• 대한기계학회논문집
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• 제9권2호
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• pp.150-157
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• 1985

본 연구에서는 자연적인 미소흠함주위에 발생, 전파하는 피로크랙의 거동을 검토하기 위하여, 기존재료가 갖고 있는 흠함이나 비금속개재물을 대신할 수 있다고 생각되는 크기가 다른 비관통 인공미성구멍을 갖는 여러 종류의 시험편을 준비하고, 이 시험편들이 갖는 인공미성구멍주위에 발생전파하는 피로크랙의 거동을, 금속현미경 관찰을 토대로 상세히 고찰하였다. 그리고 이러한 관찰을 기초로 하여 비관통인공미 성구멍의 대성에 따른 피로한계도거동에 대해서도 고찰하였다.

• 풍력에너지저널
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• 제14권3호
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• pp.83-90
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• 2023

The purpose of this study is to evaluate the inter-laminar fracture toughness characteristics of CFRP pultrusion spar cap materials reinforced with non-woven glass fabric. Test specimens were fabricated by the infusion technique. A non-woven glass fabric and artificial defects were embedded on the middle surface between two pultruded CFRP panels. Double cantilever beam (DCB) and End Notched Flexure (ENF) tests were performed according to ASTM standards. Fracture toughness and crack propagation characteristics were evaluated with load-displacement curves and delamination resistance curves (R-Curve). The fracture toughness results were calculated by compliance calibration (CC) method. The initiation and propagation values of Mode-I critical strain energy release rate value G_Ic were 1.357 kJ/m2 and 1.397 kJ/m2, respectively, and Mode-II critical strain energy release rate values G_IIc were 4.053 kJ/m2 for non-precracked test and 4.547 kJ/m2 for precracked test. It was found that the fracture toughness properties of the CFRP pultrusion spar-cap are influenced by the interface between the layers of CFRP and glass fiber non-woven.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Maxillofacial Plastic and Reconstructive Surgery
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• 제31권6호
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• pp.469-477
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• 2009

육안적 검사결과 실험군과 대조군 모두에서 특별한 염증 소견이나 창상 이개 없이 반원 모양의 골형성이 관찰되었다. 조직학적으로 3주째에 대조군, 실험 1군, 실험2군, 실험 3군 모두 이식골 주위 및 티타늄 반구 내면을 따라 신생 골형성이 관찰되었다. 조직학적으로 6주째에 모든 군에서 3주째에 비하여 신생골 면적의 증가 및 성숙 소견이 관찰되었고, 실험2군에서는 부분적으로 이식골이 흡수되면서 신생골이 형성되는 것이 관찰된 반면, 실험 3군에서는 이식골의 흡수 소견이 관찰되지 않았다. 조직형태계측학적으로 3주, 6주 모두 자가골에서 가장 많은 신생골 형성이 나타났고, 신생골 면적 비교시 자가골, 이종골, 합성골 순으로 크게 나타났고, 각 군간의 통계학적으로 유의한 차이는 없었다(p>0.05). 본 연구결과 골유도 재생술시 골형성 능력은 자가골이 가장 좋지만, 자가골 채취가 불가능할 경우, 적절한 차폐막을 사용한 합성골과 이종골 복합 이식방식도 좋은 대체제가 될 것으로 생각된다.