• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.83-83
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• 2008

Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

• Journal of Electrochemical Science and Technology
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• v.5 no.4
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• pp.115-127
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• 2014

Cd-Pb thin films were electrodeposited from a diluted chloride solution using stainless steel rotating disc electrode. The linear sweep voltammograms of the single metallic ions show that electrodeposition of these ions was mass transfer control due to the plateau observed for different rotations at concentration (50 and 200 ppm). The voltammograms of binary system elucidate that electrodeposition process always start at cathodic potential located between the potential of individual metals. Currents transients measurements, anodic linear sweep voltammetry (ALSV) and atomic force microscopy (AFM) were used to characterize the electrocryatalization process and morphology of thin films. ALSV profiles show a differentiation for the dissolution process of individual metals and binary system. Two peaks of dissolution Cd-Pb film were observed for the binary system with different metal ion concentration ratios. The model of Scharifker and Hills was used to analyze the current transients and it revealed that Cd-Pb electrocrystalization processes at low concentration is governed by three-dimensional progressive nucleation controlled by diffusion, while at higher concentration starts as a progressive nucleation then switch to instantaneous nucleation process. AFM images reveal that Cd-Pb film electrodeposited at low concentration is more roughness than Cd-Pb film electrodeposited at high concentrated solution.

• Tribology and Lubricants
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• v.24 no.2
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• pp.77-81
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• 2008

In this work, ramp loading scratch method was used to evaluate the scratch characteristics of HDD media and ZnO thin films. Commercially available HDD media and ZnO thin films grown on silicon(100) substrate by sol-gel method were used. As for the ZnO films, the effects of annealing temperature after the film deposition process were also investigated. A custom built scratch tester was used to scratch the specimen under a ramp loading condition. The scratch track formed by ramp loading was measured by optical microscope and Atomic Force Microscopy (AFM). The wear depth and width were used to assess the scratch characteristics of the HDD Media and ZnO thin films. The results showed that ZnO film annealed at $800^{\circ}C$ had the best scratch resistance property. Also, the HDD media showed overall better scratch resistance than the ZnO films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.460-464
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• 2003

The barium strontium titannate ((Ba,Sr)TiO$_3$:BST) thin films were etched in an inductively coupled plasma (ICP) as a function of CF$_4$/Ar gas mixing ratio. Under CF$_4$(20%)/Ar(80%), the maximum etch rate of the BST films was 400 $\AA$/min. Etching products were redeposited on the surface of BST and then the nature of crystallinity were varied. Therefore, we investigated the etched surface of BST by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The plasma damages were evaluated in terms of leakage current density by Agilent 4145C and dielectric constant by HP 4192 impedance analyzer. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. After annealing at 600 $^{\circ}C$ for 10 min in $O_2$ ambient, the leakage current density, roughness and nonvolatile etch byproducts reduced. From this results, the plasma induced damages were recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.753-759
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• 1996

The artificial construction of well-defined low-dimensional (low-D) quantum structures, such as quantum wire (QWR) still attracts attention of many researchers due to their applications in room-temperature optoelectronic devices. In this work, the migration enhanced epitaxial growth (MEE) and the analysis of InAs/ AlAs QWR are reported. On the vicinal semi-insulating InP substrate of $3^o$ tilted cut from (100) surface towards (010) direction, InAs/ AlAs QWR superlattices have been successfully grown by MEE with the introduction of growth interruption at each shutter operation of MBE cell. The in-situ RHEED analyses show that MEE gives superior step-flow growth (SFG) and sharper interface formation over a conventional MBE growth. We have grown 4 samples in series varying the growth temperature. The QWR samples are analyzed by photoluminescence (PL) and atomic force microscopy (AFM). From the AFM images, we can get the definitely resolved 1-D structures. This structure is believed to be due to the MEE method and its separation is better than any other data from others. We are now studying the dependence of the structure on the growth temperature.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.264-265
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• 2009

