• 제목/요약/키워드: Atomic and electron cross-section

검색결과 14건 처리시간 0.023초

저압 수은 방전에서의 근사화한 충돌 단면적을 사용한 전자 에너지 분포함수 해석 (The analysis of electron energy distribution function using the approximated collision cross section in the low-pressure mercury discharge)

  • 류명선;이진우;지철근
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 1989년도 추계학술발표회논문집
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    • pp.19-24
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    • 1989
  • The electron energy distribution function in mercury discharge positive columns are calculated numerically from the Boltzmann eqation under a set of parameters, such as the electron temperature to. the atomic temperature Tw. the electron number density no. and the electric field E. Especially, using the approximation that collision cross sections only depend on the energy, the calculated electron energy distribution function was shown that it falls off rapidly in the high energy tail.

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MATRIX ELEMENTS AND CROSS SECTION OF RAMAN SCATTERING BY ATOMIC HYDROGEN

  • 이희원
    • 천문학논총
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    • 제22권1호
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    • pp.21-33
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    • 2007
  • Ever since the identification of 6830 and 7088 features as the Raman scattered O VI 1032, 1038 resonance doublets in symbiotic stars by Schmid (1989), Raman scattering by atomic hydrogen has been a very unique tool to investigate the mass transfer processes in symbiotic stars. Discovery of Raman scattered He II in young planetary nebulae (NGC 7027, NGC 6302, IC 5117) allow one to expect that Raman scattering can be an extremely useful tool to look into the mass loss processes in these objects. Because hydrogen is a single electron atom, their wavefunctions are known in closed form, so that exact calculations of cross sections are feasible. In this paper, I review some basic properties of Raman scattered features and present detailed and explicit matrix elements for computation of the scattering cross section of radiation with atomic hydrogen. Some astrophysical objects for which Raman scattering may be observationally pertinent are briefly mentioned.

An investigation of the nuclear shielding effectiveness of some transparent glasses manufactured from natural quartz doped lead cations

  • Kassem, Said M.;Ahmed, G.S.M.;Rashad, A.M.;Salem, S.M.;Ebraheem, S.;Mostafa, A.G.
    • Nuclear Engineering and Technology
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    • 제53권6호
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    • pp.2025-2037
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    • 2021
  • The influence of lead cations on natural quartz (QZ) from Egypt as a glass shielding material for the composition with nominal formula (10Na2O - (90 - x) QZ - xPbO (where x = 30, 35, 40, 45 and 50 mol %)) was examined. The studied samples are synthesized via the melt quenching method at 1050 ℃. The X-ray diffraction XRD patterns were confirmed the glass nature for studied samples. Moreover, the optical properties, and the transparency for all compositions were examined by UV-Vis spectroscopy. Also, the major elemental composition of the natural quartz were estimated via the X-ray fluorescence (XRF) technique. Further, the density and molar volume were determined. Furthermore, the nuclear shielding parameters such as, mass attenuation coefficient, effective atomic number, electronic density, the total atomic, and electronic cross sections as well as the mean free path, and the half value layer with different gamma ray energies (81 keV-1407 keV) were calculated. Besides, the results showed that the shielding behavior towards the gamma ray radiation for all glass samples was increased as the increment in PbO concentration in the glass system.

Thermal-annealing behavior of in-core neutron-irradiated epitaxial 4H-SiC

  • Junesic Park ;Byung-Gun Park;Gwang-Min Sun
    • Nuclear Engineering and Technology
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    • 제55권1호
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    • pp.209-214
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    • 2023
  • The effect of thermal annealing on defect recovery of in-core neutron-irradiated 4H-SiC was investigated. Au/SiC Schottky diodes were manufactured using a 4H-SiC epitaxial wafer that was neutron-irradiated at the HANARO research reactor. The electrical characteristics of their epitaxial layers were analyzed under various conditions, including different neutron fluences (1.3 × 1017 and 2.7 × 1017 neutrons/cm2) and annealing times (up to 2 h at 1700 ℃). Capacity-voltage measurements showed high carrier compensation in the neutron-irradiated samples and a recovery tendency that increased with annealing time. The carrier density could be recovered up to 77% of the bare sample. Deep-level-transient spectroscopy revealed intrinsic defects of 4H-SiC with energy levels 0.47 and 0.68 eV below the conduction-band edge, which were significantly increased by in-core neutron irradiation. A previously unknown defect with a high electron-capture cross-section was discovered at 0.36 eV below the conduction-band edge. All defect concentrations decreased with 1700 ℃ annealing; the decrease was faster when the defect level was shallow.

