• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.138-141
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• 2002

The channel of the superconducting Flux Flow Transistor has been fabricated with plasma etching method using ICP. The ICP conditions were 700 W of ICP power, 150 W of rf chuck power, 5 mTorr of the pressure in chamber and 1:1 of Ar : $Cl_2$, respectively. The channel etched by plasma gas showed superconducting characteristics of over 77 K and superior surface morphology. The critical current of SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained $r_m$ values were smaller than $0.1\Omega$ at a bias current of 40 mA. The current gain was about 0.5. Output resistance was below $0.2\Omega$.

• Elastomers and Composites
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• v.55 no.4
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• pp.321-328
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• 2020

Zinc nitrate hexahydrate (Zn(NO3)2·6H2O) and sodium hydroxide (NaOH) were dissolved in distilled water and stirred for 30 min. The resulting solution was sonicated by an ultrasonic wave for 45 min. This solution was washed with distilled water and ethanol after centrifugation; next, it was placed in an electric furnace at 200℃ for 1 h under the flow of Ar gas to obtain zinc oxide nanoparticle. A zinc oxide nanoparticle-(C60) fullerene nanowhisker composite was synthesized using the zinc oxide nanoparticle solution, C60-saturated toluene, and isopropyl alcohol via the liquid-liquid interfacial precipitation method. The zinc oxide nanoparticle and zinc oxide nanoparticle-(C60) fullerene nanowhisker composite were characterized using X-ray diffraction, scanning electron microscopy, and Raman spectroscopy, and they were used for the catalytic degradation of methyl orange (MO) under ultraviolet (at 254 and 365 nm) and ultrasonic irradiation. In addition, the catalytic degradation of MO over the zinc oxide nanoparticle and zinc oxide nanoparticle-(C60) fullerene nanowhisker composite was evaluated using ultraviolet-visible spectroscopy.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.73-73
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• 2001

Boron-containing materials have several excellent properties, such as superlnardness, insulation and non-Rinear optical property. Recently, oxynitride compounds, such as Si(ON), Ti(ON), became the promising materials applied in diffusion barrier layer and solar cell. With the expectation of obtaining the hybrid property, we have firstly grown the BON thin film by radio frequency (R.F.) plasma enhanced metalorganic chemical vapm deposition (PEMOCVD) with 100 kHz frequency and trimethyl borate precursor. The plasma source gases used in this study were Ar and $H_2$, and two kinds of nhmgen source gases, $N_2$ and <$NH_3$, were also employed. The as-grown films were characterized by XPS, IR, SEM and Knoop microlhardness tester. The relationship between the films hardness and the growth rate indicated that the hardness of the film was dependent on several factors such as nitrogen source gas, substrate temperature and film thickness due to the variation of the composition and the structure of the film. Both nitrogen and carbon content could raise the film hardness, on which nitrogen content did stronger effect than carbon. The smooth morphology and continuous structure was benefit of obtaining high hardness. The maximum hardness of BON film was about 10 GPa.

• Journal of Ceramic Processing Research
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• v.21
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• pp.47-52
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• 2020

Graphene was synthesized using rapid thermal chemical vapor deposition (RT-CVD) equipment designed to produce largearea graphene at high speed. The effects of methane (CH₄), argon (Ar), and hydrogen (H₂) gases were investigated between 800 ℃ and 1,000 ℃ during heating and cooling in the graphene synthesis process. The findings reveal that multilayer domains increased due to hydrogen pretreatment with increase in temperature. Furthermore, when pretreated with the same gas, it was confirmed that the post-argon-treated sample cooled from 1,000 ℃ to 800 ℃ had a higher I_D/I_G value than that of the other samples. This result was consistent with the sheet resistance properties of graphene. The sample prepared in methane atmosphere maintained during both the pre-treatment and post-treatment demonstrated the lowest sheet resistance of 787.49 Ω/sq. Maintaining the methane gas atmosphere in the high-temperature region during graphene synthesis by RT-CVD reduced the defects and improved the electrical property.

• Clean Technology
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• v.17 no.1
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• pp.69-77
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• 2011

The intrinsic $CO_2$ separation and hydrogen production system is a novel concept using oxidation and reduction reactions of oxygen carrier for both $CO_2$ capture and high purity hydrogen production. The process consists of a fuel reactor (FR), a steam reactor (SR) and an air reactor (AR). The natural gas ($CH_4$) is oxidized to $CO_2$ and steam by the oxygen carrier in FR, whereas the steam is reduced to hydrogen by oxidation of the reduced oxygen carrier in SR. The oxygen carrier is fully oxidized by air in AR. In the present study, the chemical looping moving bed reactor having 200 L/h hydrogen production capacity is designed and the hydrodynamic properties were determined. Compared with other reactors, two moving bed reactors (FR, SR) were used to obtain high conversion and selectivity of the oxygen carrier. The desirable solid circulation rates are calculated to be in the range of $20{\sim}100kg/m^2s$ from the conceptual design. The solid circulation rate can be controlled by aeration in a loop-seal. To maintain the gas velocity in the moving beds (FR, SR) at the minimum fluidization velocity is found to be suitable for the stable operation. The solid holdup in moving beds decrease with increasing gas velocity and solid circulation rate.

