• 생명과학회지
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• 제16권1호
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• pp.37-43
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• 2006

간극결합은 이웃하는 두 세포 사이에 형성된 이온채널이며 또한 단일세포막에서도 작용한다. 간극결합채널을 형성하는 아미노 말단의 10번째 아미노산 잔기 부위까지가 개폐극성(gating polarity)과 전류-전압관계에 영향을 미친다. 정상적인 Cx32 채널은 음성의 개폐극성과 내향적인 정류현상을 보이는 반면, 음성전하를 띠는 aspartate로 치환된 T8D 채널은 반대의 개폐극성과 직선의 정류현상을 보인다. 이러한 개폐극성과 정류현상의 변화가 전하 자체에 의한 것인지 아니면 아미노 말단의 구조적인 변화에 의한 것인지는 아직 불명확하다. 이러한 문제점을 규명하기 위하여 아미노 말단의 8번째 아미노산 잔기를 cysteine기로 치환시킨 T8C 채널을 만들어 substituted-cysteine accessibility method (SCAM) 방법으로 이 채널의 생물리학적 특성을 조사하고자 하였다. T8C 채널은 정상적인 Cx32 채널처럼 음성의 개폐극성과 내향적인 정류현상을 보였으며, cysteine기로 치환이 정상적인 Cx32 채널의 원래 구조를 변화시키지 않았다는 것을 의미한다. 본 연구에서는 이런 전하효과를 규명하기 위하여 음성 전하를 갖는 MTSES-와 양성전하를 갖는 MTSET+를 사용하였다. MTSES-를 처리하면 T8C 채널은 T8D 채널의 특성처럼 양성의 개폐극성과 직선의 정류현상을 보였다. 그러나 양성전하를 갖는 MTSET+를 처리한 경우에는 T8C 채널은 본래의 특성을 그대로 유지하였다. 작은 분자의 MTS에 의해서 부여된 전하가 아미노 말단의 구조적인 변화를 초래하지는 않을 것으로 생각된다. 따라서 반대의 전하를 띠는 MTSES-와 MTSET+가 서로 상반대는 영향을 미치는 것으로 보아 본 연구에서 관찰된 개폐극성과 전류-전압의 변화는 아미노말단의 구조적인 변화라기보다는 MTS에 의해서 부여된 전하 자체에 기인한다고 할 수 있다. 또한 MTS가 아미노말단의 8번째 부위에 접근하여 반응을 일으킬 수 있다는 결과는 간극결합채널의 아미노말단이 채널의 통로(pore)를 형성한다는 가설을 뒷받침한다.

• Plant Biotechnology Reports
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• 제4권1호
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• pp.85-94
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• 2010

In vitro shoot regeneration of gladiolus in three different culture systems, viz., semi-solid agar (AS), membrane raft (MR), and duroplast foam liquid (DF) cultures was evaluated following the kinetics of shoot multiplication and hyperhydricity at optimized growth regulator combinations. Compared to the AS system, matrixsupported liquid cultures enhanced shoot multiplication. The peak of shoot multiplication rate was attained at 18 days of incubation in the MR and DF systems, whereas the maximum rate in the AS system was attained at 21 days. An early decline in acceleration trend was observed in liquid cultures than the AS culture. The hyperhydric status of the regenerated shoots in the different culture systems was assessed in terms of stomatal attributes and antioxidative status. Stomatal behavior appeared to be normal in the AS and MR systems. However, structural anomaly of stomata such as large, round shaped guard cells with damage in bordering regions of stomatal pores was pronounced in the DF system along with a relatively higher $K^+$ ion concentration than in the AS and MR systems. Antioxidative status of regenerated shoots was comparable in the AS and MR systems, while a higher incidence of oxidative damages of lipid membrane as evidenced from malondialdehyde and ascorbate content was observed in the DF system. Higher oxidative stress in the DF system was also apparent by elevated activities of superoxide dismutase, ascorbate peroxidase, and catalase. Among the three culture systems, liquid culture with MR resulted in maximum shoot multiplication with little or no symptoms of hyperhydricity. Shoots in the DF system were more prone to hyperhydricity than those in the AS and MR systems. The use of matrix support such as membrane raft as an interface between liquid medium and propagating tissue could be an effective means for rapid and efficient mass propagation with little or no symptoms of hyperhydricity.

