• The Transactions of the Korean Institute of Power Electronics
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• v.12 no.3
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• pp.234-240
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• 2007

In this paper, a novel multi-level inverter for low cost high speed switched reluctance(SR) drive is proposed. The proposed multi-level converter has reduced number of power switches and diodes than that of a conventional asymmetric converter for SRM and smaller voltage rating of the dump capacitor comparing with energy efficient c-dump converter. It can supply five operating modes that is boosted, DC-link, zero, negative bias and negative boosted voltage. The proposed multi-level converter has fast excitation and demagnetization modes of phase current, so dynamic response can be achieved. The proposed multi-level converter is verified by computer simulation and experimental results.

• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.475-483
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• 2012

High capacitance X5R MLCCs based on $BaTiO_3$ ceramic dielectric layers exhibit a single broad, asymmetric arc shape impedance and modulus response over the wide frequency range between 1 MHz to 0.01 Hz. Analysis according to the conventional brick-layer model for polycrystalline conductors employing a series connection of multiple RC parallel circuits leads to parameters associated with large errors and of little physical significance. A new parametric impedance model is shown to satisfactorily describe the experimental spectra, which is a parallel network of one resistor R representing the DC conductivity thermally activated by 1.32 eV, one ideal capacitor C exactly representing bulk capacitance, and a constant phase element (CPE) Q with complex capacitance $A(i{\omega})^{{\alpha}-1}$ with ${\alpha}$ close to 2/3 and A thermally activated by 0.45 eV or ca. 1/3 of activation energy of DC conductivity. The feature strongly indicate the CK1 model by J. R. Macdonald, where the CPE with 2/3 power-law exponent represents the polarization effects originating from mobile charge carriers. The CPE term is suggested to be directly related to the trapping of the electronic charge carriers and indirectly related to the ionic defects responsible for the insulation resistance degradation.