• Journal of Microbiology and Biotechnology
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• 제4권2호
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• pp.113-118
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• 1994

A bacterial strain NS-83 isolated from soil was able to produce an extracellular thermostable protease. The strain was identified as Pseudomonas aeruginosa based on its morphological and physiological characteristics. A thermostable protease from this strain has been purified to homogeneity as judged by SDS-PAGE and isoelectric focusing. The purification procedures included hydrophobic interaction, ion exchange, and gel filtration chromatography. The $M_r$ and the pl of the enzyme were 32,000 and 5.9, respectively. The optimal pH at 55$^{\circ}C$ and the optimal temperature at pH 7.0 were 8.0 and 60$^{\circ}C$, respectively. The D-values of the enzyme at 60, 65, and 70$^{\circ}C$ were 22, 2.1, and 0.75 hrs, respectively. The enzyme activity was significantly inhibited in the presence of 1 mM o-phenanthroline or EDTA, suggesting that the enzyme is metalloprotease. The $K_m$, and $V_{max}$ for Hammarsten casein were found to be 3.2 mg/ml and 0.918 unit/ml, respectively. These enzymatic properties were similar to those of elastase produced from P. aeruginosa IFO 3455, but the enzyme was clearly different from the reported elastase, in respect to $Ca^{++}$ effects on enzyme-thermostability. This property, together with amino acid composition analysis, confirmed that the enzyme differs from the known P. aeruginosa elastase.

• 상하수도학회지
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• 제30권2호
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• pp.167-177
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• 2016

This work investigated the decomposition of aqueous anatoxin-a originated from cyanobacteria using an underwater dielectric barrier discharge plasma system based on a porous ceramic tube and an alternating current (AC) high voltage. Plasmatic gas generated inside the porous ceramic tube was uniformly dispersed in the form of numerous bubbles into the aqueous solution through the micro-pores of the ceramic tube, which allowed an effective contact between the plasmatic gas and the aqueous anatoxin-a solution. Effect of applied voltage, treatment time and the coexistence of nutrients such as $NO_3{^-}$, $H_2PO_4{^-}$ and glucose on the decomposition of anatoxin-a was examined. Chemical analyses of the plasma-treated anatoxin-a solution using liquid chromatography-mass spectrometry (LC-MS) and ion chromatography (IC) were performed to elucidate the mineralization mechanisms. Increasing the voltage improved the anatoxin-a decomposition efficiency due to the increased discharge power, but the energy required to remove a given amount of anatoxin-a was similar, regardless of the voltage. At an applied voltage of 17.2 kV (oxygen flow rate: $1.0L\;min^{-1}$), anatoxin-a at an initial concentration of $1mg\;L^{-1}$ (volume: 0.5 L) was successfully treated within 3 min. The chemical analyses using LC-MS and IC suggested that the intermediates with molecular weights of 123~161 produced by the attack of plasma-induced reactive species on anatoxin-a molecule were further oxidized to stable compounds such as acetic acid, formic acid and oxalic acid.

• 한국대기환경학회지
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• 제19권6호
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• pp.701-717
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• 2003

The objective of this study was to extensively estimate the air quality trends of the study area by surveying con-centration trends in months or seasons, after analyzing the mass concentration of PM-10 samples and the inorganic lements, ion, and total carbon in PM-10. Also, the study introduced to apply the PMF (Positive Matrix Factoriza-tion) model that is useful when absence of the source profile. Thus the model was thought to be suitable in Korea that often has few information about pollution sources. After obtaining results from the PMF modeling, the existing sources at the study area were qualitatively identified The PM-10 particles collected on quartz fiber filters by a PM-10 high-vol air sampler for 3 years (Mar. 1999∼Dec.2001) in Kyung Hee University. The 25 chemical species (Al, Mn, Ti, V, Cr, Fe, Ni, Cu, Zn, As, Se, Cd, Ba, Ce, Pb, Si, N $a^{#}$, N $H_4$$^{+}$, $K^{+}$, $Mg^{2+}$, $Ca^{2+}$, C $l^{[-10]}$ , N $O_3$$^{[-10]}$ , S $O_4$$^{2-}$, TC) were analyzed by ICP-AES, IC, and EA after executing proper pre - treatments of each sample filter. The PMF model was intensively applied to estimate the quantitative contribution of air pollution sources based on the chemical information (128 samples and 25 chemical species). Through a case study of the PMF modeling for the PM-10 aerosols. the total of 11 factors were determined. The multiple linear regression analysis between the observed PM-10 mass concentration and the estimated G matrix had been performed following the FPEAK test. Finally the regression analysis provided source profiles (scaled F matrix). So, 11 sources were qualitatively identified, such as secondary aerosol related source, soil related source, waste incineration source, field burning source, fossil fuel combustion source, industry related source, motor vehicle source, oil/coal combustion source, non-ferrous metal source, and aged sea- salt source, respectively.ively.y.