• Corrosion Science and Technology
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• 제9권6호
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• 대한화학회지
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• 제33권1호
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• pp.37-45
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• 1989

알킬암모늄의 propylene carbonate용액에 크라운 에테르를 첨가하였을때와 첨가하지 않았을 때의 전기화학적 거동을 펄스차이 전압전류법과 순환 전압전류법으로 조사하였다. 그 결과 환원전극 반응은 준가역적 반응임을 알 수 있었고, 환원파의 봉우리가 겹침으로 개별정량이 어려운 이들 이성체 혼합물에 크라운 에테르를 첨가하여 착물화 능력의 차이를 이용하여 혼합물의 각성분을 개별 정량하였다. 즉 $EtNH^{+}_{3}Cl^-$(1.6mM)와 $Me_2NH^{+}_{2}Cl^-$혼합물에 18-crown-6(20mM)를 첨가하였을 때 $Me_2NH^{+}_{2}Cl^-$의 농도가 $EtNH^{+}_{3}Cl^-$의 $\frac{1}{2}$이하(0.8mM이하)에서 펄스차이 전압전류법에 의한 봉우리의 분리가 가능하였고, 착물화에 의한 봉우리의 음전위 이동은 $EtNH^{+}_{3}Cl^-$가 0.53V, $Me_2NH^{+}_{2}Cl^-$가 0.37V이었다. 이때, $Me_2NH^{+}_{2}Cl^-$의 농도범위 0.6∼0.8mM에서 봉우리 전류(봉우리 전위, -1.06V vs. Ag/AgCl에서 $Me_2NH^{+}_{2}$${\cdot}$CR의 환원)와 농도 사이에 직선적 비례관계가 성립하여, $EtNH^{+}_{3}Cl^-$의 공존하에서 $Me_2NH^{+}_{2}Cl^-$를 정량할 수 있었다. 또한 순환전압전류법에서 $EtNH^{+}_{3}Cl^-$의 농도가 $Me_2NH^{+}_{2}Cl^-$(0.5mM)보다 과량인 경우, $EtNH^{+}_{3}Cl^-$ 농도범위 0.5∼2.5mM에서 $Me_2NH^{+}_{2}Cl^-$의 공존하에서 $EtNH^{+}_{3}Cl^-$의 정량이 가능하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.44-45
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• 2010

We are currently conducting studies on culturing and biocompatibility assessment of various cells such as neural stem cells and induced pluripotent stem cells(IPS cells) on carbon nanotube (CNT), on nerve regeneration electrodes, and on silicon wafers with a focus on developing nerve integrated CNT based bio devices for interfacing with living organisms, in order to develop brain-machine interfaces (BMI). In addition, we are carried out the chemical modification of carbon nanotube (mainly SWCNTs)-based bio-nanosensors by the plasma ion irradiation (plasma activation) method, and provide a characteristic evaluation of a bio-nanosensor using bovine serum albumin (BSA)/anti-BSA binding and oligonucleotide hybridization. On the other hand, the researches in the case of "novel plasma" have been widely conducted in the fields of chemistry, solid physics, and nanomaterial science. From the above-mentioned background, we are conducting basic experiments on direct irradiation of body tissues and cells using a micro-spot atmospheric pressure plasma source. The device is a coaxial structure having a tungsten wire installed inside a glass capillary, and a grounded ring electrode wrapped on the outside. The conditions of plasma generation are as follows: applied voltage: 5-9 kV, frequency: 1-3 kHz, helium (He) gas flow: 1-1.5 L/min, and plasma irradiation time: 1-300 sec. The experiment was conducted by preparing a culture medium containing mouse fibroblasts (NIH3T3) on a culture dish. A culture dish irradiated with plasma was introduced into a $CO_2$-incubator. The small animals used in the experiment involving plasma irradiation into living tissue were rat, rabbit, and pick and are deeply anesthetized with the gas anesthesia. According to the dependency of cell numbers against the plasma irradiation time, when only He gas was flowed, the growth of cells was inhibited as the floatation of cells caused by gas agitation inside the culture was promoted. On the other hand, there was no floatation of cells and healthy growth was observed when plasma was irradiated. Furthermore, in an experiment testing the effects of plasma irradiation on rats that were artificially given burn wounds, no evidence of electric shock injuries was found in the irradiated areas. In fact, the observed evidence of healing and improvements of the burn wounds suggested the presence of healing effects due to the growth factors in the tissues. Therefore, it appears that the interaction due to ion/radicalcollisions causes a substantial effect on the proliferation of growth factors such as epidermal growth factor (EGF), nerve growth factor (NGF), and transforming growth factor (TGF) that are present in the cells.

