• Progress in Superconductivity
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• 제8권1호
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• pp.104-107
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• 2006

For the practical application on SCFCL(Superconducting fault current limiters), Bi-2212 tubes were fabricated by Centrifugal Forming Process(CFP). The tubes were annealed at 830, 840, $850^{\circ}C$, respectively for 80 hours in oxygen atmosphere. The tubes heat treated at $840^{\circ}C$ demonstrated better electric characteristics than the tubes heat treated at 830 and $850^{\circ}C$. The typical value measured at 77 K in the self field was around 556 A. In terms of cooling effect on superconducting properties, it was found the electrical properties were quite dependent on the mold design and shapes. In order to check uniformity along the tube, EFDLab fur heat and fluid analysis of NIKA was adopted. It was found out that the simulation data was quite well matched with experimental results.

• 한국전기전자재료학회논문지
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• 제15권3호
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• pp.220-226
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• 2002

Amorphous $Sb_{2-x}Bi_xTe_3$ (x = 0.0, 0.5 and 1.0) thin films were prepared by vacuum evaporation. The resistivity of 7he films decreases from 1.4{\times}10^{-2}$ to $8.84{\times}10^{-5}\Omega cm$ and the type of conductivity changes from p to n with the increase of the x value of the films. D.C. conduction studies on these films ate performed at various electric fields in the temperature range of 303-403 K. At low electric fields, two types of conduction mechanisms, i.e. the variable range hopping and the phonon assisted hopping are found to be responsible for the conduction, depending upon the temperature. The activation energy decreases from 0.082 to 0.076 eV in the temperature range of 303-363 K and from 0.47-0.456 eV in the second range of 363-403 K, indicating the shift of the Fermi level towards the conduction band edge and hence the change of the conduction from P to n type with the increase of the Bi concentration. Poole-Frankel emission dominates at high fields. The shape of the potential well of the localized centre is deduced and the mean free path of the charge carriers is also calculated.

• Applied Microscopy
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• 제47권3호
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• pp.110-120
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• 2017

Non-isothermal thermogravimetry (TG) measurements on melt-quenched $Bi_xSe_{100-x}$ specimens (x=0, 2.5, 7.5 at%) were made at a heating rate ${\beta}=10^{\circ}C/min$ in the range $T=35^{\circ}C{\sim}950^{\circ}C$. The as-measured TG curves confirm that $Bi_xSe_{100-x}$ samples were thermally stable with minor loss at $T{\leq}400^{\circ}C$ and mass loss starts to decrease up to $600^{\circ}C$, beyond which trivial mass loss was observed. These TG curves were used to estimate molar (Se/Bi)-ratios of $Bi_xSe_{100-x}$ samples, which were not in accordance with initial composition. Shaping features of conversion curves ${\alpha}(T)-T$ of $Bi_xSe_{100-x}$ samples combined with a reliable flow chart were used to reduce kinetic mechanisms that would have caused their thermal mass loss to few nth-order reaction models of the form $f[{\alpha}(T)]{\propto}[1-{\alpha}(T)]^n$ (n=1/2, 2/3, and 1). The constructed ${\alpha}(T)-T$ and $(d{\alpha}(T)/dT)-T$ curves were analyzed using Coats-Redfern (CR) and Achar-Brindley-Sharp (ABS) kinetic formulas on basis of these model functions, but the linearity of attained plots were good in a limited ${\alpha}(T)-region$. The applicability of CR and ABS methods, with model function of kinetic reaction mechanism R0 (n=0), was notable as they gave best linear fits over much broader ${\alpha}(T)-range$.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.941-948
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• 2009

The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

• 방사성폐기물학회지
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• 제20권1호
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• pp.33-41
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• 2022

Liquid Bi pool is a candidate electrode for an electrometallurgical process in the molten LiCl-KCl eutectic to treat the spent nuclear fuels from nuclear power plants. The electrochemical behavior of Bi³⁺ ions and the electrode reaction on liquid Bi pool were investigated with the cyclic voltammetry in an environment with or without BiCl₃ in the molten LiCl-KCl eutectic. Experimental results showed that two redox reactions of Bi³⁺ on inert W electrode and the shift of cathodic peak potentials of Li⁺ and Bi³⁺ on liquid Bi pool electrode in molten LiCl-KCl eutectic. It is confirmed that the redox reaction of lithium with respect to the liquid Bi pool electrode would occur in a wide range of potentials in molten LiCl-KCl eutectic. The obtained data will be used to design the electrometallurgical process for treating actinide and lanthanide from the spent nuclear fuels and to understand the electrochemical reactions of actinide and lanthanide at liquid Bi pool electrode in the molten LiCl-KCl eutectic.

