• JSTS:Journal of Semiconductor Technology and Science
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• 제14권2호
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• pp.184-188
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• 2014

There is a trade-off between read stability and writability under a full-/half-select condition in static random access memory (SRAM). Another trade-off in the minimum operating voltage between the read and write operation also exists. A new peripheral circuit for SRAM arrays, called a variation sensor, is demonstrated here to balance the read/write margins (i.e., to optimize the read/write trade-off) as well as to lower the minimum operation voltage for both read and write operations. A test chip is fabricated using an industrial 45-nm bulk complementary metal oxide semiconductor (CMOS) process to demonstrate the operation of the variation sensor. With the variation sensor, the word-line voltage is optimized to minimize the trade-off between read stability and writability ($V_{WL,OPT}=1.055V$) as well as to lower the minimum operating voltage for the read and write operations simultaneously ($V_{MIN,READ}=0.58V$, $V_{MIN,WRITE}=0.82V$ for supply voltage $(V_{DD})=1.1V$).

• 중국학논총
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• 제71호
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• pp.23-40
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• 2021

'过' and '了' are the key points, as well as difficult ones, in the academic study of Chinese grammar and language teaching. This article analyzes this language use by taking two sentence structures as example, namely 'Pao le.' and 'Pao guo le.'. As the semantic meanings of 'V+了2' and 'V+过1+了2' are very similar. Therefore, it can be confusing for non-native speakers to master this usage. This article attempts to sort out and analyze the usage environment and pragmatic characteristics of 'V+过1+了2' by employing the examples from the data of Corpus of the Chinese Linguistics Research Center of Peking University. By focusing on the usage environment and pragmatic characteristics of '过' and it is desirable for teachers to combine semantics, syntax and pragmatics while explaining the grammar point, in order for learners to understand accurate information quickly and learn how to use it.

• 한국진공학회지
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• 제18권5호
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• pp.352-357
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• 2009

본 연구에서는 1.1 eV의 에너지대역을 흡수할 수 있는 InAs 양자점구조와 1.3 eV의 에너지 대역을 흡수 할 수 있는 InGaAs 양자우물구조를 이용한 텐덤형 태양전지의 구조를 1D poisson을 이용해 설계하고, 분자선 에피택시 장비를 이용하여 각각 5, 10, 15층씩 쌓은 양자점 및 양자우물구조를 삽입하여 p-n접합을 성장하였다. Photoluminescence (PL) 측정을 이용한 광학적특성 평가에서 양자점 5층 및 양자우물 10층을 삽입한 구조의 PL 피크가 가장 높은 상대발광강도를 나타냈으며, 각각 1.1 eV 및 1.3 eV에서 57.6 meV 및 12.37 meV의 Full Width at Half Maximum을 나타내었다. 양자점의 밀도 및 크기는 Reflection High-Energy Electron Diffraction system과 Atomic Force Microscope를 이용해 분석하였다. 그리고 GaAs/AlGaAs층을 이용한 터널접합에서는 I-V 측정을 통하여 GaAs층의 두께(20, 30, 50 nm)에 따른 터널링 효과를 평가하였다. GaAs 층의 두께가 30 nm 및 50 nm의 터널접합에서는 backward diode 특성을 나타낸 반면, 20 nm GaAs층의 GaAs/AlGaAs 터널접합에서는 다이오드 특성 곡선을 확인하였다.

• 한국컴퓨터정보학회논문지
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• 제20권1호
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• pp.227-235
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• 2015

본 논문은 NP-완전으로 알려진 최대 클릭의 정확한 해를 선형시간으로 찾는 알고리즘을 제안하였다. 먼저, 주어진 그래프 G=(V,E)에서 최대 차수 ${\Delta}(G)$ 정점 $v_i$를 클릭의 대표 정점으로 결정한다. $v_i$ 인접 정점 $N_G(v_i)$에서 ${\Delta}(G)$ 정점 $v_j$를 선택하여 $N_G(v_i){\cap}N_G(v_j)$를 후보 클릭 w와 $v_k$로 결정한다. $d_G(v_k)$ 내림차순으로 $w=w{\cap}N_G(v_k)$를 얻는다. 마지막으로, $G{\backslash}w$그래프에서 동일한 절차를 수행하여 얻은 클릭이 기존에 얻은 클릭과 동일하거나 크면 이 클릭을 선정하는 검증과정을 거쳤다. 이와 같은 방법으로 독립된 다수의 클릭도 얻을 수 있는 장점이 있다. 제안된 알고리즘을 다양한 정규와 비정규 그래프에 적용한 결과 모든 그래프에 대해 선형시간 O(n)으로 정확한 해를 구하였다.

• 전기학회논문지
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• 제59권4호
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• pp.809-813
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• 2010

Although the goals of HL7 Version 2(V2) and Version 3(V3) are identical, the concepts of the implementation and technological basis are different; this makes their versions inconvertible. This problem interrupts technological innovation advanced from V2 to V3 and has been raised as a new type of barrier in the field of medical information system. This study intends to develop software to convert V2 to V3 which can be utilized in the actual medical environment. Since it is practically difficult to develop the whole tools that automatically change total V2 messages into V3 messages, this article has designed, implemented, and tested the software that allows mapping between V2 and V3 which function as tools. In order to test this program, it has used ADT^A03 of five V2 messages to generate V3 messages. It is expected that the result of this research will be one of the new methods allowing conversion between V2 and V3.