• 한국진공학회지
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• 제15권5호
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• pp.527-533
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• 2006

졸-겔(sol-gel) 방법을 이용하여 스피넬(spinel) 구조를 가지는 $LiNi_xMn_{2-x}O_4$ 박막을 x = 0.9까지 합성하였다. 니켈 치환된 박막은 작은 x 값에서는 cubic 구조가 유지되지만, $x{\geq}0.6$ 범위에서는 tetragonal 구조로 상전이가 일어남이 발견되었다. 이와 같은 cubic-tetragonal 상전이는 low-spin $(t_{2g}^6,e_g^1)$ 상태를 가지는 $N^{3+}(d^7)$ 이온이 팔면체 자리를 차지하게 됨으로써 나타나는 Jahn-Teller 효과에 의한 것으로 해석된다. 이와 같은 Ni 이온들은 +3 및 +2의 원자가를 가지고 존재함이 X-ray photoelectron spectroscopy 분석을 통하여 확인되었다. $LiNi_xMn_{2-x}O_4$ 박막들에 대하여 가시광선-자외선 영역에서 spectroscopic ellipsometry(SE)를 이용하여 광학적 성질을 조사하였고, 그 결과 분석을 통하여 화합물 전자구조에 대하여 고찰하였다. SE 측정된 유전함수 스펙트럼은 주로 전하이동(charge-transfer, CT) 전이(transition)에 의한 넓은 에너지 영역을 가지는 1.9, 2.3, $2.8{\sim}3.0$, $3.4{sim}3.6eV$ 근처의 흡수구조 들로 이루어져 있는데, $O^{2-}$에서 $Mn^{4+}$ 이온의 $t_{2g}$ (1.9 eV)와 $e_g$ $(2.8{\sim}3.0\;eV)$로의 전이 즉, $O^{2-}(2p){\rightarrow}Mn^{4+}(3d)$ 및 $O^{2-}$에서 $Mn^{3+}$ 이온의 $t_{2g}$ (2.3 eV)와 $e_g$ ($3.4{\sim}3.6$ eV)로의 전이 즉, $O^{2-}(2p){\rightarrow}Mn^{3+}(3d)$ 등에 의한 것으로 해석된다. 또한, 1.6, 1.8, 1.9 eV 부근에서 관측된 좁은 에너지 영역의 흡수구조 들은 팔면체 $Mn^{3+}$ 이온 내에서의 d-d 결정장(crystal-field) 전이에 의한 것으로 해석된다. 이러한 흡수구조는 Ni 치환량이 증가함에 따라 그 강도가 감소한다. x = 0.6의 경우 $e_g$ 상태와 관련된 CT 전이구조 들이 $t_{2g}$ 상태와 관련된 전이구조 들에 비하여 큰 폭으로 감소하는데 이것은 Jahn-Teller 효과에 의해서 격자상수가 tetragonal 구조로 확장됨에 따라 $e_g$ 상태와 $O^{2-}(2p)$ 상태 간의 파동함수 중첩이 감소한 것에 기인하는 것으로 해석된다.

• 전기화학회지
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• 제16권2호
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• pp.59-64
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• 2013

$Na_2CO_3$와 [M($SO_4$)(M = Ni, Co, Mn)]을 사용함으로써, Carbonate 공침 합성법에 의해 $[Ni_{0.6}Co_{0.2}Mn_{0.2}]CO_3$ 전구체를 합성하였다. 합성된 전구체는 공기분위기에서 $Li_2CO_3$와 혼합하여 각각, 750, 850 그리고 $950^{\circ}C$에서 소성되었고, 이로 인한 $Li[Ni_{0.6}Co_{0.2}Mn_{0.2}]O_2$ 양극활 물질의 소성온도가 미치는 영향을 조사하였다. $Li[Ni_{0.6}Co_{0.2}Mn_{0.2}]O_2$의 구조와 특성은 X-선 회절 분석(XRD), 시차주사현미경(SEM) 그리고 전기화학적 측정으로 분석되었는데, X-선 회절 결과 $Li[Ni_{0.6}Co_{0.2}Mn_{0.2}]O_2$는 소성온도가 증가함에 따라서 $I_{(003)}/I_{(104)}$는 증가하고 R-factor 는 감소하였으며, 시차주사현미경 결과에서는 1차 입자의 크기가 증가하는 경향을 보였다. 특히, $950^{\circ}C$에서 24시간 동안 소성된 $Li[Ni_{0.6}Co_{0.2}Mn_{0.2}]O_2$는 가역 용량이 $165.3mAhg^{-1}$[cut-off voltage 2.5~4.3 V, 0.1 C($17mAhg^{-1}$)] 그리고 50번째 충 방전 사이클 [cut-off voltage 2.5~4.3 V, 1 C($170mAhg^{-1}$)]까지 95.4%의 우수한 용량 보존율을 가지면서 가장 우수한 전기화학적 특성을 보여주었다.

