• Korean Journal of Materials Research
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• v.14 no.7
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• pp.505-510
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• 2004

The glass-ceramic based on LAS($Li_{2}O-Al_{2}O_3-SiO_{2}$) system was observed using SEM(Scanning Electric Microscopy) and AFM(Atomic Force Microscopy) and it was expected to get a correlation between the crystal size and the surface roughness through the result. At heat treatment conditions (the nucleation: $740\~800^{\circ}C$, the crystal growth: $900\~1150^{\circ}C$), the crystal size was increased from 72 to 450 nm so that the mean of surface roughness was also risen from 0.8 to 6.3 nm. Based on the results, the surface roughness of glass-ceramic is controlled by the factors, crystal size, crystallines, and the condition of heat treatment.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.288-288
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• 2006

Natural rubbers (NR) reinforced by multi-wall carbon nanotubes (MWCNT) was found to show extraordinary improvement of mechanical property. We speculated that this was owing to the interfacial phase that surrounded CNT and investigated about the phase by atomic force microscopy (AFM). Using force modulation mode and force-distance curve analyses, we succeeded in obtaining the information of its nanometer-scale rheological property. We found that was actually surrounded by the interfacial phase, that had softer modulus than NR matrix.

• Korean Chemical Engineering Research
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• v.47 no.4
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• pp.395-402
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• 2009

The atomic force microscopy(AFM) has been used, as a powerful tool, to investigate physical properties of supported-lipid layers. Prior to the advent of the AFM, no observation was performed for the physical phenomena at the nanometer-scale. This microscope provides nanometer-scale morphology by scanning surfaces with the cantilever and presents force curve by monitoring the behavior of the cantilever that approaches to surface and retracts from the surface. From the morphology, the structures of the supported lipid layer and the effect of other molecules on the structures have been investigated. From the force curve, the surface properties-electrostatic and mechanical properties-of the supported lipid layers have been studied. In this article, characterization of the structure and surface properties of the supported lipid layer is explained. Future perspectives and direction are also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.747-751
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• 2010

In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.327-330
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• 2000

The scanning Maxwell-stress microscopy (SMM) is a dynamic noncontact electric force microscopy that allows simultaneous access to the electrical properties of molecular system such as surface potential, surface charge, dielectric constant and conductivity along with the topography. The Scanning near-field optical / atomic force microscopy (SNOAM) is a new tool for surface imaging which was introduced as one application of the atomic force microscope (AFM). Operated with non-contact forces between the optical fiber and sample as well as equipped with the piezoscanners, the instrument reports on surface topology without damaging or modifying the surface for measuring of optical characteristic in the films. We report our recent results of its application to nanoscopic study of domain structures and electrical functionality in organic thin films by SMM. Furthermore, we have illustrated the SNOAM image in obtaining the merocyanine dye films as well as the optical image.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.581-584
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• 1998

TiN thin films were grown on (100) Si substrate by atomic layer epitaxy at 130 - $240^{\circ}C$ using TEMAT and NH3 as precursors. Reactants were injected into the reactor in sequence of TEMAT precursor vapor pulse, N2 purging gas pulse, NH3 gas pulse and N2 purging gas pulse so that gas-phase reactions could be removed. The films were characterized by means of x-ray diffraction(XRD), 4-point probe, atomic force microscopy(AFM) and auger electron spectroscopy(AES).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.430-430
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• 2011

Graphene, one single atomic layer of graphite, has attracted extensive attention in various research fields since its first isolation from graphite. Application in the future electronics requires better understanding and manipulation of electronic properties of graphene supported on various solid substrates. Here, we present a study on charge doping and morphology of graphene prepared on atomically flat and highly polar mica substrates. Ultra-flat single-layer graphene was prepared by micro-exfoliation of graphite followed by deposition on cleaved mica substrates. Atomic force microscopy (AFM) revealed presence of ultra-thin water films formed in a layer-by-layer manner between graphene and mica substrates. Raman spectroscopy showed that a few angstrom-thick water films efficiently block electron transfer from graphene to mica. Hole doping in graphene caused by underlying mica substrates was also visualized by scanning Kelvin probe microscopy (SKPM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• Polymer(Korea)
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• v.31 no.1
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• pp.31-36
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• 2007

It has been reported that the surface properties of the plasma treated material were changed while maintaining its bulk properties. In this study, surface modification of nylon fiber by plasma treatment was tried to attain high water-repellency Nylon fiber was treated with RF plasma under a vacuum system using various parameters such as gas specious, processing time and processing power. Morphological changes by low pressure plasma treatment were observed using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Moreover, the mechanical and inherent properties were analyzed by tensile strength, differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). The high water-repellency property of nylon fiber was evaluated by a water-drop standard test under various conditions in terms of aging effect. The results showed that the water-repellency of plasma-surface-treated nylon fiber was greatly improved compared to untreated nylon fiber.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1649-1650
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• 2006

반도체 소자의 선폭이 나노미터 스케일로 진입함에 따라 소자의 물리적 특성을 나노미터 스케일에서 정밀하게 측정하고자 하는 요구가 증대되고 있다. Atomic Force Microscopy (AFM)은 나노미터 이하의 해상도를 가지고 물질 표면의 기하하적, 전기적 특성 등을 측정할 수 있으므로 나노소자 연구에 필수적인 도구가 되었다. 그러나 AFM은 낮은 측정속도와 탐침의 기하학적 형상에 의한 AFM 영상의 왜곡 등과 같은 치명적인 단점도 가지고 있다. AFM의 낮은 측정 속도를 개선하기 위해서 진보된 마이크로머시닝기술을 이용하여 캔틸레버의 크기를 줄이거나 캔틸레버 위에 박막 구동기를 집적시키는 등의 노력이 진행되고 있으나, 이 경우 전통적인 식각 공정을 이용하여 캔틸레버 위에 tip을 형성하는 것이 매우 어렵다. 본 연구에서는 이미 제작된 캔틸레버 위에 전자빔 조사법을 이용하여 탄소상 tip을 직접 성장시킴으로써 전통적인 식각 공정에 비해 매우 간단하고 값싸며, 활용도가 높은 공정을 개발하였다. 탄소상 tip 성장에 필요한 탄소 소스는 dipping 방법을 이용하여 공급하였고, 시분할법을 사용하여 캔틸레버의 원하는 위치에 tip을 성장시킬 수 있었다. 이렇게 제작된 tip은 최대 $5{\mu}m$ 높이까지 가능했으며, 종횡비는 10:1 이상이어서 tip의 형상에 의한 AFM 영상 왜곡 현상을 최소화할 수 있을 것으로 기대된다.