• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.361-362
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• 2005

Antimony doped tin oxide(ATO) nano powders have been synthesized by homogeneous precipitation method using $SnCl_4\cdot5H_2O$ for precursor, $SbCl_3$ as doped material and urea. The hydrolysis of urea and conductive mechanism and Heat treatment was performed at the temperature from $500^{\circ}C$ to $700^{\circ}C$ in air. The ATO nano powders are characterized by means of Thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffraction (XRD), Brunauer, Emmett, and Teller adsorption (BET), Scanning electron microscopy (SEM) ATO nano powders with an average size of nm and the highest surface area 129 $m^2g^{-1}$ are obtained.

• Transactions on Electrical and Electronic Materials
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• v.13 no.5
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• pp.241-244
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• 2012

Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol% and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at $550^{\circ}C$ in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about $8{\sim}10{\times}10^{-3}{\Omega}{\cdot}cm$, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions.

• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.627-636
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• 2022

In nuclear power plants and other nuclear facilities the removal of cobalt from radioactive liquid waste is needed to reduce the radioactivity concentration in effluents. In liquid wastes containing strong organic complexing agents such as EDTA cobalt removal can be problematic due to the high stability of the Co-EDTA complex. In this study, the removal of cobalt from NaNO₃ solutions using antimony oxide (Sb₂O₃) synthesized from potassium hexahydroxoantimonate was investigated in the absence and presence of EDTA. The uptake studies on the ion exchange material were conducted both in the dark (absence of UV-light) and under UV-C irradiation. Ca²⁺ or Ni²⁺ were included in the experiments as competing cations to test the selectivity of the ion exchanger. Results show that UV-C irradiation noticeably enhances the cobalt sorption efficiency on the antimony oxide. It was shown that nickel decreased the sorption of cobalt to a higher extent than calcium. Finally, the sorption data collected for Co²⁺ on antimony oxide was modeled using six different isotherm models. The Sips model was found to be the most suitable model to describe the sorption process. The Dubinin-Radushkevich model was further used to calculate the adsorption energy, which was found to be 6.2 kJ mol^-1.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.175-175
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• 2010

Transparent conducting oxide (TCO) films are widely used as transparent conducting thin film material for application in various fields such as solar cells, optoelectronic devices, heat mirrors and gas sensors, etc. Recently the increased utilization of many transparent electrodes has accelerated the development of inexpensive TCO materials. Indium tin oxide (ITO) film is well-known for TCO materials because of its low resistivity, but there is disadvantage that it is too expensive. ZnO film is cheaper than ITO but it shows thermally poor stability. On the contrary, antimony-doped tin oxide films (ATO) are more stable than TCO films such as Al-doped zinc oxide (AZO) and ITO. Moreover, SnO2 film shows the best thermal and chemical stability, low cost and mechanical durability except the poor conductivity. However, annealing is proved to improve the conductivity of ATO film. Therefore, in this work, antimony (6 wt%) doped tin oxide films to improve the conductivity were deposited on 7059 corning glass by RF magnetron sputtering method for the application to transparent electrodes. In general, of all TCO films, glass is the most commonly selected substrate. However, for future development in flexible devices, glass is limited by its intrinsic inflexibility. In this study, we report the growth and properties of antimony doped tin oxide (ATO) films deposited on PES flexible substrate by using RF magnetron sputtering. The optimization process was performed varying the sputtering parameters, such as RF power and working pressure, and parameter effect on the structural, electrical and optical properties of the ATO films were investigated.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.5-9
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• 2015

Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.162-162
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• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.3
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• pp.16-21
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• 1976

Transparent eloctroaes of polycrystalline till-oxide films doped with antimony are prepared on the substrate of microscopic cover g1ass by modified spray method and from SnCl4 Solution. Their electrical and optical properties are investigated in relation to the surface temperature of the substrate glass and to antimony concentration in the starting materials. The sheet.resiststrace of the film electrodes and transmittance for incandescent light depen on tile antimony concentration and surface temperature of substrates at the time of making films. The transmittance increases with decrease of sheet resistance of the film. The optimum sheet.resistance was obtianed in the case of the antimony concentration 0.6(%) approximately , and the max. transmittance was 93(%).

• Journal of the Korean Chemical Society
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• v.4 no.1
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• pp.18-26
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• 1957

There are two problems to be solved by our efforts in the enamel frit. One is how we can cover the enamel frit thin with complete milk white as possible, and the other is how it can be, made resistant for chemicals than before one. The frit which can solved the two problems just mentioned above is titanium enamel frit. This frit has been developed in America after War Ⅱ, and now the research for concerning antimony frit into titanium frit is under development entirely. In order to develope the enamel industry in Korea, it is urgent problem to convert antimony frit into titanium frit. By the way the titanium frit is emulsified titanium oxide crystal which made through reheating the supersaturated solution of titanium oxide in the basis of glass. Unfortunately, there are many obscure points in active fact or which influence on its composition and characteristics yet. However, this task was tried for the first in Korea. As first step, the test was carried on the reference books, and we can be possible convert antimony frit into titanium frit as a result of this experiment. As a conclusion, for the purpose of developing the enamel industry in Korea, we studied that the research for converting antimony enamel frit which has been used popularly into titanium enamel frit which is more economic and resistant for chemicals. As a result of experiments, the following points concerning with titanium frit have become clearly. 1. It is better when the composition of titanium enamel frit has as following table.Man Duck San Silica 24 An Yang Feldspar 20 Borax 28 Sodium Nitrate 4 Cryolite 7 Calcium Carbonate 3.6∼1 Titanium Oxide 10 Calcium phosphate 0 ∼3.2 Calcium Fluoride 0∼1.8 Antimony Oxide 0∼0.5 2. The amount of $TiO_2$, to be added is $10%\;to\;12{%,\;CaF_2\;is\;under\;1.8%,\;P_2O_5\;is\;under\;1.6%,\;Sb_2O_3\;is\;under\;0.5%$. 3. In the titanium frit, the limit of iron oxide amount to be included is under 0. 5%. 4. Comparing the titanium enamel frit with antimony enamel frit not only the titanium frit can be savely 20.6% in the price of raw materials, but one time of glazing and heating process is omitted in each case, and it is known the titanium frit is more resistant for chemicals than antimony frit.

• Korean Journal of Materials Research
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• v.32 no.12
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• pp.545-552
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• 2022

Tin-antimony sulfide nanocomposites were prepared via hydrothermal synthesis and a N₂ reduction process for use as a negative electrode in a sodium ion battery. The electrochemical energy storage performance of the battery was analyzed according to the tin-antimony composition. The optimized sulfides exhibited superior charge/discharge capacity (770 mAh g^-1 at a current density of 100 mA g^-1) and stable lifespan characteristics (71.2 % after 200 cycles at a current density of 500 mA g^-1). It exhibited a reversible characteristic, continuously participating in the charge-discharge process. The improved electrochemical energy storage performance and cycle stability was attributed to the small particle size, by controlling the composition of the tin-antimony sulfide. By optimizing the tin-antimony ratio during the synthesis process, it did not deviate from the solubility limit. Graphene oxide also acts to suppress volume expansion during reversible electrochemical reaction. Based on these results, tin-antimony sulfide is considered a promising anode material for a sodium ion battery used as a medium-to-large energy storage source.