• 제목/요약/키워드: Ar Addition

검색결과 637건 처리시간 0.022초

Effects of Acanthopanax sessiliflorus on Immune Cells such as Thymocytes, Splenocytes and Macrophages in Mice

  • Kim, Hyung-Woo;Kim, Gye-Yeop;Jeon, Byung-Gwan;Choi, Jeong-Sik;Jeong, Hyun-Woo;Cho, Su-In
    • 대한한방내과학회지
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    • 제28권2호
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    • pp.377-384
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    • 2007
  • Objective : Immune potentiation including activation of T cells, B cells, macrophages, and dendritic cells is known to play a key role in prevention and treatment of patients with cancer. In this study, we investigated the effects of Acanthopanax sessiliflorus (AR) on the immune system, especially on thymocytes, splenocytes, and macrophages. Methods : We investigated the effects of AR on proliferation of splenocytes in normal mice, and the effects on proliferation of splenocytes and thymocytes in tumor-bearing mice. In addition, the effect of AR on NO production using macrophages was investigated. Results : Treatment with AR accelerated proliferation of splenocytes in vitro. AR also accelerated thymocyte proliferation, but did not affect splenocytes proliferation in normal mice. In contrast, AR accelerated proliferation of splenocytes and thymocytes significantly in tumor bearing mice. In addition, NO production level from macrophages was elevated by treatment with AR. Conclusion : These results demonstrate that AR has anti-cancer activities and related mechanisms are involved in immune potentiation such as acceleration of immune cell proliferation and elevation of NO production level in macrophages. In addition, we also demonstrate the possibilities of AR as complementary and alternative medicine to standard anti-cancer drugs.

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희석기체가 화학증착 탄화규소의 성장거동에 미치는 영향 (The Effect of Diluent Gases on the Growth Behavior of CVD SiC)

  • 최두진;김한수
    • 한국세라믹학회지
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    • 제34권2호
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    • pp.131-138
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    • 1997
  • 희석기체로써 Ar 및 H2를 사용하여 MTS(CH3SiCl3)를 원료물질로 한 탄화규소막을 흑연 기판 위에 화학증착시켰다. 본 연구는 증착온도 130$0^{\circ}C$, 총압력은 10 torr 및 MTS와 원료 운반기체의 총유량은 100 sccm으로 일정하게한 상태에서, 각 희석기체의 첨가에 따른 성장거동의 변화를 고찰하고자 하였다. 증착속도는 희석기체와 상관없이 첨가량이 200sccm일 때 최대값을 갖는 모양을 보였으나, Ar을 첨가할 때가 H2에 비해 더 빠른 증착속도를 나타냈다. 이러한 증착속도 특성은 전체 증착속도가 물질전달 율속단계에 있을 때, 각 희석기체의 첨가에 따라 변화되는 경막 두께(boundary layer thickness) 및 원료물질 농도의 상관관계에 기인한다고 여겨졌다. 우선배향성은 Ar의 경우 모든 첨가량의 범위에서 (220)면으로 우선배향되었으나, H2의 경우에는 200sccm이상에서 첨가량에 비례하여 (111)면으로 우선배향되는 경향을 보였다. 표면미세구조는 Ar을 첨가한 경우에 일정하게 facet구조를 유지하였으나, H2의 경우에는 facet에서 평탄한(smooth)구조로 변화되었다. 표면조도의 경우 첨가량이 늘어남에 따라 지속적으로 Ar에서는 증가하였지만, H2에서는 감소하였다.