• Journal of Surface Science and Engineering
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• v.34 no.5
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

• Journal of Magnetics
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• v.3 no.4
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• pp.99-104
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• 1998

The $ Sm_2Fe_{17}N_x $materials were prepared by the combination consisting of the HDDR (hydrogenation, disproportionation, desorption, and recombination) process and nitrogenation or by the conventional way consisting of nitrogenation only, and the magnetic and thermomagnetic properties of the materials were investigated. The magnetic characterisation of the prepared $ Sm_2Fe_{17}N_x $ materials was performed using a VSM. Thermal stability of the materials was evaluated using a DTA under Ar gas atmosphere. The thermomagnetic characteristics of the materials were examined using a Sucksmith-type balance. The previously HDDR-treated Sm2Fe17parent alloy was found to be nitrogenated more easily compared to the ordinary $ Sm_2Fe_{17}N_x $alloy. The $ Sm_2Fe_{17}N_x $ material produced by the combination method showed a high coercivity (12.9 kOe) even in the state of coarse particle size (around 60 ${\mu}{\textrm}{m}$). It was also revealed that the $ Sm_2Fe_{17}N_x $ material produced by the material produced by the combination showed an unusual TMA tracing featured with a low and constant magnetisation at lower temperature range and a peak just before the Curie temperature. This thermomagnetic characteristic was interpreted in terms of the competition between two counteracting effects; the decrease in magnetisation due to the thermal agitation at an elevated temperature and the increase in magnetisation resulting from the rotation of magnetisation of the fine grains comparable to a critical single domain size due to the decreased magnetocrystalline anisotropy at an elevated temperature.

• Progress in Superconductivity
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• v.9 no.1
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• pp.91-95
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• 2007

[ $YBa_2Cu_3O_{7-{\delta}}$ ] films have been prepared on $LaAlO_3$ (100) single-crystal substrates by the metal organic deposition using dichloroacetate precursors (DCA-MOD). DCA precursor solutions with different composition such as; Yttrium-excess(15 at%), barium-poor(25 at%), and a stoichiometric(Y:Ba:Cu=1:2:3) were prepared in order to investigate the effects of precursor composition on the properties of YBCO films prepared by DCA-MOD method. Coated films were calcined at low temperature up to $500^{\circ}C$ in flowing humid oxygen atmosphere. Conversion heat treatment was performed $800^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. For the film prepared using excess yttrium composition, high critical current density ($J_c$) of $>2MA/cm^2$ was obtained whereas, for the films prepared using barium-poor composition, $J_c$ was lower than $1MA/cm^2$.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.2
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• pp.47-51
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• 2001

To obtain high remnant polarization and good crystalinity of ferroelectric thin films in non-volatile memory devices, the high temperature treatment in oxygen ambient is inevitable. Severe problems that occur in this process are oxygen diffusion into substrate, oxidation of electrode and buffer layer, degradation of microstructure and so on. We made ruthenium dioxide thin film by reactive sputtering with oxygen and argon mixture atmosphere. Comparing quantitatively the core-level spectra of Ru and RuO$_2$ obtained by x-ray photoelectron spectroscopy(XPS), we found that chemical state of RuO$_2$ is very stable and of good resistance to oxygen diffusion and oxidation of adjacent layers. It opens the use of RuO$_2$ thin film as a multifunctional layer of good conducting electrode and resistive barrier for the diffusion and the oxidation. We also suggest a correct understanding of Ru 3d core-level spectrum for RuO$_2$ based on the scheme of final state screening and charge transfer satellites.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.97-100
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• 2015

The kesterite $Cu_2ZnSnSe_4$ (CZTSe) thin film solar cells were synthesized by selenization of sputtered Cu/Sn/Zn metallic precursors on Mo coated soda lime glass substrate in Ar atmosphere. Cu/Sn/Zn metallic precursors were deposited by DC magnetron sputtering process with 30 W power at room temperature. As-deposited metallic precursors were placed in a graphite box with Se pellets and selenized using rapid thermal processing furnace at various temperature ($480^{\circ}C{\sim}560^{\circ}C$) without using a toxic $H_2Se$ gas. Effects of Selenization temperature on the morphological, crystallinity, electrical properties and cell efficiency were investigated by field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD), J-V measurement system and solar simulator. Further details about effects of selenization temperature on CZTSe thin films will be discussed.