• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.184-188
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• 2014

There is a trade-off between read stability and writability under a full-/half-select condition in static random access memory (SRAM). Another trade-off in the minimum operating voltage between the read and write operation also exists. A new peripheral circuit for SRAM arrays, called a variation sensor, is demonstrated here to balance the read/write margins (i.e., to optimize the read/write trade-off) as well as to lower the minimum operation voltage for both read and write operations. A test chip is fabricated using an industrial 45-nm bulk complementary metal oxide semiconductor (CMOS) process to demonstrate the operation of the variation sensor. With the variation sensor, the word-line voltage is optimized to minimize the trade-off between read stability and writability ($V_{WL,OPT}=1.055V$) as well as to lower the minimum operating voltage for the read and write operations simultaneously ($V_{MIN,READ}=0.58V$, $V_{MIN,WRITE}=0.82V$ for supply voltage $(V_{DD})=1.1V$).

• 중국학논총
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• no.71
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• pp.23-40
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• 2021

'过' and '了' are the key points, as well as difficult ones, in the academic study of Chinese grammar and language teaching. This article analyzes this language use by taking two sentence structures as example, namely 'Pao le.' and 'Pao guo le.'. As the semantic meanings of 'V+了2' and 'V+过1+了2' are very similar. Therefore, it can be confusing for non-native speakers to master this usage. This article attempts to sort out and analyze the usage environment and pragmatic characteristics of 'V+过1+了2' by employing the examples from the data of Corpus of the Chinese Linguistics Research Center of Peking University. By focusing on the usage environment and pragmatic characteristics of '过' and it is desirable for teachers to combine semantics, syntax and pragmatics while explaining the grammar point, in order for learners to understand accurate information quickly and learn how to use it.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.352-357
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• 2009

The InAs multi-quantum dots (MQDs) solar cell and InGaAs multi-quantum wells (MQWs) solar cell to cover 1.1 eV and 1.3 eV were designed by 1D poisson, respectively. The MQDs and MQWs of 5, 10, 15 layers were grown by molecular beam epitaxy. The photo luminescence results showed that the 5 period stacked MQDs have the highest intensity at around 1.1 eV with 57.6 meV full width at half maximum (FWHM). Also we can observe 10 period stacked MQWs peak position which has highest intensity at 1.31 eV with 12.37 meV FWHM. The density and size of QDs were observed by reflection high energy electron diffraction pattern and atomic force microscope. Futhermore, AlGaAs/GaAs sandwiched tunnel junctions were modified according to the width of GaAs layer on p-type GaAs substrates. The structures with GaAs width of 30 nm and 50 nm have backward diode characteristics. In contrast, tunnel diode characteristics were observed in the 20 nm of that of sample.

• Journal of the Korea Society of Computer and Information
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• v.20 no.1
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• pp.227-235
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• 2015

In this paper, I propose a linear time algorithm devised to produce exact solution to NP-complete maximum clique problem. The proposed algorithm firstly, from a given graph G=(V,E), sets vertex $v_i$ of the maximum degree ${\Delta}(G)$ as clique's major vertex. It then selects vertex $v_j$ of ${\Delta}(G)$ among vertices $N_G(v_i)$ that are adjacent to $v_i$, only to determine $N_G(v_i){\cap}N_G(v_j)$ as candidate cliques w and $v_k$. Next it obtains $w=w{\cap}N_G(v_k)$ by sorting $d_G(v_k)$ in the descending order. Lastly, the algorithm executes the same procedure on $G{\backslash}w$ graph to compare newly attained cliques to previously attained cliques so as to choose the lower. With this simple method, multiple independent cliques would also be attainable. When applied to various regular and irregular graphs, the algorithm proposed in this paper has obtained exact solutions to all the given graphs linear time O(n).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.4
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• pp.809-813
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• 2010

Although the goals of HL7 Version 2(V2) and Version 3(V3) are identical, the concepts of the implementation and technological basis are different; this makes their versions inconvertible. This problem interrupts technological innovation advanced from V2 to V3 and has been raised as a new type of barrier in the field of medical information system. This study intends to develop software to convert V2 to V3 which can be utilized in the actual medical environment. Since it is practically difficult to develop the whole tools that automatically change total V2 messages into V3 messages, this article has designed, implemented, and tested the software that allows mapping between V2 and V3 which function as tools. In order to test this program, it has used ADT^A03 of five V2 messages to generate V3 messages. It is expected that the result of this research will be one of the new methods allowing conversion between V2 and V3.

