• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• Bulletin of the Korean Chemical Society
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• v.16 no.11
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• pp.1099-1104
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• 1995

The catalyzed polycondensations of bis(2-hydroxyethyl) naphthalate were kinetically investigated in the presence of various antimony compounds as a catalyst. The polymerization were investigated with various ligand types of antimony oxides, various concentrations of antimony triacetate and titanium/antimony mixed catalysts. The time to reach the maximum molecular weight was remarkably changed in each case. With increasing the concentration of antimony acetate, the propagation rate was largely increased, while the degradation rate was slightly decreased. It also can be seen that the propagation and degradation rate were larger influenced by the equimolecular titanium/antimony mixed catalyst than other mixed catalysts. The temperature dependence of bis(2-hydroxyethyl) naphthalate with antimony triacetate also has been studied. From the results, it was found that the propagation rate was less influenced by a temperature change than the degradation rate.

• Bulletin of the Korean Chemical Society
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• v.6 no.3
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• pp.124-127
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• 1985

The kinetic study on the bromine-exchange reaction of antimony tribromide with ${\alpha}$-phenylethyl bromide in nitrobenzene has been carried out, using Br-82 labelled antimony tribromide. The results show that the exchange reaction is first order with respect to ${\alpha}$-phenylethyl bromide, and either second or first order with respect to antimony tribromide depending on its concentration. It is also concluded that ${\alpha}$-phenylethyl bromide exchanges bromine atom with antimony tribromide much faster than other organic bromides previously examined. Reaction mechanisms for the exchange reaction are discussed.

• Journal of the Korean institute of surface engineering
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• v.33 no.5
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• pp.387-397
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• 2000

Antimony in the galvanizing bath had greater effect on the growth of grains in the solidification of molten coating layer and on the decrease of its surface roughness than lead. Particularly 0.01 wt % antimony in the galvanizing bath showed much stronger effect than expected considering its low surface tension value. These effects were seemingly originated from the development of preferred orientation of (0002) plane parallel to steel surface. Antimony was found to be widely distributed in form of orderly arrangement throughout the coating layer unlike lead from the results of surface analyses on coating layers as received and on those as etched in chromating solution. In addition, supercooling in the 0.07 % antimony and the 0.2 % lead galvanizing bath was also measured to be in the range of$ 2~4^{\circ}C$ and $9~11^{\circ}C$ respectively, and it indicates that antimony forms fine dendrite expanded rapidly on the steel surface.

• Bulletin of the Korean Chemical Society
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• v.3 no.4
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• pp.144-148
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• 1982

The kinetic study on the bromine-exchange reaction of antimony tribromide with t-butyl bromide in nitrobenzene or 1,2,4-trichlorobenzene has been carried out, using Br-82 labelled antimony tribromide. The results show that the exchange reaction is first order with respect to t-butyl bromide and 1.5th order with respect to antimony tribromide. It is assumed that the 1.5th order indicates the coexistance of first- and second-order kinetics. Reaction mechanisms for the exchange reaction are proposed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.3
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• pp.16-21
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• 1976

Transparent eloctroaes of polycrystalline till-oxide films doped with antimony are prepared on the substrate of microscopic cover g1ass by modified spray method and from SnCl4 Solution. Their electrical and optical properties are investigated in relation to the surface temperature of the substrate glass and to antimony concentration in the starting materials. The sheet.resiststrace of the film electrodes and transmittance for incandescent light depen on tile antimony concentration and surface temperature of substrates at the time of making films. The transmittance increases with decrease of sheet resistance of the film. The optimum sheet.resistance was obtianed in the case of the antimony concentration 0.6(%) approximately , and the max. transmittance was 93(%).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.476-480
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• 2004

The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using Sb$_2$O$_3$were investigated to get a reliable process. TW(Thema Wave) and R$_{s}$(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of R$_{s}$ varied significantly to Investigate the variation of instruction accurately.

• ETRI Journal
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• v.31 no.6
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• pp.703-708
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• 2009

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.

• Bulletin of the Korean Chemical Society
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• v.3 no.2
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• pp.55-60
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• 1982

The rate of the bromine-exchange reaction of antimony tribromide with benzyl bromide in nitrobenzene or 1,2,4-trichlorobenzene has been measured, using Br-82 labelled antimony tribromide. The result of the study indicates that the exchange reaction is first order with respect to benzyl bromide, and either second or first order with respect to antimony tribromide depending on its concentrations. The second-order kinetics with respect to antimony tribromide have been observed at relatively high $[SbBr_3]$ concentrations, and the first-order kinetics at lower $[SbBr_3]$ concentrations. Reaction mechanisms are proposed for the exchange reaction.

• Korean Journal of Materials Research
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• v.32 no.12
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• pp.545-552
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• 2022

Tin-antimony sulfide nanocomposites were prepared via hydrothermal synthesis and a N₂ reduction process for use as a negative electrode in a sodium ion battery. The electrochemical energy storage performance of the battery was analyzed according to the tin-antimony composition. The optimized sulfides exhibited superior charge/discharge capacity (770 mAh g^-1 at a current density of 100 mA g^-1) and stable lifespan characteristics (71.2 % after 200 cycles at a current density of 500 mA g^-1). It exhibited a reversible characteristic, continuously participating in the charge-discharge process. The improved electrochemical energy storage performance and cycle stability was attributed to the small particle size, by controlling the composition of the tin-antimony sulfide. By optimizing the tin-antimony ratio during the synthesis process, it did not deviate from the solubility limit. Graphene oxide also acts to suppress volume expansion during reversible electrochemical reaction. Based on these results, tin-antimony sulfide is considered a promising anode material for a sodium ion battery used as a medium-to-large energy storage source.