• 대한화학회지
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• 제31권3호
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• pp.250-257
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• 1987

DMSO와 $H_2O$용매 중에서 결합구조가 밝혀진 동공의 크기를 달리한 토륨(IV) 착물들의 전기전도도를 측정하여 해리현상과 전해질의 행동을 알아 보고 DMSO용매중에서 polarography와 cyclic voltammography적 거동을 조사하여 합성착물의 산화환원반응 메카니즘, 가역성을 알아 보고 환원과정에 관여하는 전자수 및 착물의 확산계수를 계산하였다. 그 결과 반양성자성 용매에서 모든 착물들은 1:1전해질로, 물에서는 1:4전해질로 각각 행동하고, DMSO용매중에서 각 착물의 환원반응은 1전자 1단계의 환원반응으로 가역적이며 확산계수는 착물종에 따라 $5.831{\times}10^{-6}{\sim}6.900{\times}10^{-6}$이었다. 그리고 모든 착물의 물분자는 -1.8V(대조전극, SCE)이상에서 분해를 일으켜 수소기체를 발생한다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.422-448
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• 1996

Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

• 한국수소및신에너지학회논문집
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• 제10권4호
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• pp.197-210
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• 1999

The hydrogen storage performance and electrochemical properties of $Zr_{1-X}Ti_X(Mn_{0.2}V_{0.2}Ni_{0.6})_{1.8}$(X=0.0, 0.2, 0.4, 0.6) alloys are investigated. The relationship between discharge performance and alloy characteristics such as P-C-T characteristics and crystallographic parameters is also discussed. All of these alloys are found to have mainly a C14-type Laves phase structure by X-ray diffraction analysis. As the mole fraction of Ti in the alloy increases, the reversible hydrogen storage capacity decreases while the equilibrium hydrogen pressure of alloy increases. Furthermore, the discharge capacity shows a maxima behavior and the rate-capability is increased, but the cycling durability is rapidly degraded with increasing Ti content in the alloy. In order to analyze the above phenomena, the phase distribution, surface composition, and dissolution amount of alloy constituting elements are examined by S.E.M., A.E.S. and I.C.P. respectively. The decrease of secondary phase amount with increasing Ti content in the alloy explains that the micro-galvanic corrosion by multiphase formation is little related with the degradation of the alloys. The analysis of surface composition shows that the rapid degradation of Ti-substituted Zr base alloy electrode is due to the growth of oxygen penetration layer. After comparing the radii of atoms and ions in the electrolyte, it is clear that the electrode surface becomes more porous, and that is the source of growth of oxygen penetration layer while accelerating the dissolution of alloy constituting elements with increasing Ti content. Consequently, the rapid degradation (fast growth of the oxygen-penetrated layer) with increasing Ti substitution in Zr-based alloy is ascribed to the formation of porous surface oxide through which the oxygen atom and hydroxyl ion with relatively large radius can easily transport into the electrode surface.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.309-316
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• 2014

A large particle accelerator requires an ultrahigh vacuum (UHV) system of average pressure under $1{\times}10^{-7}$ Pa for mitigating the impact of beam scattering from the residual gas molecules. The surface inside the beam ducts should be controlled with an extremely low thermal outgassing rate under $1{\times}10^{-9}Pa{\cdot}m^3/(s{\cdot}m^2)$ for the sake of the insufficient pumping speed. To fulfil the requirements, the aluminum alloys were adopted as the materials of the beam ducts for large accelerator that thanks to the good features of higher thermal conductivity, non-radioactivity, non-magnetism, precise machining capability, et al. To put the aluminum into the large accelerator vacuum systems, several key technologies have been developed will be introduced. The concepts contain the precise computer numerical control (CNC) machining process for the large aluminum ducts and parts in pure alcohol and in an oil-free environment, surface cleaning with ozonized water, stringent welding process control manually or automatically to form a large sector of aluminum ducts, ex-situ baking process to reach UHV and sealed for transportation and installation, UHV pumping with the sputtering ion pumps and the non-evaporable getters (NEG), et al. The developed UHV technologies have been applied to the 3 GeV Taiwan Photon Source (TPS) and revealed good results as the expectation. The problems of leakage encountered during the assembling were most associated with the vacuum baking which result in the consequent trouble shootings and more times of baking. Then the installation of the well-sealed UHV systems is recommended.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• Carbon letters
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• 제27권
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• pp.64-71
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• 2018

$TiO_2$-doped activated carbon fibers (ACFs) were successfully prepared as capacitive deionization (CDI) electrode materials by facile ultrasonication-assisted process. ACFs were treated with titanium isopropoxide (TTIP) and isopropyl alcohol solutions of different concentrations and then calcinated by ultrasonication without heat-treatment. The results show that a certain amount of anatase $TiO_2$ was present on the ACF surface. The specific capacitance of the $TiO_2$-doped ACF electrode was remarkably improved (by 93.8% at scan rate of $50mV\;s^{-1}$) over that of the untreated ACF electrode, despite decreases in the specific surface area and total pore volume upon $TiO_2$ doping. From the CDI experiments, the salt adsorption capacity and charge efficiency of the sample with TTIP percent concentration of 15% were found to considerably increase by 71.9 and 57.1%, respectively. These increases are attributed to the improved wettability of the electrode, which increases the number of surface active sites and facilitates salt ion diffusion in the ACF pores. Additionally, the Ti-OH groups of $TiO_2$ act as electrosorption sites, which increases the electrosorption capacity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.