• Title/Summary/Keyword: Ar Addition

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Effects of Acanthopanax sessiliflorus on Immune Cells such as Thymocytes, Splenocytes and Macrophages in Mice

  • Kim, Hyung-Woo;Kim, Gye-Yeop;Jeon, Byung-Gwan;Choi, Jeong-Sik;Jeong, Hyun-Woo;Cho, Su-In
    • The Journal of Internal Korean Medicine
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    • v.28 no.2
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    • pp.377-384
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    • 2007
  • Objective : Immune potentiation including activation of T cells, B cells, macrophages, and dendritic cells is known to play a key role in prevention and treatment of patients with cancer. In this study, we investigated the effects of Acanthopanax sessiliflorus (AR) on the immune system, especially on thymocytes, splenocytes, and macrophages. Methods : We investigated the effects of AR on proliferation of splenocytes in normal mice, and the effects on proliferation of splenocytes and thymocytes in tumor-bearing mice. In addition, the effect of AR on NO production using macrophages was investigated. Results : Treatment with AR accelerated proliferation of splenocytes in vitro. AR also accelerated thymocyte proliferation, but did not affect splenocytes proliferation in normal mice. In contrast, AR accelerated proliferation of splenocytes and thymocytes significantly in tumor bearing mice. In addition, NO production level from macrophages was elevated by treatment with AR. Conclusion : These results demonstrate that AR has anti-cancer activities and related mechanisms are involved in immune potentiation such as acceleration of immune cell proliferation and elevation of NO production level in macrophages. In addition, we also demonstrate the possibilities of AR as complementary and alternative medicine to standard anti-cancer drugs.

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The Effect of Diluent Gases on the Growth Behavior of CVD SiC (희석기체가 화학증착 탄화규소의 성장거동에 미치는 영향)

  • 최두진;김한수
    • Journal of the Korean Ceramic Society
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    • v.34 no.2
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    • pp.131-138
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    • 1997
  • Silicon carbide films were chemically vapor deposited onto graphite substrates using MTS(Ch3SiCl3) as a source and Ar or H2 as a diluent gas. The experiments were performed at a fixed condition such as a de-position temperature of 130$0^{\circ}C$, a total pressure of 10 torr, and a flow rate of 100 sccm for each MTS and carrier gas. The purpose of this study is to consider the variation of the growth behavior with the addition of each diluent gas. It is shown that the deposition rate leads to maximum value at 200 sccm addition ir-respective of diluent gases and the deposition rate of Ar addition is faster than that of H2 one. It seems that these characteristics of deposition rate are due to varying interrelationship between boundary layer thick-ness and the concentration of a source with each diluent gas addition, when overall deposition rate is con-trolled by mass transport kinetics. The preferred orientation of (220) plane was maintained for the whole range of Ar addition. However, above 200 sccm addition, especially that of (111) plane was more increased in proportion to H2 addition. Surface morphologies of SiC films were the facet structures under Ar addition, but those were gradually changed from facet to smooth structures with H2 addition. Surface roughness be-came higher in Ar, but it became lower in H2 with increasing the amount of diluent gas.

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Effects of Ar Addition on the Etch Rates and Etch Profiles of Si Substrates During the Bosch Process (Bosch 공정에서 Si 식각속도와 식각프로파일에 대한 Ar 첨가의 영향)

  • Ji, Jung Min;Cho, Sung-Woon;Kim, Chang-Koo
    • Korean Chemical Engineering Research
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    • v.51 no.6
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    • pp.755-759
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    • 2013
  • The etch rate and etch profile of Si was investigated when Ar was added to an $SF_6$ plasma in the etch step of the Bosch process. A Si substrate was etched with the Bosch process using $SF_6$ and $SF_6$/Ar plasmas, respectively, in the etch step to analyze the effects of Ar addition on the etch characteristics of Si. When the Ar flow rate in the $SF_6$ plasma was increased, the etch rate of the Si substrate increased, had a maximum at 20% of the Ar flow rate, and then decreased. This was because the addition of Ar to the $SF_6$ plasma in the etch step of the Bosch process resulted in the bombardment of Ar ions on the Si substrate. This enhanced the chemical reactions (thus etch rates) between F radicals and Si as well as led to sputtering of Si particles. Consequently, the etch rate was higher more than 10% and the etch profile was more anisotropic when the Si substrate was etched with the Bosch process using a $SF_6$/Ar (20% of Ar flow rate) plasma during the etch step. This work revealed a feasibility to improve the etch rate and anisotropic etch profile of Si performed with the Bosch process.