• 한국지하수토양환경학회지:지하수토양환경
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• 제25권1호
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• pp.62-73
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• 2020

PAHs commonly found in industrial sites such as manufactured gas plants (MGP) are potentially toxic, mutagenic and carcinogenic, and thus require immediate remediation. In-situ chemical oxidation (ISCO) is known as a highly efficient technology for soil and groundwater remediation. Among the several types of oxidants utilized in ISCO, persulfate has gained significant attention in recent years. Peroxydisulfate ion (S₂O₈^2-) is a strong oxidant with very high redox potential (E⁰ = 2.01 V). When mixed with Fe²⁺, it is capable of forming the sulfate radical (SO₄^-·) that has an even higher redox potential (E⁰ = 2.6 V). In this study, the influence of various iron activators on the persulfate oxidation of PAHs in contaminated soils was investigated. Several iron sources such as ferrous sulfate (FeSO₄), ferrous sulfide (FeS) and zero-valent iron (Fe(0)) were tested as a persulfate activator. Acenaphthene (ANE), dibenzofuran (DBF) and fluorene (FLE) were selected as model compounds because they were the dominant PAHs found in the field-contaminated soil collected from a MGP site. Oxidation kinetics of these PAHs in an artificially contaminated soil and the PAH-contaminated field soil were investigated. For all soils, Fe(0) was the most effective iron activator. The maximum PAHs removal rate in Fe(0)-mediated reactions was 92.7% for ANE, 83.0% for FLE, and 59.3% for DBF in the artificially contaminated soil, while the removal rate of total PAHs was 72.7% in the field-contaminated soil. To promote the iron activator effect, the effects of hydroxylamine as a reducing agent on reduction of Fe³⁺ to Fe²⁺, and EDTA and pyrophosphate as chelating agents on iron stabilization in persulfate oxidation were also investigated. As hydroxylamine and chelating agents (EDTA, pyrophosphate) dosage increased, the individual PAH removal rate in the artificially contaminated soil and the total PAHs removal rate in the field-contaminated soil increased.

• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1153-1159
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• 2013

A novel solid-contact indium(III)-selective sensor based on bis-(1H-benzimidazole-5-methoxy-2-[(4-methoxy-3, 5-dimethyl-1-pyridinyl) 2-methyl]) thiosulfinate, known as an omeprazole dimer (OD) and a neutral ionophore, was constructed, and its performance characteristics were evaluated. The sensor was prepared by applying a membrane cocktail containing the ionophore to a graphite rod pre-coated with polyethylene dioxythiophene (PEDOT) conducting polymer as the ion-to-electron transducer. The membrane contained 3.6% OD, 2.3% oleic acid (OA) and 62% dioctyl phthalate (DOP) as the solvent mediator in PVC and produced a good potentiometric response to indium(III) ions with a Nernstian slope of 19.09 mV/decade. The constructed sensor possessed a linear concentration range from $3{\times}10^{-7}$ to $1{\times}10^{-2}$ M and a lower detection limit (LDL) of $1{\times}10^{-7}$ M indium(III) over a pH range of 4.0-7.0. It also displayed a fast response time and good selectivity for indium(III) over several other ions. The sensor can be used for longer than three months without any considerable divergence in potential. The sensor was utilized for direct and flow injection potentiometric (FIP) determination of indium(III) in alloys. The parameters that control the flow injection method were optimized. Indium(III) was quantitatively recovered, and the results agreed with those obtained using atomic absorption spectrophotometry, as confirmed by the f and t values. The sensor was also utilized as an indicator electrode for the potentiometric titration of fluoride in the presence of chloride, bromide, iodide and thiocyanate ions using indium(III) nitrate as the titrant.