• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.45-52
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• 2011

It is known that test methods to evaluate solder joint reliability are die shock test, die shear test, 3points bending test, and thermal shock test. The present study investigated the effects of failure mode on 3 types (as-reflowed, $85^{\circ}C$/85%RH treatment, and $150^{\circ}C$/10hr aging) of solder joints for flip-chip BGA package by using various test methods. The test methods and configurations are reported in detail, i.e. die shock, die shear, 3points bending, and thermal shock test. We focus on the failure mode of solder joints under various tests. The test results indicate that die shock and die shear test method can reveal brittle fracture in flip-chip ball grid array (FCBGA) packages with higher sensitivity.

• Journal of Advanced Navigation Technology
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• v.21 no.4
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• pp.386-393
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• 2017

Field programmable gate arrays (FPGAs) are widely used for verification in chip development. In order to verify the circuit programmed to the FPGA, data must be input to the FPGA. There are many ways to communicate with a chip through a PC and an external board, but the simplest and easiest way is to use a universal asynchronous receiver/transmitter (UART). Most recently, most circuits are designed to be internally connected to the advanced microcontroller bus architecture (AMBA) bus. In other words, to verify the designed circuit easily and simply, data must be transmitted through the AMBA bus through the UART. Also the AMBA bus has been available in various versions since version 4.0 recently. Advanced peripheral bus (APB) is suitable for simple testing. In this paper, we design a circuit for UART-to-APB interface. Circuits designed using Verilog-HDL were implemented in Altera Cyclone FPGAs and were capable of operating at speeds up to 380 MHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.111-124
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• 2002

The ferroelectric RAM (FeRAM) has a great advantage for a system on a chip (SOC) and mobile product memory, since FeRAM not only supports non-volatility but also delivers a fast memory access similar to that of DRAM and SRAM. This work develops at three levels: 1) low voltage operation with boost voltage control of bitline and plateline, 2) reducing bitline capacitance with multiple divided sub cell array, and 3) increasing chip performance with write operation sharing both active and precharge time period. The key techniques are implemented on the proposed hierarchy bitline scheme with proposed hybrid-bitline and high voltage boost control. The test chip and simulation results show the performance of sub-1.5 voltage operation with single step pumping voltage and self-boost control in a cell array block of 1024 ($64{\;}{\times}{\;}16$) rows and 64 columns.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.1-10
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• 2001

Chip-on-glass(COG) mounting of area array electronic packages was attempted by heating the rear surface of a contact pad film deposited on a glass substrate. The pads consisted of an adhesion (i.e. Cr or Ti) and a top coating layer(i.e. Ni or Cu) were healed by the UV laser beam transmitted through the glass substrate. The lather energy absorbed on the pad raised the temperature of a solder ball which is in physical contact with the pad, and formed a reflowed solder bump. The effects of the adhesion and top coating layer on the laser reflow soldering were studied by measuring temperature profile of the ball during the laser heating process. The results were discussed based on the measurement of reflectivity of the adhesion layer. In addition, the microstructures of solder bumps and their mechanical properties were examined.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.184-193
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• 2015

This paper proposes a cost-efficient and automatic method for large data acquisition from a test chip without expensive equipment to characterize random process variation in an integrated circuit. Our method requires only a test chip, a personal computer, a cheap digital-to-analog converter, a controller and multimeters, and thus large volume measurement can be performed on an office desk at low cost. To demonstrate the proposed method, we designed a test chip with a current model logic driver and an array of 128 current mirrors that mimic the random process variation of the driver's tail current mirror. Using our method, we characterized the random process variation of the driver's voltage due to the random process variation on the driver's tail current mirror from large volume measurement data. The statistical characteristics of the driver's output voltage calculated from the measured data are compared with Monte Carlo simulation. The difference between the measured and the simulated averages and standard deviations are less than 20% showing that we can easily characterize the random process variation at low cost by using our cost-efficient automatic large data acquisition method.