본 연구에서 유도결합 플라즈마 식각 장치외 $BCl_3/Ar/Cl_2$ 가스 혼합비를 이용하여 ZnO 박막을 식각 하였을 때, 식각 된 ZnO 박막의 표면 반응에 관하여 관찰하였다. ZnO 박막의 식각 실험 조건은 RF 전력 700 W, 직류바이어스 전압 - 150 V, 공정 압력 15 mTorr로 고정하였고, $Cl_2/(Cl_2+BCl_3+Ar)$ 가스 혼합비를 변경하면서 식각 실험을 수행하였다. $Cl_2$ 가스가 3 sccm 일 때, ZnO 박막의 식각속도는 53 nm/min으로 가장 높았으며, 이때 ZnO 박막에 대한 $SiO_2$의 선택비는 0.89 이었다. 식각된 ZnO 박막의 표면은 XRD (X-ray diffraction)와 AFM(atomic force microscopy)를 이용하여 결정상의 변화와 표면의 거칠기를 분석하였다. AFM 분석 결과에서 Ar, $BCl_3$와 $Cl_2$ 플라즈마를 이용하여 식각된 시료의 표면 거칠기 근 값이 식각전의 시료나 $BCl_3/Ar/Cl_2$ 플라즈마로 식각된 시료보다 큰 것을 확인하였다. 이는 식각된 시료에서의 Zn 양의 감소나 비휘발성 식각 잔류물에 의한 영향으로 판단된다. SIMS(secondary ion mass spectrometery) 분석을 통해 검증 하였다.

• Journal of the Korean Society for Heat Treatment
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• v.14 no.5
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• pp.292-296
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• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.115-115
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• 2011

최근 유기물을 사용한 유기 태양 전지의 주된 제작 방식은 유기물질을 유기용매에 녹여 사용 하는 스핀코팅 방식이다. 스핀코팅은 박막 형성이 쉽고 대량생산이 용이하다는 장점이 있지만, 표면분석의 측면에서 보면 박막이 한번에 형성되기 때문에 전극 위에 유기물질이 박막을 형성하는 순간의 계면을 측정하기 어렵다. 그에 반해 진공전기분무 방식은 진공에서 얇은 박막에서부터 점차적으로 두께를 늘려가며 증착 할 수 있고 또한 증착이 진공에서 이루어져서 불순물을 최소화 할 수 있기 때문에 표면분석의 측면에서 용이하다. 특히 본 실험에서는 유기 태양전지에서 벌크 이질접합(bulk heterojunction)을 만드는데 널리 쓰이는 물질인 Poly(3-hexythiophene) (P3HT)과 (PCBM)을 toluene에 녹인 후(0.2 mg/ml), 4-5 kV 사이의 전압을 인가하여, 고전압을 걸어 준 뒤 $5{\times}10^{-6}$ torr의 조건에서 분무하여 Indium Tin Oxide (ITO) 위에 박막의 두께를 늘려가며 증착시켰다. 이렇게 ITO 위에 만들어진 P3HT와 PCBM의 박막을 Photoemission spectroscopic (PES)을 이용하여 따른 화학적 구조와 전자구조를 분석하였고, 또한 동일한 농도의 용액으로 스핀코팅 방법을 이용하여 만든 시료와 앞서 언급한 조건의 진공전기분무 방법을 이용하여 만든 시료 사이의 표면거칠기와 morphology는 Atomic Force Microscopy(AFM)을 이용하여 비교 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.61-62
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• 2006

본 연구에서는 대표적인 양친매성분자인 Arachidic acid를 이용하여 박막을 제작하였으며, 층수 변화에 따른 표면이미지와 전압-전류 특성을 측정하였다. Arachidic acid 는 포화지방산으로 ($CH_3(CH_2)_{18}$ COOH)의 구조를 가지며, 크기가 $27.5{\AA}$으로 $CH_3(CH_2)_{18}$의 소수기와 COOH의 친수기로 구성되어 있어, Langmuir-Blodgett (LB) Trough을 사용하여 박막제작과 분자제어가 쉽다. Chloroform을 용매로 하여 2 mmol/l의 농도를 조성하여 ${\pi}$-A 등온선을 통해 기체 상태, 액체 상태, 고체 상태를 관찰하였다. LB 막의 제작 및 평가에서 막의 안정성은 ${\pi}$-A 곡선, AFM(Atomic force microscopy) 등을 통하여 확인하였다. 또한 LB 막을 Metal/유기물 LB막/Metal 구조의 소자로 제작하여 전압-전류 특성을 측정하였다.