• 한국초전도ㆍ저온공학회논문지
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• 제26권1호
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• pp.10-13
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• 2024

We performed angle-resolved Raman spectroscopy experiments on lead-doped and undoped Bi₂Sr₂CaCu₂O_8+δ(Bi2212) samples using a 660 nm laser and analyzed the Raman tensor of the phonon modes. The phonon mode was clearly observed at the 60, 103, and 630 cm^-1 Raman shifts. The 60, 630 cm^-1 peaks were only clearly observed when the incident and scattered light polarizations were configured to be parallel. The polarization angle dependence of the amplitude of the 60, 630 cm^-1 peak on the parallel configuration shows a twofold symmetry; therefore, both peaks originate from Ag phonons and the crystal structure of Bi2212 should be considered orthorhombic. On the other hand, the 103 cm^-1 peak is clearly observed in both parallel and perpendicular configurations. Remarkably, the off-diagonal component of the Raman tensor of the 103 cm^-1 peak showed an anti-symmetry that could not be realized within the known crystal structure of Bi2212. The implications of our findings are discussed.

• 한국재료학회지
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• 제14권10호
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.

• 한국산학기술학회논문지
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• 제8권5호
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• pp.995-999
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• 2007

저온 소결용 압전 세라믹 소결체의 치밀화에 미치는 첨가제의 영향을 조사하기 위하여 $PbZrTiO_3$(PZT) 분말을 제조하였으며, 이 PZT 분말을 이용하여 제조한 압전 세라믹스의 치밀화에 미치는 첨가제의 영향을 조사하였다. 첨가제는 $wB_2O_3-xBi_2O_3-zCuO$와 $LiBiO_2-CuO$ 두 종류가 제조되었으며 이 들 첨가제의 양을 변화 시켜 효과를 조사하였다. PZT 분말에 소결조제로서 1wt.% 의 $LiBiO_2-CuO$를 첨가하여 시편을 제조한 후, $800{\sim}1200^{\circ}C$까지의 온도 범위에서에서 소결한 결과 $900^{\circ}C$에서 최고의 소결밀도를 나타내었다. 소결된 압전체의 결정상을 분석하기 위하여 X-선회절분석을 시행하였으며, $900^{\circ}C$의 저온에서 소결한 $PbZrTiO_3$의 시편의 미세조직을 관찰하기 위하여 주사전자현미경(SEM)을 이용하였다. X-선 회절분석에서는 잘 발달된 PZT 상이 나타났으며, SEM 관찰 결과 평균입경은 $2{\sim}4\;{\mu}m$의 페로브스카이트 결정으로 균일하고 치밀한 조직을 나타내었으며, 높은 소결성은 첨가제에 의한 액상소결에 기인한다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.68-71
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• 2003

The reaction of ultra-small eutectic 58Bl-42Sn solder bump with Au/Ni/Ti and Au/Cu/Ti UBMs during reflow was studied. The eutectic Bi-Sn solder bumps of $46{\mu}m$ diameter were fabricated by using the evaporation method and were reflowed using the rapid thermal annealing system. The intermetallic compound was characterized using a SEM, an EDS, and an XRD. The $(Cu_xAu_{1-x})_6Sn_5$ compounds formed at the interface between Bi-Sn solder and Au/Cu/Ti UBM. On the other hand, in the Bi-Sn solder bump on Au/Ni/Ti UBM, the faceted and rectangular intermetallic compounds were observed on the solder bump surface and inside the solder bump as well as at the UBM interface. These intermetallic compounds were Identified as $(Au_{l-x-y}Bi_xNi_y)Sn_2$ phase.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.320-323
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• 1997

The microwave dielectric properties of X Ba0-$0.15(Nd_{0.87}Bi_{0.13})_2O_3$-(0.85-X) $TiO_2$ ($X=0.13{\sim}0.17$) and 0.16Ba0-$0.15(Bi_xNd_{1-x})_2O_3-0.69TiO_2$ ($X=0.10{\sim}0.16$) ceramics were investigated. Dielectric constant, quality factor and temperature coefficient of resonant frequency of 0.16Ba0-$0.15(Nd_{0.87}Bi_{0.13})_2O_3-0.69TiO_2$ ceramics sintered at $1320^{\circ}C$ for 2 hours were 89.2, 1920(at 4GHz) and 5.2ppm/$^{\circ}C$, respectively.