Studies on In Vitro Capacitation by Lysolecithin and In Vitro Fertilizing Ability of Ejaculated Rabbit Sperm

  • Kim, C.K.;Im, K.S.;Zheng, X.;Foote, R.H.
    • Korean Journal of Animal Reproduction
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    • v.10 no.1
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    • pp.109-120
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    • 1986
  • This study was conducted to define the effect of addition of lysolecithin (LC) and 20% v/v rabbit serum to sperm preincubation medium on the induction of acrosome reaction (AR) an fertilizing ability in vitro of LG-added sperm. Ejaculated rabbit sperm from New Zealand White buck was washed once by centrifugation, then preincubated for 2 or 4 hrs in a chemically defined medium (DM), DM plus 20% rabbit serum or BSA-free DM plus 20% rabbit serum at 37$^{\circ}C$ water bath or CO2 incubator. At the end of preincubation LC was added to the preincubated sperm, which was stained at 0.5 to 4 hr later and examined for AR and sperm motility. For in vitro fertilization, gametes were coincubated in DM up to 24 hrs and thereafter fertilized embryos were incubated in BSM -II up to 48 hrs. Addition of LC to 4-hr preincubated sperm was more effective for the AR and sperm motility than that to 2-hr preincubated sperm and optimal concentration of LC for AR was about 80${\mu}$g/ml. A significant increase in AR occured from 20 to 30 min. after addition of 80 to 100${\mu}$g/ml in 4-hr preincubated sperm. BSA-free DM plus 20% rabbit serum showed a higher AR and sperm motility than those of DM plus 20% rabbit serum in LC-added sperm after 4-hr preincubation. The incidence of AR after 4-hr preincubation and at 30 min after 60${\mu}$g/ml LC addition varied greatly among individual bucks. Sixty ${\mu}$g/ml LC-added sperm showed a slight high cleavage rate over control levels, but 100${\mu}$g/ml LC-added sperm showed lower cleavage rate rather than 60${\mu}$g/ml LC. It is concluded that optimal concentration of LC for high AR induction and sperm motility in 4-hr preincubated sperm was about 80${\mu}$g/ml, but 60${\mu}$g/ml level was more useful for in vitro fertilization.

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Effect of Argon Addition on Properties of the Boron-Doped Diamond Electrode (아르곤 가스의 주입이 붕소 도핑 다이아몬드 전극의 특성에 미치는 효과)

  • Choi, Yong-Sun;Lee, Young-Ki;Kim, Jung-Yuel;Lee, You-Kee
    • Korean Journal of Materials Research
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    • v.28 no.5
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    • pp.301-307
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    • 2018
  • A boron-doped diamond(BDD) electrode is attractive for many electrochemical applications due to its distinctive properties: an extremely wide potential window in aqueous and non-aqueous electrolytes, a very low and stable background current and a high resistance to surface fouling. An Ar gas mixture of $H_2$, $CH_4$ and trimethylboron (TMB, 0.1 % $C_3H_9B$ in $H_2$) is used in a hot filament chemical vapor deposition(HFCVD) reactor. The effect of argon addition on quality, structure and electrochemical property is investigated by scanning electron microscope(SEM), X-ray diffraction(XRD) and cyclic voltammetry(CV). In this study, BDD electrodes are manufactured using different $Ar/CH_4$ ratios ($Ar/CH_4$ = 0, 1, 2 and 4). The results of this study show that the diamond grain size decreases with increasing $Ar/CH_4$ ratios. On the other hand, the samples with an $Ar/CH_4$ ratio above 5 fail to produce a BDD electrode. In addition, the BDD electrodes manufactured by introducing different $Ar/CH_4$ ratios result in the most inclined to (111) preferential growth when the $Ar/CH_4$ ratio is 2. It is also noted that the electrochemical properties of the BDD electrode improve with the process of adding argon.

Culture Conditions for Improving Extracellular Lipolytic Enzyme Production by a Novel Thermophilic Geobacillus sp. AR1 (신규 고온성 Geobacillus sp. AR1의 extracellular 지질분해효소 생산을 위한 배양조건)

  • Park, Su-Jin;Jeon, Sung-Jong
    • Journal of Life Science
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    • v.23 no.1
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    • pp.110-115
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    • 2013
  • A microorganism (strain AR1) producing an extracellular lipolytic enzyme was isolated from hot springs located in Beppu, Japan. Phylogenetic analysis based on the 16S rDNA sequence and biochemical studies indicated that AR1 belongs to the genus Geobacillus. This study focused on novel strategies to increase extracellular lipolytic enzyme production by this novel Geobacillus sp. AR1. Cultures of the AR1 strain grew within a wide temperature range (from 35 to $75^{\circ}C$); the optimum temperature was $65^{\circ}C$. The pH for optimal growth was 6.5, whereas the optimum pH for lipolytic enzyme production was 8.5. The presence of oils in the culture medium led to improvements in lipolytic enzyme activity. Soybean oil was the most efficient inducer, and it yielded better results when added in the exponential phase. On the other hand, the addition of chemical surfactants led to lipolytic enzyme production. Their addition to the culture could affect the location of the enzyme activity. The addition of Tween 20 in the stationary phase significantly increased the proportion of the extracellular enzyme activity. According to the results, following the addition of soybean oil and Tween 20 in the exponential and stationary phases, the extracellular lipolytic activity was increased 2.4-fold compared with that of a control.