• IMMUNE NETWORK
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• v.6 no.3
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• pp.128-137
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• 2006

Background: Apoptosis is a physiologic phenomenon involved in development, elimination of damaged cells, and maintenance of cell homeostasis. Deregulation of apoptosis may cause diseases, such as cancers, immune diseases, and neurodegenerative disorders. The mouse myeloma cell P3-X63-Ag8.653 (v653) is an HGPRT deficient $(HGPRT^-)$ mutant strain. High dependency on de novo transcription and translation of aminopterin induced apoptosis of this cell seems to be an ideal experimental system for searching apoptosis-induced genes. Methods & Results: For searching apoptosis-related genes we carried out GE-array (dot blot), Affymetrix GeneChip analysis, Northern analysis and differential display-PCR techniques. The chip data were analyzed with three different programs. 66 genes were selected through Affymetrix GeneChip analyses. All genes selected were classified into 8 groups according to their known functions. They were Genes of 1) Cell growth/maintenance/death/enzyme, 2) Cell cycle, 3) Chaperone, 4) Cancer/disease-related genes, 5) Mitochondria, 6) Membrane protein/signal transduction, 7) Nuclear protein/nucleic acid binding/transcription binding and 8) Translation factor. Among these groups number of genes were the largest in the genes of cell growth/maintenance/death/enzyme. Expression signals of most of all groups were peaked at 3 hour of apoptosis except genes of Nuclear protein/nucleic acid binding/transcription factor which showed maximum signal at 1 hour. Conclusion: This study showed induction of wide range of proapoptotic factors which accelerate cell death at various stage of cell death. In addition apoptosis studied in this research can be classified as a type 2 which involves cytochrome c and caspase 9 especially in early stages of death. But It also has progressed to type 1 in late stage of the death process.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.33-38
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• 2017

In this paper, a 4-channel common-cathode VCSEL diode driver array with 3.125 Gb/s per channel operation speed is realized. In order to achieve faster speed of the switching main driver with relatively large transistors, the transmitter array chip consists of a pre-amplifier with active inductor stage and also an input buffer with modified equalizer, which leads to bandwidth extension and reduced current consumption. The utilized VCSEL diode provides inherently 2.2 V forward bias voltage, $50{\Omega}$ resistance, and 850 fF capacitance. In addition, the main driver based upon current steering technique is designed, so that two individual current sources can provide bias currents of 3.0 mA and modulation currents of 3.3 mA to VCSEL diodes. The proposed 4-channel VCSEL driver array has been implemented by using a $0.11-{\mu}m$ CMOS technology, and the chip core occupies the area of $0.15{\times}0.18{\mu}m^2$ and dissipates 22.3 mW per channel.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.6
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• pp.613-624
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• 2011

An MMIC multi-function chip for an X-band active phased array radar system has been designed and fabricated using a 0.5 ${\mu}m$ GaAs p-HEMT commercial process. A digital serial-to-parallel converter is included in this chip in order to reduce the number of the control interface. The multi-function chip provides several functions: 6-bit phase shifting, 6-bit attenuation, transmit/receive switching, and signal amplification. The fabricated multi-function chip with a relative compact size of 24 $mm^2$(6 mm${\times}$4 mm) exhibits a transmit/receive gain of 24/15 dB and a P1dB of 21 dBm from 8.5 GHz to 10.5 GHz. The RMS errors for the 64 states of the 6-bit phase shift and attenuation were measured to $7^{\circ}$ and 0.3 dB, respectively over the frequency.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.921-926
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• 2003

This paper describes a new type of the spatial filter detector (SFD) with variable and multi-valued weighting function. This SFD called variable spatial filter detector with multi-valued weighting function (VSFDwMWF) uses current-mode circuits for noise resistance and high-resolution weighting values. Total weighting values consist of 7bit, 6-signal bit and 1-sign bit. We fabricate VSFDwMWF chip using Rohm 0.35${\mu}$m CMOS process. VSFDwMWF chip includes two-dimensional 10${\times}$13 photodiode array and current-mode weighting control circuit. Simulation shows the weighting values are varied and multi-valued by external switching operation. The layout of VSFDwMWF chip is shown.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.456-462
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• 2002

In the present work, a low cost and fine pitch bumping process by electroless Ni/immersion Au UBM (under bump metallurgy) and stencil printing for the solder bump on the Al pad is discussed. The Chip used this experimental had an array of pad 14x14 and zincate catalyst treatment is applied as the pretreatment of Al bond pad, it was shown that the second zincating process produced a dense continuous zincating layer compared to first zincating. Ni UBM was analyzed using Scanning electron microscopy, Energy dispersive x-ray, Atomic force microscopy, and X-ray diffractometer. The electroless Ni-P had amorphous structures in as-plated condition. and crystallized at 321 C to Ni and Ni$_3$P. Solder bumps are formed on without bridge or missing bump by stencil print solder bump process.