• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.276-278
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• 1997

The reliable etching process is one of the essential steps in fabricating GaN based-device. High etch rate is needed to obtain a deeply etched structure and perfect anisotropic etched facet is needed to obtain lasing profile. In the research, therefore, we had proposed a planar inductively coupled plasma etcher (Planar ICP Etcher) as a high density plasma source, and studied the etching mechanism using the $CH_4/H_2$/Ar gas mixture. Dry etching characteristics such as etch rate, anisotropic etching profile and so on, for the III-V nitride layers were investigated using Planar ICP Etcher, based on the plasma characteristic as a variation of plasma process parameters.

• Journal of Surface Science and Engineering
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• v.50 no.4
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• pp.272-276
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• 2017

The response of AISI 310 type austenitic stainless steel to the novel low temperature plasma carburizing process has been investigated in this work. This grade of stainless steel shows better corrosion resistance and high temperature oxidation resistance due to its high chromium and nickel content. In this experiment, plasma carburizing was performed on AISI 310 stainless steel in a D.C. pulsed plasma ion nitriding system at different temperatures in $H_2-Ar-CH_4$ gas mixtures. The working pressure was 4 Torr (533Pa approx.) and the applied voltage was 600 V during the plasma carburizing treatment. The hardness of the samples was measured by using a Vickers micro hardness tester with the load of 100 g. The phase of carburized layer formed on the surface was confirmed by X-ray diffraction. The resultant carburized layer was found to be precipitation free and resulted in significantly improved hardness and corrosion resistance.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1025-1032
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• 2000

산화분위기에서의 반응성 이온빔 스퍼터링법으로 Sn과 Sb 금속 타겟을 사용하여 실온에서 ATO 박막을 증착하였다. Sb 첨가량, 박막의 두께 및 열처리가 ATO 박막의 전기적 특성과 광학적 특성에 미치는 효과를 연구하고자 하였다. 제조된 ATO 박막의 두께는 약 1500$\AA$과 1000$\AA$으로 조절하였으며, Sb 농도는 10.8wt% 또는 14.9wt%임이 XPS 분석에 의하여 확인되었다. 증착한 박막의 열처리는 40$0^{\circ}C$~$600^{\circ}C$의 온도범위에서 산소 또는 forming gas(10% H$_2$-90% Ar) 분위기에서 30분간 수행하였다. 이렇게 제조된 ATO 박막은 Sb의 첨가량, 두께 및 열처리 조건에 따라 다양한 전기 비저항 값과 가시광선 대역에서의 광투과도를 나타내었다.

• Bulletin of the Korean Chemical Society
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• v.6 no.1
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• pp.29-32
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• 1985

Normal modes of crystalline orthorhombic sulfur belonging to the space group $D_{2h}$-Fddd, have been evaluated by taking the lowest temperature phase in the solid. Normal modes are obtained by the valence force field with modified force constants and a quantitative description of the mode is adjusted by the potential energy distribution. Since the full crystal system of orthorhombic sulfur is so large, we intended to calculate the normal modes simply by constructing the imaginary box made by the infinite mass boundary. And the Raman experiment is done by using the more powerful Ar-Kr gas laser with lowering the temperature to ${\sim}10^{\circ}K$.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.243-248
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• 1997

The effect of $O_2$ partial pressure on microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, are investigated. Saturation magnetization ($4{\pi}M_s$) of Fe-Hf-O film were decreased with increasing $O_2$ partial pressure, the best soft magnetic properties exhibit at $O_2$ partial pressure of 10%. With further increase of $O_2$ partial pressure, soft magnetic properties decreased continuously. The $Fe_{82}Hf_{3.4}O_{14.6}$ film with $P_{O2}=10%$ exhibits good soft magnetic properties with $4{\pi}M_s=17.7kG$, $H_c=0.7Oe$ and ${\mu}_ {eff}$ (1~100 MHz)=2,500, respectively. The addition of O is effective in grain refinement. In case of $P_{O2}=15%$, it is observed that $Fe_3O_4$ compound is formed and high frequency soft magnetic properties are decrease. The electrical resistvity($\rho$) of Fe-Hf-O film is increased with increasing $O_2$ partial pressure. Electrical resistivity of $Fe_{82}Hf_{3.4}O_{14.6}$ film was 5 times higher than that of the film without oxygen. Thus, it is considered that the good magnetic properties of $Fe_{82}Hf_{3.4}O_{14.6}$ film results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.322-330
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• 2008

