• Applied Science and Convergence Technology
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• 제25권6호
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• pp.145-148
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• 2016

This paper, Al-doped ZnO(AZO) thin films for application as transparent conducting oxide films were deposited on the Corning glass substrate by using RF magnetron sputtering system. The effects of various Argon gas flow rates on optical and electrical characteristics of AZO films were investigate sputtering method. The Carrier Concentration is enhanced as Ar gas rate increases, and also the oxygen vacancy concentration. The figure of merit obtained in this study means that AZO films which deposited Ar gas rate of 75 sccm have the highest Carrier concentration and Hall mobility, which have the highest photoelectrical performance that it could be used as transparent electrodes.

• 한국분말재료학회지
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• 제17권5호
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• pp.379-384
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• 2010

In the present work, bismuth nanopowders with various particle size distributions were synthesized by controlling argon (Ar) gas flow rate and chamber pressure of a gas condensation (GC) apparatus. From the analyses of transmission electron microscopy (TEM) images and nitrogen gas adsorption results, it was found that as Ar gas flow rate increased, the specific surface area of bismuth increased and the average particles size decreased. On the other hand, as the chamber pressure increased, the specific surface area of bismuth decreased and the average particles size increased. The optimum gas flow rate and chamber pressure for the maximized electrochemical active surface area were determined to be 8 L/min and 50 torr, respectively. The bismuth nanopowders synthesized at the above condition exhibit 13.47 $m^2g^{-1}$ of specific surface area and 45.6 nm of average particles diameter.

• 약학회지
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• 제39권5호
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• pp.480-486
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• 1995

The change in discharge current of a glow discharge has been shown the potential sensitive detector for gas chromatography. To investigate the effect of carrier gas on the electrical characteristics of the discharge and the peak response, the discharge pressure, gas flow rate, and discharge gap have been studied. The discharge gas included the Ar, He, and N$_{2}$. The gas flow rate has been found one of the important parameters to affect both the electrical characteristics and the peak response.

• 한국표면공학회지
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• 제35권2호
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• pp.113-121
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• 2002

We have investigated insulating properties of $SiO_2$ interlayer for the thin film strain gauge, which were prepared by RF magnetron sputtering method in various deposition conditions, such as Ar pressure, gas flow rates and sputtering gases. SEM, AFM and FT-IR techniques were used to analyze its structures and composition. As the Ar pressure and the flow rate increased, the insulating interlayer showed low insulating resistance due to its porous structure and defects. Oxygen deficiency in $SiO_2$ was decreased as fabricated by hydrogen reactive sputtering. We could enhance the surface mobility of sputtered adatoms by using Ar/$H_2$ sputtering gas and obtain a good surface roughness and insulating property. The optimum insulating resistance of 9.22 G$\Omega$ was obtained in Ar/30% $H_2$ mixed gas, flow rate 10sccm, and 1mTorr.

• Transactions on Electrical and Electronic Materials
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• 제10권6호
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• pp.203-207
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• 2009

We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of ITO thin films intended for use as anode contacts in OLED (organic light emitting diodes) devices. These ITO thin films are deposited by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at $300{^{\circ}C}$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.5 sccm to 5 sccm and from 0.01 sccm to 0.25 sccm, respectively. The intensity of the (400) peak in the ITO thin films increased with increasing $O_2$, flow rate whilst the (400) peak was nearly invisible in an atmosphere of Ar+$H_2$. The electrical resistivity of the ITO thin films increased with increasing $O_2$ flow rate, whereas the electrical resistivity decreased sharply under an Ar+$H_2$ atmosphere and was nearly similar regardless of the $H_2$ flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed an average transmittance of over 80% in the visible range. The OLED device was fabricated with different ITO substrates made with the configuration of ITO/$\alpha$-NPD/DPVB/$Alq_3$/LiF/Al in order to elucidate the performance of the ITO substrate. Current density and luminance of OLED devices with ITO thin films deposited in Ar+$H_2$ ambient gas is the highest among all the ITO thin films.

• 한국세라믹학회지
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• 제40권12호
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• pp.1165-1169
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• 2003

이중 이온빔 스퍼터링(Dual ion-beam sputtering)을 사용하여 보조이온건의 Ar/O$_2$가스유량 변화에 따라 Si-(III) 기판과 glass에 Ta$_2$O$_{5}$ 박막을 증착시켰다. 보조 이온총의 산소 가스량의 비가 감소함에 따라서 증착되는 Ta$_2$O$_{5}$ 박막의 성장속도는 감소하였으며, 굴절률은 $O_2$ 가스의 양이 0∼12sccm인 범위에서 2.09(at 1550nm)로 일정한 값을 나타내었다. Ar:O$_2$가 3: 12인 조건에서 화학양론 조성인 Ta$_2$O$_{5}$를 형성하였으며, 표면 거칠기도 가장 작은 값을 나타내었다.나타내었다.

• 전자공학회논문지A
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• 제30A권12호
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• pp.69-76
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• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.139.2-139.2
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• 2013

6" Multi-crystal Silicon wafer has etched suing a remote - type RF Dielectric barrier discharge (RF DBD) at atmospheric pressure. DBD source is composed of Al electrode and coated Al2O3 dielectric as function of Ar/NF3 gas combination and input power used 13.56 MHz power supply. Ar gas flow rate is changed from 2 to 10 Slm, and NF3 flow rate is changed from 0.2~1 slm. At the result, NF3 flow rate Si etching rate also increase whit the increasing of NF3 flow rate But at 2 slm etching rate was decrease. In this experience, Max etching rate is 2.3 ${\mu}m/min$ when the scan time is 45 sec.

• 한국레이저가공학회지
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• 제10권4호
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• pp.1-6
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• 2007

This study includes the effects of shielding gas types and flow rate on Nd:YAG Laser weldability of sintered material. The types of shielding gas were evaluated for He, Ar and N2. Bending strength, porosity rate, hardness and aspect ratio testing of laser weld are carried out to evaluated the weldability. As a results, Ar gas was showed the best welding strength even it has the most porosity content on weld metal, and depend on increases the gas flow rate, it was not only got deeper penetration depth but also showed higher bending strength. Therefore we could know that bending strength is not only affect the porosity content but also melting area.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.521-522
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• 2006

In this paper, hybrid air-water discharges were used to develop an optimal condition for providing a high level of water decomposition for hydrogen yield. Electrical and optical phenomena accompanying the discharges were investigated along with feeding gases, flow rates, and point-to-plane electrode gap distance. The primary focus of this experiment was put on the optical emission of the near UV range, with the energy threshold sufficient for water dissociation and excitation. The $OH(A^{2+},'=0\;X^2,"=0$) band's optical emission intensity indicated the presence of plasma chemical reactions involving hydrogen formation. In the gaseous atmosphere saturated with water vapor the OH(A-X) band intensity was relatively high compared to the liquid and transient phases although the optical emission strongly depended on the flow rate and type of feeding gas. In the gaseous phase discharge phenomenon for Ar carrier gas transformed into a gliding arc via the flow rate growth. OH(A-X) band's intensity increased according to the flow rate or residence time of He feeding gas. Reciprocal tendency was acquired for $N_2$ and Ar carrier gases. The peak value of OH(A-X) intensity was observed in the proximity of the water surface, however in the cases of Ar and $N_2$ with 0.5 SLM flow rate peaks shifted to the region below the water surface. Rotational temperature ($T_{rot}$) was estimated to be in the range of 900-3600 K, according to the carrier gas and flow rate, which corresponds to the arc-like-streamer discharge.