• The KIPS Transactions:PartA
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• v.12A no.3 s.93
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• pp.205-214
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• 2005

Flash memory is at high speed used as storage of personal information utilities, ubiquitous computing environments, mobile phones, electronic goods, etc. This is because flash memory has the characteristics of low electronic power, non-volatile storage, high performance, physical stability, portability, and so on. However, differently from hard disks, it has a weak point that overwrites on already written block of flash memory is impossible to be done. In order to make an overwrite possible, an erase operation on the written block should be performed before the overwrite, which lowers the performance of flash memory highly. In order to solve this problem the flash memory controller maintains a system software module called the flash translation layer(FTL). Of many proposed FTL schemes, the log block buffer scheme is best known so far. This scheme uses a small number of log blocks of flash memory as a write buffer, which reduces the number of erase operations by overwrites, leading to good performance. However, this scheme shows a weakness of low page usability of log blocks. In this paper, we propose an enhanced log block buffer scheme, FAST(Full Associative Sector Translation), which improves the page usability of each log block by fully associating sectors to be written by overwrites to the entire log blocks. We also show that our FAST scheme outperforms the log block buffer scheme.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2003.09a
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• pp.640-643
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• 2003

A Walsh function based associative memory is capable of storing m patterns in a single pattern storage space with Walsh encoding of each pattern. Furthermore, each stored pattern can be matched against the stored patterns extremely fast using algorithmic parallel processing. As such, this special type of memory is ideal for real-time processing of large scale information. However this incredible efficiency generates large amount of crosstalk between stored patterns that incurs mis-recognition. This crosstalk is a function of the set of different sequencies [number of zero crossings] of the Walsh function associated with each pattern to be stored. This sequency set is thus optimized in this paper to minimize mis-recognition, as well as to maximize memory saying. In this paper, this Walsh memory has been applied to the problem of face recognition, where PCA is applied to dimensionality reduction. The maximum Walsh spectral component and genetic algorithm (GA) are applied to determine the optimal Walsh function set to be associated with the data to be stored. The experimental results indicate that the proposed methods provide a novel and robust technology to achieve an error-free, real-time, and memory-saving recognition of large scale patterns.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.14 no.5
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• pp.561-570
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• 1989

In this paper, we describe the theoretical analysis and optical implementation of real-time associative memory based on the modified Hopfield neural network model by using a commerical LCTV connected to computer graphic as the real-time memory mask and adding one mask line to the momory mask in order to optically obtain the time-varing thresholding values of the modified Hopfield model.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.61-69
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• 1994

For distortion-invariant recognition of Korean characters, a holographic implementation of an optical associative memory system is proposed. The structure of the proposed system is a single-layer neural network employing interconneclion matrix, thresholding and feedback. To provide the interconnection matrix, we use two CGII's which are placed on intermcdiate plane of cascaded Vander Lugt corrclators to form an optical memory loop. The holographic correlator stores reference images in a hologram and retrives them in a coherently illuminated feedback loop. An input image which maybe noisy or incomplete, is applicd to the system and simultaneously correlated optically with all of the stord images. These correlations are throsholed and fed back to the input, where the strongest correlation reinforces the input image. The enhanced image passes arround the loop repeatedly, approaching the stored image more closely on each pass until the system stabilizes on the desired image. The computer simulation results show that the proposed Korean Character recognition algorithm has high discrimination capability and noise immunity.

• Korean Journal of Optics and Photonics
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• v.3 no.3
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• pp.191-197
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• 1992

We have developed a new optical associative memory system hased on the symmetric three layered neural network model, uhing two holograms and a LCIV. In the experiment, four Korean alphabet letters (ㄹ, ㅅ, ㅇ, ㅈ) are used as memory patterns. The results are compared with those of the two layered network and the IIopfield models. The results show that more than 95% recognition ablity is obtained for thc input which has the error rate less than 12%.

• Journal of the Korea Society of Computer and Information
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• v.18 no.2
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• pp.1-8
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• 2013

TIn this paper, we propose a high performance L1 cache structure on the high clock CPU of 4GHz. The proposed cache memory consists of three parts, i.e., a direct-mapped cache to support fast access time, a two-way set associative buffer to exploit temporal locality, and a buffer-select table. The most recently accessed data is stored in the direct-mapped cache. If a data has a high probability of a repeated reference, when the data is replaced from the direct-mapped cache, the data is selectively stored into the two-way set associative buffer. For the high performance and low power consumption, we propose an one way among two ways set associative buffer is selectively accessed based on the buffer-select table(BST). According to simulation results, Energy $^*$ Delay product can improve about 45%, 70% and 75% compared with a direct mapped cache, a four-way set associative cache, and a victim cache with two times more space respectively.