The Study on the Etching Characteristics of Pt Thin Film by $O_2$ Addition to $_2$/Ar Gas Plasma (Cl$_2$/Ar 가스 플라즈마에 $O_2$ 첨가에 따른 Pt 식각 특성 연구)

  • 김창일;권광호
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.5
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    • pp.29-35
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    • 1999
  • Inductively coupled plsama etching of platinum thin film was studied using $O_2$ addition to $Cl_2$/Ar gas plasma. In this study, Pt etching mechanism was investigated with Ar/$Cl_2$ /$O_2$ gas plasma by using XPS and QMS. Ion current density was measured with Ar/$Cl_2$ /$O_2$ gas plasma by using single Langmuir probe. It was confirmed by using QMS and single Langmuir probe that Cl and Ar species rapidly decreased and ion current density was also decreased with increasing $O_2$ gas ratios. These results implied that the decrease of Pt etch rate is due to the decrease of reactive species ans ion current density with increasing $O_2$ gas mixing ratios. A maximum etch rate of 150nm/min and the oxide selectivity of 2.5 were obtained at Ar/$Cl_2$ /$O_2$ flow rate of 50 seem, RF power of 600 W, dc bias voltage of 125 V, and the total pressure of 10 mTorr.

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A Study on Diesel Engine Performance with Ar and $CO_2$ Addition (Ar과 $CO_2$ 첨가에 따른 디젤기관의 성능에 관한 연구)

  • 정영식;이상만;채재우
    • Transactions of the Korean Society of Automotive Engineers
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    • v.5 no.4
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    • pp.93-99
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    • 1997
  • The re quest to develop the engines that are able to run without air or with very little oxygen condition is raised with the interest of ocean science or the mines. This research had already be gun before the world war II, but had been stagnant owing to the appearance of nuclear power. Recycle diesel engines have ability to run under the above mentioned condition the recycle diesel engine recirculates exhaust gases into intake port and consumes additional oxygen supplied by oxygen tank. Carbon dioxide is controlled by the absorber. The combustion and emission characteristics of recycle diesel engines are quite different with conventional one because the working fluids of recycle diesel engines consist of Ar, $CO_2$ and $O_2$ as well as $N_2$. Recycle diesel engine is therefore different with general diesel engine from the viewpoint of intake air composition. It is required to investigate the effect of intake composition in the combustion and emission to know recycle diesel engine. In this study, NOx concentration, smoke and cylinder pressure are measured with the variation of Ar and $CO_2$ Reduces show that the addition of Ar reduces NOx but increases smoke. Otherwise $CO_2$ reduces smoke and NOX simultaneously. Only $CO_2$ increases the ignition delay and both gases increase fuel consumption Ar addition is superior to $CO_2$ addition for the performance of recycle diesel engine system but $CO_2$ has the avantage with respect to emission.

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Effects of Hydrogen Injection by In-Situ and Plasma Post-Treatment on Properties of a ZnO Channel Layer in Transparent Thin Film Transistors (증착시 및 플라즈마 후처리에 의한 수소 주입이 투명 박막 트랜지스터에서 산화아연 채널층의 물성에 미치는 영향)

  • Bang, Jung-Hwan;Kim, Won;Uhm, Hyun-Seok;Park, Jin-Seok
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.1
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    • pp.35-40
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    • 2010
  • We have investigated the effects of hydrogen injection via in-situ gas addition ($O_2$, $H_2$, or $O_2$ + $H_2$ gas) and plasma post-treatment (Ar or Ar + H plasma) on material properties of ZnO that is considered to be as a channel layer in transparent thin film transistors. The variations in the electrical resistivity, optical transmittance and bandgap energy, and crystal quality of ZnO thin films were characterized in terms of the methods and conditions used in hydrogen injection. The resistivity was significantly decreased by injection of hydrogen; approximately $10^6\;{\Omega}cm$ for as-grown, $1.2\;{\times}\;10^2\;{\Omega}cm$ for in-situ with $O_2/H_2\;=\;2/3$ addition, and $0.1\;{\Omega}cm$ after Ar + H plasma treatment of 90 min. The average transmittance of ZnO films measured at a wavelength of 400-700 nm was gradually increased by increasing the post-treatment time in Ar + H plasma. The optical bandgap energy of ZnO films was almost monotonically increased by decreasing the $O_2/H_2$ ratio in in-situ gas addition or by increasing the post-treatment time in Ar + H plasma, while the post-treatment using Ar plasma hardly affected the bandgap energy. The role of hydrogen in ZnO was discussed by considering the creation and annihilation of oxygen vacancies as well as the formation of shallow donors by hydrogen.

Etch Characteristics of TiN Thin Film with Addition Cl2 Gas in BCl3/Ar Plasma (BCl3/Ar 플라즈마에 Cl2 가스 첨가에 따른 TiN 박막의 식각 특성)

  • Um, Doo-Seung;Woo, Jong-Chang;Kim, Dong-Pyo;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.12
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    • pp.1051-1056
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    • 2008
  • In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).