• Journal of Korean Society on Water Environment
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• v.23 no.1
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• pp.122-130
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• 2007

This study was conducted to evaluate water treatment characteristics according to vegetated wetland(V) and open water(O) arrangements in free water surface constructed wetland. Three pilot-scale wetlands, V-V, O-V and V-O, were built and operated. $BOD_5$ was a slightly reduced at all the arrangements because the influent concentration was so low as background concentration of constructed wetlands. While T-N and T-P removal efficiency showed higher than 50% for all cases. The O-V arrangement showed the highest removal efficiency: 20% for $BOD_5$, 56% for SS, 59% for T-N and 72% for T-P. Effluent concentration of the O-V were significantly low compared with those from the V-O. O-V arrangement would be beneficial in the light of pollutant removal efficiency as well as construction cost.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.4
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• pp.223-229
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• 2022

In this paper, the ignition trans used in boilers was studied. Regardless of the change in the ignition rod length and the ignition rod gap, the output frequency was measured between 59.5 and 61.3 Hz, and it was found that the low frequency circuit operated normally. When the ignition rod gap changed by 2 to 10 mm, the ignition rod length was measured from 2.8A to 3.45A at 30cm. The ignition rod length was measured from 9.37 A to 14.5 A at 500 cm and from 13.2 A to 32.6 A at 1000 cm. As the ignition rod length and the ignition rod gap increased, the current increased. As a result of measuring the secondary coil output voltage. The ignition rod length was measured from AC 0.84 kV to AC 1.75 kV at 30 cm, AC 1.17 kV to AC 1.944 at 500 cm, and AC 1.4 kV to AC 7.18 kV at 1000 cm. As the ignition rod length and the ignition rod gap increased, the output voltage of the secondary coil also increased. As a result of measuring the output voltage of the ignition trans, the ignition rod length was measured from DC 1.11 kV to DC 1.57 kV at 30cm, DC 2.49 kV to DC 3.72 kV at 500cm, and DC 3.78 kV to DC 9.42 kV at 1000cm, and the power voltage increased as the ignition rod length and interval increased.

• Asian Pacific Journal of Cancer Prevention
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• v.13 no.8
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• pp.3791-3794
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• 2012

CD44v, especially splice variants containing exon v6, has been shown to be related closely to development of different tumors. High levels of CD44v6/v7 have been reported to be associated with invasiveness and metastasis of many malignancies. The objective of this study was to detect expression of CD44v6-containing variants in patients with acute promyelocytic leukemia (APL) and evaluate the potential of CD44v6/v7 for risk stratification. Reverse transcription polymerase chain reaction (RT-PCR) followed by PCR product purification, ligation into T vectors and positive clone sequencing were used to detect CD44 v6-containing variant isoforms in 23 APL patients. Real-time quantitative PCR of the CD44v6/v7 gene was performed in patients with APL and in NB4 cells that were treated with all-trans retinoic acid (ATRA) or arsenic trioxide ($As_2O_3$). Sequencing results identified four isoforms (CD44v6/v7, CD44v6/v8/v10, CD44v6/v8/v9/v10, and CD44v6/v7/v8/v9/v10) in bone marrow mononuclear cells of 23 patients with APL. The level of CD44v6/v7 in high-risk cases was significantly higher than those with low-risk. Higher levels of CD44v6/v7 were found in three patients with central nervous system relapse than in other patients inthe same risk group. Furthermore, in contrast to ATRA, only $As_2O_3$ could significantly down-regulate CD44v6/v7 expression in NB4 cells. Our data suggest that CD44v6/v7 expression may be a prognostic indicator for APL.

• Journal of radiological science and technology
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• v.7 no.1
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• pp.85-92
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• 1984

It is a esperimental report to investigation for optimum window-width on radionuclides $^{131}I\;and\;^{198}Au$ The obtained results were as follow; 1. In case of $^{131}I$, 1) The lowest counts produced at the window-width of 10KeV and 20KeV. 2) The count rate, more increased, when the window-width more opened, but the counting efficiency is very good between 70KeV and 130KeV window-width (19.23% -35.71% about the peak energy). 3) The heighest counting rate per KeV of window appeared at 130KeV window-width. 4) BKG counts increased proportionally to the wider window as 5.473 + 0.016 cpm. 2. In case of $^{198}Au$ 1) The lowest counts appeared at 10KeV and 20KeV window. 2) Count rate more increased, when window-width more opened, but the counting efficiency is very good between 80KeV and 140KeV window (19.46% - 34.06% about the peak energy). 3) The highest counting rate per KeV of the window appeared at 140KeV window. 4) BKG counts increased proportionally to the wider window-width as 4.74 + 1.09 cpm.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.