• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.55-56
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• 2006

We investigated the diffraction grating efficiency by the DPSS laser beam wavelength to improve the diffraction efficiency on AsGeSeS & Ag/ AsGeSeS thin film. Diffraction efficiency was obtained from DPSS(532nm)(P:P)polarized laser beam on AsGeSeS, Ag/ AsGeSeS and AsGeSeS/Ag/AsGeSeS thin films. As a result, for the laser beam intensity, 0.24 mW, single AsGeSeS thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for 2.4 mW, it was recorded with the fastest speed of 50 s, which the diffraction grating forming speed is faster than that of 0.24 mW beam. Ag/ AsGeSeS and AsGeSeS/ Ag/ AsGeSeS multi-layered thin film also show the faster grating forming speed at 2.4 mW and higher value of diffraction efficiency at 0.24 mW.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.240-244
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• 2007

We investigated the diffraction grating efficiency by the Diode Pumped Solid State(DPSS 532 nm) laser beam wavelength to improve the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35},\;Ag/As_{40}Ge_{10}Se_{15}S_{35}$ and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Diffraction efficiency was obtained from DPSS laser, used (P:P)polarized laser beam on each thin films. As a result, for the laser beam intensity in $0.24mW/cm^2$, single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for laser beam intensity in $2.4mW/cm^2$, it was recorded with the fastest speed of 50 s(0.013%), which the diffraction grating forming speed is faster than that of $0.24mW/cm^2$ beam. $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ double layer and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layered thin film also show the faster grating forming speed at $2.4mW/cm^2$ and higher value of diffraction efficiency at $0.24mW/cm^2$.

• 한국진공학회지
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• 제22권2호
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• pp.86-91
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• 2013

Arsenic interruption growth (AIG)법을 이용하여 GaAs 기판에 성장한 InAs 양자점(quantum dots, QDs)의 광학적 특성을 PL (photoluminescence)과 time-resolved PL을 이용하여 분석하였다. AIG법은 InAs 양자점 성장 동안 In 공급은 계속 유지하면서 셔텨(shutter)를 이용해서 As 공급과 차단을 조절하는 방법이다. 본 연구에서는 As 공급과 차단을 1초(S1), 2초(S2), 또는 3초(S3) 동안 반복하여 성장한 InAs QDs과 As 차단 없이 성장한 기준시료(S0)를 사용하였다. AIG법으로 성장한 시료들의 PL 세기는 기준시료보다 모두 강하게 나타나고, As 차단 시간에 따라 PL 피크는 적색이동(redshifted) 또는 청색이동 (blueshifted)하여 나타났다. 기준시료 S0의 PL 피크와 비교하였을 때 S1의 PL 피크의 적색이동은 양자점 평균 길이가 S0보다 증가하였기 때문이며, S3의 청색이동은 양자점 평균 길이가 S0보다 감소하였기 때문이다. AIG법으로 성장한 QDs 시료들의 PL 세기의 증가는 cluster의 감소, 양자점 밀도의 증가, 균일도의 향상, 종횡비(aspect ratio) 향상으로 설명된다. 온도에 따른 PL 세기와 PL 피크 에너지, PL 소멸 시간과 발광 파장에 따른 PL 소멸 시간을 측정하였다. As 공급과 차단을 2초로 하였을 때 cluster는 전혀 나타나지 않았고 양자점의 밀도는 증가하였으며 균일도와 종횡비도 향상되었다. 또한 S2는 가장 강한 PL 세기와 가장 긴 소멸 시간을 나타내었다. 이러한 결과는 AIG법을 이용하여 InAs 양자점의 크기, 조밀도, 균일도, 종횡비 등을 조절하여 원하는 파장대의 양자점을 성장할 수 있으며 발광 특성도 향상시킬 수 있음을 확인하였다.

• 기술혁신연구
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• 제5권1호
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• pp.113-149
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• 1997

This paper, searching for the origin of the science and technology policy, is one of the research series on the original form of current S&T policy such as origin, evolution and changing patterns. Without understanding the origin, it is very difficult to understand the evolution and the current change of the policy. To answer this question, 2 kinds of conditions are set: 4 concepts for the origin of a policy and also 4 conditions for the S&T policy itself. As the origin of a policy, 4 concepts are set such as independence, continuance, diffusion and modern state as a policy body. Also as conditions for S&T policy, there may be 4 conditions such as policy targets, policy functions, administration body and the usage of the name of the policy. S&T can be distinguished as science, technology and S&T along it's development path. There, hence, are 2 origins of science and technology policy. French policy for modern science at the late 18th century and the establishment of the Agency of Science and Technology Policy of Japan in 1956 can be pointed out as the origin of the policy. The former can be called as the origin for natural science, and the latter as the origin for S&T. This study implies that new paradigm of S&T policy is a reflection for both the needs of new S&T and social needs. When there were big problems in a society and when there appeared new S&T, they exploited new S&T vigorously. This has been remained as a rememberable monuments in the history of the S&T policy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.823-827
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• 2001