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Bosch 공정에서 Si 식각속도와 식각프로파일에 대한 Ar 첨가의 영향 (Effects of Ar Addition on the Etch Rates and Etch Profiles of Si Substrates During the Bosch Process)

  • 지정민;조성운;김창구
    • Korean Chemical Engineering Research
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    • 제51권6호
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    • pp.755-759
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    • 2013
  • Bosch 공정의 식각 단계에서 Ar을 첨가하였을 때 Si의 식각특성을 관찰하기 위하여 식각 단계에서 $SF_6$ 플라즈마만 사용한 경우와 Ar 유속비율이 20%인 $SF_6$/Ar 플라즈마를 각각 사용하여 Si을 Bosch 공정으로 식각하였다. Bosch 공정의 식각 단계에서 $SF_6$ 플라즈마에 Ar 가스를 첨가하면 $Ar^+$ 이온에 의한 이온포격이 증가하였고 이는 Si 입자의 스퍼터링을 초래할 뿐 아니라 F 라디칼과 Si의 화학반응을 가속하였다. 그 결과 식각 단계에서 20%의 Ar이 첨가되어 Bosch 공정으로 수행된 Si의 식각속도는 Ar이 첨가되지 않은 경우보다 10% 이상 빨라졌고 식각프로파일도 더욱 비등방적이었다. 이 연구의 결과는 Bosch 공정으로 Si을 식각할 때 식각속도와 식각프로파일의 비등방성을 개선하는데 필요한 기초자료로 사용될 수 있을 것으로 판단된다.

Studies on In Vitro Capacitation by Lysolecithin and In Vitro Fertilizing Ability of Ejaculated Rabbit Sperm

  • Kim, C.K.;Im, K.S.;Zheng, X.;Foote, R.H.
    • 한국가축번식학회지
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    • 제10권1호
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    • pp.109-120
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    • 1986
  • This study was conducted to define the effect of addition of lysolecithin (LC) and 20% v/v rabbit serum to sperm preincubation medium on the induction of acrosome reaction (AR) an fertilizing ability in vitro of LG-added sperm. Ejaculated rabbit sperm from New Zealand White buck was washed once by centrifugation, then preincubated for 2 or 4 hrs in a chemically defined medium (DM), DM plus 20% rabbit serum or BSA-free DM plus 20% rabbit serum at 37$^{\circ}C$ water bath or CO2 incubator. At the end of preincubation LC was added to the preincubated sperm, which was stained at 0.5 to 4 hr later and examined for AR and sperm motility. For in vitro fertilization, gametes were coincubated in DM up to 24 hrs and thereafter fertilized embryos were incubated in BSM -II up to 48 hrs. Addition of LC to 4-hr preincubated sperm was more effective for the AR and sperm motility than that to 2-hr preincubated sperm and optimal concentration of LC for AR was about 80${\mu}$g/ml. A significant increase in AR occured from 20 to 30 min. after addition of 80 to 100${\mu}$g/ml in 4-hr preincubated sperm. BSA-free DM plus 20% rabbit serum showed a higher AR and sperm motility than those of DM plus 20% rabbit serum in LC-added sperm after 4-hr preincubation. The incidence of AR after 4-hr preincubation and at 30 min after 60${\mu}$g/ml LC addition varied greatly among individual bucks. Sixty ${\mu}$g/ml LC-added sperm showed a slight high cleavage rate over control levels, but 100${\mu}$g/ml LC-added sperm showed lower cleavage rate rather than 60${\mu}$g/ml LC. It is concluded that optimal concentration of LC for high AR induction and sperm motility in 4-hr preincubated sperm was about 80${\mu}$g/ml, but 60${\mu}$g/ml level was more useful for in vitro fertilization.

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아르곤 가스의 주입이 붕소 도핑 다이아몬드 전극의 특성에 미치는 효과 (Effect of Argon Addition on Properties of the Boron-Doped Diamond Electrode)

