• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.479-486
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• 1989

According to the phase diagram, 6Bi2O3.GeO2 composition melts congruently at 93$0^{\circ}C$ and forms a stable ${\gamma}$-6Bi2O3.GeO2 crystal phase below the melting point. But when the melt of this composition was cooled at a rate 1-15$0^{\circ}C$/min without tapping by a glass rod or impurity addition, a metastable $\delta$-6Bi2O3.GeO2 crystal phase was formed. It is due to that as the nucleation energy barrier of $\delta$-6Bi2O3.GeO2 crystals, which have more open and defective structure, is lower than that of ${\gamma}$-6Bi2O3.GeO2 crystals. When impurities or ${\gamma}$-6Bi2O3.GeO2 crystals existed in the melt, stable ${\gamma}$-6Bi2O3.GeO2 crystal phase was formed at various cooling rate. It is because of that the impurities or the ${\gamma}$-6Bi2O3.GeO2 crystals role as a seed crystal and as a result the nucleation energy barrier of ${\gamma}$-6Bi2O3.GeO2 crystals is lowered.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.33.2-33.2
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• 2009

Dielectric and piezoelectric properties of Lead-free $(1-x)(Bi_{0.5}K_{0.5})TiO_3-xBiFeO_3$ceramics prepared by a conventional solid state reaction method were investigated in the range of x = 0~10 mol%. Piezoelectric coefficient was increased from 31 pC/N at x = 0 mol% to 64 pC/N at x = 6 mol% then decreased with increasing x. Electromechanical coupling factor ($K_p$) was increased up to 0.18 at x = 10 mol%. On the other hand, mechanical quality factor ($Q_m$) was decreased. Grain size was not much changed with various x and a single perovskite with tetragonal symmetry was maintained at all compositions forming a solid solution between $(Bi_{0.5}K_{0.5})TiO_3$ and $BiFeO_3$. Depolarization temperature ($T_d$) was gradually decreased with increasing x from $302^{\circ}C$ at x = 0 to $245^{\circ}C$ at x = 10 mol%.

• Journal of the Mineralogical Society of Korea
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• v.13 no.1
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• pp.44-52
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• 2000

천연에서 발견되는 geversite (PtSb2), stumpflite (PtSb), insizwaite (PtBi2), unnamed PtBi 등의 광물에 대한 안정영역과 원소치환에 따른 고용체 존재를 규명하기 위해 백금-안티모니-비스머스 등 3성분계에 대한 합성실험적 연구를 실시하였다. 이번 연구에서 설정된 $600^{\circ}C$ 온도의 실험결과에 의하면, 등축정계의 geversite와 insizwaite 사이에 완전고용체가 형성되며, Sb를 치환하는 Bi의 함량에 따라 단위포 상수는 6.4415(0 at.%), 6.4361(15 at.%), 6.5204(30 at.%), 6.5411(51 at.%), 6.6261(70 at%), 6.6540(85 at%), 6.728$\AA$(100 at.%)로 증가함을 알 수 있었다. 육방정계인 stumpflite와 unnamed PtBi 사이에도 완전고용체가 형성되며, Sb를 치환하는 Bi의 함량이 증가함에 따라 a 단위포 상수의 크기는 4.1388(0 at.%), 4.2118(20 at.%), 4.2118(40 at.%), 4.2485(80 at.%), 4.3242$\AA$(100 at.%)등 연속적으로 증가하지만, c 단위포 상수는 각각 5.4902, 5.4799, 5.508, 5.4817, 5.5045$\AA$등 불규칙하게 변함을 알 수 있었다. 0~33.33 at.% Pt 영역에서의 상평형 관계는 액체가 Pt(Sb,Bi)2 고용체와 공존하고 있고, Sb가 많이 함유된 액체에서는 geversite+원소광물 안티모니+백금이 거의 함유되지 않은 액체와 공생하는 3-phase assemblage를 형성한다. 자연계에서는 geversite와 insizwaite 및 stumpflite와 unnamed PtBi 사이의 화학조성을 가지는 광물이 발견되고 있는데, 이들은 각각 독립적인 광물종이 아니라 위 광물들의 고용체에 속하는 것임을 알 수 있었다. 이들 광물을 명명하고 해석하는데 매우 세심한 주의가 필요함을 알 수 있었다. 또한 단위포 상수를 측정을 통해 해당 고용체 광물의 Sb↔Bi 치환 양을 추정할 수 있다는 점과 광물 공생관계를 통해 생성온도를 추정할 수 있다는 사실을 알 수 있었다.

