• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.39-44
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• 2011

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under oxygen ambient gases (Ar, $Ar+O_2$) at room temperature. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $O_2$ under $Ar+O_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/a-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.7-11
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• 2008

ITO (Indium Tin Oxide) thin films have been extensively studied for OLED devices because they have high transparent properties in the visible wavelength and a low electrical resistivity. These ITO films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$ and Ar+$H_2$) at $300^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon has been changed from 0.5sccm to 5sccm and from 0.01sccm to 0.25sccm respectively. The resistivity of ITO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while it is nearly constant under Ar+$H_2$. And the peak of ITO films obtained (222) and (400) orientations and the average transmittance was over 80% in the visible range. The OLED device fabricated with different ITO substrates made by configuration of ITO/$\alpha$-NPD/Alq3/LiF/Al to elucidate the performance of ITO substrate for OLED device.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.53-58
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• 2010

In this study, we have investigated the effect of the ambient gases on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various ambient gases (Ar, $Ar+O_2$ and $Ar+H_2$) at $150^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm, respectively. All the samples show amorphous structure regardless of ambient gases. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$ while under $Ar+H_2$ atmosphere the electrical resistivity showed minimum value near 0.5sccm of $H_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made by configuration of IZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current densityvoltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of Hydrogen and New Energy
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• v.14 no.1
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• pp.8-16
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• 2003

$TiO_2$ thin films were deposited by DC reactive magnetron sputtering with variations in sputtering parameter such as Ar and $O_2$ flow rate, DC power, substrate temperature and magnetic field. Deposition rate, crystal structure, chemical bond of $TiO_2$ films on the deposition conditions were investigated by Alpha-step, X-ray Diffractometer(XRD), X-ray Photoelectron Spectroscopy(XPS). When the DC power was applied at 500watt, deposition rate of $TiO_2$ film was about 480A/min. $TiO_2$ films coated under the deposition condition of 15sccm Ar and 7~10sccm $O_2$ flow rate was only observed anatase phase. With increasing substrate temperature from RT to $300^{\circ}C$, crystal orientation of $TiO_2$ films variously became.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.131-138
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• 1997

Silicon carbide films were chemically vapor deposited onto graphite substrates using MTS(Ch3SiCl3) as a source and Ar or H2 as a diluent gas. The experiments were performed at a fixed condition such as a de-position temperature of 130$0^{\circ}C$, a total pressure of 10 torr, and a flow rate of 100 sccm for each MTS and carrier gas. The purpose of this study is to consider the variation of the growth behavior with the addition of each diluent gas. It is shown that the deposition rate leads to maximum value at 200 sccm addition ir-respective of diluent gases and the deposition rate of Ar addition is faster than that of H2 one. It seems that these characteristics of deposition rate are due to varying interrelationship between boundary layer thick-ness and the concentration of a source with each diluent gas addition, when overall deposition rate is con-trolled by mass transport kinetics. The preferred orientation of (220) plane was maintained for the whole range of Ar addition. However, above 200 sccm addition, especially that of (111) plane was more increased in proportion to H2 addition. Surface morphologies of SiC films were the facet structures under Ar addition, but those were gradually changed from facet to smooth structures with H2 addition. Surface roughness be-came higher in Ar, but it became lower in H2 with increasing the amount of diluent gas.

• Analytical Science and Technology
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• v.30 no.2
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• pp.82-88
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• 2017

Adenophorae Radix (AR) is a frequently used medicinal herb; because of its popularity, products containing similar herbal products are often sold as substitutes, especially if their morphology is similar. However, any analytical method to identify AR based on quantitative analysis is not registered in Korea, Japan and China Pharmacopoeias. This study developed a simple HPLC method to discriminate between authentic AR and substitutes. Linoleic acid was used as a marker compound of AR. Our optimized HPLC-UV conditions included a mobile phase of 90 % acetonitrile under isocratic condition, and a flow rate of 1.0 mL/min at room temperature. Detection wavelength was set at 205 nm. Linoleic acid was detected at 13.5 minutes for a total analysis time of 20 minutes. The standard herb of AR contained 0.025 % of linoleic acid, while four authentic AR samples and eight substitutes contained 0.040~0.071 % and 0.004~0.014 %, respectively. Comparison of the linoleic acid concentrations of the sample types to reference AR showed that among 12 samples, only the four samples were authentic. Thus, our HPLC-UV method, along with our suggested content criterion for linoleic acid concentration, can be used for the quick and accurate determination whether the herbal products are authentic AR or substitute.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.18 no.2
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• pp.169-177
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• 2020

Here, the stability of stainless steel 316 (SS-316) was investigated to identify its applicability in the oxide reduction process, as a component in related equipment, to produce a complicated gas mixture composed of O₂ and Cl₂ under an argon (Ar) atmosphere. The effects of the mixed gas composition were investigated at flow rates of 30 mL/min O₂, 20 mL/min O₂ + 10 mL/min Cl₂, 10 mL/min O₂ + 20 mL/min Cl₂, and 30 mL/min Cl₂, each at 600℃, during a constant argon flow rate of 170 mL/min. It was found that the corrosion of SS-316 by the chlorine gas was suppressed by the presence of oxygen, while the reaction proceeded linearly with the reaction time regardless of gas composition. Surface observation results revealed an uneven surface with circular pits in the samples that were fed mixed gases. Thermodynamic calculations proposed the combination of Fe and Ni chlorination reactions as an explanation for this pit formation phenomenon. An exponential increase in the corrosion rate was observed with an increase in the reaction temperature in a range of 300 ~ 600℃ under a flow of 30 mL/min Cl₂ + 170 mL/min Ar.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.458-458
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• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.6
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• pp.418-426
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• 2009

The effect of an inertia moment of a pump flywheel on the thermal-hydraulic behaviors of the KALIMER-600(Korea Advanced LIquid MEtal Reactor) reactor pool during an early-phase of a loss of normal heat sink accident was investigated. The thermal-hydraulic analyses for a steady and a transient state were made by using the COMMIX-1AR/P code. In the present analysis a quarter of the reactor geometry was modeled in a cylindrical coordinate system, which includes a quarter of a reactor core and a UIS, a half of a DHX and a pump and a full IHX. In order to evaluate the effects of an inertia moment of the pump flywheel, a coastdown flow whose flow halving time amounts to 3.69 seconds was supplied to a natural circulation flow in the reactor vessel. Thermal-hydraulic behaviors in the reactor vessel were compared to those without the flywheel equipment. The numerical results showed a good agreement with the design values in a steady state. It was found that the inertia moment contributes to an increase in the circulation flow rate during the first 40 seconds, however to a decrease of it there after. It was also found that the flow stagnant region induced by a core exit overcooling decelerated the flow rate. The appearance of the first-peak temperature was delayed by the flow coastdown during the initial stages after a reactor trip.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.124-125
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• 2005

ZnS:Mn thin films have attracted great interest as electroluminescence devices. In this study, inductively coupled BCl$_3$/Ar plasma was used to etch ZnS:Mn thin films. We obtained the maximum etch rate of ZnS:Mn thin films was 2209 ${\AA}$/min at a BCl$_3$(20%)/Ar(80%) gas mixing ratio, an RF power of 700 W, a DC bias voltage of-250 V, a total gas flow of 20 sccm, and a chamber pressure of 1 Pa. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.