• 한국물환경학회지
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• 제23권1호
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• pp.122-130
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• 2007

This study was conducted to evaluate water treatment characteristics according to vegetated wetland(V) and open water(O) arrangements in free water surface constructed wetland. Three pilot-scale wetlands, V-V, O-V and V-O, were built and operated. $BOD_5$ was a slightly reduced at all the arrangements because the influent concentration was so low as background concentration of constructed wetlands. While T-N and T-P removal efficiency showed higher than 50% for all cases. The O-V arrangement showed the highest removal efficiency: 20% for $BOD_5$, 56% for SS, 59% for T-N and 72% for T-P. Effluent concentration of the O-V were significantly low compared with those from the V-O. O-V arrangement would be beneficial in the light of pollutant removal efficiency as well as construction cost.

• 한국정보전자통신기술학회논문지
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• 제15권4호
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• pp.223-229
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• 2022

본 논문은 보일러에 사용되는 점화트랜스에 대해 연구를 하였다. 점화봉 길이와 점화봉 간격 변화에 관계없이 출력주파수는 59.5~61.3Hz 사이에서 측정되었고 저주파 회로는 정상적으로 동작된 것을 알 수 있었다. 점화봉 간격이 2~10mm 변화를 주었을 때, 점화봉 길이가 30cm에서는 2.8A에서 3.45A까지 측정되었다. 점화봉 길이가 500cm에서는 9.37A에서 14.5A까지 측정되었고 1000cm에서는13.2A에서 32.6A까지 측정되었다. 점화봉 길이와 점화봉 간격이 증가 될수록 전류는 증가되었다. 2차코일 출력전압을 측정한 결과. 점화봉 길이가 30cm에서는 AC 0.84kV~AC 1.75kV로 측정되었고 500cm 인 경우는 AC 1.17kV~AC 1.944로 측정되었고 1000cm에서는 AC 1.4kV~AC 7.18kV까지 측정되었다. 점화봉 길이와 점화봉 간격이 증가되면 2차코일 출력전압도 증가되었다. 점화트랜스의 출력전압 측정한 결과, 점화봉 길이가 30cm에서는 DC 1.11kV~DC 1.57kV 까지 측정되었고 500cm 인 경우는 DC 2.49kV~DC 3.72kV, 1000cm에서는 DC 3.78kV~DC 9.42kV까지 측정되어서 점화봉 길이와 점화봉 간격이 증가되면 출력전압이 증가된 것을 알 수 가 있었다.

• Asian Pacific Journal of Cancer Prevention
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• 제13권8호
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• pp.3791-3794
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• 2012

CD44v, especially splice variants containing exon v6, has been shown to be related closely to development of different tumors. High levels of CD44v6/v7 have been reported to be associated with invasiveness and metastasis of many malignancies. The objective of this study was to detect expression of CD44v6-containing variants in patients with acute promyelocytic leukemia (APL) and evaluate the potential of CD44v6/v7 for risk stratification. Reverse transcription polymerase chain reaction (RT-PCR) followed by PCR product purification, ligation into T vectors and positive clone sequencing were used to detect CD44 v6-containing variant isoforms in 23 APL patients. Real-time quantitative PCR of the CD44v6/v7 gene was performed in patients with APL and in NB4 cells that were treated with all-trans retinoic acid (ATRA) or arsenic trioxide ($As_2O_3$). Sequencing results identified four isoforms (CD44v6/v7, CD44v6/v8/v10, CD44v6/v8/v9/v10, and CD44v6/v7/v8/v9/v10) in bone marrow mononuclear cells of 23 patients with APL. The level of CD44v6/v7 in high-risk cases was significantly higher than those with low-risk. Higher levels of CD44v6/v7 were found in three patients with central nervous system relapse than in other patients inthe same risk group. Furthermore, in contrast to ATRA, only $As_2O_3$ could significantly down-regulate CD44v6/v7 expression in NB4 cells. Our data suggest that CD44v6/v7 expression may be a prognostic indicator for APL.

• 대한방사선기술학회지:방사선기술과학
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• 제7권1호
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• pp.85-92
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• 1984

It is a esperimental report to investigation for optimum window-width on radionuclides $^{131}I\;and\;^{198}Au$ The obtained results were as follow; 1. In case of $^{131}I$, 1) The lowest counts produced at the window-width of 10KeV and 20KeV. 2) The count rate, more increased, when the window-width more opened, but the counting efficiency is very good between 70KeV and 130KeV window-width (19.23% -35.71% about the peak energy). 3) The heighest counting rate per KeV of window appeared at 130KeV window-width. 4) BKG counts increased proportionally to the wider window as 5.473 + 0.016 cpm. 2. In case of $^{198}Au$ 1) The lowest counts appeared at 10KeV and 20KeV window. 2) Count rate more increased, when window-width more opened, but the counting efficiency is very good between 80KeV and 140KeV window (19.46% - 34.06% about the peak energy). 3) The highest counting rate per KeV of the window appeared at 140KeV window. 4) BKG counts increased proportionally to the wider window-width as 4.74 + 1.09 cpm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.