• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

• Journal of Sensor Science and Technology
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• v.25 no.1
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• pp.41-45
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• 2016

In this study, LET (Linear Energy Transfer) calibration of CR-39 SSNTD (Solid State Nuclear Track Detector) was performed using 500 MeV/u Fe heavy ions in HIMAC (Heavy Ion Medical Accelerator) for high LET radiation dosimetry. The irradiated CR-39 SSNDT were etched according JAXA (Japan Aerospace Exploration Agency) etching conditions. And the etched SSNTD were analyzed by using Image J. Determined dose-mean lineal energy ($\overline{y_D}$) of 500 MeV/u Fe is about 283.3 keV/um by using the CR-39 SSNTD. This value is very similar result compare to the results calculated by GEANT4 Monte Carlo simulation and measured with TEPC active radiation detector. We confirmed that the CR-39 SSNTD was useful for high LET radiation dosimetry such as heavy iron ions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1100-1106
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• 2004

In this paper, we intend to make fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C：H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the alignment material of a-C：H thin film as working gas at 30 W rf bias condition. A high pretilt angle of about 5 $^{\circ}C$ by ion beam (IB) exposure on the a-C：H thin film surface was measured. Consequently, the high pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C：H thin film surface as working gas at 30 W rf bias condition can be achieved. An excellent voltage-transmittance (V -T) and response time curve of the IE-aligned FFS-LCD was observed with oblique IB exposure on the a-C：H thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IE exposure on the a-C：H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.

• Korean Journal of Materials Research
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• v.16 no.6
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• pp.367-372
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• 2006

Polytetrafluoroethylene (PTFE) surface was modified for improving hydrophilicity by ion irradiation in environmental gas of $N_2$ and $NH_3$, respectively. The water contact angle onto the PTFE surface increased from $104{\circ}$ to over $140{\circ}$ by Ar ion irradiation in $N_2$ gas. In the case of $NH_3$ as environmental gas, there were a slight increase of contact angle from ion dose of $1{\times}10^{15}\;to\;5{\times}10^{15}\;ions/cm^2$, and its dramatic decrease to the value of 35o at the conditions of ion dose higher than $1{\times}10^{16}\;ions/cm^2$. It was found from SEM results that the surface morphology of PTFE was changed into one with filament structure after Ar ion irradiation in $N_2$ gas environments. On the contrary, Ar ion irradiation in $NH_3$ gas condition induced the PTFE surface with network structure. Hydrogen ion irradiation resulted in a little change of PTFE surface morphology, comparing with the case of Ar ion irradiation. The water contact angle of hydrogen ion irradiated PTFE surface in reactive gas decreased with increment of ion dose. Hydrogen ion irradiation could improve hydrophilicity with little change of surface morphology. It might be considered from FT-IR results that the improvement in wettability of PTFE surface by ion irradiation in $N_2$ and $NH_3$ gases could be due to the hydrophilic groups of NHx bonds.

• Korean Journal of Materials Research
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• v.10 no.7
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• pp.459-463
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• 2000

Direct use of negative ions for modification of materials has opened new research such as charging-free ion implantation and new materials syntheses by pure kinetic bonding reactions. For these purposes, a new solid-state ce-sium ion source has been developed in the laboratory scale. In this paper, diamond like carbon(DLC) films were prepared on silicon wafer by a negative cesium ion gun. This system does not need any gas in the chamber; deposition occurs under high vacuum. The ion source has good control of the C- beam energy(from 80 to 150eV). The result of Raman spectrophotometer shows that the degree of diamond-like character in the films, $sp^3$ fraction, increased as ion beam energy increases. The nanoindentation hardness of the films also increases from 7 to 14 GPa as a function of beam energy. DLC films showed ultra-smooth surface(Ra~1$\AA$)and an impurity-free quality.