The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of Eg(T)=2.1365 eV-(9.89${\times}$10$\^$-3/ eV)T$^2$/(2930+T). After the as-grown AgInS$_2$/GaAs was annealed in Ag-,S-, and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of V$\_$Ag/, V$\_$s/, Ag$\_$int/, and S$\_$int/ obtained from PL measurement were classified to donors or acceptors type. And, we concluded that the heat-treatment in the S-atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did net from the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

• KSBB Journal
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• 제10권1호
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• pp.71-77
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• 1995

Penicillium spiculisporum으로부터 생산한 S-acid 와 그의 유도체를 만들고 이들의 계면활성제로서의 특성을 살펴 보았다. S-lNa 엽 이 우수한 표면장력 저하능 (31.6dyne/때)과 기존의 SDS, Tween 80을 능가하는 분산능력을 보였다. 또한 칼슐 존재 하에 서도 유화능력을 유지할 수 있었고 침투력에서도 기존의 LAS와 유사한 결과를 보였다. 반면 대전방지 능력은 거의 없었고 세척력은 LAS의 70%를 보였다. 생분해측면에서는 모든 유도체가 기존의 계연활 성제보다 월등히 빨리 분해되었으며 방청력변에서는 S-3Na 엽이 기존의 방청제와 유사한 우수한 결과를 보였다.

• Transactions on Electrical and Electronic Materials
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• 제5권2호
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• pp.50-54
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• 2004

The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of E$\_$g/(T) = 2.1365 eV - (9.89${\times}$10$\^$－3/ eV/K) T$^2$/(2930＋T eV). After the as-grown AgInS$_2$/GaAs was annealed in Ag－, S－. and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or accepters type. And, we concluded that the heat-treatment in the S- atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did not form the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

• 가정과삶의질연구
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• 제16권1호
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• pp.81-94
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• 1998

The purpose of this study is to examine men's role conflicts of dual-earner family based on man's role type. Man's role type is composed of man's sex role attitude and family-role performance and categorized in four types such as traditionalism type neo-traditionalism type equalitarianism type and inconsistancy type. The test analysis can be summarized as follows; First test analysis can be summarized as follows; role performance and man's role conflict as working hours is long wife's role requirement is high family-role conflict as working hours is long wife's role requirement is high family-role is not commit man's role conflict directly affected. In addition indirect affect through family-role performance shows that man's role conflict level is low as level of income is high level of income difference between man and wife is low child is younger and intent to modern sex-role attitude. Second looking into the difference role conflict to man's role type it shows that equalita ianism type's role conflict is low and man's role conflict in traditionalism and neo-traditonalism types is high.

• 한국광학회:학술대회논문집
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• 한국광학회 1991년도 제6회 파동 및 레이저 학술발표회 Prodeedings of 6th Conference on Waves and Lasers
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• pp.98-101
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• 1991

The As2S3 thin film has a characteristics of optical modulation in both amplitude and phase. Since the As2S3 thin film can be used as a real-time reconfigurable optical filter, the fSDF filter can be optically fabricated on it. According to the modulation characteristics of the As2S3, the optimal fSDF filter recorded on this thin plate has the form of continuous amplitude and binary phase. Computer simulation and optical experiments on the optical pattern classification show that the As2S3 is suitable for the optical fSDF filter.

• 한국결정성장학회지
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• 제12권4호
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• pp.196-201
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• 2002

The $AgInS_{2}$ epilayers with a chalcopyrite structure grown using a hot-wall epitaxy method have been confirmed to be a high quality crystal. From the optical absorption measurements, a temperature dependence of the energy band gap on $AgInS_{2}/GaAs$ was found to be $Eg(T)=2.1365eV-(9.89{\times}10^{-3}eV)T^{2}/(2930+T)$. After the as-grown $AgInS_{2}/GaAs$ was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of $AgInS_{2}/GaAs$ has been investigated by using photoluminescence measurements at 10 K. The native defects of $V_{Ag},\;V_{S},\;Ag_{int}$ and $S_{int}$ obtained from photoluminescence measurements were classified as donors or accepters. It was concluded that the heat-treatment in the S-atmosphere converted $AgInS_{2}/GaAs$ to an optical p-type. Also, it was confirmed that In in $AgInS_{2}/GaAs$ did not form the native defects because In in $AgInS_{2}$ did exist in the stable form.