• Journal of the Korea Society of Computer and Information
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• v.16 no.10
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• pp.1-10
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• 2011

There are the large overhead of block erase and page write operations in NAND flash memory, though it has low power consumption, cheap prices and a large storage. Due to the physical characteristics of NAND flash memory, overwrite operations are not permitted at the same location, so rewriting operation require after erase operation. it cause performance decrease of NAND flash memory. Using SRAM buffer in traditional NAND flash memory, it can not only reduce effective write operation but also guarantee fast memory access time. In this paper, we proposed the small SRAM buffer management system for reducing overhead of NAND flash memory, that is, erase and write operations. The proposed buffer system in a NAND flash memory consists of two parts, i.e., a fully associative temporal buffer with the small fetching block size and a fully associative spatial buffer with the large fetching block size. The temporal buffer have small fetching blocks that referenced from spatial buffer. When it happen write operations or erase operations in NAND flash memory, the related fetching blocks in temporal buffer include a page or a block are written in NAND flash memory at the same time. The writing and erasing counts in NAND flash memory can be reduced. According to the simulation results, although we have high miss ratios, write and erase operations can be reduced approximatively 58% and 83% respectively. Also the average memory access times are improved about 84% compared with the fully associative buffer with two sizes.

• Journal of KIISE:Computing Practices and Letters
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• v.15 no.1
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• pp.1-13
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• 2009

Flash memory is widely used as a storage medium of mobile devices such as MP3 players, cellular phones and digital cameras due to its tiny size, low power consumption and shock resistant characteristics. Currently, there are many studies to replace HDD with flash memory because of its numerous strong points. To use flash memory as a storage medium, FTL(Flash Translation Layer) is required since flash memory has erase-before-write constraints and sizes of read/write unit and erase unit are different from each other. Recently, new type of flash memory called "large block flash memory" is introduced. The large block flash memory has different physical structure and characteristics from previous flash memory. So existing FTLs are not efficiently operated on large block flash memory. In this paper, we propose an efficient FTL for large block flash memory based on FAST(Fully Associative Sector Translation) scheme and page-level mapping on data blocks.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.68-75
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• 2009

As the recent performance of microprocessor is improving quickly, the necessity of cache is growing because of the increase of the access time of main memory. Every block of direct-mapped cache maps to one cache line. Although the mapping rule is simple, if different blocks map to one cache line, the miss ratio will be higher than the set-associative cache due to conflicts. In this paper, for the improvement of the direct-mapped cache of OpenRISC, 4-way set-associative cache is proposed. Four blocks of the main memory of the proposed cache map to one cache line so that the miss ratio is less than the direct-mapped cache. Pseudo-LRU Policy, which is one of the Line Replacement Policies, is used for decreasing the number of bits that store LRU value. The OpenRISC core including the 4-way set-associative cache was verified with FPGA emulation. As the result of performance measurement using test program, the performance of the OpenRISC core including the 4-way set-associative cache is higher than the previous one by 50% and the decrease of miss ratio is more than 15%.

• Journal of KIISE:Computer Systems and Theory
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• v.32 no.2
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• pp.75-84
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• 2005

This research is to design a high performance NAND-type flash memory package with a smart buffer cache that enhances the exploitation of spatial and temporal locality. The proposed buffer structure in a NAND flash memory package, called as a smart buffer cache, consists of three parts, i.e., a fully-associative victim buffer with a small block size, a fully-associative spatial buffer with a large block size, and a dynamic fetching unit. This new NAND-type flash memory package can achieve dramatically high performance and low power consumption comparing with any conventional NAND-type flash memory. Our results show that the NAND flash memory package with a smart buffer cache can reduce the miss ratio by around 70% and the average memory access time by around 67%, over the conventional NAND flash memory configuration. Also, the average miss ratio and average memory access time of the package module with smart buffer for a given buffer space (e.g., 3KB) can achieve better performance than package modules with a conventional direct-mapped buffer with eight times(e.g., 32KB) as much space and a fully-associative configuration with twice as much space(e.g., 8KB)