플렉시블 디스플레이 응용을 위한 폴리아릴레이트 기판의 식각 특성 (Dry Etching Properties of PAR (poly-arylate) Substrate for Flexible Display Application)

  • 황진호
    • 한국전기전자재료학회논문지
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    • 제29권12호
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    • pp.824-828
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    • 2016
  • In this study, effects of ICP (inductively coupled plasma) treatment on PAR thin film have been investigated. A maximum etch rate of the PAR thin films and the selectivity of PAR to PR were obtained as 110 nm/minand 1.1 in the $CF_4/O_2$ (5:15 sccm) gas mixture. We present the surface properties of PAR thin film with various treatment conditions. The surface morphology and cross section of the PAR thin film was observed by AFM (atomic force microscopy) and FE-SEM (filed emission scanning electron microscopy).

다이아몬드상 카본박막의 펄스레이저 증착법 연구 (A Study on the Pulsed Laser Deposition of Diamond like Carbon Thin Films)

  • 심경석;이상렬
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권6호
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    • pp.403-409
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    • 1999
  • We fabricated diamond like carbon (DLC) thin films using pulsed laser deposition (PLD) method. Among many deposition parameters, the effects of the deposition temperature and the laser energy density were investigated. Structural properties of the films were studied by Raman spectroscopy. The surface morphologies and cross-section imagies of the films were investigated by atomic force microscopy (AFM) and scanning electron microscopy (SEM) respctively. DLC thin films fabricated at $12 J/cm^2$ of a laser energy density and $300^{\circ}C$ of a deposition temperature showed the best quality.

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Electrical Breakdown in Flames

  • Han, S.Uhm
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.187-187
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    • 2000
  • Properties of electrical discharge in flames are investigated by making use of the ionization cross section of air. Fames have three distictive features. They are hot, emit light and are weakly ionized. We investigate influence of these three characteristics of flames on the electrical breakdown. It is found that the breakdown electric field in flames is inversely proportional to the flame temperature, thereby easily generating plasmas in flames. A swarm of low-energy electrons in flames would allow significant population of electronically excited states of flame molecules to be formed. Therefore, the analysis shows that the electronic excitation of flame molecules may also considerably reduce the breakdown field. Plasma electrons generate atomic oxygens by the electron attachment of oxygen molecules in high-pressure flames. These oxygen atoms are the most reactive radicals in flames for material oxidation. How are you and your family in this new year\ulcorner Professor Choi! I plan to go back Korea on February 6. All my family members are fine and have good time because I am here. Once I am in Korea, I will call you. I am always grateful for your helpful hand. Thank you so much.

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Electrical Breakdown In flames

  • Uhm, Han S.
    • Journal of Korean Vacuum Science & Technology
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    • 제4권1호
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    • pp.33-37
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    • 2000
  • Properties of electrical discharge in flames and influence of plasma electrons on gas neutrals are investigated by making use of the ionization cross section of air. Frames have three distinctive features. They are hot, emit light and are weakly ionized. We investigate influence of these three characteristics of flames on the electrical breakdown. It is found that the breakdown electric field in flames is inversely proportional to the flame temperature T$\_$g/, thereby easily generating plasmas in flames. A swarm of low-energy electrons in flames would allow a significant population of electronically excited states of flame molecules to be formed. Therefore, the analysis shows that the electronic excitation of flame molecules may also considerably reduce the breakdown field. Plasma electrons generate atomic oxygen by the electron attachment of oxygen molecules in high-pressure flames. These oxygen atoms are the most reactive radicals in flames for material oxidation.

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Broad Wings around Hα and Hβ in the S-type Symbiotic Stars

  • Chang, Seok-Jun;Lee, Hee-Won;Lee, Ho-Gyu
    • 천문학회보
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    • 제42권2호
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    • pp.86.4-87
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    • 2017
  • Symbiotic stars are binary systems composed of a hot white dwarf and a mass losing giant. Many symbiotic stars are known to exhibit broad wings around Balmer emission line. We show high resolution spectra of S-type symbiotic stars, Z Andromedae and AG Draconis, obtained with the ESPaDOnS and the 3.6 m Canada-France-Hawaii Telescope, in which we find prominent broad wings around Balmer lines. We adopt Monte-Carlo technique to consider two types of wing formation mechanisms, which are Thomson scattering by free electron in H II region and Raman scattering by atomic hydrogen in H I region. We find that Thomson wings of $H{\alpha}$ and $H{\beta}$ have the same widths in the Doppler space due to the cross section independent of wavelength. In contrast, Raman $H{\alpha}$ wings are 3 times broader widths than $H{\beta}$ counterparts, which is attributed to the different cross sections and branching ratios. Our CFHT data show that $H{\alpha}$ wings of Z Andromedae and AG Draconis are broader than $H{\beta}$ wings, lending strong support to the Raman scattering origin of Balmer wings in these objects.

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Electronic and Optical Properties of amorphous and crystalline Tantalum Oxide Thin Films on Si (100)

  • Kim, K.R.;Tahir, D.;Seul, Son-Lee;Choi, E.H.;Oh, S.K.;Kang, H.J.;Yang, D.S.;Heo, S.;Park, J.C.;Chung, J.G.;Lee, J.C.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.382-382
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    • 2010
  • $TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

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