• Journal of the Korean institute of surface engineering
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• v.43 no.2
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• pp.80-85
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• 2010

The surfaces of WC-Co and SCM415 were etched to form a micro size protrusion for oil based ultra low friction applications using an ion bombardment process in a filtered vacuum arc plasma. WC-Co species showed that a self-patterned surface was available by the ion bombarding process due to the difference of sputtering yield of WC and Co. And the increasing rate of roughness was 0.6 nm/min at -600 V substrate bias voltage. The increasing rate of roughness of SCM415 species was 1.5 nm/min at -800 V, but the selfpatterning effect as shown in WC-Co was not appeared. When the SCM415 species pretreated by electrical discharge machining is etched, the increasing rate of roughness increased from 1.5 nm/min to 40 nm/min at -800 V substrate bias voltage and the uniform surface treatment was available.

• Bulletin of the Korean Chemical Society
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• v.24 no.12
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• pp.1781-1784
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• 2003

Determination of Co(II) ion as a 4-(2-thiazolylazo)resorcinol(TAR) or 5-methyl-4-(2-thiazolylazo)resorcinol(5MTAR) chelate was accomplished by reversed-phase capillary high-performance liquid chromatography (RP-Capillary-HPLC) using a Vydac $C_4$ column and MeCN-water mixture as mobile phase. The effect of change in pH and MeCN percentage of the mobile phase on the retention factor, k and peak intensity were evaluated. It was found that 30% MeCN (v/v) of pH 5.60 or 7.20 was adequate as mobile phase when TAR or 5MTAR is used. Detection limit (D.L., S/N=3) in each case was $2.0\;{\times}\;10^{-7}$M (11.8 ppb) and $3.0\;{\times}\;10^{-7}$ M (17.7 ppb). The Co(II) ion in mineral and waste water was determined with the optimum column and mobile phase.

• Transactions on Electrical and Electronic Materials
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• v.9 no.3
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• pp.120-122
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• 2008

We have studied the tilt angle generation on the homeotropic polyimide (PI) surface using a low intensity ion beam source as a function of incident angle. An excellent LC alignment of nematic liquid crystal (NLC) on the PI surface with ion beam exposure for all incident angles was observed. The tilt angle of NLC on the homeotropic PI surface for all incident angles was from 90 to 88 degree was observed. Also the tilt angle of NLC on the homeotropic PI surface with ion beam exposure of 400 eV had a tendency to increase as ion beam energy incident angle become more instance from 45 degree. Finally, a good LC alignment thermal stability on the homeotropic PI surface with ion beam exposure can be achieved.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.530-531
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• 2013

3 MeV protonirradiated SrTiO3 (STO) single crystal exhibits a blue and green mixed luminescence. However, the same proton irradiated STO deposited with very thin Pt layer does not show any luminescence. This Pt layer involved in preventing the damage caused by arcingthat comes from tens of kV surface voltage build-up due to secondary electron induced charge up at the surface of insulator during ion beam irradiation. It implies that luminescence of ion irradiated STO originated from the modified STO surface layer caused by arcing rather than direct ion beam irradiation effect. Atmospheric pressure plasma, a simple and cost-effective method, treated STO also exhibits the same kind of blue and green mixed luminescence as the ion beam treated STO, because this plasma also creates a surface damage layer by arcing.

• Journal of Korean Society for Atmospheric Environment
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• v.1 no.1
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• pp.99-107
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• 1985

A coated wire ion selective electrode for nitrate (nitrate-CWE_ was constructed using epoxy resin, ion exchanger and plasticizer as a polymer membrane. It's stility, the composition of a polymer membrane, the response characteristics, the selectivity were examined and applied to the environmental analysis. The nitrate-CWE was prepared using a copper wire, wihch was coated with epoxy resin being incorporated with the nitrate ion exchanger and plasticizer. The best composition of the polymer membrane for the nitrate-CWE was obtained by mixing epoxy resin, ion exchanger and plasticizer in the ratio of 2:1:0.4. The potential (56.3$\pm$0.5 mV) of stick form nitrate-CWE in this composition was close to that (59.2 mV) of Nernstian response. The detection limit for nitrate ion were found to the about $6 \times 10^{-5}M$ and the useful pH was 2.5 $\sim$ 10.3. Furthermore, the selectivity of iodide and perchrorate for the nitrage-CWE was also much improved compared with that for a liquid membrane nitrate electrode. The nitrate-CWE was used to determind $NO_x$ in stack gas. The results were in good agreement with those obtained either by electrode method or by the improved NEDA method within a relative error of 4.0%.