The properties of discharge, luminance, and spectroscopy are investigated in a longitudinal and transverse discharge fluorescent lamps with tube of outer diameter 4 mm. The sample lamps are prepared to be three kinds of gas composition such as mercury lamps of Ne(95%)+Ar(5%)+Hg(2 mg), the mercury-free lamps of Xe 100% and Ne+Xe(4%). The gas pressure is in the range of $5{\sim}300\;Torr$. In the mercury lamps, the longitudinal discharge having a positive column is high in luminance and efficiency, while the transverse discharge is no luminance at all. In the Xe-lamps, the transverse discharge shows relatively good in efficiency as compared with the longitudinal discharge which has a high discharge voltage and a low luminance and efficiency. In the transverse discharge of relatively high efficiency, a pure Xe(100%) gas discharge has a higher efficiency than the mixture gas of Ne+Xe(4%). Through these experiments, the properties of mercury and xenon lamps are verified. In the mercury lamps, the longitudinal discharge of tubular fluorescent lamps is high in luminance and efficiency, while the transverse discharge of flat panel fluorescent lamps are low in luminance efficiency. In the mercury-free lamps, the flat fluorescent lamps of transverse discharge having a high pressure ${\sim}100\;Torr$ with the pure Xe-gas are verified to be suggestable.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.87-92
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• 1996

The PLT thin films on (100) cleaved MgO single crystal substrate have been fabricated by rf magnetron sputtering using a PbO-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of $Ar/O_{2}$, and rf power density were $640^{\circ}C$, 10 mTorr, 10 seem, and $1.7\;W/cm^{2}$, respectively. In these conditions, the PLT thin film showed the Pb/Ti ratio of 1/2 at the surface, the resistivity of $8{\times}10^{11}{\Omega}{\cdot}cm$, and dielectric constant of 110. The pyroelectric infrared sensors with these PLT thin films showed the peak to peak voltage of 450 m V and signal to noise ratio of 7.2.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.33-37
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• 2013

In this study, we have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $H_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.9sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $H_2$ flow rate. The electrical resistivity of IZO film decreased with increasing flow rate of $H_2$ under Ar+$H_2$. The change of electrical resistivity with increasing flow rate of $H_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The increase of electrical resistivity with increasing substrate temperature was interpreted in terms of the decrease of the charge carrier mobility and the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.

• Journal of Powder Materials
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• v.10 no.1
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• pp.46-50
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• 2003

Lee et al. reported that a mixture of Cu and Ta, the combination of which is characterized by a positive heat of mixing, $\{Delta}H_{mix}$ of +2 kJ/㏖, can be amorphized by mechanical alloying(MA). It is our aim to investigate to what extent the MA is capable of producing a non-equilibrium phase with increasing the heat of mixing. The system chosen is the binary $Cu_{30}Mo_{70}$ with $\{Delta}H_{mix}$=+19 kJ/㏖. The mechanical alloying was carried out using a Fritsch P-5 planetary mill under Ar gas atmosphere. The vial and balls are made of Cu containing 1.8-2.0 wt.%Be to avoid contaminations arising mainly from Fe when steel balls and vial are used. The MA powders were characterized by the X-ray diffraction, EXAFS and thermal analysis. We conclude that two phase mixture of nanocrystalline fcc-Cu and bcc-Mo with grain size of 10 nm is formed by the ball-milling for a 3:7 mixture of pure Cu and Mo, the evidence for which has been deduced from the thermodynamic and structural analysis based on the DSC, X-ray diffraction and EXAFS spectra.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.735-739
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• 2002

$(Y,Gd)BO_3$: Eu, $Zn_2$$SiO_4$ : Mn and $BaMgAl_{10}$ $O_{17}$ : Eu phosphors used in PDP were continuously irradiated by vacuum ultra violet generated from the penning gas (96%Ar+4%Xe) discharge and then the change of emitting intensity with time was investigated. The brightness of these phosphors decreased exponentially with VUV excitation time. The experimental data showed that the degradation rate increased in the order of $Zn_2$$SiO_4$ : Mn>(Y,Gd)$BO_3$: Eu>$BaMgAl_{10}$ $O_{17}$ : Eu phosphor. This different degradation property of phosphors was interpreted in terms of brightness saturation and stability against VUV irradiation. It was found that the degradation property of $(Y,Gd)BO_3$ : Eu red phosphor synthesized by ultrasonic thermal spray was superior to commercial phosphor.