• 대한기계학회논문집B
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• 제30권5호
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• pp.397-404
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• 2006

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine chemical quenching phenomenon which is caused by radical adsorption and recombination processes on the surface, thermally grown silicon oxide plates with well-defined defect density were prepared. ion implantation technique was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). It has been found that as the ion energy is increased, the number of structural defect is also increased and non-stoichiometric condition of $SiO_x({\le}2)$ is enhanced.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2005년도 제31회 KOSCO SYMPOSIUM 논문집
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• pp.328-336
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• 2005

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine the chemical quenching phenomenon, we prepared thermally grown silicon oxide plates with well-defined defect density. Ion implantation was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove the oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}C$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). The analysis shows that as the ion energy increases, the number of structural defect also increases and non-stoichiometric condition of $SiO_x(x{\le}2)$ plates is enhanced. From the quenching distance measurements, we found out that when the surface temperature is under $300^{\circ}C$, the quenching distance decreases on account of reduced heat loss; as the surface temperature increases over $300^{\circ}C$, however, quenching distance increases despite reduced heat loss effect. Such aberrant behavior is caused by heterogeneous chemical reaction between active radicals and surface defect sites. The higher defect density, the larger quenching distance. This results means that chemical quenching is governed by radical adsorption and can be parameterized by the oxygen vacancy density on the surface.

• 한국게임학회 논문지
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• 제9권5호
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• pp.105-115
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• 2009

본 논문에서는 증강현실 게임에서의 동작 기반 상호작용의 설계 및 구현 기법을 기술한다. 증강현실에서는 상호작용의 도구로 고전적인 입력 장치보다 사용자의 동작에 의존한다. 동작 기반 증강현실 게임은 신체적 움직임에 의한 상호작용을 사용하는 실감 게임의 유망한 분야이나 현재의 동작 인식 기술의 불안정성으로 인해서 증강현실 응용에서 동작 인식 장치를 주 입력 장치로 사용하는 데에는 한계가 있다. 이러한 한계에 대처하기 위해서 각 증강현실 응용들은 여러 보완수단들을 동원하고 있고 이로 인해서 증강현실 게임의 구조가 불규칙적이며 비효율적으로 설계되는 경향이 있다. 본 논문에서는 동작 기반 증강현실 게임의 효율적인 개발 방법론을 제시한다. 실제 탁구채를 사용하는 동작 인터페이스를 가지는 증강현실 탁구게임의 프로토타입을 제시된 방법론에 따라서 설계하고 이를 구현하였다. 구현된 증강현실 게임에서의 상호작용에 있어서 탁구채를 고속으로 인식하고 지연 없이 상호작용 됨을 확인하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.55-55
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• 2018

Recently, amorphous oxides such as InGaZnO (IGZO) and InZnO (IZO) as a channel layer of an oxide TFT have been attracted by advantages such as high mobility, good uniformity, and high transparency. In order to apply such an amorphous oxide TFTs to a display, the stability in various environments must be ensured. In the InGaZnO which has been studied in the past, Ga elements act as a suppressor of oxygen vacancy and result in a decreased mobility at the same time. Previous studies have been showed that the InZnO, which does not contain Ga, can achieve high mobility, but has relatively poor stability under various instability environments. In this study, the TFTs using $IZO/Al_2O_3$ double layer structure were studied. The introduction of an $Al_2O_3$ interlayer between source/drain and channel causes superior electrical characteristics and electrical stability as well as reduced contact resistance with optimally perfect ohmic contact. For the IZO and $Al_2O_3$ bilayer structures, the IZO 30nm IZO channels were prepared at $Ar:O_2=30:1$ by sputtering and the $Al_2O_3$ interlayer were depostied with various thickness by ALD at $150^{\circ}C$. The optimal sample exhibits considerably good TFT performance with $V_{th}$ of -3.3V and field effect mobility of $19.25cm^2/Vs$, and reduced $V_{th}$ shift under positive bias stress stability, compared to conventional IZO TFT. The enhanced TFT performances are closely related to the nice ohmic contact properties coming from the defect passivation of the IZO surface inducing charge traps, and we will provide the detail mechanism and model via electrical analysis and transmission line method.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2003년도 제20회 춘계학술대회 논문집
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• pp.32-33
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• 2003

Mechanism of a periodic oscillation of shock-induced combustion over a two- dimensional wedges and axi-symmetric cones were investigated through a series of numerical simulations at off-attaching condition of oblique detonation waves(ODW). A same computational domain over 40 degree half-angle was considered for two-dimensional and axi-symmetric shock-induced combustion phenomena. For two-dimensional shock-induced combustion, a 2H2+02+17N2 mixture was considered at Mach number was 5.85with initial temperature 292 K and initial pressureof 12 KPa. The Rankine-Hugoniot relation has solution of attached waves at this condition. For axi-symmetric shock-induced combustion, a H2+2O2+2Ar mixture was considered at Mach number was 5.0 with initial temperature 288 K and initial pressure of 200 mmHg. The flow conditions were based on the conditions of similar experiments and numerical studies.[1, 3]Numerical simulation was carried out with a compressible fluid dynamics code with a detailed hydrogen-oxygen combustion mechanism.[4, 5] A series of calculations were carried out by changing the fluid dynamic time scale. The length wedge is varied as a simplest way of changing the fluid dynamic time scale. Result reveals that there is a chemical kinetic limit of the detached overdriven detonation wave, in addition to the theoretical limit predicted by Rankine-Hugoniot theory with equilibrium chemistry. At the off-attaching condition of ODW the shock and reaction waves still attach at a wedge as a periodically oscillating oblique shock-induced combustion, if the Rankine-Hugoniot limit of detachment isbut the chemical kinetic limit is not.Mechanism of the periodic oscillation is considered as interactions between shock and reaction waves coupled with chemical kinetic effects. There were various regimes of the periodicmotion depending on the fluid dynamic time scales. The difference between the two-dimensional and axi-symmetric simulations were distinct because the flow path is parallel and uniform behind the oblique shock waves, but is not behind the conical shock waves. The shock-induced combustion behind the conical shockwaves showed much more violent and irregular characteristics.From the investigation of characteristic chemical time, condition of the periodic instability is identified as follows; at the detaching condition of Rankine-Hugoniot theory, (1) flow residence time is smaller than the chemical characteristic time, behind the detached shock wave with heat addition, (2) flow residence time should be greater than the chemical characteristic time, behind an oblique shock wave without heat addition.