• Journal of IKEEE
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• v.25 no.1
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• pp.64-68
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• 2021

We demonstrate an effect of annealing temperature on imprinting process of BiLaO thin film for liquid crystal alignment. BiLaO prepared sol-gel process was deposited by spin coating on a glass substrate, and then transferred to a pre-fabricated aligned pattern which is fabricated on a silicon wafer by laser interference lithography. Thin film was annealed at different temperature of 100, 150, 200, and 250 ℃. From the polarized optical microscopy analysis, the liquid crystal orientation was not uniform at the annealing temperature of 200 ℃ or lower and the uniform liquid crystal alignment characteristics were confirmed at the annealing temperature of 250 ℃. From atomic force microscopy, the pattern was not transferred at a temperature of 200 ℃ or lower. In contrast, the pattern was transferred at 250 ℃. Anisotropy of the thin film was obtained by the alignment pattern transferred at a temperature of 250 ℃, and the liquid crystal molecules could be evenly oriented on the thin film. Therefore, it was confirmed that the liquid crystal alignment process by the imprinting process of the BiLaO oxide film was affected by the annealing temperature.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.290-293
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• 2001

The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

• Journal of Korea Foundry Society
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• v.21 no.4
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• pp.239-245
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• 2001

Microstructure and mechanical properties of Sn-3.1 wt.%Ag-6.9 wt.%Bi system solders on Cu-substrate were studied. The Sn3.1 wt.%Ag-6.9 wt.%Bi alloy was designed by phase diagram and chemical properties and was prepared by melting in argon atmosphere. The mechanical properties of solder/Cu joints were examined by shear strength test, and also creep test. The microstructure of Sn-3.1 wt.%Ag-6.9 wt.%Bi alloy consists of Bi-rich phase and $Ag_3Sn$ precipitate in {\beta}-Sn$ matrix phase. The shear strength of the joint was decreased with aging treatment. Crack path under shear test was through the solder. Similar crack path change mode was observed at the creep test of solder/Cu joint. The creep behavior of Sn-3.1 wt.%Ag-6.9 wt.%Bi alloy represented the inverse primary creep behavior at all test condition. It is suggested that the inverse primary creep behavior is induced from Bi solute atoms in Sn-matrix. The creep resistance of Sn-3.1Ag-6.9Bi alloy is better than that of Sn-3.5 wt.%Ag alloy at all test conditions.

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.155-158
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• 2014

The phase transformation of Sn-Pb-Bi solder for photovoltaic ribbon during soldering was studied using real-time synchrotron x-ray scattering. At room temperature, Sn and Pb crystal phases in the solder existed separately. By heating to $92^{\circ}C$, a new PbBi alloy crystal phase was formed, which grew further up to $160^{\circ}C$. The Sn crystal phase first started to melt at $160^{\circ}C$, and was mostly melted at $165^{\circ}C$. In contrast, the Pb and PbBi crystal phases started to melt at $165^{\circ}C$, and were mostly melted at $170^{\circ}C$. The useful result was obtained, that the solder's melting temperature decreased from $183^{\circ}C$ to $170^{\circ}C$ by addition of a small amount of Bi atoms to the eutectic Sn62-Pb38 (wt%) solder. Our study first revealed the detailed in-situ phase transformation of Sn-Pb-Bi solder during heating to the eutectic temperature. Considering the results of peel strength and hardness, adding 1 wt% of Bi atoms to the Sn62-Pb38 (wt%) solder produced an appropriate composition.

• Korean Journal of Materials Research
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• v.17 no.3
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• pp.147-151
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• 2007

Cu-free multi-component sol, of which final oxide composition becomes $Bi_{1.9}Pb{0.35}SrCaO,\;Bi_{1.8}Pb_{0.2}SrCaO\;and\;Bi_{1.5}SrCaO$, respectively, was prepared through sol-gel route and coated on a bare Cu substrate. Starting materials were metal-alkoxides as follows.; [$Bi(OC_{2}H_{5})_{3}\;Pb(O^{1}C_{3}H_{7})_{2},\;Sr(O^{i}C_{3}H_{7})_{2},\;Ca(OC_{2}H_{5})_{2}$] as a reagent grade. Transparent light yellowish sol was obtained in the case of $Bi_{1.9}Pb_{0.35}SrCaO\;and\;Bi_{1.8}Pb_{0.2}SrCaO$ composition and $Bi_{1.5}SrCaO$ composition's sol was light greenish. Each sol was repeatedly dip-coated on Cu substrate four times and pre-heated at $400^{\circ}C$ and finally heat-treated in the range of $740{\sim}900^{\circ}C$. In the results, crystalline phases confirmed by XRD were (2201) orthorhombic and monoclinic phases. However, only $Bi_{1.9}Pb_{0.35}SrCaO_{x}$ composition showed pseudo-superconductive behavior after heat-treatment at $900^{\circ}C$ for 12 seconds and then onset temperature was 77 K, even though it did not exhibit zero resistance below Tc.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.94-98
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• 2003

The microstructure of Sn1.8Bi0.8Cu0.6In alloys was evaluated at various aging time. The bumps of Sn1.8Bi0.8Cu0.6In alloys after reflowed at $250^{\circ}C$ were well-formed and had 260um height. The craters on the bumps, however, were observed. Intermetallic compounds formed on the interface between so]der and Cu/Ni UBM were consist of $(Cu,Ni)_6Sn_5$. As aging goes on up to 1000hours, the composition of Ni changed from $6.63\%$ at initial stage(as-reflowed) to $13.47\%$ at final stage(1000hours aging ). In addition, after 500hours aging, the floating of IMC to the solder was observed.