth solution for indirect commercial off-the-shelf (COTS) software dedication of new FPGA-based digital I&Cs. We expect that the NuDE 2.0 will be widely used as a means of diversifying software design/implementation and model-based software development methodology.

Conversion from SIMS depth profiling to compositional depth profiling of multi-layer films

  • Jang, Jong-Shik;Hwang, Hye-Hyen;Kang, Hee-Jae;Kim, Kyung-Joong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.347-347
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    • 2011
  • Secondary ion mass spectrometry (SIMS) was fascinated by a quantitative analysis and a depth profiling and it was convinced of a in-depth analysis of multi-layer films. Precision determination of the interfaces of multi-layer films is important for conversion from the original SIMS depth profiling to the compositional depth profiling and the investigation of structure of multi-layer films. However, the determining of the interface between two kinds of species of the SIMS depth profile is distorted from original structure by the several effects due to sputtering with energetic ions. In this study, the feasibility of 50 atomic % definition for the determination of interface between two kinds of species in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multi-layer films. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors from Si-Ge and Si-Ti alloy reference films. The atomic compositions of Si-Ge and Si-Ti alloy films determined by Rutherford backscattering spectroscopy (RBS).

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A Study of the Couplant Effects on Contact Ultrasonic Testing

  • Kim, Young-H.;Song, Sung-Jin;Lee, Sung-Sik;Lee, Jeong-Ki;Hong, Soon-Shin;Eom, Heung-Seop
    • Journal of the Korean Society for Nondestructive Testing
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    • v.22 no.6
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    • pp.621-626
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    • 2002
  • The amplitude of a back-wall echo depends on the reflection coefficient of the interface between a transducer and a test material when using contact pulse-echo ultrasonic testing. A couplant is used to transmit ultrasonic energy across the interface, but has an influence on the amplitude of the pulse-echo signal. To investigate the couplant effect on pulse-echo ultrasonic testing, back-wall echoes are measured by using various couplants made of water and glycerine in a carbon and austenitic stainless steel specimens. The amplitude of the first back-wall echo and the apparent attenuation coefficient increases with the acoustic impedance of the couplant. The couplant having a higher value of the transmission coefficient is more effective for flaw detection. The reflection coefficient should be known in order to measure the attenuation coefficient of the test material.

A Surface Modification of Hastelloy X by Sic Coating and Ion Beam Mixing for Application in Nuclear Hydrogen Production

  • Kim, Jaeun;Park, Jaewon;Kim, Minhwan;Kim, Yongwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.205.2-205.2
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    • 2014
  • The effects of ion beam mixing of a SiC film coated on super alloys (hastelloy X substrates) were studied, aiming at developing highly sustainable materials at above $900^{\circ}C$ in decomposed sulfuric acid gas (SO2/SO3/H2O) channels of a process heat exchanger. The bonding between two dissimilar materials is often problematic, particularly in coating metals with a ceramics protective layer. A strong bonding between SiC and hastelloy X was achieved by mixing the atoms at the interface by an ion-beam: The film was not peeled-off at ${\geq}900^{\circ}C$, confirming excellent adhesion, although the thermal expansion coefficient of hastelloy X is about three times higher than that of SiC. Instead, the SiC film was cracked along the grain boundary of the substrate at above $700^{\circ}C$. At ${\geq}900^{\circ}C$, the film was crystallized forming islands on the substrate so that a considerable part of the substrate surface could be exposed to the corrosive environment. To cover the exposed areas and cracks multiple coating/IBM processes have been developed. An immersion corrosion test in 80% sulfuric acid at $300^{\circ}C$ for 100 h showed that the weight retain rate was gradually increased when increasing the processing time.

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