• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.12
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• pp.184-190
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• 2009

Tri-acetyl-cellulose(TAC) film surface was modified by atmospheric-pressure plasma technique to obtain the hydrophilic functional groups and improve the contact angle. TAC film was modified with N2 plasma ionized in dielectric barrier discharge(DBD) reactor under atmospheric pressure. We measured the change of the contact angle and the surface energy with respect to the plasma treatment conditions such as plasma treatment power, discharge gap and Ｎ2 gas flow rate. As the plasma treatment speed of 100[mm/sec], the plasma treatment power of 1.5[kW], discharge gap 2[mm] and the $N_2$ gas flow rate 140[LPM], the best contact angle and the highest surface energy were obtained. The degree of hydrophilization depended strongly on the plasma-treating time and discharge power.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.494-494
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• 2013

Atmospheric pressure non-thermal plasma of the needle-typed interaction with aqueous solutions has received increasing attention for their biomedical applications [1]. In this context, surface discharges at bio-solutions were investigated experimentally. We have generated the non-thermal plasma jet bombarding the bio-solution surface by using an Ar gas flow and investigated the emission lines by OES (optical emission spectroscopy) [2]. Moreover, The non-thermal plasma interaction with bio-solutions has received increasing attention for their biomedical applications. So we researched, the OH radical density of various biological solutions in the surface by non-thermal plasma were investigated by Ar gases. The OH radical density of DI water; deionized water, DMEM Dulbecco's modified eagle medium, and PBS; 1x phosphate buffered saline by non-thermal plasma jet. It is noted that the OH radical density of DI water and DMEM are measured to be about $4.33{\times}1016cm-3$ and $2.18{\times}1016cm-3$, respectively, under Ar gas flow 250 sccm (standard cubic centimeter per minute) in this experiment. The OH radical density of buffer solution such as PBS has also been investigated and measured to be value of about $2.18{\times}1016cm-3$ by the ultraviolet optical absorption spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.141-141
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• 2013

We have generated the needle-typed nonthermal plasma jet by using an Ar gas flow at atmospheric pressure. Diagnostics of electron temperature anddensity is critical factors in optimization of the atmospheric plasma jet source in accordance with the gas flow rate. We have investigated the electron temperature and density of plasma jet by selecting the four metastable Ar emission lines based on the atmospheric collisional radiative model and radial profile characteristics of current density, respectively. The averaged electron temperature and electron density for this plasma jet are found to be ~1.6 eV and ~$3.2{\times}10^{12}cm^{-3}$, respectively, in this experiment. The densities of OH radical species inside the various bio-solutions are found to be higher by about 4~9 times than those on the surface when the argon bioplasma jet has been bombarded onto the bio-solution surface. The densities of the OH radicalspecies inside the DI water, DMEM, and PBS are measured to be about $4.3{\times}10^{16}cm^{-3}$, $2.2{\times}10^{16}cm^{-3}$, and $2.1{\times}10^{16}cm^{-3}$, respectively, at 2 mm downstream from the surface under optimized Ar gas flow 250 sccm.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.337-345
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• 2009

When the drill hole diameter for the package substrate is under $100{\mu}m$, the smear in the drill hole cannot be eliminated by wet desmear process only. We intended to change the substrate's hydrophobic characteristics to hydrophilic characteristics by adapting the atmospheric pressure plasma prior to the wet desmear process. Atmospheric pressure plasma process was made as the inline type equipment which is adequate for the package substrate's manufacturing process and remote DBD type electrodes were used for the equipment. As the result of atmospheric pressure plasma processing, the contact angle of the substrate was enhanced from 71 degree to 30 degree. Dielectric film thickness, drill hole diameter and surface roughness were measured to evaluated the characteristics of the wet desmear process in case of plasma processing and in case of none. By the measurement, it was analyzed that the process uniformity within the whole panel was largely enhanced. Also, it was verified that the smear in the drill hole was eliminated efficiently which was analyzed by the SEM image of the drill hole.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.120-123
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• 2014

Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer's structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• Journal of Surface Science and Engineering
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• v.47 no.5
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

• Applied Science and Convergence Technology
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• v.27 no.2
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• pp.23-25
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• 2018

With respect to the electrode structure and the discharge characteristics, the atmospheric pressure plasma sheet of a thin polyimide film is introduced in this study; here, the flexible plasma device of a dielectric-barrier discharge with the ground electrode and the high-voltage electrode formulated on each surface of a polyimide film whose thickness is approximately $100{\mu}m$, that is operated with a sinusoidal voltage at a frequency of 25 kHz and a low voltage from 1 kV to 2 kV is used. The streamer discharge is appeared along the cross-sectional boundary line between two electrodes at the ignition stage, and the plasma is diffused on the dielectric-layer surface over the high-voltage electrode. In the development of a plasma sheet with thin dielectric films, the avoidance of the insulation breakdown and the reduction of the leakage current have a direct influence on the low-voltage operation.

• Applied Chemistry for Engineering
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• v.33 no.2
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• pp.229-233
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• 2022

In this study, a gas-liquid hybrid atmospheric pressure plasma reactor of the dielectric barrier discharge method was fabricated and characterized. The solubility of copper oxide in the organic acid solution was increased when argon having a larger atomic weight than helium was used during plasma discharge. There was no significant effect of mixing organic acid solutions under plasma discharge treatment on the variation of copper oxide's solubility. As the applied voltage for plasma discharge and the concentration of the organic acid solution increased, the dissolution and removal power of the copper oxide layer increased. Solubility of copper oxide was more affected by the concentration in organic acid solution rather than the variation of plasma applied voltage. The usefulness of hybrid plasma reactor for the surface cleaning process was confirmed.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.2
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• pp.77-83
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• 2013

In this study, we aimed to determine the optical properties of the plasma used for the dry cleaning method. The optical properties of the atmospheric pressure plasma device were measured through the degree of ionization of hydrogen or nitrogen gas by ionized atmospheric gas. The degree of ionization of hydrogen or nitrogen is closely associated with surface modification. We observed through our experiments that argon gas, an atmospheric gas, caused an increase in the ionization of nitrogen gas, which has similar ionization energy. This type of increase in nitrogen gas ions is believed to affect surface modification. The results of our study show that the pressure of argon gas and the partial pressure of argon and nitrogen gases lead to different results. This important result shows that argon ions can affect the ionization of nitrogen gas.

• International Journal of Precision Engineering and Manufacturing
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• v.9 no.2
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• pp.39-43
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• 2008

Atmospheric pressure plasma polishing (APPP) is a noncontact precision machining technology that uses low temperature plasma chemical reactions to perform atom-scale material removal. APPP is a complicated process, which is affected by many factors. Through a preliminary theoretical analysis and simulation, we confirmed that some of the key factors are the radio frequency (RF) power, the working distance, and the gas ratio. We studied the influence of the RF power and gas ratio on the removal rate using atomic emission spectroscopy, and determined the removal profiles in actual operation using a commercial form talysurf. The experimental results agreed closely with the theoretical simulations and confirmed the effect of the working distance. Finally, we determined the element compositions of the machined surfaces under different gas ratios using X-ray photoelectron spectroscopy to study the influence of the gas ratio in more detail. We achieved a surface roughness of Ra 0.6 nm on silicon wafers with a peak removal rate of approximately 32 $mm^{3}$/min.