  • 최용선;이영기;김정열;이유기
    • 한국재료학회지
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    • 제28권5호
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    • pp.301-307
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    • 2018
  • A boron-doped diamond(BDD) electrode is attractive for many electrochemical applications due to its distinctive properties: an extremely wide potential window in aqueous and non-aqueous electrolytes, a very low and stable background current and a high resistance to surface fouling. An Ar gas mixture of $H_2$, $CH_4$ and trimethylboron (TMB, 0.1 % $C_3H_9B$ in $H_2$) is used in a hot filament chemical vapor deposition(HFCVD) reactor. The effect of argon addition on quality, structure and electrochemical property is investigated by scanning electron microscope(SEM), X-ray diffraction(XRD) and cyclic voltammetry(CV). In this study, BDD electrodes are manufactured using different $Ar/CH_4$ ratios ($Ar/CH_4$ = 0, 1, 2 and 4). The results of this study show that the diamond grain size decreases with increasing $Ar/CH_4$ ratios. On the other hand, the samples with an $Ar/CH_4$ ratio above 5 fail to produce a BDD electrode. In addition, the BDD electrodes manufactured by introducing different $Ar/CH_4$ ratios result in the most inclined to (111) preferential growth when the $Ar/CH_4$ ratio is 2. It is also noted that the electrochemical properties of the BDD electrode improve with the process of adding argon.

신규 고온성 Geobacillus sp. AR1의 extracellular 지질분해효소 생산을 위한 배양조건 (Culture Conditions for Improving Extracellular Lipolytic Enzyme Production by a Novel Thermophilic Geobacillus sp. AR1)

  • 박수진;전숭종
    • 생명과학회지
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    • 제23권1호
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    • pp.110-115
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    • 2013
  • Extracellular 지질분해효소를 생산하는 균주 AR1은 일본 벳부 온천수에서 분리하였다. 분리된 균주의 16s rRNA 염기서열을 분석하고 계통학적으로 분류한 결과, AR1 균주는 신규 Geobacillus sp.에 속하는 것으로 동정되었다. 본 연구는 Geobacillus sp. AR1 균주의 extracellular 지질분해효소 생산을 향상시키기 위한 새로운 방법에 초점을 맞추었다. AR1 균주는 $35{\sim}75^{\circ}C$의 넓은 온도 범위에서 생육하였고 최적온도는 $65^{\circ}C$이었다. 생육을 위한 최적 pH는 6.5인 반면, 효소 생산을 위한 pH는 8.5로 차이점을 보였다. 배양 중에 지질 화합물의 첨가는 지질분해효소 생산을 유도하였고, soybean oil을 대수증식기에 첨가 했을 때 가장 효율적인 유도 효과를 나타내었다. 한편, 계면활성제는 지질분해효소의 생산을 유도하고 세포 내외의 위치에 영향을 줄 수 있다. AR1 균주는 정지기에 Tween 20을 첨가할 경우, 효소의 세포 외 분비 효율이 크게 증가하였다. 이들 결과를 바탕으로 soybean oil과 Tween 20을 각각 대수증식기와 정지기에 첨가함에 따라 extracellular 효소 생산이 대조구에 비해 2.4배 증가하는 것으로 확인 되었다.

Cl$_2$/Ar 가스 플라즈마에 $O_2$ 첨가에 따른 Pt 식각 특성 연구 (The Study on the Etching Characteristics of Pt Thin Film by $O_2$ Addition to $_2$/Ar Gas Plasma)

  • 김창일;권광호
    • 전자공학회논문지D
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    • 제36D권5호
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    • pp.29-35
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    • 1999
  • Pt박막의 ICP 식각을 위한 Cl\sub 2 \/Ar 가스 플라즈마에 O\sub 2\ 가스를 첨가하여 Pt 식각 메카니즘을 XPS와 QMS로 조사하였다. 또한 single Langmuir probe를 사용하여 이온전류밀도를 Ar/Cl\sub 2 \/O\sub 2\ 가스 플라즈마에서 측정하였다. O\sub 2\가스 첨가비가 증가할수록 Cl과 Ar species가 급격하게 감소하고 이온전류밀도 역시 감소함을 QMS와 single Langmuir probe로 확인하였다. Pt 식각율의 감소는 O\sub 2\가스 첨가비가 증가할수록 반응성 species와 이온전류밀도의 감소에 기인함을 의미한다. 150 nm/min의 치대 식각율과 2.5의 산화막식각 선택비가 50 sccm의 Ar/Cl\sub 2 \/O\sub 2\ 가수 유량, 600 W의 RF 전력, 125 V의 dc 바이어스 전압 및 10mTorr의 반응로 압력에서 얻었다.

