• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.456-459
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• 2003

In this thesis, We observed the characteristic of the diffraction efficiency according to the wave length of the chalcogenide thin films. The used an $Ag(200{\AA})/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. We made grating formation by each wave length 325nm, 442nm, 632.8nm. After measure diffraction efficiency of the time. We expressed the maxium saturation value at fast time as were the short wavelength and stable characteristic. On the other hand we appeard to the by a maxium diffraction efficiency the 1.7% in 325nm, 0.8% in 442nm, 0.27% in 632.8nm. The maximum diffraction efficiency expressed high value as were the long wavelength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1058-1061
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• 2003

In this thesis, we observed the optical characteristic of amorphous chalcogenide thin films by He-Cd laser. Also, grating formation by He-Ne laser and He-Cd laser. After analyze diffraction efficiency of the time on the $Ag(200{\AA})/As_{40}Ge_{10}Se_{15}S_{35}$ thin films. The result diffraction efficiency of Maximun 0.2% reduced according to time grating formation by He-Ne laser. Diffraction efficiency of Maximun 0.1% showed stabiliy characteristic according to time grating formation by He-Cd laser.