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Ar과 $CO_2$ 첨가에 따른 디젤기관의 성능에 관한 연구 (A Study on Diesel Engine Performance with Ar and $CO_2$ Addition)

  • 정영식;이상만;채재우
    • 한국자동차공학회논문집
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    • 제5권4호
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    • pp.93-99
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    • 1997
  • The re quest to develop the engines that are able to run without air or with very little oxygen condition is raised with the interest of ocean science or the mines. This research had already be gun before the world war II, but had been stagnant owing to the appearance of nuclear power. Recycle diesel engines have ability to run under the above mentioned condition the recycle diesel engine recirculates exhaust gases into intake port and consumes additional oxygen supplied by oxygen tank. Carbon dioxide is controlled by the absorber. The combustion and emission characteristics of recycle diesel engines are quite different with conventional one because the working fluids of recycle diesel engines consist of Ar, $CO_2$ and $O_2$ as well as $N_2$. Recycle diesel engine is therefore different with general diesel engine from the viewpoint of intake air composition. It is required to investigate the effect of intake composition in the combustion and emission to know recycle diesel engine. In this study, NOx concentration, smoke and cylinder pressure are measured with the variation of Ar and $CO_2$ Reduces show that the addition of Ar reduces NOx but increases smoke. Otherwise $CO_2$ reduces smoke and NOX simultaneously. Only $CO_2$ increases the ignition delay and both gases increase fuel consumption Ar addition is superior to $CO_2$ addition for the performance of recycle diesel engine system but $CO_2$ has the avantage with respect to emission.

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증착시 및 플라즈마 후처리에 의한 수소 주입이 투명 박막 트랜지스터에서 산화아연 채널층의 물성에 미치는 영향 (Effects of Hydrogen Injection by In-Situ and Plasma Post-Treatment on Properties of a ZnO Channel Layer in Transparent Thin Film Transistors)

  • 방정환;김원;엄현석;박진석
    • 반도체디스플레이기술학회지
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    • 제9권1호
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    • pp.35-40
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    • 2010
  • We have investigated the effects of hydrogen injection via in-situ gas addition ($O_2$, $H_2$, or $O_2$ + $H_2$ gas) and plasma post-treatment (Ar or Ar + H plasma) on material properties of ZnO that is considered to be as a channel layer in transparent thin film transistors. The variations in the electrical resistivity, optical transmittance and bandgap energy, and crystal quality of ZnO thin films were characterized in terms of the methods and conditions used in hydrogen injection. The resistivity was significantly decreased by injection of hydrogen; approximately $10^6\;{\Omega}cm$ for as-grown, $1.2\;{\times}\;10^2\;{\Omega}cm$ for in-situ with $O_2/H_2\;=\;2/3$ addition, and $0.1\;{\Omega}cm$ after Ar + H plasma treatment of 90 min. The average transmittance of ZnO films measured at a wavelength of 400-700 nm was gradually increased by increasing the post-treatment time in Ar + H plasma. The optical bandgap energy of ZnO films was almost monotonically increased by decreasing the $O_2/H_2$ ratio in in-situ gas addition or by increasing the post-treatment time in Ar + H plasma, while the post-treatment using Ar plasma hardly affected the bandgap energy. The role of hydrogen in ZnO was discussed by considering the creation and annihilation of oxygen vacancies as well as the formation of shallow donors by hydrogen.

BCl3/Ar 플라즈마에 Cl2 가스 첨가에 따른 TiN 박막의 식각 특성 (Etch Characteristics of TiN Thin Film with Addition Cl2 Gas in BCl3/Ar Plasma)

  • 엄두승;우종창;김동표;김창일
    • 한국전기전자재료학회논문지
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    • 제21권12호
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    • pp.1051-1056
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    • 2008
  • In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).